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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Brief characterization of germanium junction field effect transistors (FETs) at 77, 4, and 1.8 K

In the case of modern infrared focal planes, one of the major problems is related to the noise contribution of the cooled, impedance-matching device used as the preamplifier stage in the detector electronics system. An ideal preamp device should have the low-noise advantages of a buried-channel device and operate isothermally with the low-temperature detector array. The Ge JFET might provide this ideal device. A testing program with Ge JFETs is discussed. It is concluded that germanium JFETs offer an attractive alternative for cryogenic preamplifier designs. They operate well with high transconductance and low noise at LHe temperatures. It is believed that these devices point the way for the development of large, integrated-array, long wavelength, infrared focal planes which incorporate germanium detectors, germanium load resistors, and germanium preamplifiers within the same monolithic structure.

Arentz, R. F.↗
NASA NTRS1983

Ion implanted junctions for silicon space solar cells

This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.

Spitzer, M. B.↗
NASA NTRS1985

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

Fonash, S. J.↗
NASA NTRS1985

Waveguide PIN junction electrooptic phase modulators Theoretical analysis and design criteria

Basic design equations for waveguide PIN heterojunction electrooptic phase modulators utilizing the linear electrooptic effect are derived, and criteria for optimum operation (in terms of obtainable phase shifts) are discussed. Although the numerical examples pertain to devices fabricated of the AlGaAs system on (100) substrates, the same method can be directly applied to modulators fabricated of other materials.

Marshall, W. K.↗
NASA NTRS1986

Improved High/Low Junction Silicon Solar Cell

Air-mass-zero open-circuit voltage increased to 650 mV. Oxide-chargeinduced high/low emitter solar cell, electron accumulation layer induced by positive charge. High/low emitter suppresses dark emitter recombination current, resulting in power-conversion efficiencies significantly higher than previously achieved.

Neugroschel, A.↗
NASA NTRS1985

High-temperature thermocouple and heat flux gauge using a unique thin film-hardware hot junction

A special thin film-hardware material thermocouple (TC) and heat flux gauge concept for a reasonably high temperature and high flux flat plate heat transfer experiment was fabricated and tested to gauge temperatures of 911 K. This concept was developed for minimal disturbance of boundary layer temperature and flow over the plates and minimal disturbance of heat flux through the plates. Comparison of special heat flux gauge Stanton number output at steady-state conditions with benchmark literature data was good and agreement was within a calculated uncertainty of the measurement system. Also, good agreement of special TC and standard TC outputs was obtained and the results are encouraging. Oxidation of thin film thermoelements was a primary failure mode after about 5 of operation.

Liebert, C. H.↗
NASA NTRS1985

Basic concepts for the design of high-efficiency single-junction and multibandgap solar cells

Concepts for obtaining practical solar-cell modules with one-sun efficiencies up to 30 percent at air mass 1 are now well understood. Such high-efficiency modules utilize multibandgap structures. To achieve module efficiencies significantly above 30 percent, it is necessary to employ different concepts such as spectral compression and broad-band detection. A detailed description of concepts for the design of high-efficiency multibandgap solar cells is given.

Fan, J. C. C.↗
NASA NTRS1986

Reliability and engineering sciences area. Materials research: Single junction thin film

A test bench was designed and fabricated for the purpose of improving control of hot-spot test accuracy. Electrochemical corrosion research focused on corrosion mechanisms to which both crystalline and a-Si modules may be subjected in central station applications. A variety of cells and several designs were subjected to accelerated stress tests. Humiditiy degradation rates were determined and key electrochemical failure mechanisms were identified. Software was developed for the prediction of power loss resulting from open circuits in an array field of a-Si modules. Failure analysis was continued on the four ARCO Solar Genesis modules. The interactions of water on the silicon module was examined. An autocatalytic photooxidation model was proposed. The reliability and durability of bonding materials and electrical insulation were also studied.

Source record↗
NASA NTRS1988

Forming n/p Junctions With An Excimer Laser

Compact equipment yields high-quality solar cells. Computer controls pulses of excimer laser and movement of silcon wafer. Mirrors direct laser beam to wafer. Lenses focus beam to small spot on surface. Process suitable for silicon made by dendritic-web-growth process.

Alexander, Paul, Jr.↗
NASA NTRS1989

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Meier, D. L.↗
NASA NTRS1989

Computation of turbulent incompressible wing-body junction flow

A three-dimensional incompressible Reynolds-averaged Navier-Stokes solver is presently used in conjunction with a mixing-length turbulence model to characterize the flow around a wing that is mounted on a flat plate, in a wind tunnel, as well as the flow around a support strut within a turnaround duct. Good agreement is found between predicted and observed values of flat-plate static pressure, horseshoe vortex system size, and mean flow velocities in the case of the wing; the case of the strut in a duct is noted to exhibit many of the same overall flow features as the wing/plate.

Burke, R. W.↗
NASA NTRS1990

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution X-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

Tufts, Bruce J.↗
NASA NTRS1991

Calculating Scattering At Circular-Waveguide Junctions

Computer program calculates scattering matrices for circular waveguides including step discontinuities between collinear sections of different radii. Radius and length of each section specified arbitrarily. Examples of devices analyzed with program include waveguides with single step discontinuities, matching sections, corrugated straight sections, and corrugated horns. Sections with smooth tapers and horns with arbitrary profiles approximated by series of small steps.

Hoppe, D. J.↗
NASA NTRS1991

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

Dinetta, L. C.↗
NASA NTRS1993

Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

Weizer, V. G.↗
NASA NTRS1996

Materials For Improved Josephson-Junction Devices

Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.

Vasquez, Richard P.↗