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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗
NASA NTRS1980

Semiconductor step-stress testing

Report documents behavior of discrete diodes and transistors in extensive power and temperature overstress tests. Thirty nine devices were tested in groups designated: (1) power overstress, and (2) and (3) temperature overstress. Results are of interest to users of tested components and engineers in conduction of similar tests.

Meeks, H. B.↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

Johnson, R. Wayne↗
NASA NTRS1984

Crystal growth of device quality GaAs in space

The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

Gatos, H. C.↗
NASA NTRS1972

Development of an inherently digital transducer

The term digital transducer normally implies the combination of conventional analog sensors with encoders or analog-to-digital converters. Because of the objectionable characteristics of most digital transducers, a program was instituted to investigate the possibility of producing a transducer that is inherently digital, instead of a transducer that is digital in the usual sense. Such a device would have improved accuracy and reliability and would have reduced power and bulk requirements because two processes, sensing and conditioning, would be combined into one processes. A Curie-point-temperature sensor is described that represents realization of the stated goal. Also, a metal-insulator semiconductor is described that does not conform precisely to the program goals but that appears to have applications as a new and interesting transduction device.

Richard, R. R.↗
NASA NTRS1972

Water/glycol temperature control circuit failed in the automatic mode: Apollo 16

An anomaly report concerning failure of the water/glycol temperature control circuit during the Apollo 16 flight is presented. The anomaly is described and diagrams of the system are presented. The malfunction was caused by cracked semiconductor chips in the output silicon-controlled rectifier. Surface contamination in the crack allowed the device to self-gate on and remain on, resulting in a secondary failure of the feedback capacitor.

Source record↗
NASA NTRS1980

Frequency response of charge transfer in MOS inversion layers

The dynamics of charge transfer from a reservoir into an MOS inversion layer, which limits the frequency response of an MOS transistor or a charge-coupled device, is investigated. Using Berman and Kerr's model of space-charge capacitance in the semiconductor, a small-signal distributed model is developed for an MOS structure which transfers charge in an inversion channel due to a variation in the gate voltage. The dynamics of the charge transfer is characterized by a time constant which is determined by the length of the inversion channel and its mobility. Experimental data of gate capacitance vs frequency, taken from a test structure with a diffused source/drain well, are satisfactorily fitted by theoretical curves derived from the model. The channel mobility is precisely determined from the adjusted time constant. The influence of interface states on the capacitance-frequency relationship is also briefly discussed.

Lieneweg, U.↗
NASA NTRS1987

Optically controlled microwave devices and circuits: Emerging applications in space communications systems

Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution.

Bhasin, Kul B.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗
NASA NTRS2002

A comparison of imaging methods for use in an array biosensor

An array biosensor has been developed which uses an actively-cooled, charge-coupled device (CCD) imager. In an effort to save money and space, a complementary metal-oxide semiconductor (CMOS) camera and photodiode were tested as replacements for the cooled CCD imager. Different concentrations of CY5 fluorescent dye in glycerol were imaged using the three different detection systems with the same imaging optics. Signal discrimination above noise was compared for each of the three systems.

Evaluation Studies↗
NASA NTRS1999

Liquid Bipropellant Microrocket Concept Under Development

Fundamental research into the feasibility of microrockets for primary propulsion and attitude control for far-term micro/integrated spacecraft is being performed. These rockets would be fabricated using microelectrical and mechanical systems (MEMS) technology. The enabling technology is being developed at the Massachusetts Institute of Technology (MIT). The NASA/MIT program leverages a very large Army Research Office and Defense Advanced Research Projects Agency (DARPA) program for the development of microturbine technology. The microrocket motor is complete with regenerative cooling, turbopumps, and control valves etched onto the same chip. They would be fabricated in large numbers in parallel using semiconductor manufacturing techniques. The technology may lead to the development of microsatellites as fully integrated MEMS devices that could be mass produced at a fraction of the cost of current satellites.

Schneider, Steven J.↗
NASA NTRS2003

InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic 6.1 A semiconductor resonant tunneling structures.

spin filter spin pump resonant tunneling bulk inve↗
NASA NTRS2004

Theory of electrically controlled resonant tunneling spin devices

We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

spin filters↗
NASA NTRS2010

Hand-Held Devices Detect Explosives and Chemical Agents

Ion Applications Inc., of West Palm Beach, Florida, partnered with Ames Research Center through Small Business Innovation Research (SBIR) agreements to develop a miniature version ion mobility spectrometer (IMS). While NASA was interested in the instrument for detecting chemicals during exploration of distant planets, moons, and comets, the company has incorporated the technology into a commercial hand-held IMS device for use by the military and other public safety organizations. Capable of detecting and identifying molecules with part-per-billion sensitivity, the technology now provides soldiers with portable explosives and chemical warfare agent detection. The device is also being adapted for detecting drugs and is employed in industrial processes such as semiconductor manufacturing.

Source record↗
NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗