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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Data compression for Eos on-board SAR processor

A lightweight, low-power, real-time data compressor design for the Earth Observing System (Eos) onboard synthetic aperture radar (SAR) processor is presented. The implementation is based on VLSI design of a pipelined binary tree-searched vector quantizer (VQ), utilizing space-qualifiable 1.25-micron CMOS technology. The implementation exploits VLSI system design principles such as the modularity, regular data flow, simple interconnection, localized communication, simple global control, and parallel/pipelined processing. The overall system requires 30 chips with only one VLSI processing element design. The total weight is about 1.2 lbs, with an estimated power dissipation of approximately 4 watts operating at the maximum input data rate. The projected throughput rate exceeds 5 MHz.

Chang, C. Y.↗
NASA NTRS1990

Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

Evidence is presented that two competing failure mechanisms exist in the Si-SiO2 system, with one mechanism dominating at low dose rates and the other at high. Much lower dose failures than expected were discovered at low dose rates (less than 0.1 rad(Si)/s) and very low dose rates (about 0.001 rad(Si)/s) in commercial SGS 4007 CMOS devices. These failure doses plotted versus dose rate have a bell-shaped curve, rather than the expected straight line (decreasing with increasing dose rate), indicating that a different failure mechanism is dominant at low dose rates than at high.

Goben, C. A.↗
NASA NTRS1990

Alpha-particle sensitive test SRAMs

A bench-level test is being developed to evaluate memory-cell upsets in a test SRAM designed with a cell offset voltage. This offset voltage controls the critical charge needed to upset the cell. The effect is demonstrated using a specially designed 2-micron n-well CMOS 4-kb test SRAM and a Po-208 5.1-MeV 0.61-LET alpha-particle source. This test SRAM has been made sensitive to alpha particles through the use of a cell offset voltage, and this has allowed a bench-level characterization in a laboratory setting. The experimental data are linked to a alpha-particle interaction physics and to SPICE circuit simulations through the alpha-particle collection depth. The collection depth is determined by two methods and found to be about 7 micron. In addition, alpha particles that struck outside the bloated drain were able to flip the SRAM cells. This lateral charge collection was observed to be more than 6 micron.

Buehler, M. G.↗
NASA NTRS1991

A neural net based architecture for the segmentation of mixed gray-level and binary pictures

A neural-net-based architecture is proposed to perform segmentation in real time for mixed gray-level and binary pictures. In this approach, the composite picture is divided into 16 x 16 pixel blocks, which are identified as character blocks or image blocks on the basis of a dichotomy measure computed by an adaptive 16 x 16 neural net. For compression purposes, each image block is further divided into 4 x 4 subblocks; a one-bit nonparametric quantizer is used to encode 16 x 16 character and 4 x 4 image blocks; and the binary map and quantizer levels are obtained through a neural net segmentor over each block. The efficiency of the neural segmentation in terms of computational speed, data compression, and quality of the compressed picture is demonstrated. The effect of weight quantization is also discussed. VLSI implementations of such adaptive neural nets in CMOS technology are described and simulated in real time for a maximum block size of 256 pixels.

Tabatabai, Ali↗
NASA NTRS1991

SEU hardened memory cells for a CCSDS Reed-Solomon encoder

A design technique to harden CMOS memory circuits against single event upset (SEU) in the space environment is reported. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and flip-flop design are presented to demonstrate the method. The flip-flop was used in the control circuitry for a Reed-Solomon encoder designed for the Space Station and Explorer platforms.

Whitaker, Sterling↗
NASA NTRS1991

Update on parts SEE suspectibility from heavy ions

JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.

Nichols, D. K.↗
NASA NTRS1990

Miniaturized optical correlator

A robust optical correlator that is a miniaturized version of the classic Vander-Lugt correlator is developed. The correlator consists of a simple diode laser for illumination and a CMOS photodetector to detect the correlation peak. A set of roof prisms is configured to fold the light path into a compact design. A holographic plate is used for storing the matched filter. This correlator is particularly applicable to docking autonomous vehicles near a predesignated landing mark. This miniature optical correlator is described in terms of its functional performance.

Scholl, M. S.↗
NASA NTRS1993

SRAM As An Array Of Energetic-Ion Detectors

Static random-access memory (SRAM) designed for use as array of energetic-ion detectors. Exploits well-known tendency of incident energetic ions to cause bit flips in cells of electronic memories. Design of ion-detector SRAM involves modifications of standard SRAM design to increase sensitivity to ions. Device fabricated by use of conventional complementary metal oxide/semiconductor (CMOS) processes. Potential uses include gas densimetry, position sensing, and measurement of cosmic-ray spectrum.

Buehler, Martin G.↗
NASA NTRS1993

Microelectronic Chips For Radiation-Dose Tests

Custom-made single-chip complementary metal-oxide semiconductor (CMOS) integrated circuit designed to reveal effects of ionizing radiation on itself and similar integrated circuits. Potential terrestrial use: safety-oriented monitoring of ionizing radiation at nuclear powerplants, nuclear-waste sites, and the like.

Buehler, Martin G.↗
NASA NTRS1993

Fast, Low-Power, Hysteretic Level-Detector Circuit

Circuit for detection of preset levels of voltage or current intended to replace standard fast voltage comparator. Hysteretic analog/digital level detector operates at unusually low power with little sacrifice of speed. Comprises low-power analog circuit and complementary metal oxide/semiconductor (CMOS) digital circuit connected in overall closed feedback loop to decrease rise and fall times, provide hysteresis, and trip-level control. Contains multiple subloops combining linear and digital feedback. Levels of sensed signals and hysteresis level easily adjusted by selection of components to suit specific application.

Arditti, Mordechai↗
NASA NTRS1993

X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I

X-ray-diffraction tests performed on aluminum conductors in commercial HI1-507A complementary metal oxide/semiconductor (CMOS) integrated-circuit analog multiplexers, both before and after circuits exposed to ionizing radiation from Co(60) source, and after postirradiation annealing at ambient and elevated temperatures. Tests in addition to electrical tests performed to determine effects of irradiation and of postirradiation annealing on electrical operating characteristics of circuits. Investigators sought to determine whether relationship between effects of irradiation on devices and physical stresses within devices. X-ray diffraction potentially useful for nondestructive measurement of stresses.

Shaw, David C.↗
NASA NTRS1993

X-Ray-Diffraction Tests Of Irradiated Electronic Devices: II

Report describes research on use of x-ray diffraction to measure stresses in metal conductors of complementary metal oxide/semiconductor (CMOS) integrated circuits exposed to ionizing radiation. Expanding upon report summarized in "X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I" (NPO-18803), presenting data further suggesting relationship between electrical performances of circuits and stresses and strains in metal conductors.

Shaw, David C.↗
NASA NTRS1992

High-speed architecture for the decoding of trellis-coded modulation

Since 1971, when the Viterbi Algorithm was introduced as the optimal method of decoding convolutional codes, improvements in circuit technology, especially VLSI, have steadily increased its speed and practicality. Trellis-Coded Modulation (TCM) combines convolutional coding with higher level modulation (non-binary source alphabet) to provide forward error correction and spectral efficiency. For binary codes, the current stare-of-the-art is a 64-state Viterbi decoder on a single CMOS chip, operating at a data rate of 25 Mbps. Recently, there has been an interest in increasing the speed of the Viterbi Algorithm by improving the decoder architecture, or by reducing the algorithm itself. Designs employing new architectural techniques are now in existence, however these techniques are currently applied to simpler binary codes, not to TCM. The purpose of this report is to discuss TCM architectural considerations in general, and to present the design, at the logic gate level, or a specific TCM decoder which applies these considerations to achieve high-speed decoding.

Osborne, William P.↗
NASA NTRS1992

Design and qualification of the SEU/TD Radiation Monitor chip

This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.

Buehler, Martin G.↗
NASA NTRS1992

Self synchronized asynchronous sequential pass transfer circuits

A new class of CMOS VLSI asynchronous sequential circuits utilizing pass transistors is introduced. This class of self synchronizing circuits eliminates the need for critical race free state assignments. These circuits synchronize the transition path action by forcing the circuit to sequence through proper unstable states.

Whitaker, Sterling R.↗
NASA NTRS1991

High resolution decoding of Multi-Anode Microchannel Array detectors

The Multi-Anode Microchannel Array (MAMA) is a photon counting detector which utilizes a photocathode for photon to electron conversion, a microchannel plate (MCP) for signal amplification and a proximity focused anode array for position sensitivity. The detector electronics decode the position of an event through coincidence discrimination. The decoding algorithm which associates a given event with the appropriate pixel is determined by the geometry of the array. A new algorithm incorporated into a CMOS Application Specific Integrated Circuit (ASIC) decoder which improves the pixel spatial resolution is described. The new algorithm does not degrade the detector throughput and does not require any modifications to the detector tube. The standard MAMA detector has a pixel size of 25 x 25 square microns, but with the new decoder circuit the pixel size is reduced to 12.5 x 12.5 square microns. We have built the first set of decode electronics utilizing the new ASIC chips and report here on the first imaging tests of this system.

Kasle, David B.↗
NASA NTRS1992

An observation of proton-induced latchup

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measures of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.

Nichols, Donald K.↗