NASA NTRS · 19830000497
Infrared-Responsive Monolithic MOS Circuit
Abstract
Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.
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Jhabvala, Muzban D., Dargo, David R., Lyons, John C.. 1984-11-01. Infrared-Responsive Monolithic MOS Circuit. https://ntrs.nasa.gov/citations/19830000497
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