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We demonstrate an approach to lower desolvation energy and increase rate performance through the introduction of a metal to the silicon surface.
The largest temperature anisotropy in the cosmic microwave background (CMB) is the dipole, which has been measured with increasing accuracy for more than three decades, particularly with the Planck satellite. The simplest interpretation of the dipole is that it is due to our motion with respect to the rest frame of the CMB. Since current CMB experiments infer temperature anisotropies from angular intensity variations, the dipole modulates the temperature anisotropies with the same frequency dependence as the thermal Sunyaev-Zeldovich (tSZ) effect. Here, we present the first, and significant, detection of this signal in the tSZ maps and find that it is consistent with direct measurements of the CMB dipole, as expected. The signal contributes power in the tSZ maps, which is modulated in a quadrupolar pattern, and we estimate its contribution to the tSZ bispectrum, noting that it contributes negligible noise to the bispectrum at relevant scales.
Cubic GaN epitaxy on large-area U-grooved silicon (100) dies is demonstrated by metalorganic chemical vapor deposition, and its structural and optical properties are reported. Scanning electron, atomic force, and transmission electron microscopy studies reveal that cubic GaN shows no discernible threading dislocations and a low stacking fault density of 3.27 ± 0.18 × 10 4 cm –1 . Temperature-dependent photoluminescence studies reveal as-grown cubic GaN band edge emission internal quantum efficiency as 25.6% ± 0.9%. Selective etching of the low-temperature AlN buffer layer, SiO 2 sidewalls, and hexagonal-phase GaN is demonstrated, which increases the cubic GaN band edge emission internal quantum efficiency to 31.6% ± 0.8%. This increase is attributed to the decrease in the radiative recombination lifetime via the removal of defective hexagonal-phase GaN. Altogether, cubic GaN on U-grooved silicon with high structural and optical quality is reported, promising its suitability for next-generation devices.
Radiation-induced property changes in materials originate from the energy transfer from an incoming particle to the existing lattice, displacing atoms. The displaced atoms can cause the formation of extended defects including dislocation loops, voids, or precipitates. The non-equilibrium defects created during damage events determine the extent of these larger defects and are a function of dose rate, material, and temperature. However, these defects are transient and can only be probed indirectly. Herein, we present direct experimental measurements and evidence of irradiated non-equilibrium vacancy formation, where in situ positron annihilation spectroscopy was used to prove the generation of non-equilibrium defects in silicon.
We have noted typographical errors in TABLE V of J. Chem. Phys. 156, 244303 (2022). Specifically, the values of the angles φ HχH for the XH 2 species in both the ( 3 B 1 ) and ( 1 A 1 ) states were incorrectly reported as half of the correct values. Additionally, the values of the same angles for the XH 3 and XH 4 species were reported correctly.
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er 3+ ) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for quantum networks it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. Here, in this work, we demonstrate the optical isolation of single Er 3+ ions in CMOS-compatible titanium dioxide (TiO 2 ) thin films monolithically integrated on a silicon-on-insulator photonics platform. Our results demonstrate an initial step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er 3+ doped thin films.
In this work, we have studied the electron emission from one of the polycyclic aromatic hydrocarbon (PAH) molecules namely, fluorene (C13H10), upon 3.5 MeV/u Si8+ ion impact. The experimentally measured absolute double differential cross sections (DDCS) are compared with the continuum distorted wave-eikonal initial state (CDW-EIS) model and the first Born approximation including correct boundary conditions (CB1). The measurements are carried out in the ejected e⁻-energy range of 1 eV–400 eV and in the angular range of 20°–160°. We have obtained the single differential and the total cross sections (TCSs) of e⁻-emission as well. The CB1 calculation largely underestimates the data. The CDW-EIS model, which is applied for the PAH molecule for the first time, provides an overall better agreement with the double differential, single differential and TCS data. The DDCS data for fluorene has also been compared with that for CH4 molecule, at a few angles. The forward–backward angular asymmetry shows a relatively flatter distribution compared to the theoretical predictions. The contribution due to the giant plasmon resonance could not be clearly observed except a mild indication in the asymmetry parameter. The angular distribution of the carbon KLL Auger electron cross section shows certain variations. The study of the KLL hyper-satellite component indicates the double K-ionization cross section is about 8.6% of the single K-ionization one.
Abstract not provided
Abstract Advances in timing detector technology require new specialized readout electronics. Applications demand below 10 ps time of arrival resolution and low power for a low repetition rate. A possible path to achieve O(10 ps) time resolution is an integrated chip using Silicon Germanium (SiGe) technology. Using DoE SBIR funding, Anadyne, Inc., in collaboration with UC Santa Cruz, has developed a prototype SiGe front-end readout chip optimized for low power and timing resolution. Two versions of the chip were produced with performance in simulation: a more power version with 10 ps resolution at 5 fC with 1.1 mW/channel, and a less power version with 10 ps resolution at 8 fC with 0.6 mW/channel.The chip was produced at Tower Semiconductor with 350 nm technology. The ASIC from the prototype run shows good performance: a rise time of 0.7–1 ns and 25 mV per fC response with RMS noise <1 mV. Simulation and results from the prototype will be reported in this paper.
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Here, we present a combined polarized neutron and x-ray scattering study on two enantiopure langasite single crystals aimed at the determination of their absolute structural and magnetic chiralities and the coupling between them. Our respective data sets unambiguously reveal two samples of opposite structural chirality, where the magnetic handedness is pinned by the structural one. Simple energy considerations of the magnetic exchange and single-ion anisotropy parameters reveal that it is not the Dzyaloshinskii-Moriya interaction but the local single-ion anisotropy on a triangular plaquette which plays a key role in stabilizing one of the two magnetic helices.
Abstract not provided
We present an ab initio study of the thermodynamic properties of cubic CaSiO 3 perovskite (CaPv) over the pressure and temperature range of the Earth's lower mantle. We compute the anharmonic phonon dispersions throughout the Brillouin zone by utilizing the phonon quasiparticle approach, which characterizes the intrinsic temperature dependence of phonon frequencies and, in principle, captures full anharmonicity. Such temperature-dependent phonon dispersions are used to calculate ab initio free energy in the thermodynamic limit (N → ∞) within the framework of the phonon gas model. Accurate free energy calculations enable us to investigate cubic CaPv's thermodynamic properties, e.g., thermal expansivity, Grüneisen parameter, bulk modulus, heat capacity and thermal equation of state, where anharmonic effects are demonstrated. Furthermore, the present methodology provides an important theoretical approach for exploring phase boundaries, thermodynamic, and thermoelastic properties of strongly anharmonic materials at high pressures and temperatures.
Lattice thermal conductivity (κ lat ) of MgSiO 3 postperovskite (MgPPv) under the Earth's lower mantle high pressure-temperature conditions is studied using the phonon quasiparticle approach by combing ab initio molecular dynamics and lattice dynamics simulations. Phonon lifetimes are extracted from the phonon quasiparticle calculations, and the phonon group velocities are computed from the anharmonic phonon dispersions, which, in principle, capture full anharmonicity. Here, it is found that throughout the lowermost mantle, including the D” region, κ lat of MgPPv is ~25% larger than that of MgSiO 3 perovskite (MgPv), mainly due to MgPPv's higher phonon velocities. Such a difference in phonon velocities between the two phases originates in the MgPPv's relatively smaller primitive cell. Systematic results of temperature and pressure dependences of both MgPPv's and MgPv's κ lat are demonstrated.
X-ray photon correlation spectroscopy (XPCS) is used to investigate the fluctuation dynamics during self- organized nanopatterning of silicon by Ar + bombardment at 65° polar angle. Rich structure is observed in the development of the correlation dynamics as seen in the evolving correlation time τ(q || ) and fluctuation relaxation exponent n(q || ). Furthermore, on length scales of the ripple structure, local structure becomes ever more long lived as coarsening progresses. In addition, τ (q || ) develops a peak on length scales corresponding to the ripple wavelength. As patterning progresses, correlation times become asymmetric between the positive and negative directions, suggesting the possibility of different dynamics on the slopes facing toward and away from the ion beam. Relaxation exponents show evolution from linear dynamics at early times to compressed exponential relaxation at low wave numbers and stretched exponential relaxation at high wave numbers. Compressed exponential behavior is reminiscent of stress relaxation processes observed in glasses.
Understanding the self-organized ion beam nanopatterning of elemental semiconductors, particularly silicon, is of intrinsic scientific and technological interest. This is the second component of a two-part coherent x-ray scattering and x-ray photon correlation spectroscopy (XPCS) investigation of the kinetics and fluctuation dynamics of nanoscale ripple development on silicon during 1 keV Ar + (part I) and Kr + bombardment at 65° polar angle. Here it is found that the ion-enhanced viscous flow relaxation is essentially equal for Kr + -induced patterning as previously found for Ar + patterning despite the difference in ion masses. However, the magnitude of the surface curvature-dependent roughening rate in the early-stage kinetics is larger for Kr + than for Ar + , consistent with expectations that the heavier ion gives an increased mass redistributive contribution to the initial surface instability. As with the Ar + case, fluctuation dynamics in the late stage show a peak in correlation times at the length scale corresponding to the dominant structural feature on the surface—the ripples. Finally, it is shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity. This allows the direction and speed of ripple motion to be measured in a real time experiment. In the present case, ripple motion is found to be into the projected direction of the ion source, in contrast to expectations from an existing sputter erosion driven model with parameters derived from binary collision approximation simulations.
CaCo 2–y As 2 is an unusual itinerant magnet with signatures of extreme magnetic frustration. The conditions for establishing magnetic order in such itinerant frustrated magnets, either by reducing frustration or increasing electronic correlations, is an open question. Here, we use results from inelastic neutron scattering and magnetic susceptibility measurements and density functional theory calculations to show that hole doping in Ca(Co 1–x Fe x ) 2–y As 2 suppresses magnetic order by quenching the magnetic moment while maintaining the same level of magnetic frustration. In this work, the suppression is due to tuning the Fermi energy away from a peak in the electronic density of states originating from a flat conduction band. This results in the complete elimination of the magnetic moment by $\textit{x}$ ≈ 0.25, providing a clear example of a Stoner-type transition.