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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Mechanically activated and deactivated ion transport across nanopores with heterogeneous surface charge distributions

To mimic the intricate and adaptive functionalities of biological ion channels, electrohydrodynamic ion transport has been studied extensively, albeit mostly, across uniformly charged nanochannels. Here, we analyze the ion transport under coupled electric field and pressure across heterogeneously charged nanopores with oppositely charged sections on their lateral surface. We only consider such pores with symmetric hourglass-like and cylindrical shapes to focus on the effects of the non-uniform surface charge distribution. Finite-element simulations of a continuum model demonstrate that a pressure applied in either direction of the pore-axis equally suppresses or amplifies the ionic conductance, depending on the electric field polarity, by distorting the quasi-static distribution of ions in the pore. The resulting anomalous mechanical deactivation and activation of ionic current under opposite voltage biases exhibit the functional modularity of our setup, while their intensities are highly tunable, substantially greater than those of analogous behaviors in other nanochannels, and fundamentally correlated to ionic current rectification (ICR) in our pores. A detailed study of ICR subsequently reveals its counterintuitive non-monotonous variations, in the pores, with the magnitude of applied voltage and the pore length, that can help optimize their diode-like behavior. We further illustrate that while the hourglass-shaped nanopores yield the more efficient mechanical suppressors of ion transport, their cylindrical analogs are the superior rectifiers and mechanical amplifiers of ion conduction. Therefore, this article provides a blueprint for the strategic design of nanofluidic circuits to attain a robust, modular, and tunable control of ion transport under external electrical and mechanical stimuli.

Physics↗
DOE OSTI2024

Design and commissioning of resistive foil bolometer diagnostics on the ST40 tokamak

Following successful campaigns on the compact high field spherical tokamak ST40, resistive gold foil bolometers have now been installed to measure the radiated power profile. Positioned on the midplane, two bolometer cameras offer perspectives of the horizontal and vertical planes, while the third camera, situated above the midplane, provides a vertical view of the top divertor plates, including the X-point and the strike points. Further, these cameras use a commercial off-the-shelf data acquisition platform with modules specifically designed for bolometers in a Wheatstone bridge configuration, providing both phase sensitive detection and in situ calibration. This paper presents an overview of the design and functionality of all three cameras and the commissioning of the horizontal plane camera. The commissioning of the horizontal camera shows data from a range of plasma pulses, presenting a positive correlation between the relative profiles measured from the bolometer camera and an absolute extreme ultraviolet diode camera viewing along similar lines of sight.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Implementation of an impurity diagnostic suite on the Pegasus-III experiment

A suite of diagnostics used to assess impurity content and dynamics has been updated, upgraded, and installed on the Pegasus-III Experiment. Typical plasma parameters during local helicity injection start-up are τ shot ~10 ms, n e ~ 1 × 10 19 m –3 , and T e ~ 50 eV. The deployed diagnostics are compatible with this modest temperature and density regime and provide species identification, source localization, and estimation of radiation losses. Impurity species are determined by recording time-evolving, single line-of-sight spectra at 1.25 kfps using a SPRED (Survey, Poor Resolution, Extended Domain) vacuum ultraviolet spectrometer. SPRED is equipped with 450 g/mm grating, giving a spectral resolution of 0.33 nm and a spectral range from ~10 to 110 nm, useful to identify light impurity species in this temperature and density range. An absolutely calibrated spectrometer that collects light from the plasma at R tan = 15.9 cm and Δt ≥ 2 ms is used as a visible survey spectrometer and for continuum measurements. The radiated power from the plasma is estimated with a photodiode-based diagnostic. Two 16-channel absolute extreme ultraviolet diode arrays are placed behind pinhole apertures, resulting in 32 lines of sight at Z = 0, with a spatial resolution of 2–3 cm and a time response of 60 kHz. A photometrically calibrated collinear D α /near infrared filtered photodiode-based system measures the D α emission and around 1040 nm. All these instruments have been designed to suppress electromagnetic interference from megawatt-class switching power supplies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Limiting current in a collisional crossed-field gap

Crossed-field devices are often used in pulsed power and high-power microwave applications. Previous studies derived closed-form solutions for the limiting current of a vacuum crossed-field system, corresponding to the maximum permissible current for laminar flow, below and above the Hull cutoff B H for magnetic insulation. We extend these studies by introducing collision frequency into the electron force law as a friction term to derive the limiting current in a collisional crossed-field gap. The resulting solution recovers the vacuum crossed-field case in the limit of no collisions and the collisional space-charge limited current with general initial velocity for magnetic field B → 0. In the limit of infinite collisions, we obtain a crossed-field equivalent to the Mott–Gurney law for the maximum current permissible in a collisional, nonmagnetic diode. When the collision frequency ν is less than the electron cyclotron frequency Ω, increasing initial velocity makes the critical current nonmonotonic with increasing ν with the critical current higher at B = B H for ν = Ω. As for a misaligned crossed-field gap where a component of the magnetic field was introduced parallel to the electric field across the gap, magnetic insulation is eliminated and the discontinuity at B = B H for limiting current observed in a vacuum crossed-field gap vanishes. As B → ∞, the limiting current approaches a constant that depends on the initial velocity and the collision frequency.

Breen, Lorin I.↗
DOE OSTI2025

Multifrequency-resolved Hanbury Brown–Twiss effect

The Hanbury Brown–Twiss (HBT) effect holds a pivotal place in intensity interferometry and gave a seminal contribution to the development of quantum optics. To observe such an effect, both good spectral and timing resolutions are necessary. Most often, the HBT effect is observed for a single frequency at a time due to its limitations in dealing with multifrequencies simultaneously, halting and limiting some applications. Here, we report a fast and data-driven spectrometer built with a one-dimensional array of single-photon-sensitive avalanche diodes. We report observing the HBT effect for multiple frequencies at the same time. In particular, we observe the HBT effect for up to five lines of the Ne spectrum, but this can be improved upon to include more lines. Our work represents a major step in making spectral binning and multifrequency HBT more widely available. The technology we present can benefit both classical and quantum applications.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2025

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

The carrier extraction and transport mechanisms as well as the relative contributions of radiative and non-radiative recombination processes are investigated in high-quality strain-balanced GaInAs/GaAsP multi-quantum well solar cells recently implemented in record efficiency multijunction solar cells. A comprehensive suite of complementary characterization techniques including temperature- and suns-dependent photoluminescence and photovoltaic measurements are employed to analyze thermal escape and tunneling rates, which demonstrate the need to move beyond simple drift-diffusion models of p–n junctions. This study examines the processes that best characterize the operation of these devices across varying temperatures using a simple two-diode model, incorporating multiple transport protocols, and provides insights into the performance-limiting processes and pathways for their optimization.

14 SOLAR ENERGY↗
DOE OSTI2025

Calibration of a broadband x-ray crystal spectrometer using a continuum x-ray source and photon-counting detectors

We report measurements of sensitivity of a broadband (≃20–30 keV) x-ray crystal spectrometer using a bremsstrahlung continuum x-ray source and several detectors, including an energy-discriminating photon-counting point detector (Si drift diode, Amptek Inc.), imaging hybrid photon-counting detectors (Eiger2-Si and Eiger2-CdTe, DECTRIS Ltd.), and image plates (SR type). Sensitivity is defined as a ratio of the crystal-reflected energy-position-dispersed spectrum measured by a given detector to the incident non-dispersed spectrum measured using the energy-discriminating point detector. The sensitivity derived from data measured exclusively by the point detector is considered detector-independent and serves as a reference. The sensitivities derived from data collected with the hybrid photon-counting detectors were matched to the reference using a scale factor of 1.05. The image plate-derived sensitivities required a scale factor of 1.16 to match the reference. Furthermore, the resulting mismatch in the shapes of all measured scaled sensitivities in the range of the spectrometer was ≲±10%, while the mismatch between the shapes of the sensitivities corresponding to the Si-based detectors was ≲±2.5%.

Crystal optics↗
DOE OSTI2025

CdSeTe solar-cell performance with different dopant types

Four doping conditions were explored for CdTe-based solar cells: p-type As and P, n-type Al, and no intentional doping. In each case, the CdTe absorber was alloyed with Se, but only near the normal front-side, light entry for the cells, while the dopants were added from the back. Cells with p-dopants showed efficiencies up to 20% with front-side illumination, but the n-doped and undoped ones were close to zero. With back-side illumination, this was reversed with undoped up to 8% and p-doped ones only about 2%. These results are explained by Kelvin-probe measurements of electric-field profiles, which showed that the diode field was near the front for the higher-efficiency p-doping, but near the back for undoped and n-doped.

14 SOLAR ENERGY↗
DOE OSTI2026

Calculating the space-charge-limited current density for nonplanar geometries by simulating the charge-free electric field

Calculating the space-charge-limited-current density (SCLCD) for a complicated diode geometry often requires computationally expensive particle-in-cell (PIC) codes. Here, this paper addresses this issue by using the charge-free electric field $E_0$ calculated using COMSOL Multiphysics to determine local and global SCLCD. The SCLCD obtained by using the surface average of $|E_0|^2$ on the cathode recovers theoretical results for one-dimensional (1D) planar, cylindrical, and tip-to-tip geometries in appropriate limits. We next compared tip-to-tip calculations with the SCLCD obtained using the PIC code Empire. The SCLCD calculated using COMSOL agreed well with Empire for flatter 1D tip-to-tip geometries and diverged with increasing sharpness. Physically, Empire predicts lower SCLCD than COMSOL because the electrons spread due to concentrated space-charge at the tip, whereas theory assumes that the electrons follow the charge-free electric field lines. We further assess the behavior of the SCLCD for tips protruding from the centers of flat, circular plates of various areas. Larger plate areas with constant tip size recover the 1D planar SCLCD globally and 1D tip-to-tip SCLCD locally, while reducing the difference between Empire and COMSOL calculations since larger plates capture more of the emitted electrons, reducing SCLCD suppression due to beam spreading. These results show that charge-free electric field simulations can be used to determine the SCLCD without needing to simulate particle dynamics in PIC.

Wright, Jack K. [Purdue Univ., West Lafayette, IN ↗
DOE OSTI2022

Proximity enhanced magnetism at NiFe 2 O 4 /Graphene interface

Here, we explore the change in effective magnetic anisotropy of the ferrimagnetic (FM) insulator nickel ferrite (NFO) thin film due to the inclusion of monolayer graphene (MLG) grown on top of the NFO layer. This was done by performing radio frequency (RF) transverse susceptibility (TS) measurements on bare NFO and NFO/MLG bilayer samples for both in-plane (IP) and out-of-plane (OOP) configurations utilizing a tunnel diode oscillator technique. Our magnetometry measurements indicated an enhancement in the overall saturation magnetization of the NFO/MLG bilayer with respect to the bare NFO film. The TS measurements reveal that the inclusion of MLG reduces the effective magnetic anisotropy for both IP and OOP configurations drastically, by up to a factor of 2 over the temperature range 40 K ≤ T ≤ 280 K. Since NFO is a magnetic substrate, it is possible that NFO could induce magnetic ordering in MLG at the NFO/MLG interface via the magnetic proximity effect. Furthermore, since NFO is insulating and MLG is a semimetal, there likely exists a large conductivity difference at the interface, making charge transfer plausible. These two effects could modify the interfacial magnetism leading to a change in the effective magnetic anisotropy. These results highlight the importance of understanding the interfacial magnetism of FM/MLG heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Experimental and theoretical description of the process of contact laser surgery with a titanium-doped optothermal fibre converter

In an in vitro experiment simulating a surgeon’s actions in the process of contact laser surgery of soft biological tissue, the dependences of the temperature of a titanium-doped optothermal fibre converter (TOTFC) and the depths of coagulation and ablation of biological tissue on the average radiation power of a diode laser with a wavelength of 980 nm and on the speed of the converter movement along biological tissue are obtained. The structural, optical, and thermophysical models of TOTFC are discussed, as well as the thermophysical model of the interaction of a laser-heated converter with biological tissue, which takes into account the temperature dependences of the basic thermophysical parameters of the converter and biological tissue, as well as the contribution of the thickness h{sub int} of the water vapour layer between the converter and biotissue. It is shown that the proposed model allows describing the result of contact laser surgery of soft biotissue with TOTFC adequately to the experiment. (laser biophotonics)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Study of saturated-absorption resonances on the {sup 3}P{sub 0, 1, 2} – {sup 3}D{sub 1, 2, 3} transitions of magnesium atoms in a hollow-cathode discharge cell

The saturated-absorption resonances on the {sup 3}P{sub 0, 1, 2} – {sup 3}D{sub 1, 2, 3} transitions of magnesium atoms in a hollow-cathode discharge cell are studied. The line width (FWHM) for the observed saturated-absorption resonance on the 3{sup 3}P{sub 0} → 3{sup 3}D{sub 1} transition turns out to be ∼220 MHz. Experiments are performed using a system based on a 766-nm diode laser with amplification and frequency doubling in a nonlinear BiBO crystal. The results obtained are of interest for sub-Doppler cooling on the 3{sup 3}P{sub 2} → 3{sup 3}D{sub 3} transition. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Pump depletion in Raman lasing in a graded index multimode fibre

We examine multimode diode laser pump depletion in a graded index multimode (MM) fibre Raman laser generating a high-quality Stokes beam. Spatial ‘hole burning’ in the transmitted pump beam is demonstrated. A balance model is constructed for interaction of the pump and Stokes waves in the MM Raman laser. Analytical formulas are derived and used in calculations demonstrating qualitative agreement with experimental data. The origin of the observed quantitative discrepancies is discussed. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Decoding ultrafast polarization responses in lead halide perovskites by the two-dimensional optical Kerr effect

Significance Optoelectronic devices, such as photovoltaics or light-emitting diodes, are based on the interaction of light with charges in the active material. Lead halide perovskites (LHPs) have emerged as excellent materials for optoelectronics, but mysteries remain as to how these materials interact with light. Here, we develop a spectroscopic method to observe the nearly instantaneous responses of LHPs to propagating light fields. This method has allowed us to precisely trace a nonlinear material response resulting from the mixing of different light components overtaking each other during propagation. The resulting oscillatory signals could be easily confused with collective motions of ions or molecules, but are quantitatively accounted by strong nonlinear mixing and polarization-dressed light propagation in single-crystal LHPs.

14 SOLAR ENERGY↗
DOE OSTI2021

Surface equilibration mechanism controls the molecular packing of glassy molecular semiconductors at organic interfaces

Significance Because glasses are nonequilibrium materials, even a single-component system has an enormous number of distinct glass structures. Physical vapor deposition (PVD) is an important tool for preparing a wide range of these glasses. While the substrate can influence structure for hundreds of nanometers for crystalline and liquid crystalline systems, little is known about the structure of PVD glasses near an underlying substrate. This is important for organic electronics, as layers of PVD glasses as thin as 10 nm are used as active elements in organic light-emitting diodes, and molecular packing is vital to performance. We show that the free surface controls molecular packing of PVD glasses near a buried interface rather than the substrate, in sharp contrast with crystalline systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Abstract The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

Physics↗
DOE OSTI2021

High-fidelity modeling of breakdown in helium: initiation processes and secondary electron emission

Understanding the role of physical processes contributing to breakdown is critical for many applications in which breakdown is undesirable, such as capacitors, and applications in which controlled breakdown is intended, such as plasma medicine, lightning protection, and materials processing. The electron emission from the cathode is a critical source of electrons which then undergo impact ionization to produce electrical breakdown. In this study, the role of secondary electron yields due to photons (γ ph ) and ions (γ i ) in direct current breakdown is investigated using a particle-in-cell direct simulation Monte Carlo model. The plasma studied is a one-dimensional discharge in 50 Torr of pure helium with a platinum cathode, gap size of 1.15 cm, and voltages of 1.2–1.8 kV. The current traces are compared with experimental measurements. Larger values of γ ph generally result in a faster breakdown, while larger values of γ i result in a larger maximum current. The 58.4 nm photons emitted from He(2 1 P) are the primary source of electrons at the cathode before the cathode fall is developed. Of the values of γ ph and γ i investigated, those which provide the best agreement with the experimental current measurements are γ ph = 0.005 and γ i = 0.01. In this work, these values are significantly lower than those in the literature for pristine platinum or for a graphitic carbon film which we speculate may cover the platinum. This difference is in part due to the limitations of a one-dimensional model but may also indicate surface conditions and exposure to a plasma can have a significant effect on the secondary electron yields. The effects of applied voltage and the current produced by a UV diode which was used to initiate the discharge, are also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗