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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Design Power Control Strategies of Grid-Forming Inverters for Microgrid Application

This paper develops and compares two control schemes in the application control layer of a non-phase-locked loop (non-PLL) grid-forming (GFM) inverter to gain insight and understanding into how the two schemes affect the dynamic responses of GFM inverters and the transition operation of microgrids. The first scheme adopts power tracking based on an outer current loop in grid-connected mode and droop control in islanded mode, and the second uses droop control in both grid-connected and islanded modes. Analytical study is developed to compare the performance of these two strategies from various aspects, including fundamental differences, transition operation, power tracking, and P-Q capability with low point-of-common-coupling (PCC) voltages. Extensive simulation testing is carried out to validate the control performance of these two control strategies, and the simulation testing confirms the findings of the analytic study. Finally, the second strategy is recommended because of its superior control performance and ease of implementation. The analysis and results are useful in developing reliable control schemes for non-PLL GFM inverters because increasing numbers of inverters will work as non-PLL grid-forming sources in future grids because of their improved stability and reliability.

grid-forming↗
DOE OSTI2022

A method for automated modeling of plasma shape control response in tokamaks

Here, a simple method commonly used in modeling of tokamak conductor and plasma response for plasma control has been extended to allow more general modeling of tokamak PF conductor circuits. This extension combines a previously existing method for integrating plasma response and tokamak circuits with a more capable circuit modeling technique derived from the theory that underlies present-day automatic circuit simulation codes. This combined method can incorporate any combination of inductors (e.g., coils), resistors, capacitors, voltage sources, and current sources, while retaining the same model structure and ease of interpretation as the simple method. For many tokamaks, use of this extended method would not be the preferred approach, but for certain devices or for specialized models of a device, it is useful and occasionally essential. For example, the method has enabled fast and automated modeling of the complicated and daily-changing circuit topology used in the DIII-D tokamak. This automated modeling is essential to the support of controller design for the frequently changing requirements for DIII-D plasmas. It is likely to also find application in the workflows for new device designs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗
NASA NTRS2008

Characterizing ISS Charging Environments with On-Board Ionospheric Plasma Measurements

Charging of the International Space Station (ISS) is dominated by interactions of the biased United States (US) 160 volt solar arrays with the relatively high density, low temperature plasma environment in low Earth orbit. Conducting surfaces on the vehicle structure charge negative relative to the ambient plasma environment because ISS structure is grounded to the negative end of the US solar arrays. Transient charging peaks reaching potentials of some tens of volts negative controlled by photovoltaic array current collection typically occur at orbital sunrise and sunset as well as near orbital noon. In addition, surface potentials across the vehicle structure vary due to an induced v x B (dot) L voltage generated by the high speed motion of the conducting structure across the Earth's magnetic field. Induced voltages in low Earth orbit are typically only approx.0.4 volts/meter but the approx.100 meter scale dimensions of the ISS yield maximum induced potential variations ofapprox.40 volts across the vehicle. Induced voltages are variable due to the orientation of the vehicle structure and orbital velocity vector with respect to the orientation of the Earth's magnetic field along the ISS orbit. In order to address the need to better understand the ISS spacecraft potential and plasma environments, NASA funded development and construction of the Floating Potential Measurement Unit (FPMU) which was deployed on an ISS starboard truss arm in August 2006. The suite of FPMU instruments includes two Langmuir probes, a plasma impedance probe, and a potential probe for use in in-situ monitoring of electron temperatures and densities and the vehicle potential relative to the plasma environment. This presentation will describe the use of the FPMU to better characterize interactions of the ISS with the space environment, changes in ISS charging as the vehicle configuration is modified during ISS construction, and contributions of FPMU vehicle potential and plasma environment measurements to investigations of on-orbit anomalies in ISS systems.

Minow, Jospeh I.↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

A Generic Two-Vector Model Predictive Control for Hybrid Multilevel Converters

In this article, a generic two-vector model predictive control (TV-MPC) strategy is proposed for the hybrid multilevel converters (HMCs). The proposed method selects two optimal voltage vectors among all the vector candidates using a geometric positioning approach to reduce the computational burden, which is a common issue in the existing MPC methods for HMC. Then duty cycles of the two selected vectors are optimized to minimize the current tracking error, such that the current tracking performance can be enhanced compared with the conventional MPC. In addition, the voltages of the floating dc capacitors can be balanced by evaluating all switching sequences that belong to the optimal voltage vectors with optimal duty cycles. Here, the concept of the proposed TV-MPC is generic and applicable for any HMCs. A typical HMC based on active neutral-point-clamped topology is adopted as a case study in this work. Comprehensive simulation and experimental studies are performed on an all silicon-carbide HMC prototype to validate the effectiveness of the proposed control scheme.

42 ENGINEERING↗
NASA NTRS1977

Solid State Remote Power Controllers for high voltage DC distribution systems

Presently, hybrid Remote Power Controllers (RPC's) are in production and prototype units are available for systems utilizing 28VDC, 120VDC, 115VAC/400 Hz and 230VAC/400 Hz. This paper describes RPC development in a new area of application: HVDC distribution systems utilizing 270/300VDC. Two RPC current ratings, 1 amp and 2 amps, were selected for development as they are adequate to control 90% of projected system loads. The various aspects and trade-offs encountered in circuit development are discussed with special focus placed on the circuits that see the duress of the high dc potentials. The comprehensive evaluation tests are summarized which confirmed the RPC compliance with the specification and with system/load compatibility requirements. In addition, present technology status and new applications are summarized.

Billings, W. W.↗
DOE OSTI2026

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium Molybdate salt, sulfurized at 750∘C, and transferred onto p−Si3/SiO2 substrates. At room temperature, threshold voltage (VT) ranged from -35 V to -25 V, with a peak drain current of 1.2μA/μm. As temperature increased above 325K, VT shifted exponentially, and carrier mobility dropped significantly. At 400 K, the gate lost channel control, though gate leakage current remained low. These results are compared with non-salt-based MoS2 growth to assess salt precursor effects.Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/doe-public-access-plan).

Jones, Andrew [ORNL] (ORCID:0009000233849687)↗
NASA NTRS1981

High-frequency high-voltage high-power DC-to-DC converters

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Wilson, T. G.↗
NASA NTRS1981

Seasonal dependence of large-scale Birkeland currents

Seasonal variations of large-scale Birkeland currents are examined in a study of the source mechanisms and the closure of the three-dimensional current systems in the ionosphere. Vector magnetic field data acquired by the TRIAD satellite in the Northern Hemisphere were analyzed for the statistics of single sheet and double sheet Birkeland currents during 555 passes during the summer and 408 passes during the winter. The single sheet currents are observed more frequently in the dayside of the auroral zone, and more often in summer than in winter. The intensities of both the single and double dayside currents are found to be greater in the summer than in the winter by a factor of two, while the intensities of the double sheet Birkeland currents on the nightside do not show a significant difference from summer to winter. Both the single and double sheet currents are found at higher latitudes in the summer than in the winter on the dayside. Results suggest that the Birkeland current intensities are controlled by the ionospheric conductivity in the polar region, and that the currents close via the polar cap when the conductivity there is sufficiently high. It is also concluded that an important source of these currents must be a voltage generator in the magnetosphere.

Fujii, R.↗
NASA NTRS2010

Large-Format AlGaN PIN Photodiode Arrays for UV Images

A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

Aslam, Shahid↗
DOE OSTI2023

Measurement of needle and armature dynamics in a gasoline direct injector by high-speed neutron imaging

In modern spark ignition engines, precise delivery of fuel with gasoline direct injection has become increasingly important in the effort to meet ever stricter efficiency and emissions regulations. Use of multiple small close-coupled injections has become more common in attempt to precisely control fuel distribution in the cylinder, but these strategies are hindered by nonlinear injection effects due to operation in the ballistic region of the solenoid-operated valve and due to armature bounce at the end of injection. Understanding the internal dynamics of the injector is crucial to minimizing and controlling non-linearity and shot-to-shot variation, but the experimental techniques available to date are capable only of tracking the position of either the top of the needle (via laser sensors or by monitoring current and voltage in the solenoid coil) or the bottom of the needle (via transparent nozzles or high-speed x-ray imaging). Furthermore, a complete picture of the axial and radial motion of valve needle has until now remained elusive. In this work, we present high-speed ensemble neutron transmission imaging of an entire 8-hole gasoline direct injector operating at 200 bar, allowing for both visualization and quantification of the actuation dynamics including lift and wobble of the valve ball, oscillation and bending of the valve needle, lift, rocking, and bounce of the armature, compression of the springs, and radial swelling of the solenoid during energization. Because neutrons offer high penetration through the metal injector while also being sensitive to the 1 H nuclei in fuel molecules, it is also possible to simultaneously see the fluid dynamics of the injection process, including filling of the sac volume, emanation of the spray through the nozzle holes and into the downstream gas, and the formation and evolution of fuel films on the tip of the injector and the walls of the spray container.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Transient voltage-reversal in transformers with multiple secondary coils

By using a transformer with multiple secondary coils, a single unipolar power source can drive multiple loads that have different steady-state operating-voltage requirements. We show that, during initial turn-on, a transient voltage that is opposite in sign to the operating voltage can be induced in one or more of the secondary coils. This is because the surging currents in the coils during turn-on produce a strong inductive interaction between all the coils. In a particular secondary coil, the voltage induced by a neighboring secondary can be larger, and opposite in sign to, the voltage directly induced by the primary coil. The effect is transient because, when the secondary circuits reach their steady-state operating currents, they no longer couple inductively to each other. We also show that, during the turn-on period, the voltage induced in a secondary coil can be significantly larger than its steady-state voltage. These transient effects are controlled by the values of the "coil-coupling" parameters, which are functions of the transformer geometry and of the magnetic permeability and electrical resistivity of the materials used. The results are derived from the circuit equations, and verified using PSpice simulations.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

HEMP Testing of Substation Yard Circuit Breaker Control and Protective Relay Circuits

There are concerns about the effects of High-Altitude Electromagnetic Pulses (HEMP) on the electric power grid. Activities to date tested and analyzed vulnerability of digital protective relays (DPRs) used in power substations, but the effect of HEMP on the greater substation environment is not well known. This work establishes a method of testing the vulnerability of circuit breaker control and protective relay circuits to the radiated E1 pulse associated with HEMP based on coupling to the cables in a substation yard. Two DPRs from Schweitzer Engineering Laboratories, Inc. were independently tested. The test setup also included a typical cable in a substation yard with return plane to emulate the ground grid and other ground conductors near the yard cable, cabinetry housing the installed DPRs, station battery and battery charger, terminal block elements, and a breaker simulator to emulate a substation yard configuration. The DPRs were powered from the station battery and the transformer inputs energized with a three-phase source to maintain typical operating conditions during the tests. Vulnerability testing consisted of a conducted E1 pulse injected into the center of the yard cable of the DPR circuits. Current measurements on the yard cable and DPR inputs indicated significant attenuation of the conducted pulse arriving at the control house equipment from the emulated substation yard. This reduction was quantified with respect to the equivalent open-circuit voltage on the yard cable. No equipment damage or undesired operation occurred on the tested circuits for values below 180 kV, which is significantly higher than the anticipated coupling to a substation yard cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

High-Efficiency Modular SiC-based Power-Converter for Flexible-CHP Systems with Stability-Enhanced Grid-Support Functions

This project seeks to develop a modular, scalable MV power converter featuring stability-enhanced grid-support functions for future grid-interface applications in flexible combined heat and power (F-CHP) cogeneration plants, being fully compliant with the IEEE Standard 1547, category B—for operation in local areas with high aggregated distributed energy resource (DER) penetration, and also with the IEEE standard for the specification of microgrid controllers, namely IEEE Std 2030.7, with the goal to enable F-CHP systems for both microgrid and standalone applications. Further, the proposed converter will use a modular circuit topology, the MMC, which is scalable both in voltage and current by interconnecting power-cell building blocks, thus flexibly suiting the needs of F-CHP systems in the 1–20 MWe range. Furthermore, the use of 10 kV SiC MOSFET devices will minimize the number of power-cells needed to operate in 2–13.8 kV MV distribution systems, but more importantly, they will render feasible a power conversion efficiency > 98 %, and a power density > 10 kW/l. This is highly relevant given that these are two key performance metrics that will further increase the value of F-CHP systems by shortening the time required to recover their investment costs.

14 SOLAR ENERGY↗
NASA NTRS1973

The 20 kilovolt rocket borne electron accelerator

The accelerator system is a preprogrammed multi-voltage system capable of operating at a current level of 1/2 ampere at the 20 kilovolt level. The five major functional areas which comprise this system are: (1) Silver zinc battery packs; (2) the electron gun assembly; (3) gun control and opening circuits; (4) the telemetry conditioning section; and (5) the power conversion section.

Harrison, R.↗
NASA NTRS1978

Noise as a tool for evaluating the activation of cathodes

Measurements, at low frequencies, of the shot noise current from space charge limited cathodes always produced results substantially in excess of theoretical predictions. Measuring the ratio (I sub eq)/S yielded a relation (I sub eq)/S = 1.288 V sub k = 1.288 k(T sub k)/e, independent of the operating point of the diode (triode) as long as all parts of the cathode had a full space charge controlled emission. This method was so sensitive as to permit detection of cathode temperature changes by 1 K, thus it allowed a powerful screening method between well and poorly activated cathodes, superior to dip tests and other current-voltage methods.

Kosmahl, H.↗