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NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗

NASA NTRS2004

New Generation Power System for Space Applications

The Deep Space Avionics (DSA) Project is developing a new generation of power system building blocks. Using application specific integrated circuits (ASICs) and power switching modules a scalable power system can be constructed for use on multiple deep space missions including future missions to Mars, comets, Jupiter and its moons. The key developments of the DSA power system effort are five power ASICs and a mod ule for power switching. These components enable a modular and scalab le design approach, which can result in a wide variety of power syste m architectures to meet diverse mission requirements and environments . Each component is radiation hardened to one megarad) total dose. The power switching module can be used for power distribution to regular spacecraft loads, to propulsion valves and actuation of pyrotechnic devices. The number of switching elements per load, pyrotechnic firin gs and valve drivers can be scaled depending on mission needs. Teleme try data is available from the switch module via an I2C data bus. The DSA power system components enable power management and distribution for a variety of power buses and power system architectures employing different types of energy storage and power sources. This paper will describe each power ASIC#s key performance characteristics as well a s recent prototype test results. The power switching module test results will be discussed and will demonstrate its versatility as a multip urpose switch. Finally, the combination of these components will illu strate some of the possible power system architectures achievable fro m small single string systems to large fully redundant systems.

power switching↗

NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗

NASA NTRS1976

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

Hower, P. L.↗

NASA NTRS1974

High-power microstrip switch

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Choi, S. D.↗

NASA NTRS1976

A general unified approach to modelling switching-converter power stages

A method for modeling switching-converter power stages is developed, whose starting point is the unified state-space representation of the switched networks and whose end result is either a complete state-space description or its equivalent small-signal low-frequency linear circuit model. A new canonical circuit model is proposed, whose fixed topology contains all the essential input-output and control properties of any dc-to-dc switching converter, regardless of its detailed configuration, and by which different converters can be characterized in the form of a table conveniently stored in a computer data bank to provide a useful tool for computer aided design and optimization. The new canonical circuit model predicts that, in general, switching action introduces both zeros and poles into the duty ratio to output transfer function in addition to those from the effective filter network.

Middlebrook, R. D.↗

NASA NTRS1981

Power transistor switching characterization

The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure. The effects of the magnitude of the reverse-base current and temperature on the reverse-bias second breakdown characteristics are discussed. Brief discussions of device degradation due to second breakdown and of a constant voltage turn-off circuit are included. A description of a vacuum tube voltage clamp circuit which reduces clamped collector voltage overshoot is given.

Blackburn, D. L.↗

NASA NTRS2009

Prognostic health monitoring in switch-mode power supplies with voltage regulation

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

Hofmeister, James P↗

NASA NTRS1982

Arc-Free High-Power dc Switch

Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.

Miller, W. N.↗

NASA NTRS1981

High voltage DC switchgear development for multi-kW space power system: Aerospace technology development of three types of solid state power controllers for 200-1100VDC with current ratings of 25, 50, and 80 amperes with one type utilizing an electromechanical device

Three types of solid state power controllers (SSPC's) for high voltage, high power DC system applications were developed. The first type utilizes a SCR power switch. The second type employes an electromechanical power switch element with solid state commutation. The third type utilizes a transistor power switch. Significant accomplishments include high operating efficiencies, fault clearing, high/low temperature performance and vacuum operation.

Billings, W. W.↗

NASA NTRS1980

Solid-state power controller

Compact, solid state, electric-power controller switches power on and off at remote load, limits current drawn by load, and shuts off (with 2- to 3- second trip time) in case of short circuit. Lightweight efficient hybrid unit operates at 28 volts dc and at maximum currents of from 3 to 2 amperes.

Fox, D. A.↗

NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗

NASA NTRS2005

Multistage Magnetic Separator of Cells and Proteins

The multistage electromagnetic separator for purifying cells and magnetic particles (MAGSEP) is a laboratory apparatus for separating and/or purifying particles (especially biological cells) on the basis of their magnetic susceptibility and magnetophoretic mobility. Whereas a typical prior apparatus based on similar principles offers only a single stage of separation, the MAGSEP, as its full name indicates, offers multiple stages of separation; this makes it possible to refine a sample population of particles to a higher level of purity or to categorize multiple portions of the sample on the basis of magnetic susceptibility and/or magnetophoretic mobility. The MAGSEP includes a processing unit and an electronic unit coupled to a personal computer. The processing unit includes upper and lower plates, a plate-rotation system, an electromagnet, an electromagnet-translation system, and a capture-magnet assembly. The plates are bolted together through a roller bearing that allows the plates to rotate with respect to each other. An interface between the plates acts as a seal for separating fluids. A lower cuvette can be aligned with as many as 15 upper cuvette stations for fraction collection during processing. A two-phase stepping motor drives the rotation system, causing the upper plate to rotate for the collection of each fraction of the sample material. The electromagnet generates a magnetic field across the lower cuvette, while the translation system translates the electromagnet upward along the lower cuvette. The current supplied to the electromagnet, and thus the magnetic flux density at the pole face of the electromagnet, can be set at a programmed value between 0 and 1,400 gauss (0.14 T). The rate of translation can be programmed between 5 and 2,000 m/s so as to align all sample particles in the same position in the cuvette. The capture magnet can be a permanent magnet. It is mounted on an arm connected to a stepping motor. The stepping motor rotates the arm to position the capture magnet above the upper cuvette into which a fraction of the sample is collected. The electronic unit includes a power switch, power-supply circuitry that accepts 110-Vac input power, an RS-232 interface, and status lights. The personal computer runs the MAGSEP software and controls the operation of the MAGSEP through the RS-232 interface. The status of the power, the translating electromagnet, the capture magnet, and the rotation of the upper plate are indicated in a graphical user interface on the computer screen.

Barton, Ken↗

NASA NTRS1993

INPIStron switched pulsed power for dense plasma pinches

The inverse plasma switch INPIStron was employed for 10kJ/40kV capacitor bank discharge system to produce focused dense plasmas in hypocycloidal-pinch (HCP) devices. A single unit and an array of multiple HCP's were coupled as the load of the pulsed power circuit. The geometry and switching plasma dynamics were found advantageous and convenient for commutating the large current pulse from the low impedance transmission line to the low impedance plasma load. The pulse power system with a single unit HCP, the system A, was used for production of high temperature plasma focus and its diagnostics. The radially running down plasma dynamics, revealed in image converter photographs, could be simulated by a simple snow-plow model with a correction for plasma resistivity. The system B with an array of 8-HCP units which forms a long coaxial discharge chamber was used for pumping a Ti-sapphire laser. The intense UV emission from the plasma was frequency shifted with dye-solution jacket to match the absorption band of the Ti crystal laser near 500 nm. An untuned laser pulse energy of 0.6 J/pulse was obtained for 6.4 kJ/40 kV discharge, or near 103 times of the explosion limit of conventional flash lamps. For both systems the advantages of the INPIStron were well demonstrated: a single unit is sufficient for a large current (greater than 50 kA) without increasing the system impedance, highly reliable and long life operation and implied scalability for the high power ranges above I(sub peak) = 1 MA and V(sub hold) = 100 kV.

Han, Kwang S.↗

NASA NTRS1986

Spacecraft solid state power distribution switch

As a spacecraft performs its mission, various loads are connected to the spacecraft power bus in response to commands from an on board computer, a function called power distribution. For the Mariner Mark II set of planetary missions, the power bus is 30 volts dc and when loads are connected or disconnected, both the bus and power return side must be switched. In addition, the power distribution function must be immune to single point failures and, when power is first applied, all switches must be in a known state. Traditionally, these requirements have been met by electromechanical latching relays. This paper describes a solid state switch which not only satisfies the requirements but incorporates several additional features including soft turn on, programmable current trip point with noise immunity, instantaneous current limiting, and direct telemetry of load currents and switch status. A breadboard of the design has been constructed and some initial test results are included.

Praver, G. A.↗

NASA NTRS1980

Application of small-signal modeling and measurement techniques to the stability analysis of an integrated switching-mode power system

Small-signal modeling techniques are used in a system stability analysis of a breadboard version of a complete functional electrical power system. The system consists of a regulated switching dc-to-dc converter, a solar-cell-array simulator, a solar-array EMI filter, battery chargers and linear shunt regulators. Loss mechanisms in the converter power stage, including switching-time effects in the semiconductor elements, are incorporated into the modeling procedure to provide an accurate representation of the system without requiring frequency-domain measurements to determine the damping factor. The small-signal system model is validated by the use of special measurement techniques which are adapted to the poor signal-to-noise ratio encountered in switching-mode systems. The complete electrical power system with the solar-array EMI filter is shown to be stable over the intended range of operation.

Wong, R. C.↗

NASA NTRS1985

Remote Power Controllers For High-Power dc Switching

Circuits combine functions of remotely controlled switch and circuit breaker. Circuits developed at different power levels but conceptually very similar. Selection of appropriate switching devices and minor modifications, circuits used to build RPC's covering range of voltage and power levels limited only by switching devices chosen. RPC's using GTO's have power capability ranging from 7.8 to 52 kW, while those using MOSFET's range from 8 to 15 kW. Applications include satellite, Space Station, commerical aircraft, naval vessels, and numerous industrial areas.

Sturman, J. C.↗

NASA NTRS2001

ISS EPS Orbital Replacement Unit Block Diagrams

The attached documents are being provided to Switching Power Magazine for information purposes. This magazine is writing a feature article on the International Space Station Electrical Power System, focusing on the switching power processors. These units include the DC-DC Converter Unit (DDCU), the Bi-directional Charge/Discharge Unit (BCDU), and the Sequential Shunt Unit (SSU). These diagrams are high-level schematics/block diagrams depicting the overall functionality of each unit.

Schmitz, Gregory V.↗