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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Elastomeric reflection suppressor

Various embodiments of the present technology generally relate to reflection suppressors. More specifically, some embodiments use elastomeric materials doped with optical absorbers for temporary suppression of Fresnel reflections for multiple substrates spanning wide spectral and angular bandwidth. The refractive index of the elastomer can be tuned to match a substrate and thereby minimize reflection. Some embodiments can use the addition of different absorptive dopants to allow for either broadband or wavelength-selective reflection suppression. As performance is limited only by index mismatch, both spectral and angular performance significantly exceed that of anti-reflection coatings. After use, these light traps may be removed and reused without damaging the substrate. These films have uses in spectroscopic ellipsometry, holography, and lithography.

Miller, David↗
DOE OSTI2022

Enabling high energy lithium metal batteries via single-crystal Ni-rich cathode material co-doping strategy

High-capacity Ni-rich layered oxides are promising cathode materials for secondary lithium-based battery systems. However, their structural instability detrimentally affects the battery performance during cell cycling. Here, we report an Al/Zr co-doped single-crystalline LiNi<:sub>0.88 Co 0.09 Mn 0.03 O 2 (SNCM) cathode material to circumvent the instability issue. We found that soluble Al ions are adequately incorporated in the SNCM lattice while the less soluble Zr ions are prone to aggregate in the outer SNCM surface layer. The synergistic effect of Al/Zr co-doping in SNCM lattice improve the Li-ion mobility, relief the internal strain, and suppress the Li/Ni cation mixing upon cycling at high cut-off voltage. These features improve the cathode rate capability and structural stabilization during prolonged cell cycling. In particular, the Zr-rich surface enables the formation of stable cathode-electrolyte interphase, which prevent SNCM from unwanted reactions with the non-aqueous fluorinated liquid electrolyte solution and avoid Ni dissolution. To prove the practical application of the Al/Zr co-doped SNCM, we assembled a 10.8 Ah pouch cell (using a 100 μm thick Li metal anode) capable of delivering initial specific energy of 504.5 Wh kg- 1 at 0.1 °C and 25 °C.

25 ENERGY STORAGE↗
DOE OSTI2023

Dopant for improving casting and electroplating performance

Systems, methods, components, and parts are provided for improving casting and electroplating performance of a plated cast part by doping a semiconductor material with an electrically active dopant before mixing the semiconductor material into a base material. The doped semiconductor material improves the castability of the base material and has an improved electrical conductivity which is closer to that of the base material such that a consistency of a subsequent plating on the part is improved.

Young, Barbara Diane↗
DOE OSTI2021

Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x1017 cm-3–1x1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Doped gate dielectric materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗
DOE OSTI2022

Doped gate dielectrics materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗
DOE OSTI2020

Aspects of the normal state resistivity of cuprate superconductors

Planar normal state resistivity data taken from three families of cuprate superconductors are compared here with theoretical calculations from the recent extremely correlated Fermi liquid theory (ECFL). The two hole doped cuprate materials LSCO and BSLCO and the electron doped material LCCO have yielded rich data sets at several densities δ and temperatures T, thereby enabling a systematic comparison with theory. The recent ECFL resistivity calculations for the highly correlated t-t'-J model by us give the resistivity for a wide set of model parameters. After using X-ray diffraction and angle resolved photoemission data to fix parameters appearing in the theoretical resistivity, only one parameter, the magnitude of the hopping t, remains undetermined. For each data set, the slope of the experimental resistivity at a single temperature-density point is sufficient to determine t, and hence the resistivity on absolute scale at all remaining densities and temperatures. This procedure is demonstrated to give a fair account of the entire data.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Heavy boron doping in superconducting carbon materials

Here we examine physical properties of heavily boron-doped sp 3 -hybridized carbon allotropes: cubic diamond, hexagonal diamond, and body centered tetragonal C 4 . The structural similarity between cubic diamond and hexagonal diamond leads to similar responses to substitutional boron doping. On the other hand, body centered tetragonal C 4 exhibits distinct structural and electronic properties because of its characteristic structure. Our study also shows that the superconducting transition temperatures up to 60 K are possible in heavily doped carbon materials despite their various atomistic structures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Developing a Low Cost, High Volume and Scalable Manufacturing Technology for Undoped and Heavily P-Type Doped CdTe Feedstock Materials (Final Report)

The goal of this project was to establish a cost-effective and scalable production approach of feedstock (CdTe and Cd-Se-Te) for the solar industry, with the material properties necessary to improve performance and reduce costs. The primary focus was to develop a CdTe synthesis and growth process that pushed the p-type doping of CdTe to previously unattainable levels, while creating a path to scalable production. In our approach, the first step was bulk CdTe growth doped with Group V dopants (P, As, and Sb) using the Modified Vertical Bridgman (MVB) and high Pressure Bridgman (HPB) techniques, and the second step was examination of films deposited by Close-Spaced Sublimation (CSS) and Vapor Transport Deposition (VTD) using this specialized feedstock.

14 SOLAR ENERGY↗
DOE OSTI2021

Ca2+-Doped CeBr3 Scintillating Material

2021 ANS Annual Meeting Conference Papers; June 13-16, 2021 | Omni / Convention Center | Providence, RI; https://epsr.ans.org/meeting/?m=310

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Furthermore, Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards the higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin n-region is formed between Ta-adsorbed surface and bulk.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mesoporous Textured Fe-N-C Electrocatalysts as Highly Efficient Cathodes for Proton Exchange Membrane Fuel Cells

A new platinum group metal (PGM)-free proton exchange membrane fuel cell (PEMFC) cathode catalyst materials, synthesized using the VariPore™ method by Pajarito Powder, LLC, are characterized for their structure and activity. The physico-chemical analysis of the iron-nitrogen-carbon (Fe-N-C) electrocatalysts show mesoporous carbon material effectively doped with iron and nitrogen. The materials have an average pore size of 7-8 nm and high specific surface area. The Fe-N-C catalysts exhibit good oxygen reduction reaction (ORR) activity in 0.5 M H2SO4 electrolyte with high half-wave potential and sustainable electrochemical stability over 10,000 repeated potential cycles with insignificant losses in their activities. As cathode catalysts in a PEMFC, the Fe-N-C materials deliver remarkably good fuel cell performance at low overpotential approaching that of the commercial Pt catalyst. The high ORR electrocatalytic activity of these Fe-N-C catalysts is credited to the synergy between nitrogen-moieties, specifically pyrrolic-N, pyridinic-N, and graphitic-N, and iron in addition to the high mesoporosity that facilitate an effective reaction path in boosting the electrocatalytic activity and stability.

DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Sulfur-Doped Carbon Support Boosts CO2RR Activity of Ag Electrocatalysts

For presentation at the 70th AVS International Symposium and Exhibition. In this work, we show that the activity of Ag electrocatalysts for electrochemical CO2 to CO conversion is improved when supported on sulfur-doped (S-doped) carbon materials. S-doped carbon support was created by treating the heavily sputtered, highly oriented pyrolytic graphite (HOPG) in H2S at elevated temperatures, as confirmed by the S 2p X-ray photoelectron spectroscopy (XPS) peak. Scanning tunneling microscopy (STM) images indicated that Ag nanoparticles supported on S-doped HOPG had similar size distributions as those supported on sulfur-free (S-free) HOPG. While both catalysts reached > 90% CO Faradaic efficiency (FECO) at E = -1.3 V vs. the reversible hydrogen electrode (RHE) in the CO2 reduction reaction (CO2RR), Ag catalysts supported on S-doped HOPG demonstrated 70% higher CO turnover frequency (TOFCO = 3.4 CO/atomAg/s) than those supported on S-free HOPG (TOFCO = 2.0 CO/atomAg/s). Preliminary calculations based on density functional theory (DFT) indicated a more favorable energetic pathway of CO2-to-CO at the C-S-Ag interface, tentatively consistent with experiments. These results hint at a new approach to design active and selective electrocatalysts for CO2 conversion.

Deng, Xingyi↗
NASA NTRS1988

Improved GaP doped SiGe thermoelectric material

Work at TECO has independently confirmed the early results obtained at JPL that high-temperature heat-treatment of SiGe/GaP alloys can significantly increase the figure of merit Z of these alloys. Several possible reasons for this improvement are given. Experiments are in progress to test these various hypothesis.

Vandersande, Jan W.↗
NASA NTRS1998

Raman and Photoluminescence Spectroscopy of Nano-crystalline PbTiO3 Sensor Materials with Different Doping Ions

Raman spectra & photoluminescence studies in PbTiO3, have been carried out, as a function of particle size, temperature, pressure and dopants. There appears respectively a distinct temperature-induced soft mode phase transition in each sample whose Curie temperature can be determined from the mean-field theory. The detailed Curie temperature shift in the modified PbTiO3 ceramics by Ba, Sr, La and Zr, has been investigated as a function of particle size. Pressure-induced phase transitions display an obvious diffuse behavior. Room temperature photoluminescence for nanocrystalline Ba(1-x)Pb(x)TiO3 have been observed. These studies favor preparations of high efficiency PbTiO3 sensors.

Katiyar, R. S.↗