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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Integration of Ultrawide Bandgap Photoconducting Semiconductor Switches into High-Voltage, High-Current Pulser Systems

In this feasibility study we will evaluate the viability of integrating ultrawide bandgap (UWBG) photoconducting semiconductor switches (PCSS) in high-voltage pulser systems capable of driving low-impedance dynamic loads critical for next-generation accelerator and RF-source applications. The project consisted of developing modelling tools that would inform design of UWBG PCSS packages that could be mounted onto conventional circuit boards. Specifically, we are interested in evaluating the following through simulation software: (1) resistance to electrical breakdown (2) proximity effects due to high-frequency skin effect (3) transient behavior from switching (4) effective transmission of RF signals (5) thermal dynamics of the switch under operation (6) sensitivity to inhomogeneities in optical excitation of the material (7) cross-talk effects from parallel switching structures, and (8) susceptibility of system to damaged components. The project resulted in the development of a special-purpose circuit code that implements photoconductivity physics. This code was used to evaluate objectives 1-6 above, identifying a critical requirement associated with the need for fine control of dopant concentrations in the UWBG material to reach an optimal solution for voltage standoff and laser light responsivity requirements. In addition, we identified that the temperature dependence of the electrical conductivity of this material was typically not well-measured and developed a platform for measuring both the “dark” and “illuminated” conductivity on real physical switches in the lab to better inform our models.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Ultrafast High Voltage Kicker System Hardware for Ion Clearing Gaps

Jefferson Lab (JLab) will collaborate with Radiabeam, LLC in a DOE SBIR Phase II Project (DOE Grant No. DE-SC0019684, title: “Ultrafast High Voltage Kicker System Hardware for Ion Clearing Gaps”) to develop and test a MHz high voltage nanosecond kicker system that enables the time structure required by the ion traps for high current electron beam cooling. High current (in particular energy recovery) linac based electron cooling facilities for medium to high energy bunched proton or ion beams are of great interest for the recently funded Electron-Ion Collider (EIC) to which Jefferson Lab plays a critical role. The successful execution of this project will enable the capability to mitigate the ion trapping effect and circumvent a major obstacle preventing reliable operation of the crucial cooling facilities.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High Speed Medium Voltage CHP System with Advanced Grid Support

The project was a collaboration between Clemson University and TECO Westinghouse Motor Company. The goal of the project was to develop a medium voltage commercial grid-tied system with advanced grid support functions. Current state-of-the-art in medium voltage, multi-megawatt power electronic systems do not support advanced grid functions, traditionally due to power electronic limitations and required applications. The developed system is capable of interacting with the power system at the distribution level to efficiently integrate gas turbine generation systems or any other ac generation system with up to 20MWe of power production capacity. This project demonstrated a high level of technical readiness of the 1MW, 500Hz, 15000 RPM high frequency Combined Heat and Power (CHP) generator and electric machine system, utilizing advanced grid support functions required by IEEE Std. 1547-2018.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable, legacy aluminum back surface field (Al-BSF) cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60deg C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission (IEC) Technical Specification 62804-1; 70 deg C/70% RH for 200 h; and 85 deg C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage (I-V) curve tracing. Final characterizations included: Suns-Voc; spatial mapping of external quantum efficiency (EQE); high-resolution photoluminescence (PL), EL, and dark lock-in thermography (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline-corrosion and -delamination as well as other concurrent degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗
DOE OSTI2025

Lightning Induced Interior Fields And Voltage Bounds For Coaxial Topologies

We assemble bounding formulas for the interior fields and pin voltages inside a cylindrical coaxial Faraday cage which has been struck by lightning. Approximate formulas for penetrations through a circumferential door slot with subsequent coupling to the interior center conductor structure. Fields at the opposite open end are estimated and used to drive a capped connector and estimate interior pin voltages. Finally, penetrations through small circular holes and direct diffusion through the barrier are also addressed.

42 ENGINEERING↗
DOE OSTI2021

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions

Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Understanding and Mitigating the Dissolution and Delamination Issues Encountered with High-Voltage LiNi 0.5 Mn 1.5 O 4

In our initial study on the high-voltage 5 V cobalt-free spinel LiNi 0.5 Mn 1.5 O 4 (LNMO) cathode, we discovered a severe delamination issue in the laminates when cycled at a high upper cut-off voltage (UCV) of 4.95 V, especially when a large cell format was used. This delamination problem prompted us to investigate further by studying the transition metal (TM) dissolution mechanism of cobalt-free LNMO cathodes, and as a comparison, some cobalt-containing lithium nickel manganese cobalt oxides (NMC) cathodes, as the leachates from the soaking experiment might be the culprit for the delamination. Unlike other previous reports, we are interested in the intrinsic stability of the cathode in the presence of a baseline Gen2 electrolyte consisting of 1.2 M of LiPF 6 in ethylene carbonate/ethyl methyl carbonate (EC/EMC), similar to a storage condition. The electrode laminates (transition metal oxides, transition metal oxides, TMOs, coated on an Al current collector with a loading level of around 2.5 mAh/cm 2 ) or the TMO powders (pure commercial quality spinel LNMO, NMC, etc.) were stored in the baseline solution, and the transition metal dissolution was studied through nuclear magnetic resonance, such as 1 H NMR, 19 F NMR, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometry (ICP-MS). Significant electrolyte decomposition was observed and could be the cause that leads to the TM dissolution of LNMO. To address this TM dissolution, additives were introduced into the baseline electrolyte, effectively alleviating the issue of TM dissolution. The results suggest that the observed delamination is caused by electrolyte decompositions that lead to etching, and additives such as lithium difluorooxalato borate and p-toluenesulfonyl isocyanate can alleviate this issue by forming a firm cathode electrolyte interface. This study provides a new perspective on cell degradation induced by electrode/electrolyte interactions under storage conditions.

25 ENERGY STORAGE↗
DOE OSTI2022

Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm 2 for device dimensions from 5 x 5 to 100 x 100 µm 2 . The µLEDs emit at 692 nm at 5 A/cm 2 and 637 nm at 100 A/cm 2 , corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of µLEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red µLEDs can be realized with further material optimizations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

State Estimation-Based Distributed Energy Resource Optimization for Distribution Voltage Regulation in Telemetry-Sparse Environments Using a Real-Time Digital Twin

Real-time state estimation using a digital twin can overcome the lack of in-field measurements inside an electric feeder to optimize grid services provided by distributed energy resources (DERs). Optimal reactive power control of DERs can be used to mitigate distribution system voltage violations caused by increased penetrations of photovoltaic (PV) systems. In this work, a new technology called the Programmable Distribution Resource Open Management Optimization System (ProDROMOS) issued optimized DER reactive power setpoints based-on results from a particle swarm optimization (PSO) algorithm wrapped around OpenDSS time-series feeder simulations. This paper demonstrates the use of the ProDROMOS in a RT simulated environment using a power hardware-in-the-loop PV inverter and in a field demonstration, using a 678 kW PV system in Grafton (MA, USA). The primary contribution of the work is demonstrating a RT digital twin effectively provides state estimation pseudo-measurements that can be used to optimize DER operations for distribution voltage regulation.

Darbali-Zamora, Rachid↗
DOE OSTI2021

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗
DOE OSTI2024

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 6 –10 8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

Physics↗
DOE OSTI2024

High-current, high-voltage AlN Schottky barrier diodes

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm 2 ), high current density (>5 kA cm −2 ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al 0.75 Ga 0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 4 .

Quiñones, C. E. (ORCID:0000000192703747)↗
DOE OSTI2024

Stable and high voltage and power output of CEA-MFCs internally connected in series (iCiS-MFC)

The voltage output of a single MFC is normally less than 0.8 V, often less than 0.3 V at maximum power output, which greatly limits the application of MFCs. When MFCs are scaled up, however, increasing reactor size has typically resulted in decreased power density. In this study, we developed a novel MFC configuration that contains multiple cloth electrode assemblies in which the MFCs were internally connected in series (iCiS-MFC). The iCiS-MFC, equivalent to 3 CEA-MFCs, produced a high voltage output over 1.8 V and a maximum power density of 3.5 W m -2 using carbon cloth cathodes containing activated carbon as the catalyst. This power density is 6% higher than that reported for a similar smaller CEA-MFC, indicating that power can be maintained during scale-up with a greater than 33-fold increase in total cathode surface area and greater than 20-fold increase in reactor volume. High stability was also demonstrated based on the performance of the iCiS-MFC over a period of one year of operation. The high power and stability is likely due, in part, to a more efficient means of current collection through the internal series connection, which also avoids the use of expensive current collectors. These results clearly demonstrate the great potential of this MFC design for further scaling-up.

25 ENERGY STORAGE↗
DOE OSTI2024

CryoEM structures of the human CLC-2 voltage-gated chloride channel reveal a ball-and-chain gating mechanism

CLC-2 is a voltage-gated chloride channel that contributes to electrical excitability and ion homeostasis in many different tissues. Among the nine mammalian CLC homologs, CLC-2 is uniquely activated by hyperpolarization, rather than depolarization, of the plasma membrane. The molecular basis for the divergence in polarity of voltage gating among closely related homologs has been a long-standing mystery, in part because few CLC channel structures are available. Here, we report cryoEM structures of human CLC-2 at 2.46 – 2.76 Å, in the presence and absence of the selective inhibitor AK-42. AK-42 binds within the extracellular entryway of the Cl – -permeation pathway, occupying a pocket previously proposed through computational docking studies. In the apo structure, we observed two distinct conformations involving rotation of one of the cytoplasmic C-terminal domains (CTDs). In the absence of CTD rotation, an intracellular N-terminal 15-residue hairpin peptide nestles against the TM domain to physically occlude the Cl – -permeation pathway. This peptide is highly conserved among species variants of CLC-2 but is not present in other CLC homologs. Previous studies suggested that the N-terminal domain of CLC-2 influences channel properties via a “ball-and-chain” gating mechanism, but conflicting data cast doubt on such a mechanism, and thus the structure of the N-terminal domain and its interaction with the channel has been uncertain. Through electrophysiological studies of an N-terminal deletion mutant lacking the 15-residue hairpin peptide, we support a model in which the N-terminal hairpin of CLC-2 stabilizes a closed state of the channel by blocking the cytoplasmic Cl – -permeation pathway.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1964

Simple circuit provides adjustable voltage with linear temperature variation

A bridge circuit giving an adjustable output voltage that varies linearly with temperature is formed with temperature compensating diodes in one leg. A resistor voltage divider adjusts to temperature range across the bridge. The circuit is satisfactory over the temperature range of minus 20 degrees centigrade to plus 80 degrees centigrade.

Moede, L. W.↗
NASA NTRS1963

A MAGNETIC CORE VOLTAGE-TO-FREQUENCY CONVERTER

Controlling the frequency of a square-loop magnetic core oscillator using a dc voltage to give a voltage-to-frequency conversion for use in pulse frequency modulated telemetry systems

PFM TELEMETRY↗