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At least 739 records · Page 41

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NASA NTRS1982

Bolometer and photosensitive detector systems for IR

In order to achieve the full sensitivity required for future space astronomy applications, IR detector systems will have to be cooled to 0.1 K or less. The feasibility of such cryocooling has been demonstrated for the established laboratory technique of adiabatic demagnetization, and it has been shown that bolometers made from compensated silicon, with ion-implanted contacts, come close to calculated ultimate performance limits. Unlike bolometers, silicon and germanium photoconductors are highly wavelength-dependent. Useful wavelengths are presented for the most promising photodetectors based on these materials. It is noted that, as the relevant microelectronic technology advances, array detectors in the near-IR may be expected to approach the size and performance of large, intrinsic silicon CCD arrays now available for optical wavelengths.

Low, F. J.↗

NASA NTRS1982

Test chips for custom ICs - Six kinds of test structures

Microelectronic test chips contain a number of test structures that are used for a variety of purposes in fabricating integrated circuits. For convenience, their use is divided into six groups: layout-rule evaluating, process-parameter extraction, device-parameter extraction, circuit-parameter extraction, initial-fabrication failure analysis, and reliability failure analysis. A given test structure can be used to gather information in a number of these groups. Examples are given here of the kinds of parameters that can be obtained in each of these groups. A table is included summarizing various device failures common to bulk CMOS and indicating failure mechanisms appearing after wafer fabrication and after stress.

Buehler, M. G.↗

NASA NTRS1984

The Strength of the Metal. Aluminum Oxide Interface

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Pepper, S. V.↗

NASA NTRS1981

Development of a qualification standard for adhesives used in hybrid microcircuits

Improved qualification standards and test procedures for adhesives used in microelectronic packaging are developed. The test methods in specification for the Selection and Use of Organic Adhesives in Hybrid Microcircuits are reevaluated versus industry and government requirements. Four electrically insulative and four electrically conductive adhesives used in the assembly of hybrid microcircuits are selected to evaluate the proposed revised test methods. An estimate of the cost to perform qualification testing of an adhesive to the requirements of the revised specification is also prepared.

Licari, J. J.↗

NASA NTRS1984

Aeronautics for the 21st century

An assessment is made of the development possibilities of aerospace vehicle materials and structures, propulsion, avionics, configurations, computerized simulation, and operational capabilities. The supersonic transports envisioned for the 21st century would incorporate advanced, high temperature material structural design techniques, and a variable-cycle engine technology capable of a 40 percent increase in cruise efficiency over current systems, combined with low takeoff noise and efficient subsonic operation. This technology, as well as that of tilt-rotor VTOL aircraft which will be able to cruise at speeds comparable to those of present fixed-wing aircraft, are directly applicable to military systems. The impact of microelectronics and computer technologies on both avionics and the computational simulation of three-dimensional aerodynamic characteristics are also noted as important prospective developments.

Beggs, J. M.↗

NASA NTRS1982

Human factors technology for America's space program

NASA is initiating a space human factors research and technology development program in October 1982. The impetus for this program stems from: the frequent and economical access to space provided by the Shuttle, the advances in control and display hardware/software made possible through the recent explosion in microelectronics technology, heightened interest in a space station, heightened interest by the military in space operations, and the fact that the technology for long duration stay times for man in space has received relatively little attention since the Apollo and Skylab missions. The rationale for and issues in the five thrusts of the new program are described. The main thrusts are: basic methodology, crew station design, ground control/operations, teleoperations and extra vehicular activity.

Montemerlo, M. D.↗

NASA NTRS1979

Facility safety study

The safety of NASA's in house microelectronics facility is addressed. Industrial health standards, facility emission control requirements, operation and safety checklists, and the disposal of epitaxial vent gas are considered.

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NASA NTRS1984

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

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NASA NTRS1985

High-voltage solar-cell chip

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Kapoor, V. J.↗

NASA NTRS1985

The science of computing - Parallel computation

Although parallel computation architectures have been known for computers since the 1920s, it was only in the 1970s that microelectronic components technologies advanced to the point where it became feasible to incorporate multiple processors in one machine. Concommitantly, the development of algorithms for parallel processing also lagged due to hardware limitations. The speed of computing with solid-state chips is limited by gate switching delays. The physical limit implies that a 1 Gflop operational speed is the maximum for sequential processors. A computer recently introduced features a 'hypercube' architecture with 128 processors connected in networks at 5, 6 or 7 points per grid, depending on the design choice. Its computing speed rivals that of supercomputers, but at a fraction of the cost. The added speed with less hardware is due to parallel processing, which utilizes algorithms representing different parts of an equation that can be broken into simpler statements and processed simultaneously. Present, highly developed computer languages like FORTRAN, PASCAL, COBOL, etc., rely on sequential instructions. Thus, increased emphasis will now be directed at parallel processing algorithms to exploit the new architectures.

Denning, P. J.↗

NASA NTRS1986

Crack Growth in Single-Crystal Silicon

Report describes experiments on crack growth in single-crystal silicon at room temperature in air. Crack growth in (111) cleavage plane of wafers, 50 by 100 by 0.76 mm in dimension, cut from Czochralski singlecrystal silicon studied by double-torsion load-relaxation method and by acoustic-emission measurements. Scanning electron microscopy and X-ray topography also employed. Results aid in design and fabrication of silicon photovoltaic and microelectronic devices.

Chen, C. P.↗

NASA NTRS1986

Thermally-Activated Metal-to-Glass Bonding

Hermetic seals formed easily by use of metallo-organic film. Metallo-organic film thermally bonded to glass and soldered or welded to form hermetic seal. Film applied as ink consisting of silver neodecanoate in xylene. Relative amounts of ingredients selected to obtain desired viscosity. Material applied by printing or even by scribing with pen. Sealing technique useful in making solar-cell modules, microelectronic packages, and other hermetic silicon devices.

Gallagher, B. D.↗

NASA NTRS1986

Depositing Diamondlike Carbon Films

New process demonstrated to make thin films (usually thousands of angstroms to few microns thick) that have properties of diamonds. Various plasma and ion-beam techniques employed to generate films. Films made by radio-frequency plasma decomposition of hydrocarbon gas or other alkanes, by low-energy carbon-ion-beam deposition, or by ion plating and dual ion technique using carbon target. Advantages of new process over others are films produced, though amorphous, are clear, extremely hard, chemically inert, of high resistivity, and have index of refraction of 3.2 properties similar to those of single-crystal diamonds. Films have possible uses in microelectronic applications, high-energy-laser and plastic windows, corrosion protection for metals, and other applications where desired properties of film shaped during the film-formation process.

Mirtich, M. J.↗

NASA NTRS1986

Sulfone/Ester Polymers Containing Pendent Ethynyl Groups

Two processes make high-performance polymers resistant to solvents, without compromising mechanical characteristics. Polymers show improved solvent resistance while retaining high toughness, thermoformability, and mechanical performance. Multistep process involves conversion of pendent bromo group to ethynyl group, while direct process involves reacting hydroxy-terminated sulfone oligomers or polymers with stoichiometric amount of 5-(4-ethynylphenoxy) isophthaloyl chloride. Applications for new polymers include adhesives, composite resin matrices, moldings, ultrafiltration membranes, protective coatings, and such electrical insulators as thin films for microelectronic circuitry.

Hergenrother, P. M.↗

NASA NTRS1984

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

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NASA NTRS1985

Accelerators for critical experiments involving single-particle upset in solid-state microcircuits

Charged-particle interactions in microelectronic circuit chips (integrated circuits) present a particularly insidious problem for solid-state electronic systems due to the generation of soft errors or single-particle event upset (SEU) by either cosmic rays or other radiation sources. Particle accelerators are used to provide both light and heavy ions in order to assess the propensity of integrated circuit chips for SEU. Critical aspects of this assessment involve the ability to analytically model SEU for the prediction of error rates in known radiation environments. In order to accurately model SEU, the measurement and prediction of energy deposition in the form of an electron-hole plasma generated along an ion track is of paramount importance. This requires the use of accelerators which allow for ease in both energy control (change of energy) and change of ion species. This and other aspects of ion-beam control and diagnostics (e.g., uniformity and flux) are of critical concern for the experimental verification of theoretical SEU models.

Zoutendyk, J. A.↗

NASA NTRS1986

Space Station technology experiments and uses

The use of the proposed Space Station for technological experimentation is discussed. The general objectives and capabilities of the Station and the status of planning are reviewed; the external and internal environmental conditions at the 500-km 28.5-deg-inclination Station orbit are described; and six conceptual Technology Development Missions designed by NASA and included in the Mission Requirements Data Base are briefly characterized and illustrated with drawings. The missions considered concern spacecraft-materials performance, solar dynamic power, data transfer and processing microelectronics, long-term cryogenic-fluid storage, active-optics technology, and cryogenic-propellant transfer, storage, and reliquefaction.

Breckenridge, R. A.↗

NASA NTRS1986

Diamondlike carbon films on semiconductors for insulated-gate technology

MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.

Kapoor, V. J.↗