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DOE OSTI2025

Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons

III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron detector material because the isotope B-10 is among a few elements that have an unusually large interaction cross section with thermal neutrons. A record high thermal neutron detection efficiency of 60% has been achieved by B-10 enriched h-BN detectors of 100 μm in thickness in our group. However, direct detection of fast neutrons with energies above 1 MeV is highly challenging due to the extremely low interaction cross section of fast neutrons with matter. We report the successful attainment of 0.4 mm thick freestanding h-BN 4"-diameter wafers, which enabled the demonstration of h-BN fast neutron detectors capable of delivering a detection efficiency of 2.2% in response to a bare AmBe neutron source. Furthermore, it was shown that the energy information of incoming fast neutrons is retained in the neutron pulse-height spectra. A comparison of characteristics between h-BN fast and thermal neutron detectors is summarized. Neutron detectors are vital diagnostic instruments for nuclear and fusion reactor power and safety monitoring, oil field exploration, neutron imaging and therapy, as well as for plasma and material science research. With the outstanding attributes resulting from its ultrawide bandgap (UWBG), including the ability to operate at extreme conditions of high power, voltage, and temperature, the availability of h-BN UWBG semiconductor detectors with the capability of simultaneously detecting thermal and fast neutrons with high efficiencies is expected to open unprecedented applications that are not possible to attain by any other types of neutron detectors.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Dark Energy Survey year 6 results: Magnification modeling and its impact on galaxy clustering and galaxy-galaxy lensing cosmology

Gravitational lensing magnification alters the observed spatial distribution of galaxies and must be accounted for to prevent biases in cosmological probes of the large-scale structure. We investigate its effects on the Dark Energy Survey Year 6 galaxy clustering and galaxy-galaxy lensing analyses using the fiducial lens (position tracer) sample M ag L im++. Magnification bias is parameterized by a coefficient that describes the response of the number of selected objects per unlensed area element to a change in the lensing convergence. We quantify this coefficient using the BALROG synthetic source injection catalog to account for the complexity of the selection function, and compare these results with simplified estimates. The resulting values of the magnification coefficients for each redshift bin are [3.16 ± 0.08, 2.76 ± 0.21, 4.09 ± 0.15, 4.42 ± 0.16, 4.90 ± 0.29, 4.83 ± 0.25]. Relative to Year 3, this analysis provides more precise and accurate magnification bias estimates through a larger BALROG area and reweighting to better match the data properties. Here, the cosmological results are robust when tested against various magnification parameter prior choices and also when adding cross-clustering between lens redshift bins. Neglecting magnification, however, introduces significant systematic shifts: relative to the fiducial analysis with Gaussian priors centered on the BALROG -derived estimates, we observe shifts of 1.37σ in S 8 and -0.84σ in Ω m (with cosmic shear included: -0.61σ in S 8 and -0.71σ in Ω m ), in agreement with findings from simulated data, demonstrating that magnification must be modeled to avoid biases. Freeing the magnification bias in lens bin 2 leads to unphysical negative values, further justifying its exclusion from the fiducial Year 6 analysis.

Cosmological parameters↗