Power transistor switching characterization

Abstract

The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure. The effects of the magnitude of the reverse-base current and temperature on the reverse-bias second breakdown characteristics are discussed. Brief discussions of device degradation due to second breakdown and of a constant voltage turn-off circuit are included. A description of a vacuum tube voltage clamp circuit which reduces clamped collector voltage overshoot is given.