NASA NTRS · 19720039579
Mg and Be ion implanted GaAs.
Abstract
Description of methods for generating desired Be and Mg ions and producing the electrical properties of p-type layers by implanting these ions in GaAs substrates. It is shown that the p-type layers thus produced have large hole concentrations and mobilities.
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Hunsperger, R. G., Wilson, R. G., Jamba, D. M.. 1972-03-01. Mg and Be ion implanted GaAs.. https://ntrs.nasa.gov/citations/19720039579
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