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At least 73 records · Page 4

Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m 2 ·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.

Raman↗

Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

36 MATERIALS SCIENCE↗

Neutron Detectors for Scattering Applications

The book covers, for the first time, the most common neutron detectors used in neutron scattering facilities and all of those in use at Oak Ridge National Lab. The first two chapters describe the facilities, instruments and the critical detector parameters needed by various instruments. The third chapter focuses on the key components of the 3He-based linear position sensitive detectors as well as on their electronics, which require particular attention to signal-processing and noise reduction. The fourth chapter is dedicated to the 3He alternatives where scintillators play a critical role. Finally, chapter 5 covers emerging neutron detection technologies including semiconductors, vacuum-based devices and their associated readouts, which will be required in the future for high rate and high-resolution neutron detectors.

Diawara, Yacouba↗

Molecular Beam Epitaxy of Monocrystalline GaAs on Water-Soluble NaCl Thin Films

The goal of this project was to demonstrate the feasibility of employing an epitaxial NaCl thin film as a water-soluble release layer for III-V photovoltaic devices and GaAs substrate reuse. Over the course of this project efforts were focused on: 1) achieving crystalline NaCl thin films on GaAs (100) substrate, 2) exploring the growth parameters for subsequent GaAs on NaCl thin films in effort to improve crystallinity of the semiconductor layer, 3) deposition and removal of single crystalline solar cell devices from the parent substrate, and 4) improving morphology and reducing large scale defects in the removed layers to fabricate a working a solar cell device. There was no previous work on direct integration of GaAs/NaCl/GaAs heterostructures at the time of this study. We used molecular beam epitaxy (MBE) to deposit both the alkali halide salt and subsequent III-V material in the same chamber, with no vacuum break. Single crystalline GaAs films were achieved on NaCl layers through careful tuning of the growth parameters and exposure to the reflection high energy electron diffraction (RHEED) beam. Dissolution of the NaCl layer in water provided rapid release of the semiconductor layer from the substrate. Monocrystalline solar cells were grown on the III-V templates using MBE and dynamic hydride vapor phase epitaxy (HVPE). However, the extended time at elevated temperatures required for the cell growth resulted in large area defects from fusion of the semiconductor overlayer to the substrate, causing shorts in fabricated devices. By changing the way that the template layer was grown, the density of these defects could be reduced. Unfortunately, the defects were not reduced to a level allowing for fabrication of a working device.

14 SOLAR ENERGY↗

AlGaN/GaN Core-Shell Nanofin Diodes on Si Substrates for Vertical GaN Electronics

We demonstrate plasma-assisted MBE selective-area growth of GaN/AlGaN core-shell structures on Si(111) as a path to vertical GaN devices. The selective-area growth enables the full vertical and uniform core-shell fin structures to be realized in a continuous growth without breaking vacuum. TEM images and EDS mapping of the core-shell structures show well-aligned crystal structure and sharp heterointerfaces. Dislocation filtering was observed in STEM imaging of the fin structure. P-N junction diodes fabricated with GaN/AlGaN core-shell structures reveal ideality factors as low as 1.5, and the reverse-bias leakage is consistent with trap-assisted space-charge-limited conduction. While practical challenges exist, including material-related leakage, growth-related challenges and optimization, this demonstration of p-n junction by this method may provide a path to vertical Superjunction device concepts in GaN and related materials.

Xiong, Juncheng [University of Notre Dame, IN (Uni↗

Photon Frequency Conversion in High-Q Superconducting Resonators: Axion Electrodynamics, QED, and Nonlinear Meissner Radiation

High-Q superconducting resonators have been proposed and developed as detectors of light-by-light scattering mediated by the hypothesized axion or virtual electron–positron pairs in quantum electrodynamics: the Euler–Heisenberg (EH) interaction. Photon frequency and mode conversion is central to the scheme for detecting such rare events. Superconducting resonators are nonlinear devices. The Meissner screening currents that confine the electromagnetic fields to the vacuum region of a superconducting RF cavity are nonlinear functions of the EM field at the vacuum–superconducting interface, and as a result can generate source currents and frequency conversion of microwave photons in the cavity. In this report we consider photon frequency and mode conversion in superconducting resonators with high quality factors from Meissner currents in single- and dual-cavity setups proposed for axion and QED searches based on light-by-light scattering. In a single cavity with two pump modes, photon frequency conversion by the Meissner screening current dominates photon generation by the EH interaction for cavities with Q≲1012⁠. The Meissner currents also generate background photons that limit the operation of the resonator for axion detection in three-mode, single-cavity setups. We also consider the leakage of photons from pump modes into the signal mode for both axion- and EH-mediated light-by-light scattering. Photon frequency conversion by the EH interaction can compete with Meissner and leakage radiation in ultra-high-Q cavities that are beyond the current state of the art. Meissner radiation and leakage backgrounds can be suppressed in dual-cavity setups with appropriate choices for pump and spectator modes, as well as the single-cavity setup proposed for heterodyne detection of galactic axion dark matter.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Environmental damping and vibrational coupling of confined fluids within isolated carbon nanotubes

Abstract Because of their large surface areas, nanotubes and nanowires demonstrate exquisite mechanical coupling to their surroundings, promising advanced sensors and nanomechanical devices. However, this environmental sensitivity has resulted in several ambiguous observations of vibrational coupling across various experiments. Herein, we demonstrate a temperature-dependent Radial Breathing Mode (RBM) frequency in free-standing, electron-diffraction-assigned Double-Walled Carbon Nanotubes (DWNTs) that shows an unexpected and thermally reversible frequency downshift of 10 to 15%, for systems isolated in vacuum. An analysis based on a harmonic oscillator model assigns the distinctive frequency cusp, produced over 93 scans of 3 distinct DWNTs, along with the hyperbolic trajectory, to a reversible increase in damping from graphitic ribbons on the exterior surface. Strain-dependent coupling from self-tensioned, suspended DWNTs maintains the ratio of spring-to-damping frequencies, producing a stable saturation of RBM in the low-tension limit. In contrast, when the interior of DWNTs is subjected to a water-filling process, the RBM thermal trajectory is altered to that of a Langmuir isobar and elliptical trajectories, allowing measurement of the enthalpy of confined fluid phase change. These mechanisms and quantitative theory provide new insights into the environmental coupling of nanomechanical systems and the implications for devices and nanofluidic conduits.

36 MATERIALS SCIENCE↗

Portable Soft X-Ray Diagnostics for Transformative Fusion-Energy Concepts (Final Scientific/Technical Report)

A time-gated extreme-ultraviolet spectrometer was fielded on a transformative fusion-energy device, FuZE-Q at Zap Energy, Inc. (ZEI), a sheared-flow-stabilized z-pinch. Plasma emission spectra were collected in the 5–40 nm wavelength (30–250 eV) range. This was the first time a direct-vacuum-coupled, high-voltage, deposition-sensitive diagnostic was fielded on this type of dense-plasma fusion device. To overcome the special challenges of such a coupling, a unique, highly effective implementation was developed, with fast (10-ns risetime) pulsed high-voltage electronics and a multi-stage differential pumping system. This enabled the UNR spectrometer to collect three independently timed spectra per FuZE-Q shot while also protecting sensitive internal components. Analysis of line emission identified oxygen (N-, C-, B-, Be-, Li-, and He-like O), peaking in intensity shortly after maximum current (>500 kA). Spectral databases and collisional-radiative modeling have been used to identify impurities and estimate edge-plasma temperatures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Realization of a Quantum Slide Rule for 1+1 Dimensional Quantum Field Theories Using Josephson Superconducting Circuits

We have built a special type of electronic circuit—a “superconducting quantum simulator”—that allows us to mimic the behavior of complex quantum systems that are impossible to compute with ordinary computers. Our device is a long transmission line made of thousands of tiny superconducting junctions, acting as a one-dimensional “vacuum” for microwave photons. By terminating this line with a tunable, weak Josephson junction, we can control how strongly photons interact with each other.

74 ATOMIC AND MOLECULAR PHYSICS↗

Effect of Networking Density on the Patterning Performance of Molecular Layer Deposited Alucone Electron Beam/EUV Resists

One of the main barriers to continued device scaling in the era of extreme ultraviolet (EUV) lithography is the need for improved photoresist chemistries to address challenges such as poor EUV sensitivity, inadequate etch resistance, and pattern collapse. Metal-organic photoresists are a promising class of materials that can address many of these challenges, and among them, resists deposited via hybrid molecular layer deposition (MLD) have attracted interest for their unique advantages in thickness control, chemical homogeneity, and compatibility with vacuum processing. However, despite many successful demonstrations of patterning, little is known about how the molecular design of hybrid MLD resists affects their lithographic performance. In this work, we study the effect of the network structure, a common feature among all hybrid MLD resists, via a series of aluminum alkoxide ("alucone") negative tone resists with varying networking density. Their patterning mechanism is investigated via electron beam lithography (EBL)─a common proxy for EUV─and compared to their EUV-induced reactions studied via flood exposure and in situ characterization. In conclusion, we show that the resist with the least networking density demonstrates the best sensitivity and resolution, with the ability to resolve dense line/space gratings as small as 14 nm half pitch via EBL.

electron beam lithography↗

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗

Effects of a 4.3T superconducting wiggler on the electron beam optics and dynamics at NSLS-II

A superconducting wiggler (SCW) with a peak field of 4.3 T has recently been installed at NSLS-II. The wiggler generates a high-flux X-ray beam with a photon energy range from 20 keV to 200 keV for the High Energy Engineering X-ray Scattering beamline. This device induces significant distortions in the electron beam orbit and optics. Here, we have corrected these adverse effects using feed-forward tables. The effects of the SCW on the electron beam emittance, energy spread, and bunch length were calculated and measured. The beam-induced heating of the cryogenic vacuum chamber was also studied. Finally, the superconducting wiggler has been commissioned for user operations.

36 MATERIALS SCIENCE↗

Effects of transient thermal shock on the microstructures and corrosion properties of a reduced activation high-entropy alloy

The devices would subject transient thermal shocks (TTS) during operation under extremely harsh conditions of nuclear fusion reactors, which inevitably exert significant impact on the microstructure and performance of structural materials. Here, a reduced activation VCrFeTa 0.2 W 0.2 high-entropy alloy (HEA) was developed by vacuum arc melting. The effects of electron beam induced TTS on its microstructure, microhardness, and corrosion properties were investigated. The results indicate that the weight fraction of each phase changes after TTS, showing a significant decrease in the content of BCC1 phase and an increase in the content of BCC2 and Laves phases. The content of BCC1 phase continues to decrease slightly with increasing the power of TTS. Besides, the microhardness of the alloy increases from ~673 HV to ~714 HV after TTS treatments. In the reduced activation HEA, TTS results in a relatively low corrosion current density of ~0.472 μA/cm 2 in 3.5 wt% NaCl solution, around one-third of the current density observed in the as-cast sample. Furthermore, the VCrFeTa 0.2 W 0.2 HEA after TTS exhibits a pitting potential of ~1.165 V SCE , which is much higher than that of the as-cast sample. The refined composite multiscale entropy method is employed to analyze the influence of TTS on current fluctuation behavior during the corrosion process. The reduced activation VCrFeTa 0.2 W 0.2 HEA exhibits excellent properties in harsh environments after TTS, thereby showing advantageous property in the field of nuclear structural materials. Furthermore, TTS is an efficient and controllable strategy for the improvement of the HEAs’ microstructures and performances.

36 MATERIALS SCIENCE↗

Planar tunneling spectroscopy on van der Waals superconductors with AlO x junction grown by atomic layer deposition

Here, we demonstrate a method for fabricating a high-quality AlO x -based planar tunnel junction using atomic layer deposition, integrated with the exfoliation and transfer techniques for van der Waals (vdW) materials. The tunneling spectroscopy results on exfoliated Bi 2 Sr 2 CaCu 2 O 8+δ and 2H-NbSe 2 vdW superconductors are highly consistent with that obtained by ultrahigh vacuum scanning tunneling spectroscopy on atomically clean surfaces. The planar tunneling devices enable high-precision spectroscopy over a wide range of temperatures and magnetic fields and reveal novel features and stark contrast between high-T C cuprates and conventional superconductors. This method represents a universally applicable technique for probing the electronic structure of various two-dimensional vdW materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Copper–Carbon Nanotube Composites Enabled by Electrospinning for Advanced Conductors

The power losses associated with the electrical resistance of copper (Cu) have generated considerable interest in the development of advanced conductors that incorporate carbon nanotubes (CNTs) into the Cu matrix—ultraconductive Cu (UCC) composites—to increase energy efficiency in various industrial and residential applications, ranging from electric power transmission and rotating machinery to electronic devices. To meet this demand, we describe an electrospinning-based polymer nanofiber templating strategy for the fabrication of UCC composites with electrical and mechanical performance exceeding that of Cu. Our approach involves electrospinning of polyvinylpyrrolidone (PVP)-based solutions containing CNTs into aligned PVP/CNT nanofibers onto Cu foil substrates, followed by vacuum-assisted thermal removal of organic solvent/polymer from the CNT matrix to achieve a uniformly distributed CNT layer on the Cu surface. Following additional Cu deposition, the Cu–CNT–Cu composites demonstrated similar electrical conductivity, higher current carrying capacity, and improved mechanical properties compared with those obtained from reference Cu. Importantly, after the heat treatment, Raman analysis of the CNT network displayed an increased metallic character that supports the enhanced electrical properties of the UCC composites. Thus, we believe that these performance characteristics together with the commercial viability of the present approach could open new possibilities in designing advanced conductors for a broad range of electrical systems and industrial applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pulse Length Monitor for Breakdown Diagnostics in THz and Mm-Wave Accelerators

The development of novel high-gradient accelerating structures operating at THz frequencies is critical for future free-electron lasers and TeV scale linear colliders. To reach high energies with reasonable length requires high accelerating gradients of ~100 MV/m. The main limitation to reaching these high-energy gradients is the vacuum RF breakdown phenomenon, which disrupts normal accelerator operations. For stable operations and to understand the breakdown microscopic dynamics, a new device capable of detecting the breakdown occurrences is required. In this paper, we provide the design of a pulse length monitor based on an analog to digital converter for fast signal digitization without the need to use high-speed digitizers to be used in a commercial mm-wave heterodyne spectrometer.

43 PARTICLE ACCELERATORS↗

Physical vapor deposition simulator by graphical processor unit ray casting

This paper presents fast, accurate software for modeling physical vapor deposition systems over irregular surfaces. The model is implemented using graphics processing unit (GPU) ray casting. Applied models are viewed as a cross section of the area of interest. Given evaporation rate, time, and angular profiles in a vacuum system, an iterative time-step approach for calculating deposition profiles is calculated in the GPU architecture following a ballistic modeling approach. Thin-film technologies for the electronics industry will require evaporations on complex surfaces. Depending on the nature of the surface, a uniform thin film across the topology is wanted for various device parameters. The ray casting method is tested against various profiles. The code is freely distributed on GitHub (see https://github.com/adam-r-thomas/PVDS).

Engineering↗

MHD-induced beta limits in the Large Helical Device

Using the extended-magnetohydrodynamics code, M3D-C1, we perform a systematic numerical study of the effect of externally applied heating on the achievable plasma beta in a ten field-period heliotron. Heat sources of varying intensity are applied to a vacuum magnetic field that is representative of the standard configuration of the Large Helical Device, with R 0 = 3.66 m, where R 0 is the radial position of the magnetic axis in vacuum. As the system is driven to a state that is unstable to low-n magnetohydrodynamic (MHD) modes, nonlinear mode interactions lead to the formation of chaotic magnetic fields. With sufficiently strong heating, a collapse of the electron temperature profile is observed. This demonstrates the necessity of simulating the self-consistent evolution of plasma profiles, without imposing assumptions on the structure of the magnetic field, to accurately determine transport properties in stellarator plasmas. It also highlights the value of these advanced simulation capabilities for accelerating the development of high-performance stellarator operating scenarios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗