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NASA NTRS1978

Energy distributions of sputtered copper neutrals and ions

Direct quantitative analysis of surfaces by secondary ion mass spectrometry will depend on an understanding of the yield ratio of ions to neutrals. This ratio as a function of the energy of the sputtered particles has been obtained for a clean polycrystalline copper surface sputtered by 1000-3000 eV Ar(+). The energy distributions of both neutral and ionized copper were measured with a retarding potential analyzer using potential modulation differentiation and signal averaging. The maximum for both distributions is identical and occurs near 2.5 eV. The energy distributions of neutrals is more sharply peaked than that of the ions, presumably as a consequence of more efficient nutralization of slow escaping ions by the mobile electrons of copper. The ion-neutral ratio is compared with results from various ionization models.

Lundquist, T. R.↗

NASA NTRS1979

Open-circuit voltage improvements in low-resistivity solar cells

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Godlewski, M. P.↗

NASA NTRS1979

Nuclear Science Symposium, 25th, and Symposium on Nuclear Power Systems, 10th, Washington, D.C., October 18-20, 1978, Proceedings

Detectors of various types are discussed, taking into account drift chambers, calorimetry, multiwire proportional chambers, signal processing, the use of semiconductors, and photo/optical applications. Circuits are considered along with instrumentation for space, nuclear medicine instrumentation, data acquisition and systems, environmental instrumentation, reactor instrumentation, and nuclear power systems. Attention is given to a new approach to high accuracy gaseous detectors, the current status of electron mobility and free-ion yield in high mobility liquids, a digital drift chamber digitizer system, the stability of oxides in high purity germanium, the quadrant photomultiplier, and the theory of imaging with a very limited number of projections.

Source record↗

NASA NTRS1980

Open-circuit voltage improvements in low resistivity solar cells

Improvements in the open circuit voltage of 0.1 ohm-cm silicon solar cells were achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behavior of the electron mobility in the cell base limits attainment of higher voltages.

Godlewski, M. P.↗

NASA NTRS1980

Open-circuit voltage improvements in low resistivity solar cells

Improvements in the open-circuit voltage of 0.1 ohm-cm silicon solar cells have been achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behaviors of the electron mobility in the cell base limits attainment of higher voltages.

Godlewski, M. P.↗

NASA NTRS1981

Electron penetration of spacecraft thermal insulation

The external thermal blanket with 13 mils of polyethylene which has the known range and stopping power as a function of electron energy is investiated. The most recent omnidirectional peak Jovian electron flux at 5 Jupiter radii is applied, the electron current penetrating the thermal blanket is calculated and allowed to impinge on a typical 20 mil polyethylene insulator surrounding a wire. The radiation dose rate to the insulator is then calculated and the electrical conductivity found. The results demonstrate that the increased electronic mobility is sufficient to keep the maximum induced electric field two orders of magnitude below the critical breakdown strength.

Powers, W. L.↗

NASA NTRS1981

Impact of VLSI/VHSIC on satellite on-board signal processing

Forecasted improvements in IC fabrication techniques, such as the use of X-ray lithography, are expected to yield submicron circuit feature sizes within the decade of the 1980s. As dimensions decrease, reliability, cost, speed, power consumption and density improvements will be realized which have a significant impact on the capabilities of onboard spacecraft signal processing functions. This will in turn result in increases of the intelligence that may be deployed on spaceborne remote sensing platforms. Among programs oriented toward such goals are the silicon-based Very High Speed Integrated Circuit (VHSIC) researches sponsored by the U.S. Department of Defense, and efforts toward the development of GaAs devices which will compete with silicon VLSI technology for future applications. GaAs has an electron mobility which is five to six times that of silicon, and promises commensurate computation speed increases under low field conditions.

Aanstoos, J. V.↗

NASA NTRS1983

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Nishino, S.↗

NASA NTRS1982

Characterisation of semi-insulating GaAs

Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

Walukiewicz, W.↗

NASA NTRS1985

Thermally-Rechargeable Electrochemical Cell

Proposed liquid-sodium/sulfur electrochemical cell recharged by heat, rather than electric generator. Concept suitable for energy storage for utilites, mobile electronic equipment, and solar thermoelectric power systems. Sodium ions driven across membrane with aid of temperature differential.

Richter, R.↗

NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗

NASA NTRS1985

Investigations of radiation-induced and carrier-enhanced conductivity

A steady-state carrier computer code, PECK (Parker Enhanced Carrier Kinetics), that predicts the radiation-induced conductivity (RIC) produced in a dielectric by an electron beam was developed. The model, which assumes instantly-trapped holes, was then applied to experimental measurements on thin Kapton samples penetrated by an electron beam. Measurements at high bias were matched in the model by an appropriate choice for the trap-modulated electron mobility. A fractional split between front and rear currents measured at zone bias is explained on the basis of beam-scattering. The effects of carrier-enhanced conductivity (CEC) on data obtained for thick, free-surface Kapton samples is described by using an analytical model that incorporates field injection of carriers from the RIC region. The computer code, LWPCHARGE, modified for carrier transport, is also used to predict partial penetration effects associated with CEC in the unirradiated region. Experimental currents and surface voltages, when incorporated in the appropriate models, provide a value for the trap modulated mobility that is in essential agreement with the RIC results.

Meulenberg, A., Jr.↗

NASA NTRS1985

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗

NASA NTRS1984

Growth of InSb and InAs(1-x)Sb(x) by OM-CVD

Organometallic chemical vapor deposition (OM-CVD) growth of InSb and InAs(1-x)Sb(x) has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine (AsH3) on (100) GaAs, (100) InSb, and (111)-B InSb substrates. InSb with excellent morphology was achieved on both (100) InSb and (111)-B InSb substrates. The measured electron mobility at 300 K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 sq cm/V-s at a carrier concentration of ND-NA = 2.0 x 10 to the 16th per cu cm. Carrier concentration of ND-NA = 1.2 x 10 to the 15th per cu cm has been measured at 77 K. InAs(1-x)Sb(x) (x = 0.07-0.75) with mirror-like surfaces have been grown on (100) InSb and InAs substrates. This composition range of x between 0.55 and 0.75 (Eg = 0.1 eV) has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and InSb substrate orientations are also discussed.

Chiang, P. K.↗

NASA NTRS1986

Analysis of optically controlled microwave/millimeter wave device structures

The light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor bandgap for GaAs MESFET, InP MESFET, Al0.3Ga0.7As/GaAs high electron mobility transistor (HEMT) and GaAs permeable base transistor (PBT) were analytically obtained. The GaAs PBT and GaAs MESFET have much higher sensitivity than InP MESFET. The Al0.3Ga0.7As/GaAs HEMT is observed to have the highest sensitivity. Variation in device parasitics due to optical illumination and its effect on the cutoff frequencies f sub T and f sub max are also investigated.

Simons, R. N.↗

NASA NTRS1985

HEMT 60 GHz amplifier

A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.

Berenz, J.↗

NASA NTRS1986

Analysis of optically controlled microwave/millimeter-wave device structures

Simons, Rainee N.↗

NASA NTRS1987

Temperature dependence (4K to 300K) of the electrical resistivity of methane grown carbon fibers

Experimental measurements of the electrical resistivity vs temperature of methane vapor grown carbon fibers are presented. The fibers are heat treated from 1100 C (as-grown) to 3000 C. Data are fit to a standard two band model, which yields values for boundary scattering limited electron mobility, in-plane mean free path, energy band overlap, and total carrier density. The data are also fit to an ellipsoidal band model, where data fits yield effective masses, band overlap, Fermi velocity, phonon contributions to scattering, and ionized impurity scattering rates.

Woollam, John A.↗