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At least 739 records · Page 41

Development of chip passivated monolithic complementary MISFET circuits with beam leads

The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.

Ragonese, L. J.↗

Monolithic four-quadrant multiplier

Integrated configuration for "differential" sequential processor is less susceptible to noise than one using discrete components. Accuracy of version is unaffected by sample-and-hold (S/H) acquisition speed, S/H droop rate, and stray pickup by separate card-mounted parts.

Lampe, D. R.↗

Surface acoustic waves/silicon monolithic sensor processor

Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

Kowel, S. T.↗

Infrared-Responsive Monolithic MOS Circuit

Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.

Jhabvala, Muzban D.↗

A monolithic lead sulfide-silicon MOS integrated-circuit structure

A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

Jhabvala, M. D.↗

Control of mutual phase locking of monolithically integrated semiconductor lasers

The degree of phase locking between the individual laser apertures is the major issue in phase-locked laser arrays. A description is presented of a series of experiments in which the mutual coherence of two laser apertures is characterized by measuring the visibility of the far-field interference fringes. Attention is given to an approach which makes it possible to control continuously the degree of coherence by means of a separate contact configuration. An investigation was conducted of the far-field radiation patterns of pairs of lasers obtained under various conditions. The results of the present study demonstrate the feasibility of controlling the mutual phase locking between semiconductor lasers by varying the gain distribution between their pumped stripes.

Kapon, E.↗

Surface acoustic wave/silicon monolithic sensor/processor

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Kowel, S. T.↗

Monolithic silicon bolometers

A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

Downey, P. M.↗

Configuration study for a 30 GHz monolithic receive array, volume 1

Gregorian, Cassegrain, and single reflector systems were analyzed in configuration studies for communications satellite receive antennas. Parametric design and performance curves were generated. A preliminary design of each reflector/feed system was derived including radiating elements, beam-former network, beamsteering system, and MMIC module architecture. Performance estimates and component requirements were developed for each design. A recommended design was selected for both the scanning beam and the fixed beam case. Detailed design and performance analysis results are presented for the selected Cassegrain configurations. The final design point is characterized in detail and performance measures evaluated in terms of gain, sidelobe level, noise figure, carrier-to-interference ratio, prime power, and beamsteering. The effects of mutual coupling and excitation errors (including phase and amplitude quantization errors) are evaluated. Mechanical assembly drawings are given for the final design point. Thermal design requirements are addressed in the mechanical design.

Nester, W. H.↗

Monolithic, unidirectional single-mode Nd:YAG ring laser

A new solid-state laser has been designed which achieves high single-mode output power by using a unidirectional nonplanar resonator constructed from a single Nd:YAG crystal. When placed in a magnetic field, the laser provides a pump-limited, single-axial-mode output of 163 mW at 1064 nm. The laser has been specifically developed as an oscillator for a long-range coherent Doppler anemometer. Other applications include coherent communications, coherent optical radar, and inertial rotation sensing.

Kane, T. J.↗

Monolithic Isolated Single-Mode Ring Laser

MISER uses four-sided ring to lase nonreciprocally. Laser concept provides very-compact, efficient, and stable source of coherent radiation. Lasers of single, very-stable frequency desirable for number of purposes. Frequency stability makes possible coherent detection of laser radiation with low-bandwidth detector, useful for communications. Allows very-high-resolution spectroscopy. Any application where desired to use laser in way microwaves used traditionally enhanced if frequency very stable.

Kane, T. J.↗

Progress Toward Monolithic Peritectic Solidification

Reducing convection during plane-front, two-phase peritectic solidification reduces banding. Experiments show reducing radial thermal gradients and flattening solidification interface reduces compositional banding associated with plane-front, two-phase peritectic solidification. Possibility of coupled two-phase peritectic composite solidification still exists. Previously thought banding was inevitable.

Larson, David J., Jr.↗

APS-Workshop on Characterization of MMIC (Monolithic Microwave Integrated Circuit) Devices for Array Antenna

The IEEE AP-S ADCOM is attempting to expand its educational, tutorial and information exchange activities as a further benefit to all members. To this end, ADCOM will be forming specialized workshops on topics of interest to its members. The first such workshop on Characterization and Packaging of MMIC Devices for Array Antennas was conceived. The workshop took place on June 13, 1986 as part of the 1986 International Symposium sponsored by IEEE AP-S and URSI in Philadelphia, PA, June 9-13, 1986. The workshop was formed to foster the interchange of ideas among MMIC device users and to provide a forum to collect and focus information among engineers experienced and interested in the topic. After brief presentations by the panelists and comments from attendees on several subtopics, the group was divided into working committees. Each committee evaluated and made recommendations on one of the subtopics.

Smetana, Jerry↗

Monolithic Microwave Switching Matrix

Gallium arsenide integrated-circuit chip switches any of three microwave input signals to any of three output ports. Measuring 4.9 mm on side, chip contains nine field-effect transistor (FET) crosspoint switches. Housed in custom-designed package with standard connectors for easy integration into system. FET's on chip operated as passive switches and consume no static power and insignificant amounts of switching power. Chip module cascades with similar modules into large arrays handling as many as 100 inputs and 100 outputs. Applications include switching and routing vast amounts of data between computers at extremely high speed. On communications satellite, chip switches microwave signals to and from Earth stations and other satellites.

Fujikawa, Gene↗

Universal test fixture for monolithic mm-wave integrated circuits calibrated with an augmented TRD algorithm

The design and evaluation of a novel fixturing technique for characterizing millimeter wave solid state devices is presented. The technique utilizes a cosine-tapered ridge guide fixture and a one-tier de-embedding procedure to produce accurate and repeatable device level data. Advanced features of this technique include nondestructive testing, full waveguide bandwidth operation, universality of application, and rapid, yet repeatable, chip-level characterization. In addition, only one set of calibration standards is required regardless of the device geometry.

Romanofsky, Robert R.↗

Monolithic GaAs digitizer for space-based laser pulse spreading effect

A 6-bit 1-GHz digitizer was designed to analyze the 1-ns pulse spreading effects in a space based altimeter. The digitizer consisted of four 4-bit flash A/D converters and a 6-bit encoder. Also, the converter utilized four 4-bit converters and a 4-to-6 bit encoder to achieve 6 bit resolution at the 1 GHz sample rate. The design was unique because it utilized only the inverters and NOR gates for the converters and encoder, hence it could be fabricated using the existing state-of-the-art GaAs processing techniques. This GHz digitizer has many commercial applications. It could be applicable to: (1) digital microwave transmission system for the telecommunication industries, (2) pulse monitoring in high kinetic chemical reactions, (3) transient signals in the medical field, and (4) microwave signals in astronomy.

Lao, Bennig↗

Monolithic Unidirectional Nonplanar Ring Laser

New design has six reflecting surfaces. Differential loss required to achieve unidirectional oscillation 100 times as great as with four reflecting surfaces. Concept provides for narrow-linewidth operation in relatively inexpensive Nd:glass. Potential applications in metrology and spectroscopy.

Nilsson, Alan C.↗