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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

A VHSIC general purpose processor

The very high speed integrated circuit (VHSIC) program offers NASA and its contractors assured availability of military specification embedded computer components and integrated computer aided design/computer aided engineering and software development support that result in low system life costs for data management systems on the space station and the Earth Observatory Satellite. Viewgraphs given review progress in both the Department of Defense VHSIC program and the NASA VHSIC related insertion development of a general purpose processor are presented.

Benz, H. F.↗
NASA NTRS1996

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Langenbacher, Harry T.↗
NASA NTRS1996

Micromachined Ion Accelerators

Proposed ion accelerators made by micromachining techniques. Advantages include small size and weight, modularity, and compatibility with integrated circuits. Used as sources of ion beams for industrial processes. Ion accelerator of this type combined with integrated electronic control and power circuitry, plus similarly miniaturized valves and other mechanisms for regulating flow of gas used to generate ions - all micromachined on single chip. Provides flexibility for tailoring characteristics of ion sources for specific applications; for example, construct array of many such devices to obtain large ion source or position multiple devices to obtain desired ion-beam pattern in processing chamber.

Brophy, John↗
NASA NTRS2012

Single-Pole Double-Throw MMIC Switches for a Microwave Radiometer

In order to reduce the effect of gain and noise instabilities in the RF chain of a microwave radiometer, a Dicke radiometer topology is often used, as in the case of the proposed surface water and ocean topography (SWOT) radiometer instrument. For this topology, a single-pole double-throw (SPDT) microwave switch is needed, which must have low insertion loss at the radiometer channel frequencies to minimize the overall receiver noise figure. Total power radiometers are limited in accuracy due to the continuous variation in gain of the receiver. High-frequency SPDT switches were developed in the form of monolithic microwave integrated circuits (MMICs) using 75 micron indium phosphide (InP) PIN-diode technology. These switches can be easily integrated into Dicke switched radiometers that utilize microstrip technology.

Montes, Oliver↗
NASA NTRS1991

A demonstration of CMOS VLSI circuit prototyping in support of the site facility using the 1.2 micron standard cell library developed by National Security Agency

Two silicon CMOS application specific integrated circuits (ASICs), a data generation chip, and a data checker chip were designed. The conversion of the data generator circuitry into a pair of CMOS ASIC chips using the 1.2 micron standard cell library is documented. The logic design of the data checker is discussed. The functions of the control circuitry is described. An accurate estimate of timing relationships is essential to make sure that the logic design performs correctly under practical conditions. Timing and delay information are examined.

Smith, Edwyn D.↗
NASA NTRS2003

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗
NASA NTRS1979

An introduction to the BANNING design automation system for shuttle microelectronic hardware development

The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment. BANNING is user-oriented and requires no programming experience to use effectively. It provides the user a simulation capability to aid in his circuit design and it eliminates most of the manual operations involved in the layout and artwork generation of integrated circuits. An example of its operation is given and some additional background reading is provided.

Mcgrady, W. J.↗
NASA NTRS1995

Advanced packaging for Integrated Micro-Instruments

The relationship between packaging, microelectronics, and micro-electrical-mechanical systems (MEMS) is an important one, particularly when the edges of performance boundaries are pressed, as in the case of miniaturized systems. Packaging is a sort of physical backbone that enables the maximum performance of these systems to be realized, and the penalties imposed by conventional packing approaches is particularly limiting for MEMS devices. As such, advanced packaging approaches, such as multi-chip modules (MCM's) have been touted as a true means of electronic 'enablement' for a variety of application domains. Realizing an optimum system of packaging, however, in not as simple as replacing a set of single chip packages with a substrate of interconnections. Research at Phillips Laboratory has turned up a number of integrating options in the two- and three-dimensional rending of miniature systems with physical interconnection structures with intrinsically high performance. Not only do these structures motivate the redesign of integrated circuits (IC's) for lower power, but they possess interesting features that provide a framework for the direct integration of MEMS devices. Cost remains a barrier to the application of MEMS devices, even in space systems. Several innovations are suggested that will result in lower cost and more rapid cycle time. First, the novelty of a 'constant floor plan' MCM which encapsulates a variety of commonly used components into a stockable, easily customized assembly is discussed. Next, the use of low-cost substrates is examined. The anticipated advent of ultra-high density interconnect (UHDI) is suggested as the limit argument of advanced packaging. Finally, the concept of a heterogeneous 3-D MCM system is outlined that allows for the combination of different compatible packaging approaches into a uniformly dense structure that could also include MEMS-based sensors.

Lyke, James L.↗
NASA NTRS2018

A Low SWaP-C prototype Ka-band Frequency Synthesizer for Atomic Clocks

We present a low size, weight, power and cost (SWaP-C) prototype circuit of a Ka-band frequency synthesizer. It takes advantage of a phase-locked loop single integrated circuit (IC) and harmonic generation with high speed CMOS gates. We use a direct digital synthesizer (DDS) IC to tune the final output with microHertz resolution. An ultra-low-power micro controller that could serve as the clock controller is used to control the PLL and the DDS. All components are commercial off the shelf (COTS) with acceptable industrial support. The total power consumption is about 1.6 Watt with -45 dBm useful output at 40.507347996 GHz. The short-term instability introduced by the prototype is 7.3E-14 at 1s. The prototyped subsystem uses COTS demonstration boards for the sake of agile prototyping. There is still significant margin for improvement of the size and weight.

Tjoelker, Robert L.↗
NASA NTRS1986

Pulse-Width Proportional-Controller Circuit

Proportional controller for motor speed provides full 0- to 100-percent linear control of durations of motor-driving pulses. Controller uses commercially available LM3900 integrated circuit, which requires only single supply voltage of 4 to 30 V. Control voltage provided by adjustable potentiometer or by external source of feedback information such as motor-speed sensing circuit.

Clukey, R. W.↗
DOE OSTI2020

Neuromorphic spintronics

Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the magnetic and electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits, and magnetic tunnel junctions are of particular interest as neuromorphic computing elements because they are compatible with standard integrated circuits and can support multiple functionalities. Here, we review the development of spintronic devices for neuromorphic computing. We examine how magnetic tunnel junctions can serve as synapses and neurons, and how magnetic textures, such as domain walls and skyrmions, can function as neurons. We also explore spintronics-based implementations of neuromorphic computing tasks, such as pattern recognition in an associative memory, and discuss the challenges that exist in scaling up these systems.

42 ENGINEERING↗
NASA NTRS1988

Small, Optically-Driven Power Source

Power transmitted along fiber-optic cables. Transmitted as infrared light along fiber-optic cable, converted to electricity to supply small electronic circuit. Power source and circuit remains electrically isolated from each other for safety or reduces electromagnetic interference. Array of diodes made by standard integrated-circuit techniques and packaged for mounting at end of fiber-optic cable.

Cockrum, Richard H.↗
NASA NTRS1983

Solid State Circuits for Cryogenic Operation

Tests confirm operation of five commercial semiconductor devices at cryogenic temperatures. The five devices - one tunnel diode, one field-effect transistor, and three CMOS integrated circuits - all perform well in circuits immersed in liquid-helium bath. For some tests, bath temperature was reduced to 1,25K by pumping.

Petrac, D.↗
NASA NTRS1966

Miniature bioelectric device accurately measures and telemeters temperature

Miniature micropower solid-state circuit measures and telemeters the body temperature of laboratory animals over periods up to two years. The circuit employs a thermistor as a temperature sensing element and an fm transmitter. It is constructed from conventional discrete components or integrated circuits.

Fryer, T. B.↗
NASA NTRS1993

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗
NASA NTRS1993

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗
NASA NTRS1997

Good Trellises for IC Implementation of Viterbi Decoders for Linear Block Codes

This paper investigates trellis structures of linear block codes for the integrated circuit (IC) implementation of Viterbi decoders capable of achieving high decoding speed while satisfying a constraint on the structural complexity of the trellis in terms of the maximum number of states at any particular depth. Only uniform sectionalizations of the code trellis diagram are considered. An upper-bound on the number of parallel and structurally identical (or isomorphic) subtrellises in a proper trellis for a code without exceeding the maximum state complexity of the minimal trellis of the code is first derived. Parallel structures of trellises with various section lengths for binary BCH and Reed-Muller (RM) codes of lengths 32 and 64 are analyzed. Next, the complexity of IC implementation of a Viterbi decoder based on an L-section trellis diagram for a code is investigated. A structural property of a Viterbi decoder called add-compare-select (ACS)-connectivity which is related to state connectivity is introduced. This parameter affects the complexity of wire-routing (interconnections within the IC). The effect of five parameters namely: (1) effective computational complexity; (2) complexity of the ACS-circuit; (3) traceback complexity; (4) ACS-connectivity; and (5) branch complexity of a trellis diagram on the very large scale integration (VISI) complexity of a Viterbi decoder is investigated. It is shown that an IC implementation of a Viterbi decoder based on a nonminimal trellis requires less area and is capable of operation at higher speed than one based on the minimal trellis when the commonly used ACS-array architecture is considered.

Moorthy, Hari T.↗
NASA NTRS2012

Analog bus driver and multiplexer

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Pain, Bedabrata↗