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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Amidinate Supporting Ligands Influence Molecularity in Formation of Uranium Nitrides

Uranium nitride complexes are attractive targets for chemists as molecular models for the bonding, reactivity, and magnetic properties of next-generation nuclear fuels, but these molecules are uncommon and can be difficult to isolate due to their high reactivity. Here, we describe the synthesis of three new multinuclear uranium nitride complexes, [U(BCMA) 2 ] 2 (μ-N)(μ-κ 1 :κ 1 -BCMA) (7), [(U(BIMA) 2 ) 2 (μ-N)(μ-N i Pr)(K 2 (μ-η 3 :η 3 -CH 2 CHN i Pr)] 2 (8), and [U(BIMA) 2 ] 2 (μ-N)(μ-κ 1 :κ 1 -BIMA) (9) (BCMA = N,N-bis(cyclohexyl)methylamidinate, BIMA = N,N-bis(iso-propyl)methylamidinate), from U(III) and U(IV) amidinate precursors. By varying the amidinate ligand substituents and azide source, we were able to influence the composition and size of these nitride complexes. 15 N isotopic labeling experiments confirmed the bridging nitride moieties in 7–9 were formed via two-electron reduction of azide. The tetra-uranium cluster 8 was isolated in 99% yield via reductive cleavage of the amidinate ligands; this unusual molecule contains nitrogen-based ligands with formal 1–, 2–, and 3– charges. Additionally, chemical oxidation of the U(IV) precursor U(N 3 )(BCMA) 3 yielded the cationic U(V) species [U(N 3 )(BCMA) 3 ][OTf]. Magnetic susceptibility measurements confirmed a U(IV) oxidation state for the uranium centers in the three nitride-bridged complexes and provided a comparison of magnetic behavior in the structurally related U(III)-U(IV)-U(V) series U(BCMA) 3 , U(N 3 )(BCMA) 3 , and [U(N 3 )(BCMA) 3 ][OTf]. At 240 K, the magnetic moments in this series decreased with increasing oxidation state, i.e., U(III) > U(IV) > U(V); this trend follows the decreasing number of 5f valence electrons along this series.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2021

Advanced Manufacturing of Alpha Double Prime Iron Nitride (ADPIN): An Innovative Rare Earth Element (REE) Free Ultra-High Performance Permanent Magnet for Clean Energy Applications

Iron nitride magnets offer the potential for large magnetic remanence magnets absent any rare earth materials [1]. This project was submitted in response to the funding opportunity announcement (FOA) from the Advanced Manufacturing Office (AMO) of the Office of Energy Efficiency & Renewable Energy (EERE) of the Department of Energy (DOE): DE-FOA-0001465: Advanced Manufacturing Projects for Emerging Research Exploration; Topic Area 1: Advanced Materials; Subtopic 1.1: Innovative Advanced Materials Manufacturing for Clean Energy to explore nitriding iron powder using a fluidized bed technique which if successful would accomplish nitriding the iron powder with reduce industrial energy intensity. Of particular concern when using metal powders at high temperatures in a fluidized bed reactor is the defluidization temperature of the bed, also known as the ‘bed collapse’ temperature. Above the defluidization temperature the metal powders can no longer fluidize and instead become an undesirable packed powder bed. Using the published results from the Institute of Process Engineering at the Chinese Academy of Sciences in Beijing, China, FeNix Magnetics was able to develop a spreadsheet calculation that allowed predictive guidelines for the defluidization temperature of iron powder based on the type of carrier gas, flow rate of the carrier gas, and the iron powder diameter. FeNix Magnetics was not able to conclude whether the temperatures to avoid bed defluidization that were achievable in a fluidized bed reactor actually resulted in nitriding the iron powder to the required level. In order to measure the amount of nitrogen in the iron powder, FeNix Magnetics contracted with the DOE sponsored Advanced Photon Source (APS) at Argonne National Laboratory to conduct X-Ray diffraction measurements. Unfortunately, due to COVID-19 restrictions, the DOE sponsored APS was closed and unable to provide X-Ray Diffraction measurements during this program.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Nonprecious transition metal nitrides as efficient oxygen reduction electrocatalysts for alkaline fuel cells

Hydrogen fuel cells have attracted growing attention for high-performance automotive power but are hindered by the scarcity of platinum (and other precious metals) used to catalyze the sluggish oxygen reduction reaction (ORR). We report on a family of nonprecious transition metal nitrides (TMNs) as ORR electrocatalysts in alkaline medium. The air-exposed nitrides spontaneously form a several-nanometer-thick oxide shell on the conductive nitride core, serving as a highly active catalyst architecture. The most active catalyst, carbon-supported cobalt nitride (Co 3 N/C), exhibited a half-wave potential of 0.862 V and achieved a record-high peak power density among reported nitride cathode catalysts of 700 mW cm –2 in alkaline membrane electrode assemblies. Operando x-ray absorption spectroscopy studies revealed that Co 3 N/C remains stable below 1.0 V but experiences irreversible oxidation at higher potentials. This work provides a comprehensive analysis of nonprecious TMNs as ORR electrocatalysts and will help inform future design of TMNs for alkaline fuel cells and other energy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Wang, Jiawei (ORCID:0000000257965220)↗
DOE OSTI2021

Metal nitride materials for solar-thermal ammonia production [Slides]

Solar Thermal Ammonia Production has the potential to synthesize ammonia in a green, renewable process that can greatly reduce the carbon footprint left by the conventional Haber-Bosch reaction. Co 3 Mo 3 N has been identified as a potential candidate for ammonia production. It is synthesized via oxide precursor synthesis followed by nitridation under 10% H 2 /N 2 . The synthesis method can be extended to other candidate nitrides. The Co 3 Mo 3 N → Co 6 Mo 6 N reduction is demonstrated on TGA with rapid kinetics. The formation of NH 3 is qualitatively observed, but not quantitatively determined. The material retains crystal structure, but no secondary phases are observed in XRD. Partial re-nitridation back to CMN331 of ~35% of max nitridation is observed. Reaction parameters in TGA differ from experimental conditions in the literature. Experiments at Georgia Tech better mimic re-nitridation conditions with more sensitive, quantitative analytical techniques (GC-MS). The ASU NH 3 synthesis/re-nitridation reactor is under development and will permit experiments (reduction/re-nitridation) under precisely controlled T, pH 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Method of making iron nitride powder with anisotropic shape

Techniques are disclosed for milling an iron-containing raw material in the presence of a nitrogen source to generate anisotropically shaped particles that include iron nitride and have an aspect ratio of at least 1.4. Techniques for nitridizing an anisotropic particle including iron, and annealing an anisotropic particle including iron nitride to form at least one a″-Fe16N2 phase domain within the anisotropic particle including iron nitride also are disclosed. In addition, techniques for aligning and joining anisotropic particles to form a bulk material including iron nitride, such as a bulk permanent magnet including at least one a″-Fe16N2 phase domain, are described. Milling apparatuses utilizing elongated bars, an electric field, and a magnetic field also are disclosed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Method and system for preparing polycrystalline group III metal nitride

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Iron nitride powder with anisotropic shape

Techniques are disclosed for milling an iron-containing raw material in the presence of a nitrogen source to generate anisotropically shaped particles that include iron nitride and have an aspect ratio of at least 1.4. Techniques for nitridizing an anisotropic particle including iron, and annealing an anisotropic particle including iron nitride to form at least one α″-Fe16N2 phase domain within the anisotropic particle including iron nitride also are disclosed. In addition, techniques for aligning and joining anisotropic particles to form a bulk material including iron nitride, such as a bulk permanent magnet including at least one α″-Fe16N2 phase domain, are described. Milling apparatuses utilizing elongated bars, an electric field, and a magnetic field also are disclosed.

Wang, Jian-Ping↗
DOE OSTI2026

Synthesis of Chromium(IV) Nitrides Through High-Spin Tetrahedral Chromium(I) Intermediates

Reduction of (depe) 2 CrCl 2 (depe = 1,2-bis- (diethylphosphino)ethane) and (dep-benz) 2 CrCl 2 (dep-benz = 1,2-bis(diethylphosphino)benzene) under 1 atm of N 2 furnished the dinitrogen complexes (depe) 2 Cr(N 2 ) 2 and (dep-benz) 2 Cr(N 2 ) 2 , respectively. One-electron oxidation of these products with FcBAr F 4 (Fc = ferrocenium, BAr F 4 = B(3,5-(CF 3 ) 2 C 6 H 3 ) 4 ) yielded the unusual, high-spin tetrahedral complexes [(depe) 2 Cr][BAr F 4 ] and [(dep-benz) 2 Cr][BAr F 4 ] with concomitant loss of dinitrogen. Reaction of the chromium(I) derivatives with Ph 3 CN 3 furnished rare examples of chromium(IV) nitrides as confirmed spectroscopically and by X-ray crystallography. While [(depe) 2 Cr(≡N)][BAr F 4 ] underwent association of isocyanides accompanied by partial ligand dissociation, neither chromium nitride was reactive toward H 2 or diphenylsilane under thermal or photochemical conditions. These results distinguish the unique properties of the chromium(IV) nitrides as compared to heavier group 6 congeners and demonstrate both the feasibility of nitride synthesis and the limitations of dinitrogen cleavage and subsequent N−H bond formation.

Chromium↗
DOE OSTI2021

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diverse chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N 2 , the number of predicted nitride compounds dwarfs the number that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Reactive flash sintering and characterization of bulk high entropy nitrides

Over the past decade, numerous high-entropy ceramics have been synthesized, often displaying attractive properties. However, the study on facile preparation of bulk high entropy nitrides (HEN) are limited, despite its broad potential applications. This research demonstrates for the first time rapid fabrication (within ∼6 min) of bulk high-entropy nitrides, especially (Al 0.17 Nb 0.17 Ta 0.17 Ti 0.32 Zr 0.17 )N, from binary nitride powder mixtures using a highly efficient reactive flash sintering (RFS) technique. X-ray diffraction (XRD) shows the HENs from RFS are near single-phase solid solutions with a rock salt crystal structure, while in situ synchrotron study carried out during RFS captured in real time the formation of HEN, which was preserved upon cooling, suggesting thermodynamic stability of the HEN phase, even up to extreme pressure (∼35.6 GPa). Microscopic analyses using SEM, STEM, and EDS reveal decent uniformity for HEN with no obvious segregation of elements, even to submicron scale. Some properties of the obtained bulk HENs are consistent with expectations. For example, their hardness and bulk modulus are close to estimates based on rule-of-mixture (ROM) values from the constituent binary nitrides. Meanwhile, some other measured properties seem to show surprises. For example, the fracture toughness for the HENs (e.g., 7.81 ± 1.40 MPa•m 1/2 or higher) turns out to be more than double of the expected ROM estimates. The significantly improved fracture toughness is attributed to the observed nano-layered structure of the HENs, despite the HEN’s cubic crystal structure and high hardness. In addition, the oxidation resistance shows improvement up till ∼800°C, possibly due to Ta doping that suppress oxygen vacancy formation in the oxide shell, while the 5-metal HEN of (Al 0.17 Nb 0.17 Ta 0.17 Ti 0.32 Zr 0.17 )N displays superconductivity (T c of ∼5–7 K from magnetism and resistivity measurements, slightly lower than ROM estimate), despite insulating property of starting AlN. Furthermore, future study combining experimental investigation using larger samples to confirm the observed increase in fracture toughness and oxidation resistance, theoretical modeling at different length scale, and more detailed structural/chemical characterization, especially at the atomic scale, are all needed to fully understand the inter-relationships between composition, processing, structure, and novel properties for these HENs and the development of related new materials for different applications.

Flash sintering↗
DOE OSTI2022

CeTaN 3 and CeNbN 3 : Prospective Nitride Perovskites with Optimal Photovoltaic Band Gaps

Perovskites constitute an exceptionally tunable materials family with diverse applications in electronics, optoelectronics, energy, and quantum technologies. Out of the thousands of known perovskites, the majority of compounds are oxides, halides, and chalcogenides. In contrast, only two nitride perovskites are currently known. In this work we perform a thorough ab initio computational screening of possible nitride perovskites, and we identify two new compounds, CeNbN 3 and CeTaN 3 , with band gaps in the near-infrared to visible range, depending on temperature. In their room-temperature orthorhombic phase, we predict that both compounds exhibit direct or quasidirect band gaps in the range 1.1–2.0 eV, with the Pnma phases matching the Shockley–Queisser limit for photovoltaic energy conversion efficiency. Further, these compounds are also predicted to be strong light absorbers, with absorption coefficients surpassing those of high-performance semiconductors such as GaAs and CH 3 NH 3 PbI 3 . The present findings reveal a potentially new class of nitride semiconductors with promise for electronics, optoelectronics, and light harvesting and for integration with existing nitride-based lighting technology.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Unraveling In-Situ Formation of Surface Nickel Nitride Structures in Plasma-Assisted Catalytic Ammonia Synthesis

We report the in situ formation of Ni nitride for plasma-assisted ammonia synthesis. Both the surface nitrogen concentration and the ammonia formation rate exhibit dependence on the N 2 :H 2 feed ratio. The maximum surface nitrogen concentration occurs at a N 2 :H 2 ratio of 4:1, and the maximum catalytic activity occurs at 2:1. In contrast, the formation of gas phase radicals is less sensitive to feed composition, indicating that Ni nitride is more kinetically relevant to ammonia production than gas-phase radicals. The plasma-induced formation of Ni nitride is therefore proposed to be a critical contributor to the synergistic effects in plasma-assisted catalytic ammonia synthesis. Additionally, Ni nitride alters the surface reaction mechanism of plasma-assisted ammonia synthesis, with the rate-determining-step (RDS) shifting to surface-bound NH 3 formation rather than N 2 activation at temperatures below 373 K. These findings provide mechanistic insight that opens opportunities for optimizing the performance of plasma-assisted catalytic ammonia synthesis

Ammonia↗
DOE OSTI2026

Ammonia Synthesis by a Supported Iron-Lithium Hydride Precatalyst: Silicon Nitride Support Enabled Synthesis and Nitrogen Reservoir Dynamics

Amorphous silicon nitride (Si 3 N 4 ) is an unconventional support for the chemisorption of organometallic complexes and offers potential improvements in active site stability and reactivity through enhanced metal-nitrogen covalency and orbital overlap in bonding interactions with the nitride framework. Here, we show that silicon nitride-supported iron mesityl complexes display divergent reactivity compared to their silica-supported homologues, resisting metallic particle formation under reducing pretreatment conditions (exposure to excess organolithium reagents) and maintaining active iron/lithium speciation under ammonia synthesis conditions that is absent on the oxide support. When the organometallic iron complex on silicon nitride is exposed to excess n-butyllithium, iron remains isolated, catalyzing the conversion of butyllithium to lithium hydride, resulting in a divalent iron site in a polyhydride environment. In contrast, the silica-supported complex is converted to reduced iron clusters without forming persistent isolated hydrides. These structural differences lead to markedly different catalytic behaviors under ammonia synthesis conditions. The Li/Fe/Si 3 N 4 catalyst is highly active (7.5 mol NH 3 /mol Fe/h at 300 °C, 10 bar, or 46 mol NH 3 /mol Fe/h at 400 °C, 10 bar), while both the silica-supported analog and the nonlithiated Si 3 N 4 -supported species are inactive. Notably, this activity is enhanced relative to previously reported iron-lithium hydride composite catalysts (0.43–4.1 mol NH 3 /mol Fe/h at 300 °C, 10 bar) and relative to the industrial benchmark promoted iron catalyst KM1 (3.0 mol NH 3 /mol Fe/h at 400 °C, 10 bar). The catalyst activation and LiH/LiNH x nitrogen reservoir dynamics for Li/Fe/Si 3 N 4 are studied by X-ray Absorption, Mössbauer, and in situ DRIFT spectroscopies and isotopic exchange kinetics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Mechanistically Guided Materials Chemistry: Synthesis of Ternary Nitrides, CaZrN 2 and CaHfN 2

Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN 2 ) and calcium hafnium nitride (CaHfN 2 ), by solid state metathesis reactions between Ca 3 N2 and MCl 4 (M = Zr, Hf). Although the reaction nominally proceeds to the target phases in a 1:1 ratio of the precursors via Ca 3 N 2 + MCl4 → CaMN 2 + 2 CaCl 2 , reactions prepared this way result in Ca-poor materials (Ca x M 2–x N2, x < 1). A small excess of Ca 3 N 2 (ca. 20 mol %) is needed to yield stoichiometric CaMN 2 , as confirmed by high-resolution synchrotron powder X-ray diffraction. In situ synchrotron X-ray diffraction studies reveal that nominally stoichiometric reactions produce Zr 3+ intermediates early in the reaction pathway, and the excess Ca 3 N 2 is needed to reoxidize Zr 3+ intermediates back to the Zr 4+ oxidation state of CaZrN 2 . Analysis of computationally derived chemical potential diagrams rationalizes this synthetic approach and its contrast from the synthesis of MgZrN 2 . These findings additionally highlight the utility of in situ diffraction studies and computational thermochemistry to provide mechanistic guidance for synthesis.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Photodriven Ammonia Synthesis from Manganese Nitrides: Photophysics and Mechanistic Investigations

Ammonia synthesis from N,N,O,O-supported manganese(V) nitrides and 9,10-dihydroacridine using proton-coupled electron transfer and visible light irradiation in the absence of precious metal photocatalysts is described. While the reactivity of the nitride correlated with increased absorption of blue light, excited-state lifetimes determined by transient absorption were on the order of picoseconds. Furthermore, this eliminated excited-state manganese nitrides as responsible for bimolecular N–H bond formation. Spectroscopic measurements on the hydrogen source, dihydroacridine, demonstrated that photooxidation of 9,10-dihydroacridine was necessary for productive ammonia synthesis. Transient absorption and pulse radiolysis data for dihydroacridine provided evidence for the presence of intermediates with weak E–H bonds, including the dihydroacridinium radical cation and both isomers of the monohydroacridine radical, but notably these intermediates were unreactive toward hydrogen atom transfer and net N–H bond formation. Additional optimization of the reaction conditions using higher photon flux resulted in higher rates of the ammonia production from the manganese(V) nitrides due to increased activation of the dihydroacridine.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Epitaxial integration of superconducting nitrides with cubic GaN

Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.

Condensed matter physics↗
DOE OSTI2021

Synthesis of LaWN 3 nitride perovskite with polar symmetry

Perovskite structured materials have a variety of uses as photovoltaics, capacitors, and micromechanical actuators, along with other applications. Oxides, halides, and chalcogenides all have large numbers of perovskite structured materials. Examples of perovskite nitrides are conspicuously absent, but Talley et al managed to synthesize one (see the Perspective by Hong). Lanthanum tungsten nitride in the perovskite structure turns out to be piezoelectric, which is ideal for a variety of applications. Perovskite structured nitrides are very attractive because they could easily integrate with the large number of nitride-based semiconducting devices already in use.

36 MATERIALS SCIENCE↗