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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗
NASA NTRS1981

Degradation of a two-layer thermal barrier coating under thermal cycling

A two-layer plasma-sprayed thermal barrier coating on a directionally solidified nickel-base eutectic alloy substrate was characterized prior to and after thermal cycling to 1095 C in an accelerated furnace test. The coating was comprised of an inner layer of Ni-16.4Cr-5.1Al-0.15Y (wt%) bond coat and an outer layer of ZrO2-7.9Y2O3 (wt%) thermal barrier. Characterization of the bond coat revealed that substantial amounts of yttrium and aluminum were oxidized during plasma-spraying in air. The oxidation of these elements reduced the protective capacity of the bond coat so that, on thermal exposure, severe degradation of the bond coat resulted and large amounts of nickel oxide formed. This nickel oxide was demonstrated to grow outward into the thermal barrier, which appears to have increased the stresses in the thermal barrier and contributed to its failure near the thermal barrier-bond coat interface.

Maier, R. D.↗
NASA NTRS1982

Measuring Hydrogen Properties in Aluminum

System in use at Langley Research Center measures concentration and diffusion coefficient of hydrogen in pure aluminum. Principal components are high-temperature ultra-high-vacuum furnace and quadrupole mass spectrometer. Quantities of hydrogen and other gases that evolve from heated metal are measured in real time and correlated with data on aluminum porosity.

Outlaw, R. A.↗
NASA NTRS1982

Reflective-Shield Radiative Cooler

Tests show radiative cooler consisting of several thin reflective shields with a slight angle between them redirects flow of heat very effectively. Shield can be used for deflecting virtually any level of thermal radiation can be deflected by technique; but it may be useful in construction reflecting baffles in front of ovens or furnaces.

Petrick, W.↗
NASA NTRS1982

Separating Silicon From Si/NaF Mixtures

New method of extracting silicon from mixture produced when silicon tetrafluoride is reduced by sodium takes advantage of lower melting point of NaF. Method is effective at temperatures up to 400 degrees C below melting point of Si. Results in energy and economic savings: simpler and smaller furnaces, less volatization loss, and high percentage of separation.

Sanjurjo, A.↗
NASA NTRS1983

Ampoule With Integral Feedthroughs

Bridgman-growth ampoule has molybdenum-to-quartz feedthroughs at both ends. Ampoule is vacuum-tight, protects exposed areas of furnace from corrosive vapors emanating from sample and at same time prevents changes in composition of melt due to preferential vaporization of one of components.

Crouch, R. K.↗
NASA NTRS1983

High Temperature Filler for Tile Gaps

Gaps between ceramic tiles filled with ceramic-coated fabric that withstands temperatures as high as 2,000 degrees F (1,300 degrees C). Reusable high-temperature gap filler is made of fabric coated with ceramic slurry and bonded in place with room-temperature-vulcanized adhesive. Procedure used in kilns and furnaces.

Holt, J. W.↗
NASA NTRS1981

Space processing of electronic materials

The relative values of thermal conductivity of solid and liquid HgCdTe are critically important in the design configuration of the furnaces used for Bridgman crystal growth. The thermal diffusivity of the material is closely linked to the conductivity by the defining relation D = k/rho c, where D is the diffusivity, K is the thermal conductivity, rho is the density, and c is the specific heat. The use of transient and periodic heating approaches to measure the diffusivity are explored. A system for securing and extracting heat from silica or glass tubes under high C vacuum conditions is described.

Workman, G. L.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1980

Transient and diffusion analysis of Hg Cd Te

The solution of the one dimensional planar interface solidification problem is presented. Numerical solutions are applied to experimental solute profiles to determine the effective diffusion constant for Hg Co Te. Progress on the design and construction of a high gradient furnace is reported.

Clayton, J. C.↗
NASA NTRS1981

Development of an all-metal thick film cost effective metallization system for solar cells

The objectives of the investigation were to provide all-metal screenable pastes using economical base metals, suitable for application to low-to-high conductivity silicon of either conductivity type and possibly to aluminum surfaces. Experiments were conducted with variations in paste parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium, intended to provide transport during the carbon fluoride decomposition was incorporated in the paste with promising results.

Ross, B.↗
NASA NTRS1981

Solar heated fluidized bed gasification system

A solar-powered fluidized bed gasification system for gasifying carbonaceous material is presented. The system includes a solar gasifier which is heated by fluidizing gas and steam. Energy to heat the gas and steam is supplied by a high heat capacity refractory honeycomb which surrounds the fluid bed reactor zone. The high heat capacity refractory honeycomb is heated by solar energy focused on the honeycomb by solar concentrator through solar window. The fluid bed reaction zone is also heated directly and uniformly by thermal contact of the high heat capacity ceramic honeycomb with the walls of the fluidized bed reactor. Provisions are also made for recovering and recycling catalysts used in the gasification process. Back-up furnace is provided for start-up procedures and for supplying heat to the fluid bed reaction zone when adequate supplies of solar energy are not available.

Qader, S. A.↗
NASA NTRS1981

Materials science

The first Spacelab space processing payload includes the following categories of hardware: (1) multiuser facilities, (2) common-support equipment, and (3) six autonomous experiments. All the hardware, with the exception of two elements (covering three experiments), will be integrated in a Spacelab double rack called the materials science double rack. The payload experimental facilities are intended to perform, during the first Spacelab mission, a number of significant pilot experiments in the fields of crystal growth, fluid physics and metallurgy, and, at the same time, to flight-verify the materials science hardware items developed (e.g., various furnaces, process chambers, etc.).

Huth, U.↗
NASA NTRS1982

Automated semiconductor vacuum chemical vapor deposition facility

A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.

Source record↗
NASA NTRS1982

Automated semiconductor diffusion and oxidation facility

A semiconductor diffusion and oxidation facility (totally automated) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to track, and sent on to the next process. The entire process was controlled by a computer.

Source record↗
NASA NTRS1981

Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

The process development continued, with a total of nine crystal growth runs. One of these was a 150 kg run of 5 crystals of approximately 30 kg each. Several machine and process problems were corrected and the 150 kg run was as successful as previous long runs on CG2000 RC's. The accelerated recharge and growth will be attempted when the development program resumes at full capacity in FY '82. The automation controls (Automatic Grower Light Computer System) were integrated to the seed dip temperature, shoulder, and diameter sensors on the CG2000 RC development grower. Test growths included four crystals, which were grown by the computer/sensor system from seed dip through tail off. This system will be integrated on the Mod CG2000 grower during the next quarter. The analytical task included the completion and preliminary testing of the gas chromatograph portion of the Furnace Atmosphere Analysis System. The system can detect CO concentrations and will be expanded to oxygen and water analysis in FY '82.

Source record↗
NASA NTRS1980

Low cost Czochralski crystal growing technology. Near implementation of the flat plate photovoltaic cost reduction of the low cost solar array project

Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechanging from another crucible is described. Attempts were made to eliminate the cost of raising the furnace temperature to 250 C above the melting point of silicon by using an RF coil to melt polycrystalline silicon rod as a means of rechanging the crucible. Microprocessor control of the straight growth process was developed and domonstrated for both 4 inch and 6 inch diameter. Both meltdown and melt stabilization processes were achieved using operator prompting through the microprocessor. The use of the RF work coil in poly rod melting as a heat sink in the accelerated growth process was unsuccessful. The total design concept for fabrication and interfacing of the total cold crucible system was completed.

Roberts, E. G.↗
NASA NTRS1981

Development of an all-metal thick-film cost-effective metallization system for solar cells

Screened electrodes made from fluorocarbon activated copper paste and silver fluoride activated copper paste, tape adhesion and scratch tests were studied. Experiments were conducted with variations in past parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium intended to provide transport during the carbon fluoride decomposition, is incorporated in the paste.

Ross, B.↗