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Megahertz Bandwidth Bulk Micromachined Optomechanical Accelerometer With Fiber Optical Interconnects.
Abstract not provided.
Megahertz Bandwidth Bulk Micromachined Optomechanical Accelerometer.
Abstract not provided.
In-Situ Femtosecond Micromachining in Laser Powder Bed Fusion Processes
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Micromachining produces optical apertures to micron dimensions
Micron dimensioned rectangular optical aperture is formed under a high-powered toolmakers microscope by laying two knife-edged blocks over the miniature knife-edged hole in the base.
Micromachining Of Silicon
Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.
Laser Micromachining In A Reactive Atmosphere
Drilling of deep holes in silicon by laser beam aided by conducting operation in reactive atmosphere. Atmosphere reacts with material ejected from hole and converts material to gas flowing away from work area. Hole cleaner and more sharply defined, and debris do not spatter surface of work.
Micromachined silicon periodic structures for millimeter- and submillimeter-wave applications
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Micromachined Electron-Tunneling Infrared Detectors
Pneumatic/thermal infrared detectors based partly on Golay-cell concept, but smaller and less fragile. Include containers filled with air or other gas trapped behind diaphragms. Infrared radiation heats sensors, causing gas to expand. Resulting deflections of diaphragms measured by displacement sensors based on principle of electron-tunneling transducers of scanning tunneling microscopes. Exceed sensitivity of all other miniature, uncooled infrared sensors presently available. Expected to include low consumption of power, broadband sensitivity, room-temperature operation, and invulnerability to ionizing radiation.
Micromachined Tunneling Accelerometer
Separation of tunneling electrodes adjusted by varying electrostatic force. Major components of tunneling transducer formed on two silicon chips by microfabrication techniques. Use of electrostatic deflection reduces sensitivity of transducer to thermal drift and simplifies design. Sensitivity suitable for applications in which larger acceleration-sensing instruments required.
Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies
Rectangular waveguide is commonly used up to high millimeter-wave frequencies. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. The development of silicon micro-machining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements of gold plated silicon waveguide show performance comparable to standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems.
Silicon Micromachined Sensor for Broadband Vibration Analysis
The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.
K-Band Si/SiGe HBT MMIC Amplifiers Using Lumped Passive Components with a Micromachined Structure
Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92 x 0.67 sq mm.
Integrated Shear Stress/Temperature Micromachined Sensors
During this project we were able to design and initiate the fabrication of an integrated Micro ElectroMechanical Systems (MEMS)-based shear stress/temperature sensor for flow control applications. A brief summary of the completed activities during this project is presented.
Optical Micromachining
Under an SBIR (Small Business Innovative Research) with Marshall Space Flight Center, Potomac Photonics, Inc., constructed and demonstrated a unique tool that fills a need in the area of diffractive and refractive micro-optics. It is an integrated computer-aided design and computer-aided micro-machining workstation that will extend the benefits of diffractive and micro-optic technology to optical designers. Applications of diffractive optics include sensors and monitoring equipment, analytical instruments, and fiber optic distribution and communication. The company has been making diffractive elements with the system as a commercial service for the last year.
An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process
This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining micro g and sub-micro g resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 microns polysilicon film with embedded 25-35 microns-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm x 1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 4-mm x 1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 micro g/sqrt(Hz) and 0.16 micro g/sqrt(Hz), respectively.
Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested
High-g accelerometers are needed in certain applications, such as in the study and analysis of high-g impact landings and projectiles. Also, these accelerometers must survive the high electromagnetic fields associated with the all-electric vehicle technology needed for aerospace applications. The choice of SiC is largely due to its excellent thermomechanical properties over conventional silicon-based accelerometers, whose material properties inhibit applicability in high electromagnetic radiation and high temperatures (>150 C) unless more complex and sometimes costly packaging schemes are adopted. This work was the outcome of a NASA Glenn Research Center summer internship program, in collaboration with Cornell University and the Munitions Directorate of the U.S. Air Force in Eglin, Florida. It aimed to provide the enabling technology infrastructure (modeling, fabrication, and validation) for the implementation of SiC accelerometers designed specifically for harsh environments.