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At least 847 records · Page 47

Neuronal Plasma Membranes as Supramolecular Assemblies for Biological Memory

Biological memory is the ability to develop, retain, and retrieve information over time. Currently, it is widely accepted that memories are stored in synapses (i.e., connections between brain cells throughout the brain) through a process known as synaptic plasticity, which leads to either long-term potentiation (LTP) or long-term depression (LTD). However, the strengthening (LTP) and weakening (LTD) of synapses involve post-translational modifications to neural networks requiring de novo gene expression, a lengthy and energetically expensive process. Recently, we observed that lipid bilayers in the absence of peptides/proteins are capable of LTP, not unlike what has been observed in mammals and birds. As such, this finding has prompted us to postulate that the lipid bilayer provides a good model for understanding the molecular basis of biological memory. Here, in this article, we discuss the status, challenges, and opportunities of neuronal plasma membranes as structures for biological memory and learning, therapeutic targets for various brain disorders, and platforms for neural network developments.

59 BASIC BIOLOGICAL SCIENCES↗

Creep Performance of Novel Composite Heating Elements for Reheat Furnace Electrification

The iron and steel industry is critical for the modern world but is also very energy intensive and is a low margin industry. Hot rolling requires reheating steel slabs to ~1250 °C for hot rolling and involves yield loss due to scale formation. Electrification of this process using resistive heating could improve yield but is currently not possible due to the poor creep resistance of MoSi2 heating elements, which need to be operated well below their maximum temperatures when mounted horizontally. To solve this problem, novel MoSi2 composite heating elements with SiBCN ceramic reinforcements are being developed using high energy ball milling and spark plasma sintering. The creep performance of different heating elements and their corresponding microstructures and electrical properties will be presented.

36 - MATERIALS SCIENCE↗

High pressure Raman spectroscopy of boron-rich boron carbides up to 50 GPa

We investigated the effects of increased boron content on the resistance to non-hydrostatic stress-induced (NHSI) local amorphous zones in boron-rich boron carbide (BxC) compounds. Using high-pressure Raman spectroscopy, we subjected B 4.3 C, B 6.4 C, and B 10.4 C to pressures up to 50 GPa and monitored their responses. Our results show that higher boron content delays the onset of NHSI local amorphous zone formation, shifting it from 35 GPa in B 4.3 C to approximately 50 GPa in B 10.4 C. This enhanced resistance is attributed to a reduction in the formation of the B 12 (CCC) polytype, which is susceptible to amorphization, and the greater flexibility of B–B–B chains. Furthermore, alternative mechanisms, such as boron vacancy-driven C–C bond formation, provide additional insights into defect-mediated structural changes that may influence the amorphization process. In conclusion, these findings highlight the dual role of boron content and defect mechanisms in improving the structural stability of B x C materials under extreme environments.

36 MATERIALS SCIENCE↗

Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. Here, in this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality, as confirmed by transmission electron microscopy. Raised contacts on WSe 2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growing various TMDs, including WS 2 , MoSe 2 , MoS 2 , PtSe 2 , and NbS 2 .

contact engineering↗

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗

Theoretical Thermodynamics of Mixtures at High Pressures

The development of an understanding of the chemistry of mixtures of metallic hydrogen and abundant, higher-z material such as oxygen, carbon, etc., is important for understanding of fundamental processes of energy release, differentiation, and development of atmospheric abundances in the Jovian planets. It provides a significant theoretical base for the interpretation of atmospheric elemental abundances to be provided by atmospheric entry probes in coming years. Significant differences are found when non-perturbative approaches such as Thomas-Fermi-Dirac (TFD) theory are used. Mapping of the phase diagrams of such binary mixtures in the pressure range from approx. 10 Mbar to approx. 1000 Mbar, using results from three-dimensional TFD calculations is undertaken. Derivation of a general and flexible thermodynamic model for such binary mixtures in the relevant pressure range was facilitated by the following breakthrough: there exists an accurate nd fairly simple thermodynamic representation of a liquid two-component plasma (TCP) in which the Helmholtz free energy is represented as a suitable linear combination of terms dependent only on density and terms which depend only on the ion coupling parameter. It is found that the crystal energies of mixtures of H-He, H-C, and H-O can be satisfactorily reproduced by the same type of model, except that an effective, density-dependent ionic charge must be used in place of the actual total ionic charge.

Hubbard, W. B.↗

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. II. Surface reaction mechanism

Developing processes for highly selective etching of silicon nitride (Si 3 N 4 ) with respect to silicon dioxide (SiO 2 ) is a major priority for semiconductor fabrication processing. In this paper and in Paper I [Volynets et al., J. Vac. Sci. Technol. A 38, 023007 (2020)], mechanisms are discussed for highly selective Si3N4 etching in a remote plasma based on experimental and theoretical investigations. The Si 3 N 4 /SiO 2 etch selectivity of up to 380 was experimentally produced using a remote plasma sustained in NF 3 /N 2 /O 2 /H 2 mixtures. A selectivity strongly depends on the flow rate of H 2 , an effect attributed to the formation of HF molecules in vibrationally excited states that accelerate etching reactions. Based on experimental measurements and zero-dimensional plasma simulations, an analytical etching model was developed for etch rates as a function of process parameters. Reaction rates and sticking coefficients were provided by quantum chemistry models and also fitted to the experimental results. Etch rates from the analytical model show good agreement with the experimental results and demonstrate why certain etchants accelerate or inhibit the etch process. In particular, the modeling shows the important role of HF molecules in the first vibrationally excited state [HF( v = 1)] in achieving high Si 3 N 4 /SiO 2 selectivity.

42 ENGINEERING↗

(Invited) Utilization of Bio-CO 2 and Bio-Methane for Fuel Production: Integration Solid Oxide Electrolyzer, Low Energy Plasma Reformer with Fischer-Tropsch Synthesis

Transition to renewable energy is essential to achieve climate protection objectives. Besides storing electricity for later use, fuel production using renewable energy is an essential part of reducing fossil dependance. The highest value application in current markets is the production of liquid transportation fuels such as sustainable aviation fuels (SAF) from sustainable, ideally biogenic carbon resources. A system is presented for processing anaerobic digester gas for liquid hydrocarbon production. Bio-CO 2 is processed through a solid oxide electrolysis cell and bio-CH 4 through a low energy plasma reformer. The combined synthesis gas is supplied to a Fischer-Tropsch reactor for the production of liquid hydrocarbons. The combination of technologies nearly doubles the yield of biofuel by utilizing the bio-CO 2 in addition to the bio-CH 4 . Here, the product fuel is all bio-carbon but it also embodies renewable electric energy in a high-value, storable and transportable liquid hydrocarbon.

09 BIOMASS FUELS↗

Mechanisms of graphite ablation by sub-millisecond ytterbium fiber laser pulses

Graphite is a key material in a variety of cross-cutting applications in energy conversion, energy storage, and nuclear energy. Recently, temporally modulated continuous wave lasers have been shown to produce well-defined ablation features in graphite at relatively high processing speeds. In this work, we analyze in detail the laser ablation dynamics of single-pulse ablation in the sub-millisecond time regime to elucidate the origins of the resulting well-defined ablation craters using a combination of time-resolved emission imaging, diffuse reflection/scattering imaging, and optical emission spectroscopy. These multimodal in situ diagnostics revealed three main contributors to achieve well-defined ablation features: (1) rapid ejection of particles with ~100 m/s speed, (2) ablation of the graphite in the gaseous form, and (3) absence of bulk liquid motion, which is typically observed in laser processing of metals. Plasma plume formation was sustained throughout the duration of the laser pulse (500 μs). Here, this work provides insights into the complex physical and chemical mechanisms of sub-millisecond laser–matter interactions, which are critical for parameter space optimization and tailoring of laser machining and drilling processes.

42 ENGINEERING↗

Optical Technologies for UV Remote Sensing Instruments

Over the last decade significant advances in technology have made possible development of instruments with substantially improved efficiency in the UV spectral region. In the area of optical coatings and materials, the importance of recent developments in chemical vapor deposited (CVD) silicon carbide (SiC) mirrors, SiC films, and multilayer coatings in the context of ultraviolet instrumentation design are discussed. For example, the development of chemically vapor deposited (CVD) silicon carbide (SiC) mirrors, with high ultraviolet (UV) reflectance and low scatter surfaces, provides the opportunity to extend higher spectral/spatial resolution capability into the 50-nm region. Optical coatings for normal incidence diffraction gratings are particularly important for the evolution of efficient extreme ultraviolet (EUV) spectrographs. SiC films are important for optimizing the spectrograph performance in the 90 nm spectral region. The performance evaluation of the flight optical components for the Solar Ultraviolet Measurements of Emitted Radiation (SUMER) instrument, a spectroscopic instrument to fly aboard the Solar and Heliospheric Observatory (SOHO) mission, designed to study dynamic processes, temperatures, and densities in the plasma of the upper atmosphere of the Sun in the wavelength range from 50 nm to 160 nm, is discussed. The optical components were evaluated for imaging and scatter in the UV. The performance evaluation of SOHO/CDS (Coronal Diagnostic Spectrometer) flight gratings tested for spectral resolution and scatter in the DGEF is reviewed and preliminary results on resolution and scatter testing of Space Telescope Imaging Spectrograph (STIS) technology development diffraction gratings are presented.

Keski-Kuha, R. A. M.↗

Deep level study of chlorine-based dry etched β-Ga 2 O 3

Chlorine-based gases are used for the reactive ion etching (RIE) of β-Ga 2 O 3 . However, the effects of Cl-plasma on the electronic properties of β-Ga 2 O 3 are not known. In order to shed light on this topic, we carried out an experimental and theoretical study on β-Ga 2 O 3 epilayers treated with Cl 2 /Ar or BCl 3 /Ar plasma. We found four traps in the 0.2–0.8 eV energy range below the conduction band edge (EC). Two of these, located at E C -0.24 eV and E C -0.28 eV, arise only when the epilayers are treated with BCl 3 /Ar. While the involvement of Cl in their microscopic structure is not discarded, the possibility that these two levels might have an intrinsic nature seems more plausible. Our findings might explain the reported effects on the Schottky barrier diodes of β-Ga 2 O 3 when RIE is employed during processing.

36 MATERIALS SCIENCE↗

Composite wall concept for high temperature turbine shrouds: Survey of low modulus strain isolator materials

Plasma sprayed yttria stabilized zirconium oxide turbine seal specimens, incorporating various low modulus porous metal strain isolator pads between the zirconium oxide and a dense metal substrate, were subjected to cyclic thermal shock testing. Specimens that had a low modulus pad composed of sintered FeNiCrAlY fibermetal survived 1000 thermal shock cycles without spalling of the ceramic. A figure of merit for the low modulus pad materials taking into consideration the elastic modulus, thermal conductivity, strength, and oxidation resistance of the pad was proposed, and showed reasonable agreement with the thermal shock results. A potential surface distress problem on the zirconium oxide, associated with nonuniform temperature distribution and rapid stress relaxation was identified. One approach to solving the surface distress problem through application of laser surface fusion of the zirconium oxide layer showed some promise, but improvements in the laser surface fusion process are necessary to prevent process associated damage to the ceramic.

Bill, R. C.↗

Compositional Impact of Io Volcanic Emissions on Jupiter's Magnetosphere and the Icy Galilean Moons

The magnetospheric ion population of Jupiter is dominated by the 1000 kg/s of iogenic material constantly ejected by IO volcanism as neutral gas (approx. 1 kg/s goes out as high speed dust grains), subsequent atmospheric losses to the IO torus, and radial transport of torus ions throughout the magnetosphere. As that magnetosphere is greatly distended in radial size by the iogenic plasma loading, so are surfaces of the other Galilean moons also significantly, and perhaps even dominantly, affected by iogenic plasma bombardment, e.g. at the level up to 0.2 kg/s heavy ions (mostly O and S) onto Europa as per local plasma ion measurements. In comparison, cometary impacts onto IO deliver about 0.02 kg/s of impact ejecta to Europa via ballistic transfer through the Jupiter system. The magnetosphere of this system operates as a powerful engine to produce and transport ions from the IO source to the surfaces of these other moons, and any future orbiter missions to these moons must account for surface distributions of the iogenic material and its chemical effects before real assessments can be made of sensible chemical materials otherwise arising from primordial formation and subsequent evolution of these moons. This is a fundamental problem of space weathering that must be addressed for all planetary bodies with thin atmospheres and direct surface exposure to their space plasma environments. Long-standing debates from Galileo Orbiter measurements about the origins of hydrate sulfates at Europa present examples of this problem, as to whether the sulfates arise from oceanic minerals or from iogenic sulfur chemistry. Any orbiter or landed mission to Europa for astrobiological investigations would further need to separate the potential chemical biosignatures of life or its precursors from the highly abundant background of iogenic material. Although no single ion carries a tag identifying it as of iogenic or other origin, the elemental abundance distributions of ions to be measured throughout the jovian magnetosphere and in the local moon environments can act as tracers if we know from direct measurements and models the distributions at the mostly likely sources, i.e. at IO. However, our knowledge of these abundances are very limited from earlier in-situ and remote measurements, mainly confined to major (S, O) and some minor (Na, K, Cl) species with abundances at or above a few percent relative to O. Future in-situ plasma measurements by the planned Jupiter Europa Orbiter and Jupiter Ganymede Orbiter missions should extend the abundance coverage to minor and even trace elemental species. For Europa astrobiological investigations it is also important to specify iogenic inputs and surface processing of isotopic species. We discuss the range of abundance distributions arising from models for IO hot volcanic emissions, and from the subsequent dynamics of ion injection, magnetospheric transport, and icy moon surface bombardment.

Cooper, John↗

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Kaul, Anupama↗

The sputtering of insulating materials by fast heavy ions

In this paper recent experimental results on sputtering of UF4 and H2O (ice) by fast heavy ions are reviewed. Measurements have been made of the dependence of the sputtering yield on the incident ion type, charge state, and energy. In the case of UF4, the energy spectra of neutral sputtered particles have been obtained as well. There is a clear dependence of the sputtering yield on the electronic part of the stopping power, and the yield is strongly affected by the charge state of the incident ion, which shows that in the near-surface region from which sputtered particles arise, the charge state of the incident ion has not reached equilibrium. The shape of the energy spectra observed for UF4 targets is that expected from a thermal distribution rather than that of the collision cascade form typical of ordinary sputtering. A model of the sputtering-track registration process that has arisen from these data is shown to provide a framework of understanding the close relationship of these observations to the 'plasma desorption' of marcromolecules.

Seiberling, L. E.↗

Mass spectrometric investigations into 3D printed parts to assess radiopurity as ultralow background materials for rare event physics detectors

The mass concentrations of 232 Th and 238 U in several 3D printing filaments and printed polymer parts are reported as measures of their radiopurity. In order to minimize background signals in rare event physics detectors, radiopure polymers are necessary as dielectric and structural materials in their construction. New data are reported for polyvinylidene fluoride (PVDF), polyphenylene sulfide (PPS), and two forms of polyetherimide (PEI, branded ULTEM 1010 and 9085). Data for starting filaments and both simple and complex printed parts are reported. PVDF filaments and simple printed beads, were found to have values of approximately 30 and 50 pg g -1 for 232 Th and 238 U, respectively, while a more complex spring clip part had slightly elevated 232 Th levels of 65 pg g -1 , with 238 U remaining at 50 pg g -1 . PPS filament was found to have concentrations of 270 and 710 pg g -1 for 232 Th and 238 U, respectively, and were not chosen to be printed as those levels were already higher than other material options. ULTEM 1010 filaments and printed complex spring clip parts were found to have concentrations of around 5 and 7 pg g -1 for 232 Th and 238 U, respectively, illustrating no significant contamination from the printing process. ULTEM 9085 filaments were found to have concentrations of around 9 and 5 pg g -1 for 232 Th and 238 U, respectively, while the printed complex spring clip part was found to have slightly elevated concentrations of 25 and 7 pg g -1 for 232 Th and 238 U, respectively. All these results were obtained using a novel dry ashing method in crucibles constructed of ultralow background electroformed copper or, when applicable, microwave assisted wet ashing digestion. Samples and process blanks were spiked with 229 Th and 233 U as internal standards prior to dry/wet ashing and determinations were made by inductively coupled plasma mass spectrometry (ICP-MS). In order to maintain high radiopurity levels, pre-cleaning the filaments before printing and post-cleaning the parts is recommended, although the printing process itself has shown to contribute very minute amounts of radiocontaminants.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

The Orbital Variation of Non-Thermal X-Ray Emission from eta Carinae

The collision of strong stellar winds in massive binary systems creates powerful shocks,which accelerates a small amount of particles to relativistic energies at the shock interface.This process is important in fundamental astrophysics in two ways;i) some particles may contribute to cosmic-rays observed around the Earth, whose origin is not well known, andii) it provides a good laboratory for particle acceleration physics as the shock occurs steadily in a predictable environment.Some relativistic particles collide with stellar photons or ambient material near the binary systemand emit non-thermal X-rays and gamma-rays, which are good probes of particle acceleration.This emission had been searched for decades but not found convincingly without sensitive high-energy telescopes.The NuSTAR telescope observed the enigmatic supermassive binary system eta Carinae multiple times after 2014 and found conclusive evidence of non-thermal emission from the star in the extremely hard X-ray band.This emission is prominent between 20-50 keV, below which thermal emission from shock colliding plasma dominates.It is relatively stable throughout the binary orbit, but it disappears near periastron when the wind colliding activity shuts off.This variation indicates that the non-thermal X-ray emission originates from the head-on wind-wind collision.The flat spectrum is consistent with inverse-Compton of stellar UV photons by accelerated electrons.The spectrum smoothly connects to a gamma-ray spectrum of a Fermi source detected around eta Carinae,suggesting that acceleration occurs up to the GeV energy.This result provide the strongest evidence so far that particle acceleration occurs at the wind colliding shock of a massive colliding wind binary system.

Hamaguchi, Kenji↗

Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis

The Earth’s magnetosphere is a system of multiple, co-located particle populations interacting via plasma waves. Things to understand are driving processes, radiation belt and ring current issues, auroral physics, internal plasma processes, and magnetosphere-ionosphere mapping issues. These plasma-physics processes enable the Earth’s magnetosphere to evolve in response to temporal changes in the solar wind and they underlie the phenomena of space weather, which impacts spacecraft systems, astronauts, radio communications, and ground based electric-power grids. The objective of 3SM is to measure magnetic field strength and to calibrate the Vector Magnetometer (VM) device to maintain absolute accuracy during a mission. The 3SM features make the instrument preferably suited not only for the traditional role of scalar magnetometers as absolute references for the calibration of the on-board vector instruments, but also for extended operational capacities, such as higher frequency scalar measurements (of potential interest for magnetosphere studies for the low frequency part of the spectrum) or autonomous scalar / vector operations. Diamond has been the solid-state platform of choice for quantum device technologies for some time, however, it suffers from difficulties such as scalability, integration, and cost. While the diamond platform is very useful for quantum technologies, further development is needed to make it viable. The material platform of choice for NASA Glenn’s Quantum Sensing And Spin Physics (Q-SASP) is silicon carbide (SiC). This is due to the much higher industry development of the SiC material platform for high-power and high-temperature electronics. It leverages both the decades-long SiC development expertise and infrastructure at NASA Glenn and its growing capabilities in quantum metrology. To make SiC devices usable for quantum technologies such as quantum sources, a much deeper understanding of defects is needed. Q-SASP is developing quantum metrology capabilities to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This can be achieved by analysis of zero-field splitting, low-field resonance, and singlet-triplet mixing through various forms of Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field Magnetic Resonance (NZFMR) spectroscopy. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices. The defect formation energies of V Si ,V C , V C V Si , N C V Si , N Si , N C in 4H-SiC are previously reported values in other research [2]-[3]. The defect formation energies of PSi and PC were calculated in GPAW [fig 1A]. The basic underlying mechanism of the zero-field phenomenon is the mixing of singlet and triplet states [4]-[5]. In most spin-dependent transport, two electron spins are involved, and thus one must consider each of their interactions with the field. We investigated the electronic and magnetic properties of 4H-SiC and 6H-SiC. The defect formation energy helps us determine what types of defects we are observing in the SiC EDMR experiment. They have very low formation energy (it is negative). The phosphorus substitution in 4H-SiC is a very stable defect. The band diagrams provide us with vital information about how the electronic properties of SiC (such as band gap) change as we add non-metal defects. The zero-field splitting parameters allow us to study the inflection point in the NZFMR [fig 1B]. We clearly observed zero-field splitting. We also noted that the zero-field splitting remained constant with changing bias. We aspect it zero-field splitting to remain constant while the hyperfine and exchange interaction perturbations shift under the influence of an external magnetic field. This is the essence of quantum magnetometry and self-calibration.

space plasma↗