Diodes in silicon carbide by ion implantation
N-type layer formation with ion implanted nitrogen or Sb in p-type alpha-SiC, evaluating electrical characteristics, discussing junction devices formed
Dunlap, H. L.↗
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Anneal behavior of defects in ion-implanted GaAs diodes
Ion-implanted GaAs junction diodes anneal behavior and defect nature
Hunsperger, R. G.↗
Miniature implantable sonomicrometer system
Heart dimension measurement by miniature implantable ultrasonic sonomicrometer, describing system design and operation
Lee, R. D.↗
Miniature implantable instrument measures and transmits heart function data
Heart diameter is derived from measured transit time of 2.25 MHz ultrasonic pulse between two piezoelectric crystals attached to diametrically opposite heart surfaces. Miniature instrument implanted in chest telemeters information to external receiver-converter. System permits continual dimensional data recording taken from awake animals during long-term experiments.
Lee, R. D.↗
Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices
Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.
Source record↗
RF-controlled implantable solid state switch
Miniature, totally implantable, solid state RF-controlled switching circuit for biotelemetry systems consumes zero power in off condition and turns on or off by pulse of RF energy. Switch, the size of small coin, is reducible by integrated circuit techniques.
Fryer, T. B.↗
Telemeter adaptable for implanting in an animal Patent
Biotelemetry apparatus with dual voltage generators for implanting in animals
Fryer, T. B.↗
Development of ion implantation techniques for microelectronics
Ion implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
Dunlap, H.↗
Study of conduction of metallic layers implanted in amorphous layers
Electrical properties of metallic layers implanted in amorphous oxide glass
Donovan, R. P.↗
Implantable biotelemetry systems
Design criteria for implantable biotelemetry systems, discussing RF signal transmission through conductive body tissue
Fryer, T. B.↗
Ion implantation damage effects in silicon
Ion implantation lattice damage effects in crystalline silicon with allowance for optical reflectivity, considering annealing temperature and amorphous layer formation
Eberle, D. E.↗
Cardiovascular telemetry implants
Cardiovascular telemetry total implants, describing measurement problems, equipment design, low current operation, size and thermal and temporal stability
Rader, R. D.↗
Implanted telemeter for electrocardiogram and body temperature
Measuring system requiring one blocking oscillator to generate modulated pulse repetition rate is implantable in the bodies of small animals. Device has life of two years and transmission range of about three feet. EKG sensing unit also is used to sense electromyogram or electrooculogram of laboratory animals.
Barrows, W. F.↗
Implantable drug therapy device: A concept
Design is described of small, rechargeable, implantable infusor which contains fluid medicament stored under pressure and which dispenses fluid continuously through catheter. Body of infusor is covered by pliable silicone rubber sheath attached to suture pad for securing device.
Feldstein, C.↗
Applicability of implantable telemetry systems in cardiovascular research.
This paper briefly describes the results of an experimental program undertaken to develop and apply implanted telemetry to cardiovascular research. Because of the role the kidney may play in essential hypertension, emphasis is placed on telemetry's applicability in the study of renal physiology. Consequently, the relationship between pressure, flow, and hydraulic impedance are stressed. Results of an exercise study are given.
Krutz, R. W.↗
Mg and Be ion implanted GaAs.
Description of methods for generating desired Be and Mg ions and producing the electrical properties of p-type layers by implanting these ions in GaAs substrates. It is shown that the p-type layers thus produced have large hole concentrations and mobilities.
Hunsperger, R. G.↗
A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide
In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.
Lin, A. H.↗
Effects of positive ion implantation into antireflection coating of silicon solar cells
The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.
Middleton, A. E.↗