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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Pressure-induced 𝐵⁢1 to 𝐵⁢2 phase transition in CeN studied by 𝑎⁢𝑏 𝑖⁢𝑛⁢𝑖⁢𝑡⁢𝑖⁢𝑜 correlation matrix renormalization theory calculations

We apply correlation matrix renormalization theory (CMRT) to cerium nitride (CeN) under pressure. For 𝐵⁢1 (NaCl-type) phase, CMRT gives an equation of state consistent with ambient pressure experiments. It produces electronic density-of-state (DOS) characterized by a sharp 4⁢𝑓 quasiparticle resonance peak pinned at the Fermi level and two subbands formed by strong hybridization between the localized Ce-4⁢𝑓 electrons and the itinerant Ce-5⁢𝑑 and N-2⁢𝑝 electrons below the Fermi level, consistent with x-ray photoemission spectroscopy experiments. Upon compression, CMRT predicts a first-order 𝐵⁢1 → 𝐵⁢2 (CsCl-type) transition with ∼11% volume collapse in agreement with experiments. Across the transition, the 4⁢𝑓 spectrum broadens, the 4⁢𝑓 orbital occupancy increases, and the hybridization with conduction states enhances, signaling a crossover from partially localized to more itinerant 4⁢𝑓 behavior. Furthermore, these features are in excellent agreement with experimental observations, demonstrating that CMRT provides a parameter-free description and prediction of correlation-driven structural and electronic transitions in rare-earth compounds.

Ab initio calculations↗
DOE OSTI2025

Decision-tree structures utilizing a phase-transition material

The rich internal physics due to competing electronic phases present in phase-transition materials such as VO2 offer the potential for compact building block design for emerging non-von Neumann computing technologies. Here, based on the relaxation dynamics of an insulator-metal phase transition, we demonstrate experimentally a decision-tree classifier embedded within a single volatile resistive switching device. The tree is constructed by the combination of the voltage pulse and relaxation time and can adapt to different tasks. We use machine learning to analyze the relaxation process, enabling a predictive voltage-relaxation time phase diagram for the electrical resistance state. Classification of the etiology of the chronic cough is presented as a proof-of-principle use case. Further, our approach can be generalized to broader classes of solid-state and solid-liquid interfacial systems that demonstrate a variety of phase relaxations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Extending Interfaces in 3D to Achieve Superior Nanoscale Strength in Ti/Nb Nanolaminates

Tuning the atomic-level structure of nanolaminates enables high strength, increased deformability, and the ability to absorb and mitigate damage due to varied crystalline defects, including dislocations. Here, we present the enhanced strength of Ti/Nb nanolaminates containing thick 3D interfaces (3DIs), relative to their chemically abrupt 2D counterparts. We examine the effects of crystallographic alignment and compositional gradients on mechanical behavior via experiments and phase-field-dislocation dynamics (PFDD) modeling. Mechanical testing reveals that nanolaminates containing thicker 3DIs demonstrate a 28% hardness enhancement compared with sharp-interface nanolaminates. PFDD modeling shows that the critical resolved shear stress (CRSS) increases with the 3DI thickness. Gradual compositional transitions in 3DIs were confirmed via scanning transmission electron microscopy and high-resolution transmission electron microscopy, showing sharp crystallographic transitions and a heightened interface topography. The findings establish a positive function between the 3DI thickness and mechanical robustness for hexagonal-closest-packed-containing composites, emphasizing the role of defect–interface interactions in tailoring the mechanical performance and providing a foundation for future interfacial engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Coupled electronic and magnetic excitations in the cuprates and their role in the superconducting transition

The formation of Cooper pairs, a bound state of two electrons of opposite spin and momenta by exchange of a phonon, is a defining feature of conventional superconductivity. In the cuprate high temperature superconductors, even though the superconducting state also consists of Cooper pairs, the pairing mechanism remains intensely debated. Here, we investigate superconducting pairing in the Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) cuprate by employing spectral functions obtained from angle-resolved photoemission as input to the Bethe-Salpeter equation. Assuming Cooper pairing is driven by spin fluctuations, we construct the spin-fluctuation-mediated pairing interaction and use it to compute the eigenfunctions and eigenvalues of the Bethe-Salpeter equation for multiple Bi2212 samples. The leading d-wave eigenvalue increases as the temperature is decreased toward $T_c$, reaching a value of approximately 1 at the $T_c$ corresponding to each doping value. This suggests that spin fluctuations can approximately account for $T_c$ and mediate pairing in the cuprate superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1985

Theoretical research program to study transition metal trimers and embedded clusters

Small transition metal clusters at a high level of approximation i.e. including all the valence electrons in the calculation and also including extensive electron correlation were studied. Perhaps the most useful end result of these studies is the qualitative information about the electronic structure of these small metal clusters, including the nature of the bonding. The electronic structure studies of the small clusters are directly applicable to problems in catalysis. From comparison of dimers, trimers and possibly higher clusters, it is possible to extrapolate the information obtained to provide insights into the electronic structure of bulk transition metals and their interaction with other atoms and molecules at both surface and interior locations.

Walch, S. P.↗
DOE OSTI2025

Large Kohn Anomaly and Phonon Collapse Induced by Charge Density Wave in UPt 2⁢ Si 2

Using high-energy-resolution inelastic x-ray scattering, we observe anomalous softening and damping of the transverse acoustic phonon in UPt 2 ⁢Si 2 as the system is cooled toward the charge density wave (CDW) transition temperature 𝑇 CDW . The phonon exhibits a marked Kohn-type anomaly around the CDW wave vector 𝑄 CDW and becomes overdamped within a finite momentum range already well above 𝑇 CDW . The dispersion anomaly is consistent with potential Fermi surface nesting, which together with the extended phonon collapse indicates strong electron-phonon coupling. The transition temperature estimated from the phonon softening is markedly lower than 𝑇 CDW , consistent with a primarily electronic instability rather than a phonon-driven transition. In conclusion, our results establish UPt 2⁢ Si 2 as a prime example of a strongly correlated electron CDW system with exceptionally strong electron-phonon coupling driving phonon softening and collapse.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p‐Type Doping Method

Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here, in this study, we report the electrophilic trifluoromethylation of 2D WSe2 and MoS 2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe 2 . This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

High-temperature concomitant metal-insulator and spin-reorientation transitions in a compressed nodal-line ferrimagnet Mn 3 Si 2 Te 6

Symmetry-protected band degeneracy, coupled with a magnetic order, is the key to realizing novel magnetoelectric phenomena in topological magnets. While the spin-polarized nodal states have been identified to introduce extremely-sensitive electronic responses to the magnetic states, their possible role in determining magnetic ground states has remained elusive. Here, taking external pressure as a control knob, we show that a metal-insulator transition, a spin-reorientation transition, and a structural modification occur concomitantly when the nodal-line state crosses the Fermi level in a ferrimagnetic semiconductor Mn 3 Si 2 Te 6 . These unique pressure-driven magnetic and electronic transitions, associated with the dome-shaped Tc variation up to nearly room temperature, originate from the interplay between the spin-orbit coupling of the nodal-line state and magnetic frustration of localized spins. Our findings highlight that the nodal-line states, isolated from other trivial states, can facilitate strongly tunable magnetic properties in topological magnets.

36 MATERIALS SCIENCE↗
NASA NTRS1995

The transition regions of Capella

We have used the Goddard High Resolution Spectrometer (GHRS) to observe the spectoscopic binary system Capella (G8 III + G1 III). Exposures with the G140L, G140M, G160M, G200M, and echelle gratings provide emission line profiles with unprecedented signal-to-noise and spectral resolving power (lambda/Delta-lambda) up to 92,000. Multi-Gaussin fits to the line profiles show that the hotter star contributes 60%-70% of the total flux in the chromospheric O I and Mg II resonance lines, but about 90% of the flux in the Si III, Si IV, and C IV lines formed in the transition region at T less than or = 10(exp 5) K. We find clear evidence that the emission lines from the hotter star are systemtically redshifted relative to the photosphere with Doppler shifts of 5 +/- 1 km/s for the +9 +/- 3 km/s in the chromospheric Mg II and O I lines, respectively, increasing to +24 +/- 5 km/s for the transition region Si IV 1393.8A line. The multi-Gaussian fits to permitted transition region lines of SI III, Si IV, C IV, and N V indicate the presence of three components: moderately broad lines formed in the transition region of the hotter star (component H), narrow lines formed in the transition region of the cooler star (component C), and very broad lines that we think are formed in microflares on the hotter star (component B). The He II 1640.4 A feature has an broad profile, which indicates that it is formed by collisional excitation primarily from the hotter star, and a weak narrow component that we interpret as due to radiative recombination on the cooler star. We observed spin-forbidden emission lines of C III), O III), Si III), O IV), O V), and S IV) that are sensitive to electron density. Fainter members of the O IV) multiplet and all of the S IV) lines have never before been seen in any star than the Sun. We determine electron densities in the transition regions of the Capella stars using lines ratios of O IV) lines and emission measure analysis. The emission measures are self-consistent only when the fluxes from each emitting component are considered separately. In particular, the transition region abundance distributions appear to be different on the two stars, and the spin-forbidden lines were not detected in the B component. The emission measures for component H (the G1 star) are consistent with a constant electron pressure (or hydrostatic equilibrium) transition region with P(sub e) = 10(exp 15 + 0.1)/cu cm K and possibly solar 'coronal' abundances.

Linsky, Jeffrey L.↗
DOE OSTI2023

Quantized resistance revealed at the criticality of the quantum anomalous Hall phase transitions

In multilayered magnetic topological insulator structures, magnetization reversal processes can drive topological phase transitions between quantum anomalous Hall, axion insulator, and normal insulator states. Here we report an examination of the critical behavior of two such transitions: the quantum anomalous Hall to normal insulator (QAH-NI), and quantum anomalous Hall to axion insulator (QAH-AXI) transitions. By introducing a new analysis protocol wherein temperature dependent variations in the magnetic coercivity are accounted for, the critical behavior of the QAH-NI and QAH-AXI transitions are evaluated over a wide range of temperature and magnetic field. Despite the uniqueness of these different transitions, quantized longitudinal resistance and Hall conductance are observed at criticality in both cases. Furthermore, critical exponents were extracted for QAH-AXI transitions occurring at magnetization reversals of two different magnetic layers. The observation of consistent critical exponents and resistances in each case, independent of the magnetic layer details, demonstrates critical behaviors in quantum anomalous Hall transitions to be of electronic rather than magnetic origin. Our finding offers a new avenue for studies of phase transition and criticality in QAH insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1985

Differential electron scattering cross sections for the 3 (2)S to 3 (2)P0 h, k transitions in Mg II - Comparison of experiment and theory

Angular differential electron scattering cross sections are reported for the unresolved inelastic 3s (2)S to 3p (2)P0 h, k transitions in Mg II for the first time. Relative differential cross sections have been measured at 35 eV and 50 eV in the angular range of Theta between 6 and 17 deg using the newly developed electron energy loss technique in a crossed electron-ion beam geometry. Theoretical values have been calculated in a five-state close-coupling approximation in which 3s, 3p, 3d, 4s, and 4p states were included, and to which measurements were normalized at Theta = 12 deg.

Williams, I. D.↗
DOE OSTI2021

Anomalous thermoelectricity at the two-dimensional structural transition of SnSe monolayers

The thermoelectric figure of merit ZT comprises electronic and vibrational contributions that drastically change across phase transitions, and the most common theoretical ab initio approach to thermoelectricity fails to describe the evolution of ZT across finite-temperature structural transitions in its entirety. Furthermore, while the thermoelectric behavior of bulk SnSe has been extensively studied, SnSe monolayers have been experimentally realized only recently, and the existent prediction of thermoelectricity on this two-dimensional material is unreliable because it misses its structural transition altogether. SnSe monolayers (and similar GeS, GeSe, GeTe, SnS, and SnTe monolayers) experience a temperature-induced two-dimensional Pnm2 1 → P4/nmm structural transition precipitated by the softening of vibrational modes, and we describe their thermoelectric properties across the phase transition, using molecular dynamics data to inform both electronic and vibrational coefficients directly and within the same footing. Similar to recent experimental observations pointing to an overestimated ZT past the transition temperature in bulk SnSe, we find a smaller ZT on SnSe monolayers when compared to its value predicted by the standard paradigm, due to the dramatic changes in the electrical conductivity and lattice thermal conductivity as the structural transition ensues. Here, the process described here lends a strong focus to both the vibrational and electronic evolutions throughout the structural transition, and it applies to thermoelectric materials undergoing thermally driven solid-to-solid structural phase transitions in one, two, and three dimensions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Deciphering Charge Transfer Processes in Transition Metal Complexes from the Perspective of Ultrafast Electronic and Nuclear Motions

Chemical transformations in charge transfer states result from the interplay between electronic dynamics and nuclear reorganization along excited-state trajectories. Here, in this study, we investigate the ultrafast structural dynamics following photoinduced electron transfer from the metal-metal-to-ligand charge transfer state of an electron donor, a Pt dimer complex, to a covalently linked electron acceptor group using ultrafast time-resolved wide-angle X-ray scattering and optical transient absorption spectroscopy methods to disentangle the interdependence of the excited-state electronic and nuclear dynamics. Following photoexcitation, Pt-Pt bond formation and contraction takes up to 1 ps, much slower than the corresponding process in analogous complexes without electron acceptor groups. Because the Pt-Pt distance change is slow with respect to excited-state electron transfer, it can affect the rate of electron transfer. These results have potential impacts on controlling electron transfer rates via structural alterations to the electron donor group, tuning the charge transfer driving force.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1983

Electron collisional rate coefficients for low-level transitions in hydrogen

There exists presently no general agreement concerning the collisional excitation rates of atomic hydrogen. The present investigation is concerned with the results reported by various investigators, taking into account the semiempirical rates of Johnson (1972), a study conducted by Aggarwal (1983), empirically based rates of Crandall et al. (1974), and the rates tabulated in Osterbrock (1974), based on the close-coupling calculations of Burke et al. (1967). It is found that there is a major conflict between the 'best' theoretical and Johnson values on the one hand, and the empirical data on the other. A study of the data shows that the Johnson value for the 1 to 2 rate agrees well with other theoretical calculations, and within 25 percent of empirical measurements, but that the Johnson 1 to 3 rate is 40-75 percent of the 'best' theoretical calculations.

Drake, S. A.↗