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At least 757 records · Page 42

The enhanced photocurrent of epitaxial BiFeO{sub 3} film at 130 °C

The short-circuit photocurrent (I{sub SC}) that can be reversed by polarization switch enhances with temperature increasing to 130 °C in the epitaxial BiFeO{sub 3} thin film on SrTiO{sub 3} substrate. The La{sub 2/3}Sr{sub 1/3}MnO{sub 3}/BiFeO{sub 3}/indium tin oxide (In{sub 2}O{sub 3}:SnO{sub 2} = 9:1) junction shows the current rectifying characteristic and the photovoltaic effect at 20–130 °C. Importantly, the I{sub SC} can be reversed by the polarization switch in this temperature range. More charge carriers are activated and the density of free electrons enhances with the increase in the temperature, which results in the decrease in the depletion layer width. As a result, the open-circuit voltage decreases 50% and the I{sub SC} increases from 180 nA to 404 nA with the increase in the temperature from 20 °C to 130 °C. This suggests that the corresponding sensors and devices can be used at a relatively high temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Properties and features of structure formation CuCr-contact alloys in electron beam cladding

The microstructure and properties of the contact CuCr alloy produced by electron-beam cladding have been investigated. The effect of the electron beam cladding parameters and preheating temperature of the base metal on the structure and the properties of the coatings has been determined. The bimodal structure of the cladding coating has been established. The short circuit currents tests have been carried out according to the Weil-Dobke synthetic circuit simulating procedure developed for vacuum circuit breakers (VCB) test in real electric circuits. Test results have shown that the electron beam cladding (EBC) contact material has better breaking capacity than that of commercially fabricated sintered contact material. The application of the technology of electron beam cladding for production of contact material would significantly improve specific characteristics and reliability of vacuum switching equipment.

36 MATERIALS SCIENCE↗

Real-time Implementation of a Dual-Active-Bridge Based Multi-Level Photovoltaic Converter

Silicon-carbide based, multi-level converters with dual-active-bridge (DAB) are getting attention for medium voltage, direct grid-connected, utility-scale photovoltaic (PV) applications due to their higher efficiency and power density. To de-risk complex control development for these high-voltage and high-power inverters, hardware-in-the-loop techniques are often required. Due to the high switching frequency and the large number of power electronic switches, off-the-shelf, real-time simulation tools are not yet fully developed for this application, even with FPGA-based simulators. To address this, a new co-simulation approach in FPGA is presented that utilizes Time-Stamped Bridge (TSB) for the higher frequency converters along with detailed fixed conductance based discrete device simulation of the rest of the circuit. A complex DAB-based PV converter with maximum switching frequency of 50 kHz is successfully simulated in real-time in the FPGA and the results are compared with offline simulation results. A controller hardware-in-the-loop (CHIL) platform is developed to demonstrate real-time, closed-loop test results for this DAB-based PV converter.

Dong, Zerui↗

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Temperature control system with a pulse width modulated bridge

A temperature control system, which includes a modified wheatstone bridge with a resistive-capacitive (RC) circuit in one leg of the bridge, is disclosed. The RC circuit includes a resistor which provides an effective resistance as a function of its absolute resistance and the on-time to off-time ratio of pulses supplied to a switch connected across it. A sawtooth voltage is produced across the RC circuit. The voltage is compared with the voltage across a temperature sensor with heat being applied during each pulse period portion when the sawtooth voltage exceeds the voltage across the temperature sensor.

Heyser, R. C.↗

Electronic inverter assembly

A first driver portion comprises a set of first components mounted on or associated with a first circuit board. A second circuit board is spaced apart from the first circuit board. A second driver portion comprises a set of second components mounted on or associated with the second circuit board, where the first driver portion and the second driver portion collectively are adapted to provide input signals to the control terminal of each semiconductor switch of an inverter. A first edge connector is mounted on the first circuit board. A second edge connector is mounted on the second circuit board. An interface board has mating edges that mate with the first edge connector and the second edge connector.

42 ENGINEERING↗

Localized Conduction Channels in Memristors

Since the early 2000s, the impending end of Moore’s scaling, as the physical limits to shrinking transistors have been approached, has fueled interest in improving the functionality and efficiency of integrated circuits by employing memristors or two-terminal resistive switches. Formation (or avoidance) of localized conducting channels in many memristors, often called “filaments”, has been established as the basis for their operation. While we understand some qualitative aspects of the physical and thermodynamic origins of conduction localization, there are not yet quantitative models that allow us to predict when they will form or how large they will be. Here, in this work, we compile observations and explanations of channel formation that have appeared in the literature since the 1930s, show how many of these seemingly unrelated pieces fit together, and outline what is needed to complete the puzzle. This understanding will be a necessary predictive component for the design and fabrication of post-Moore’s-era electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

IceNet for FireBox - A Berkeley Warehouse-Scale Computer

Berkeley’s FireBox is a next-generation warehouse-scale computer (WSC) that utilizes the energy-efficiency and bandwidth density of integrated silicon-photonic interconnects to enable a new high-bandwidth and low-latency network fabric connecting thousands of compute nodes to petabytes of DRAM and Flash storage. The high bandwidth, low latency and high connectivity of FireBox’s WSC network fabric (IceNet) will enable dramatic improvements in the overall system energy efficiency enabling fine-grain power control on system resources (processors, links and memory/storage components). IceNet is a special 3-stage photonic Clos network architected to achieve ultra-low-latency connectivity between processor nodes and memory, drastically cutting down on the energy wasted in resource idling (processors and memory stalled due to pending network requests). This is achieved by integration of the first and last switch stages into processor/memory hub clients and by heavy over-provisioning of the high-radix middle switches (FlareSwitches). A key hardware component developed in this program is an active laser power management photonic integrated circuits called LightSpark. It interacts with the FlareSwitch and provides laser power to a subset of occupied switch ports, increasing the utilization of laser light in the photonic network by an order of magnitude. In addition to guiding the laser power where it is needed, the laser-power management module enables both wavelength and laser redundancy, significantly increasing the robustness of the system. The goal of the IceNet fabric is to enable communication between 1000s of processor nodes and PBs of memory/storage with <100ns latency, <10pJ/b wall-plug energy cost at multiple Pb/s of available connectivity bandwidth. These metrics represent two-orders of magnitude improvement with respect to the status of current data-center technology.

42 ENGINEERING↗

Failure Detector for Power-Factor Controller

New protective circuits have been developed for power-factor ac motor controllers. Circuits prevent direct current and consequent motor heating that would normally result from failure of solid-state switch in controller. Single-phase power-factor controller with short detector compensates for short-circuit failure in either direction by applying full power to motor. Controller with open detector compensates for open-circuit failure in either direction by turning off power to motor.

Nola, F. J.↗

Dichotomous noise models of gene switches

Molecular noise in gene regulatory networks has two intrinsic components, one part being due to fluctuations caused by the birth and death of protein or mRNA molecules which are often present in small numbers and the other part arising from gene state switching, a single molecule event. Stochastic dynamics of gene regulatory circuits appears to be largely responsible for bifurcations into a set of multi-attractor states that encode different cell phenotypes. The interplay of dichotomous single molecule gene noise with the nonlinear architecture of genetic networks generates rich and complex phenomena. In this paper, we elaborate on an approximate framework that leads to simple hybrid multi-scale schemes well suited for the quantitative exploration of the steady state properties of large-scale cellular genetic circuits. Through a path sum based analysis of trajectory statistics, we elucidate the connection of these hybrid schemes to the underlying master equation and provide a rigorous justification for using dichotomous noise based models to study genetic networks. Numerical simulations of circuit models reveal that the contribution of the genetic noise of single molecule origin to the total noise is significant for a wide range of kinetic regimes.

60 APPLIED LIFE SCIENCES↗

Electrically Controlled Logical Switch Based on a Step Yttrium–Iron Garnet Waveguide and a Piezoelectric Actuator

We have demonstrated the possibility of functioning a device based on a spin-wave waveguide containing two channels with different ferrite film thicknesses as a logical switch. For switching states, we have used the dependence of interference type (constructive or destructive) at the output converter common for two channels on the waveguide strain under action of the electrically controlled actuator.

30 DIRECT ENERGY CONVERSION↗

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Heater control circuit provides both fast and proportional control

Proportional control circuit supplies a heater with full current, from a pulsating dc source, to a present temperature and then switches to proportional control for fine temperature regulation. Two resistors and a diode are added to the existing circuit. The circuit can be adapted to control other functions.

Baslock, R. W.↗

Efficient/reliable dc-to-dc inverter circuit

Feedback loop, which contains an inductor in series with a saturable reactor, is added to a standard inverter circuit to permit the inverter power transistors to be switched in a controlled and efficient manner. This inverter is applicable where the power source has either high or low impedance properties.

Pasciutti, E. R.↗

Experimental studies and applications of vanadium oxides.

The electrical and electrochemical properties of V-5 and V-7 vanadium oxides were investigated. The effects of pressure, temperature and moisture on the bulk resistivity of the oxides in powder, sintered, and crystalline form were determined, and the static and dynamic volt-ampere characteristics were obtained. Sintered samples tested showed better electrical stability than the compressed powder samples. Two types of commercially available vanadium pentoxide were heat-treated to obtain various crystalline oxide forms which were mounted on alumina substrates and terminated by thick-film conductors for making electrical connections. Indications are that these materials could have applications as sensors, critical-temperature resistors, high-speed switches, and temperature-compensation elements in hybrid microelectronic circuits.

Williams, L., Jr.↗

Dual measurement ablation sensor

A dual measurement ablation sensor for measuring both char-interface and surface recession at a point in an ablating material is described. The sensor permits measurement of the thickness of the char layer. Char-interface recession is indicated by a drop in the resistance to a current passed through the ablation material. Surface recession is indicated by the closing of an electrical circuit when melting causes the release of a spring switch.

Gurtler, C. A.↗