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At least 811 records · Page 45

Characterization of devices, circuits, and high-temperature superconductor transmission lines by electro-optic testing

The development of a capability for testing transmission lines, devices, and circuits using the optically-based technique of electro-optics sampling was the goal of this project. Electro-optic network analysis of a high-speed device was demonstrated. The project involved research on all of the facets necessary in order to realize this result, including the discovery of the optimum electronic pulse source, development of an adequate test fixture, improvement of the electro-optic probe tip, and identification of a device which responded at high frequency but did not oscillate in the test fixture. In addition, during the process of investigating patterned high-critical-temperature superconductors, several non-contacting techniques for the determination of the transport properties of high T(sub c) films were developed and implemented. These are a transient, optical pump-probe, time-resolved reflectivity experiment, an impulsive-stimulated Raman scattering experiment, and a terahertz-beam coherent-spectroscopy experiment. The latter technique has enabled us to measure both the complex refractive index of an MgO substrate used for high-T(sub c) films and the complex conductivity of a YBa2Cu3O(7-x) sample. This information was acquired across an extremely wide frequency range: from the microwave to the submillimeter-wave regime. The experiments on the YBCO were conducted without patterning of, or contact to, the thin film. Thus, the need for the more difficult transmission-line experiments was eliminated. Progress in all of these areas was made and is documented in a number of papers. These papers may be found in the section listing the abstracts of the publications that were issued during the course of the research.

Whitaker, John F.↗

Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.

Lai, R.↗

NASA Tech Briefs, September 2012

Topics covered include: Beat-to-Beat Blood Pressure Monitor; Measurement Techniques for Clock Jitter; Lightweight, Miniature Inertial Measurement System; Optical Density Analysis of X-Rays Utilizing Calibration Tooling to Estimate Thickness of Parts; Fuel Cell/Electrochemical Cell Voltage Monitor; Anomaly Detection Techniques with Real Test Data from a Spinning Turbine Engine-Like Rotor; Measuring Air Leaks into the Vacuum Space of Large Liquid Hydrogen Tanks; Antenna Calibration and Measurement Equipment; Glass Solder Approach for Robust, Low-Loss, Fiber-to-Waveguide Coupling; Lightweight Metal Matrix Composite Segmented for Manufacturing High-Precision Mirrors; Plasma Treatment to Remove Carbon from Indium UV Filters; Telerobotics Workstation (TRWS) for Deep Space Habitats; Single-Pole Double-Throw MMIC Switches for a Microwave Radiometer; On Shaft Data Acquisition System (OSDAS); ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays; Flexible Architecture for FPGAs in Embedded Systems; Polyurea-Based Aerogel Monoliths and Composites; Resin-Impregnated Carbon Ablator: A New Ablative Material for Hyperbolic Entry Speeds; Self-Cleaning Particulate Prefilter Media; Modular, Rapid Propellant Loading System/Cryogenic Testbed; Compact, Low-Force, Low-Noise Linear Actuator; Loop Heat Pipe with Thermal Control Valve as a Variable Thermal Link; Process for Measuring Over-Center Distances; Hands-Free Transcranial Color Doppler Probe; Improving Balance Function Using Low Levels of Electrical Stimulation of the Balance Organs; Developing Physiologic Models for Emergency Medical Procedures Under Microgravity; PMA-Linked Fluorescence for Rapid Detection of Viable Bacterial Endospores; Portable Intravenous Fluid Production Device for Ground Use; Adaptation of a Filter Assembly to Assess Microbial Bioburden of Pressurant Within a Propulsion System; Multiplexed Force and Deflection Sensing Shell Membranes for Robotic Manipulators; Whispering Gallery Mode Optomechanical Resonator; Vision-Aided Autonomous Landing and Ingress of Micro Aerial Vehicles; Self-Sealing Wet Chemistry Cell for Field Analysis; General MACOS Interface for Modeling and Analysis for Controlled Optical Systems; Mars Technology Rover with Arm-Mounted Percussive Coring Tool, Microimager, and Sample-Handling Encapsulation Containerization Subsystem; Fault-Tolerant, Real-Time, Multi-Core Computer System; Water Detection Based on Object Reflections; SATPLOT for Analysis of SECCHI Heliospheric Imager Data; Plug-in Plan Tool v3.0.3.1; Frequency Correction for MIRO Chirp Transformation Spectroscopy Spectrum; Nonlinear Estimation Approach to Real-Time Georegistration from Aerial Images; Optimal Force Control of Vibro-Impact Systems for Autonomous Drilling Applications; Low-Cost Telemetry System for Small/Micro Satellites; Operator Interface and Control Software for the Reconfigurable Surface System Tri-ATHLETE; and Algorithms for Determining Physical Responses of Structures Under Load.

Source record↗

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗

Comparison of Thermal Coefficients for Two Microwave Detectors

Laboratory measurements were performed to compare the thermal coefficients of two microwave detectors that might be used for direct detection in L-band radiometers. In particular it was desired to compare the performance of a new-technology flash ADC (analog-to-digital converter) against that of an older-technology diode detector in series with a VFC (voltage-to-frequency converter). The outputs of two state-of-the-art detectors were recorded as a constant 1.414-GHz signal was input and the physical temperatures of the detectors were varied over a range of 10 C. As a further experiment, each detector was tested with a noise diode source and with a sine wave synthesizer source. Thermal coefficients were computed in terms of W/C and in terms of ppt/C at nominal operating temperatures reasonable for the individual devices. Finally, thermal coefficients were calculated in K/C to indicate the change in brightness temperature seen by a theoretical sea surface salinity radiometer employing each detector. The K/C for the flash ADC was determined to be about 2.8 times that of the diode/VFC. Different reactions of the ADC to a noise input and a sine wave input indicated that ADC tests for radiometric purposes, such as this one, should be performed using a noise input.

Mackenzie, Anne I.↗

In situ tuning of optomechanical crystals with nano-oxidation

Optomechanical crystals are a promising device platform for quantum transduction and sensing. Precise targeting of the optical and acoustic resonance frequencies of these devices is crucial for future advances on these fronts. However, fabrication disorder in these wavelength-scale nanoscale devices typically leads to inhomogeneous resonance frequencies. Here we achieve in situ , selective frequency tuning of optical and acoustic resonances in silicon optomechanical crystals via electric field-induced nano-oxidation using an atomic-force microscope. Our method can achieve a tuning range >2nm (0.13%) for the optical resonance wavelength in the telecom C-band, and >60MHz (1.2%) for the acoustic resonance frequency at 5 GHz. The tuning resolution of 1.1 pm for the optical wavelength and 150 kHz for the acoustic frequency allows us to spectrally align multiple optomechanical crystal resonators using a pattern generation algorithm. Our results establish a method for precise post-fabrication tuning of optomechanical crystals. This technique can enable coupled optomechanical resonator arrays, scalable resonant optomechanical circuits, and frequency matching of microwave-optical quantum transducers.

Hatipoglu, Utku (ORCID:0000000205119196)↗

Materials for Ultra‐Coherent, Mobile, Electron‐Spin Qubits

This research project has had the goal of gaining a better understanding of the physics of electrons bound to the surface of superfluid helium from both experimental and theoretical perspectives. It has particularly been aimed at two areas which had not been well studied: the relaxation and decoherence of the spin of the electrons on the helium surface and how the properties of underlying metallic layers affect the behavior of the electrons when the helium covering the metal is thin. This work is motivated in part by interest in using the spin of these electrons as a quantum bit, or qubit. Low levels of decoherence are advantageous for qubits, and moving the electrons, as one might do in a quantum processor, will be easiest if thin helium films can be employed. It had been suggested that spin decoherence should be very weak for electrons bound to superfluid He, but before this work there have been no quantitative studies of spin relaxation and decoherence. It is especially important to know how moving the electrons across the helium surface would affect their spin coherence. Calculations performed as part of this project show that the Rashba effective magnetic field, the mechanism which limits the spin coherence of mobile electrons in silicon-based devices (an actively pursued qubit technology), is exceptionally weak for electrons bound to helium. This project has identified other decoherence mechanisms which are stronger, but still weak compared to analogous silicon-based structures. Calculated spin coherence times for mobile electrons approach one day, as compared to microseconds in silicon. With coherence times of this magnitude, the spin qubit errors on helium will be completely dominated by errors in the quantum gates. In related work, the possibility of using an artificial spin-orbit interaction (a gradient magnetic field) for quantum operations on the electrons spins was considered. The calculations show that a moderate gradient field, small enough to be generated by a narrow superconducting wire, will enable high-fidelity quantum operations on electrons held in lithographically-defined quantum dots by driving them with a microwave electric field. The spin and motional coherence of the electrons is sufficient to allow high-fidelity 2-qubit quantum operations between electrons in neighboring quantum dots. As an outgrowth of experiments aiming to measure electron spin coherence it was discovered that very high densities of electrons can be stably supported on thin helium films coating ultra-smooth amorphous metallic layers. The measured densities are high enough that the electron system has almost certainly transitioned from an ordered array of electrons, known as a Wigner crystal (ordered by the electrons’ mutual repulsion), to a quantum fluid known as a Fermi liquid. This transition has been a subject of intense interest for over 40 years, since the electron Wigner crystal was first observed with electrons bound to superfluid helium, but it has never been unambiguously observed. Experiments are still underway in these new structures to definitively determine whether true quantum melting of the Wigner crystal has been demonstrated. This work has also catalyzed the development of a new approach for measuring the transport of electrons across very thin helium films, as will be needed for some of the quantum computing applications. The high electron density experiments as well as experiments with electrons bound in quantum dots have led to new techniques which may enable spin coherence measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of detached plasma profile in the divertor simulation experimental module of tandem mirror GAMMA 10/PDX

A divertor simulation experimental module (D-module) in the tandem mirror GAMMA 10/PDX was used for the study of plasma detachment. In previous studies, it was difficult to measure far-upstream plasma parameters in the D-module, and only electrostatic probes on the target plate were used to perform electron temperature and density measurements. Furthermore, to study the detached plasma structure, a Thomson scattering (TS) system and a microwave interferometer system have been installed to measure the inside plasma parameters of the D-module, and a movable electrostatic probe has been placed at the inlet of the D-module to measure the inlet plasma density and temperature. The TS system in the central cell observed the electron temperature and density of the core plasma simultaneously. These measurements revealed the entire density and temperature structure from the core plasma to the divertor plate. The line average electron density measured by the microwave interferometer showed a rollover behavior during detachment. The results indicated that the ionization region was located around the center of the D-module, and it appears to move upstream along the axis.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing

The diffusion behavior of Mg in Mg/N co-implanted GaN is investigated in response to a set of annealing conditions and methodologies, namely, 1000 °C/30 min thermal anneal, by high-temperature pulsed gyrotron microwave annealing at 1420 or 1500 °C, or by thermal and microwave annealing, sequentially. After 1000 °C annealing, the diffusion of Mg in GaN is found to be negligible, as measured by secondary ion mass spectrometry. Annealing by gyrotron microwave annealing alone induces the diffusion of Mg at a rate on the order of 10 −12 cm 2 /s. However, the use of a thermal anneal before microwave gyrotron annealing reduces this rate by an order of magnitude to 10 −13 cm 2 /s. We find that a model that considers Mg diffusion from an inhomogeneous medium that contains a defect-rich implanted region near-surface to a relatively pristine region below the implant range better explains the observed diffusion behavior than a conventional model that assumes a homogeneous medium. By analyzing the diffusion behavior using the Boltzmann–Matano method, we present a discussion of reduction in [V Ga ] by thermal annealing at 1000 °C, leading to a suppressed diffusion coefficient during subsequent high-temperature annealing relative to diffusion after 1420/1500 °C annealing alone. This effect holds potential for improvement in the precision of selectively doped regions for future applications based on the (Al)GaN material system. An improved field profile control in real devices can increase the breakdown and current-handling capabilities in power electronic applications.

Meyers, V.↗

Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment

The feasibility of Ka-band gallium nitride (GaN) based high power amplifier (HPA) for signal amplification in extreme planetary environment is investigated and its measured performance is presented. The data includes Pout, PAE, EVM for several waveforms and data rates, output spectrum, IMD, Noise Figure, and Gain. The data indicates excellent overall performance. Potential application of this HPA includes communication systems required to operate in the extreme hot environment of Mercury and Venus, extreme cold and high radiation environment of Jupiter’s icy moons, and Artemis missions that involve human/robotic exploration and long-term presence on the Moon.

Gallium Nitride↗

Microwave blackbodies for spaceborne receivers

The properties of microwave blackbody targets are explained as they apply to the calibration of spaceborne receivers. Also described are several practicable, blackbody targets used to test and calibrate receivers in the laboratory and in the thermal vacuum chamber. Problems with the precision and the accuracy of blackbody targets, and blackbody target design concepts that overcome some of the accuracy limitations present in existing target designs, are presented. The principle of the Brewster angle blackbody target is described where the blackbody is applied as a fixed-temperature test target in the laboratory and as a variable-temperature target in the thermal vacuum chamber. The reflectivity of a Brewster angle target is measured in the laboratory. From this measurement, the emissivity of the target is calculated. Radiatively cooled thermal suspensions are discussed as the coolants of blackbody targets and waveguide terminations that function as calibration devices in spaceborne receivers. Examples are given for the design of radiatively cooled thermal suspensions. Corrugated-horn antennas used to observe the cosmic background and to provide a cold-calibration source for spaceborne receivers are described.

Stacey, J. M.↗

5,120 Superconducting Bolometers for the PIPER Balloon-Borne CMB Polarization Experiment

We are constructing the Primordial Inflation Polarization Explorer (PIPER) to measure the polarization o[ the cosmic microwave background (CMB) and search for the imprint of gravity waves produced during an inflationary epoch in the early universe. The signal is faint and lies behind confusing foregrounds, both astrophysical and cosmological, and so many detectors are required to complete the measurement in a limited time. We will use four of our matured 1,280 pixel, high-filling-factor backshort-under-grid bolometer arrays for efficient operation at the PIPER CMB wavelengths. All four arrays observe at a common wavelength set by passband filters in the optical path. PIPER will fly four times to observe at wavelengths of 1500, 1100, 850, and 500 microns in order to separate CMB from foreground emission. The arrays employ leg-isolated superconducting transition edge sensor bolometers operated at 128mK; tuned resonant backshorts for efficient optical coupling; and a second-generation superconducting quantum interference device (SQUID) multiplexer readout. We describe the design, development, and performance of PIPER bo|ometer array technology to achieve background-limited sensitivity for a cryogenic balloon-borne telescope.

Benford, Dominic J.↗

5,120 Superconducting Bolometers for the PIPER Balloon-Borne CMB Polarization Experiment

We are constructing the Primordial Inflation Polarization Explorer (PIPER) to measure the polarization of the cosmic microwave background (CMB) and search for the imprint of gravity waves produced during an inflationary epoch in the early universe. The signal is faint and lies behind confusing foregrounds, both astrophysical and cosmological, and so many detectors are required to complete the measurement in a limited time. We will use four of our matured 1,280 pixel, high-filling-factor backshort-under-grid bolometer arrays for efficient operation at the PIPER CMB wavelengths. All four arrays observe at a common wavelength set by passband filters in the optical path. PIPER will fly four times to observe at wavelengths of 1500, 1100, 850, and 500 microns in order to separate CMB from foreground emission. The arrays employ leg-isolated superconducting transition edge sensor bolometers operated at 145 mK; tuned resonant backshorts for efficient optical coupling; and a second-generation superconducting quantum interference device multiplexer readout. We describe the design, development, and performance of PIPER bolometer array technology to achieve background-limited sensitivity for a cryogenic balloon-borne telescope.

Benford, Dominic J.↗

A Multi-modal Approach to Understanding Degradation of Organic Photovoltaic Materials

State-of-the-art organic photovoltaic (OPV) materials are composed of complex, chemically diverse polymeric and molecular structures that form highly intricate solid-state interactions, collectively yielding exceptional tunability in performance and aesthetics. These properties are especially attractive for semitransparent power-generating windows or shades in living environments, greenhouses, or other architectural integrations. However, before such a future is realized, a broader and deeper understanding of property stability must be acquired. Stability during operating and environmental conditions is critical, namely, material color steadfastness, optoelectronic performance retention, morphological rigidity, and chemical robustness. To date, no single investigation encompasses all four distinct, yet interconnected, metrics. Here, we present a multimodal strategy that captures a dynamic and interconnected evolution of each property during the course of an accelerated photobleaching experiment. We demonstrate this approach across relevant length scales (from molecular to visual macroscale) using X-ray photoelectron spectroscopy, grazing-incidence X-ray scattering, microwave conductivity, and time-dependent photobleaching spectroscopies for two high-performance semitransparent OPV blends—PDPP4T:PC 60 BM and PDPP4T:IEICO-4F, with comparisons to the stabilities of the individual components. We present direct evidence that specific molecular acceptor (fullerene vs nonfullerene) designs and the resulting donor–acceptor interactions lead to distinctly different mechanistic routes that ultimately arrive at what is termed “OPV degradation.” We directly observe a chemical oxidation of the cyano endcaps of the IEICO-4F that coincides with a morphological change and large loss in photoconductivity while the fullerene acceptor-containing blend demonstrates a significantly greater fraction of oxygen uptake but retains 55% of the photoconductivity. Finally, this experimental roadmap provides meaningful guidance for future high-throughput, multimodal studies, benchmarking the sensitivity of the different analytical techniques for assessing stability in printable active layers, independent of complete device architectures.

14 SOLAR ENERGY↗

Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors

The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.

36 MATERIALS SCIENCE↗

NASA Tech Briefs, February 2004

Topics include: Simulation Testing of Embedded Flight Software; Improved Indentation Test for Measuring Nonlinear Elasticity; Ultraviolet-Absorption Spectroscopic Biofilm Monitor; Electronic Tongue for Quantitation of Contaminants in Water; Radar for Measuring Soil Moisture Under Vegetation; Modular Wireless Data-Acquisition and Control System; Microwave System for Detecting Ice on Aircraft; Routing Algorithm Exploits Spatial Relations; Two-Finger EKG Method of Detecting Evasive Responses; Updated System-Availability and Resource-Allocation Program; Routines for Computing Pressure Drops in Venturis; Software for Fault-Tolerant Matrix Multiplication; Reproducible Growth of High-Quality Cubic-SiC Layers; Nonlinear Thermoelastic Model for SMAs and SMA Hybrid Composites; Liquid-Crystal Thermosets, a New Generation of High-Performance Liquid-Crystal Polymers; Formulations for Stronger Solid Oxide Fuel-Cell Electrolytes; Simulation of Hazards and Poses for a Rocker-Bogie Rover; Autonomous Formation Flight; Expandable Purge Chambers Would Protect Cryogenic Fittings; Wavy-Planform Helicopter Blades Make Less Noise; Miniature Robotic Spacecraft for Inspecting Other Spacecraft; Miniature Ring-Shaped Peristaltic Pump; Compact Plasma Accelerator; Improved Electrohydraulic Linear Actuators; A Software Architecture for Semiautonomous Robot Control; Fabrication of Channels for Nanobiotechnological Devices; Improved Thin, Flexible Heat Pipes; Miniature Radioisotope Thermoelectric Power Cubes; Permanent Sequestration of Emitted Gases in the Form of Clathrate Hydrates; Electrochemical, H2O2-Boosted Catalytic Oxidation System; Electrokinetic In Situ Treatment of Metal-Contaminated Soil; Pumping Liquid Oxygen by Use of Pulsed Magnetic Fields; Magnetocaloric Pumping of Liquid Oxygen; Tailoring Ion-Thruster Grid Apertures for Greater Efficiency; and Lidar for Guidance of a Spacecraft or Exploratory Robot.

Source record↗

Electron shelving of a superconducting artificial atom

Interfacing long-lived qubits with propagating photons is a fundamental challenge in quantum technology. Cavity and circuit quantum electrodynamics (cQED) architectures rely on an off-resonant cavity, which blocks the qubit emission and enables a quantum non-demolition (QND) dispersive readout. However, no such buffer mode is necessary for controlling a large class of three-level systems that combine a metastable qubit transition with a bright cycling transition, using the electron shelving effect. Here we demonstrate shelving of a circuit atom, fluxonium, placed inside a microwave waveguide. With no cavity modes in the setup, the qubit coherence time exceeds 50 μs, and the cycling transition’s radiative lifetime is under 100 ns. By detecting a homodyne fluorescence signal from the cycling transition, we implement a QND readout of the qubit and account for readout errors using a minimal optical pumping model. Our result establishes a resource-efficient (cavityless) alternative to cQED for controlling superconducting qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗