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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Semiconductor step-stress testing

Report describes extensive program to test behavior of discrete diodes and transistors subjected to power and temperature overstress. Commercially available bipolar and field effect transistors and diodes were stressed between 0.5 and 1.75 times maximum rated power. Two groups were temperature stressed: 160 hour steps starting at 75 C to maximum of 300 C. Cumulative failures and changes in device parameters were monitored and reasons for failures presented.

Source record↗
NASA NTRS1980

Ohmic contact to GaAs semiconductor

Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.

Hovel, H. J.↗
NASA NTRS1980

Excess noise in Pb(1-x)Sn(x)Se semiconductor lasers

The noise characteristics of the TDL were studied for frequencies less than 20 kHz. For heterodyne applications, the high frequency ( 1 MHz) characteristics are also important. Therefore, the high frequency noise characteristics of the TDL were studied as a part of a full TDL characterization program which has been implemented for the improvement of the TDL as a local oscillator in the LHS system. It was observed that all the devices showed similar high frequency noise characteristics even though they were all constructed using different techniques. These common high frequency noise characteristics are reported.

Harward, C. N.↗
NASA NTRS1980

Development and performance of a laser heterodyne spectrometer using tunable semiconductor lasers as local oscillators

A diode laser based IR heterodyne spectrometer for laboratory and field use was developed for high efficiency operation between 7.5 and 8.5 microns. The local oscillator is a PbSSe tunable diode laser kept continuously at operating temperatures of 12-60 K using a closed cycle cooler. The laser output frequency is controlled and stabilized using a high precision diode current supply, constant temperature controller, and a shock isolator mounted between the refrigerator cold tip and the diode mount. Single laser modes are selected by a grating placed in the local oscillator beam. The system employs reflecting optics throughout to minimize losses from internal reflection and absorption, and to eliminate chromatic effects. Spectral analysis of the diode laser output between 0 and 1 GHz reveals excess noise at many diode current settings, which limits the infrared spectral regions over which useful heterodyne operation can be achieved. System performance has been studied by making heterodyne measurements of etalon fringes and several Freon 13 (CF3Cl) absorption lines against a laboratory blackbody source. Preliminary field tests have also been performed using the Sun as a source.

Glenar, D.↗
NASA NTRS1980

Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam

The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

Von Roos, O.↗
NASA NTRS1982

Selective Etching of Semiconductor Glassivation

Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

Casper, N.↗
NASA NTRS1980

High efficiency compound semiconductor concentrator photovoltaics

Special emphasis was given to the high yield pilot production of packaged AlGaAs/GaAs concentrator solar cells, using organometallic VPE for materials growth, the demonstration of a concentrator module using 12 of these cells which achieved 16.4 percent conversion efficiency at 50 C coolant inlet temperature, and the demonstration of a spectral splitting converter module that achieved in excess of 20 percent efficiency. This converter employed ten silicon and ten AlGaAs cells with a dichroic filter functioning as the beam splitter. A monolithic array of AlGaAs/GaAs solar cells is described.

Borden, P.↗
NASA NTRS1981

Experiment Requirements and Implementation Plan (ERIP) for semiconductor materials growth in low-G environment experiment no. MPS-77F087

Crystals of the intermetallic compound Pb1-xSnxTe will be grown in furnaces on the Space Shuttle. The reasons for conducting this growth in space, the program of investigation to develop the space experiment and the requirements that are placed on the Space Shuttle furnace are discussed. Also included are relevent thermophysical properties of Pb1-xSnxTe to the degree which they are known.

Crouch, R. K.↗
NASA NTRS1978

Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

Kerns, D. V., Jr.↗
NASA NTRS1980

Materials processing threshold report. 1: Semiconductor crystals for infrared detectors

An extensive search was performed of the open literature pertaining to infrared detectors to determine what constitutes a good detector and in what way performance is limited by specific material properties. Interviews were conducted with a number of experts in the field to assess their perceptions of the state of the art and of the utility of zero-gravity processing. Based on this information base and on a review of NASA programs in crystal growth and infrared sensors, NASA program goals were reassessed and suggestions are presented as to possible joint and divergent efforts between NASA and DOD.

Sager, E. V.↗
NASA NTRS1981

Low cost solar aray project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

This phase consists of the engineering design, fabrication, assembly, operation, economic analysis, and process support R&D for an Experimental Process System Development Unit (EPSDU). The mechanical bid package was issued and the bid responses are under evaluation. Similarly, the electrical bid package was issued, however, responses are not yet due. The majority of all equipment is on order or has been received at the EPSDU site. The pyrolysis/consolidation process design package was issued. Preparation of process and instrumentation diagram for the free-space reactor was started. In the area of melting/consolidation, Kayex successfully melted chunk silicon and have produced silicon shot. The free-space reactor powder was successfully transported pneumatically from a storage bin to the auger feeder twenty-five feet up and was melted. The fluid-bed PDU has successfully operated at silane feed concentrations up to 21%. The writing of the operating manual has started. Overall, the design phase is nearing completion.

Source record↗
NASA NTRS1981

Semiconductor-ferroelectric nonvolatile memory using anomalous high photovoltages in ferroelectric ceramics

A small ferroelectric ceramic element is used with an insulating gate transistor and two diodes as an electrically addressed, nonvolatile memory device which is read out nondestructively. The device uses the anomalous photovoltaic effect in ferroelectric ceramics, an effect in which the polarity and magnitude of photovoltages depend on the direction and magnitude of remanent polarization. Experimental results give memory characteristics. The device could be programmed with pulses as short as 200 ns. There is long-time retention of stored data.

Brody, P. S.↗
NASA NTRS1981

Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.

Miller, M. D.↗
NASA NTRS1977

Reliability study of opto-coupled semiconductor devices and Light Emitting Diodes (LED)

Opto-coupler and light emitting diode (LED) failure mechanisms and associated activation energies were determind from the results of environmental and accelerated lift tests of over 2,400 devices. The evaluation program included LED phototransistor opto-couplers from three sources, LED photoamplifier opto-couplers from a single source, and discrete infrared emitting LEDs from two sources. Environmental tests to evaluate device mechanical integrity included power cycling (10,000 cycles), temperature cycling (500 cycles) and a sequence of monitored shock, monitored vibration and constant acceleration. Multiple temperature operating life tests were conducted at ambient temperatures between 25 C and 200 C. Opto-couplers were operated in both the 'on' and 'off' states during life testing.

Maurer, R. C.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 2

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Price, W. E.↗