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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

The gridded back contact and its effect on solar cell performance

The effect of using gridded back contacts on silicon solar cells made with Al baked surface field (BSF) was experimentally investigated and found to result in a significant increase in conversion efficiency due to higher short-circuit current. An increase of 5 to 8% was noted for thin cells while a smaller increase was observed for standard thickness cells. Several possible explanatory mechanisms are suggested and summarized, including stress relief, incomplete BSF formation, improved back surface recombination velocity, and improved optical reflection off the back silicon-air interface.

Giuliano, M.↗
NASA NTRS1981

Simulator spectral characterization using balloon calibrated solar cells with narrow band pass filters

The development and implementation of an instrument for spectral measurement of solar simulators for testing solar cell characteristics is reported. The device was constructed for detecting changes in solar simulator behavior and for comparing simulator spectral irradiance to solar AM0 output. It consists of a standard solar cell equipped with a band pass filter narrow enough so that, when flown on a balloon to sufficient altitude along with sufficient numbers of cells, each equipped with filters of different bandpass ratings, the entire spectral response of the standard cell can be determined. Measured short circuit currents from the balloon flights thus produce cell devices which, when exposed to solar simulator light, have a current which does or does not respond as observed under actual AM0 conditions. Improvements of the filtered cells in terms of finer bandpass filter tuning and measurement of temperature coefficients are indicated.

Goodelle, G. S.↗
NASA NTRS1981

Photovoltaic module hot spot durability design and test methods

As part of the Jet Propulsion Laboratory's Low-Cost Solar Array Project, the susceptibility of fat-plate modules to hot-spot problems is investigated. Hot-spot problems arise in modules when the cells become back-biased and operate in the negative-voltage quadrant, as a result of short-circuit current mismatch, cell cracking or shadowing. The details of a qualification test for determining the capability of modules of surviving field hot-spot problems and typical results of this test are presented. In addition, recommended circuit-design techniques for improving the module and array reliability with respect to hot-spot problems are presented.

Arnett, J. C.↗
NASA NTRS1983

Measuring Diffusion and Recombination in Polycrystalline Silicon

Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.

Zook, J. D.↗
NASA NTRS1983

Electron Beam Could Probe Recombination Centers

Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.

Vonroos, O.↗
NASA NTRS1984

Schottky-Barrier Photocell With Intermediate Metal Layer

Device output and durability increased. Photosensitive GaAs Schottkybarrier device modified by addition of intermediate layer of refractory or alkaline earth metal. Photovoltaic cells and photosensors made with new design put out higher short-circuit currents and better able to withstand rigors of handling and connection to other circuit components.

Alcorn, G. E.↗
NASA NTRS1982

Study of the photovoltaic effect in thin film barium titanate

The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.

Grannemann, W. W.↗
NASA NTRS1982

Computer program for a four-cylinder-Stirling-engine controls simulation

A four cylinder Stirling engine, transient engine simulation computer program is presented. The program is intended for controls analysis. The associated engine model was simplified to shorten computer calculation time. The model includes engine mechanical drive dynamics and vehicle load effects. The computer program also includes subroutines that allow: (1) acceleration of the engine by addition of hydrogen to the system, and (2) braking of the engine by short circuiting of the working spaces. Subroutines to calculate degraded engine performance (e.g., due to piston ring and piston rod leakage) are provided. Input data required to run the program are described and flow charts are provided. The program is modular to allow easy modification of individual routines. Examples of steady state and transient results are presented.

Daniels, C. J.↗
NASA NTRS1982

High speed computerized data acquisition of photovoltaic V-I characteristics

The voltage current (V-I) characteristics of the photovoltaic array were studied under actual environmental conditions. A method of data acquisition was devised that uses a capacitor charge technique to obtain the V-I characteristic and a computerized data system to display, record and process the data. The capacitor charge technique uses an array shorting transistor and a capacitor bank to sweep the array operating voltage and current from short circuit to open circuit in a specified time (approximately 125 ms). The computerized data system is synchronized with this transition and repetitively samples the array voltage and current during the transition and records the ambient conditions. This data is then normalized by the computer to standard conditions (100 mW/sq cm, 28 C) and is available in tabular and graphic form for both the voltage current and voltage power characteristics. The capacitor charge technique is described.

Delombard, R.↗
NASA NTRS1983

Process Research on Polycrystalline Silicon Material (PROPSM)

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Culik, J. S.↗
NASA NTRS1982

O-18 tracer studies of Al2O3 scale formation on NiCrAl alloys

Diffusion processes in Al2O3 scales formed on NiCrAl + Zr alloys were studied by the proton activation technique employing the O-18 isotope as a tracer. The O-18 profiles identified a zone of oxide penetration beneath the external scale. Both this subscale formation and the outer Al2O3 scale thickness were shown by this technique to increase with Zr content in the alloy. Estimated kp's from scale thicknesses were in agreement with gravimetric measurements for various Zr levels. Alternate exposures in O-16 and O-18 revealed that oxygen inward transport was the primary growth mechanism. A qualitative analysis of these O-18 profiles indicated that the oxygen transport was primarily via short-circuit paths, such as grain boundaries.

Reddy, K. P. R.↗
NASA NTRS1982

Performance degradation and cleaning of photovoltaic arrays

NASA tests results from an 18 mo program of cleaning silicone-encapsulated and glass fronted solar cell panels in urban and desert environments to examine the effects of cleaning on module performance are reported. The panels were cleaned on weekly, monthly, quarterly, or semi-annual basis, while other panels of the same construction were not cleaned and served as controls. Commercially-available detergents and city water were employed for the tests, and the measurements were maintained of the modules' continuing short-circuit current output. The decay of the output was determined by least square regression analyses. Performance degradation was noticeably less in glass covered, rather than silicone-encapsulated modules which decayed faster in urban than in desert environments. Lower frequency cleanings are recommended where labor costs are high.

Sheskin, T. J.↗
NASA NTRS1983

Analysis of the interaction of an electron beam with back surface field solar cells

In this paper the short circuit current Isc induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the Isc gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron-hole pair generation.

Von Roos, O.↗
NASA NTRS1983

An EBIC equation for solar cells

When an electron beam of a scanning electron microscope (SEM) impinges on an N-P junction, the generation of electron-hole pairs by impact ionization causes a characteristic short circuit current I(sc) to flow. The I(sc), i.e., EBIC (electron beam induced current) depends strongly on the configuration used to investigate the cell's response. In this paper the case where the plane of the junction is perpendicular to the surface is considered. An EBIC equation amenable to numerical computations is derived as a function of cell thickness, source depth, surface recombination velocity, diffusion length, and distance of the junction to the beam-cell interaction point for a cell with an ohmic contact at its back surface. It is shown that the EBIC equation presented here is more general and easier to use than those previously reported. The effects of source depth, ohmic contact, and diffusion length on the normalized EBIC characteristic are discussed.

Luke, K. L.↗
NASA NTRS1983

Multiwavelength analyzer for the determination of diffusion lengths

The minority carrier diffusion length Ln in the base or substrate region is an important parameter which governs a solar cell's performance. The present investigation is concerned with the development of a multiwavelength analyzer (MWA) technique for the nondestructive spatial testing of polycrystalline solar cells. The MWA method is based on the utilization of the short-circuit current generated by two or more light-emitting diodes (LEDs) operating at different wavelengths and modulated 180 deg out-of-phase. For a determination of Ln by the MWA technique, it is necessary to know the value of the absorption coefficient.

Stafsudd, O. M.↗
NASA NTRS1985

Direct-Current Unbalance Detector

Short circuits to ground indicated by voltage changes. Current transducer connected in bridge circuit with floating 30-Vdc power supply measures voltage unbalance between positive and negative powerlines and ground. Detection circuit output swings higher or lower than normal balanced condition voltage to signify unbalance toward positive or negative side respectively. Circuit configuration adaptable to monitor 4- to 20-mA current loops often found in industrial controls.

Wagner, A. P.↗
NASA NTRS1983

Sputtering phenomena in ion thrusters

Sputtering effects in discharge chambers of ion thrusters are lifetime limiting in basically two ways: (1) ion bombardment of critical thruster components at energies sufficient to cause sputtering removes significant quantities of material; enough to degrade operation through adverse dimensional changes or possibly lead to complete component failure, and (2) metals sputtered from these intensely bombarded components are deposited in other locations as thin films and subsequently flake or peel off; the flakes then lodge elsewhere in the discharge chamber with the possibility of providing conductive paths for short circuiting of thruster components such as the ion optics. This experimental work has concentrated in two areas. The first has been to operate thrusters for multi-hour periods and to observe and measure the films found inside the thruster. The second was to simulate the environment inside the discharge chamber of the thruster by means of a dual ion beam system. Here, films were sputter deposited in the presence of a second low energy bombarding beam to simulate film deposition on thruster interior surfaces that undergo simultaneous sputtering and deposition. Mo presents serious problems for use in a thruster as far as film deposition is concerned. Mo films were found to be in high stress, making them more likely to peel and flake.

Robinson, R. S.↗
NASA NTRS1984

Advanced photovoltaic experiment (S0014)

The advanced photovoltaics-related experiments for investigating a portion of the solar spectrum and the effect of the space environment on photovoltaics. The information will be used to provide correlation between space and ground testing and also to provide for more accurate performance measurement in the laboratory. Specific objectives of these experiments are to provide information on the performance and endurance of advanced and conventional solar cells, to improve reference standards for photovoltaic measurements, and to measure the energy distribution in the extraterrestrial solar spectrum. Data to be obtained will include temperatures and short-circuit current of the samples. Six-point current-voltage (I-V) characteristics will be obtained for selected samples. These data will be recorded once a day during the flight. Orbit data will be correlated with preflight and postflight measurement of the samples.

Bradhorst, H. W., Jr.↗