NASA NTRS · 19860032193
HEMT 60 GHz amplifier
Abstract
A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.
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Berenz, J., Nakano, K., Hsu, T.-I., Goel, J.. 1985-10-24. HEMT 60 GHz amplifier. https://ntrs.nasa.gov/citations/19860032193
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