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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Properties of a Variable-Delay Polarization Modulator

We investigate the polarization modulation properties of a variable-delay polarization modulator (VPM). The VPM modulates polarization via a variable separation between a polarizing grid and a parallel mirror. We find that in the limit where the wavelength is much larger than the diameter of the metal wires that comprise the grid, the phase delay derived from the geometric separation between the mirror and the grid is sufficient to characterize the device. However, outside of this range, additional parameters describing the polarizing grid geometry must be included to fully characterize the modulator response. In this paper, we report test results of a VPM at wavelengths of 350 micron and 3 mm. Electromagnetic simulations of wire grid polarizers were performed and are summarized using a simple circuit model that incorporates the loss and polarization properties of the device.

Chuss, David T.↗
NASA NTRS1990

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS2004

Portable Wireless Device Threat Assessment for Aircraft Navigation Radios

This paper addresses the concern for Wireless Local Area Network devices and two-way radios to cause electromagnetic interference to aircraft navigation radio systems. Spurious radiated emissions from various IEEE 802.11a, 802.11b, and Bluetooth devices are characterized using reverberation chambers. The results are compared with baseline emissions from standard laptop computer and personal digital assistants (PDAs) that are currently allowed for use on aircraft. The results indicate that the WLAN devices tested are not more of a threat to aircraft navigation radios than standard laptop computers and PDAs in most aircraft bands. In addition, spurious radiated emission data from seven pairs of two-way radios are provided. These two-way radios emit at much higher levels in the bands considered. A description of the measurement process, device modes of operation and the measurement results are reported.

Nguyen, Truong X.↗
NASA NTRS2007

Phototransistors Development and their Applications to Lidar

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

Abedin, M. N.↗
NASA NTRS2010

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Patterson, Richard↗
NASA NTRS1976

Construction of prototypes of a new class of infrared detectors

A class of infrared detectors is proposed and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage calculated from the measured resistance. For the parameters characterizing this device the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity for much thinner devices than the prototypes.

Sher, A.↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS2023

2023 Astrophotonics Roadmap: Pathways to Realizing Multi-Functional Integrated Astrophotonic Instruments

Photonic technologies offer numerous functionalities that can be used to realize astrophotonic instruments. The most spectacular example to date is the ESO Gravity instrument at the Very Large Telescope in Chile that combines the light-gathering power of four 8 m telescopes through a complex photonic interferometer. Fully integrated astrophotonic devices stand to offer critical advantages for instrument development, including extreme miniaturization when operating at the diffraction-limit, as well as integration, superior thermal and mechanical stabilization owing to the small footprint, and high replicability offering significant cost savings. Numerous astrophotonic technologies have been developed to address shortcomings of conventional instruments to date, including for example the development of photonic lanterns to convert from multimode inputs to single mode outputs, complex aperiodic fiber Bragg gratings to filter OH emission from the atmosphere, complex beam combiners to enable long baseline interferometry with for example, ESO Gravity, and laser frequency combs for high precision spectral calibration of spectrometers. Despite these successes, the facility implementation of photonic solutions in astronomical instrumentation is currently limited because of (1) low throughputs from coupling to fibers, coupling fibers to chips, propagation and bend losses, device losses, etc, (2) difficulties with scaling to large channel count devices needed for large bandwidths and high resolutions, and (3) efficient integration of photonics with detectors, to name a few. In this roadmap, we identify 24 key areas that need further development. We outline the challenges and advances needed across those areas covering design tools, simulation capabilities, fabrication processes, the need for entirely new components, integration and hybridization and the characterization of devices. To realize these advances the astrophotonics community will have to work cooperatively with industrial partners who have more advanced manufacturing capabilities. With the advances described herein, multi-functional integrated instruments will be realized leading to novel observing capabilities for both ground and space based platforms, enabling new scientific studies and discoveries.

astrophotonics↗
NASA NTRS1973

Avalanche diodes for the generation of coherent radiation

Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.

Penfield, P., Jr.↗
NASA NTRS1976

LaF3 infrared detector

A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.

Sher, A.↗
NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗
NASA NTRS1999

Autonomous Science Decision Making for Mars Sample Return

In the near future NASA intends to explore Mars in preparation for a sample return mission using robotic devices such as landers, rovers, orbiters, airplanes, and/or balloons. Such platforms will likely carry imaging devices to characterize the surface morphology, and a variety of analytical instruments intended to evaluate the chemical and mineralogical nature of the environment(s) that they encounter. Historically, mission operations have involved the following sequence of activities: (1) return of scientific data from the vehicle; (2) evaluation of the data by space scientists; (3) recommendations of the scientists regarding future mission activity; (4) transmission of commands to the vehicle to achieve this activity; and (5) new activity by the vehicle in response to those commands. This is repeated for the duration of the mission, with command opportunities once or perhaps twice per day. In a rapidly changing environment, such as might be encountered by a rover traversing hundreds of meters a day or an airplane soaring over several hundred of kilometers, this traditional cycle of data evaluation and commands is not amenable to rapid long range traverses, discovery of novelty, or rapid response to any unanticipated situations. In addition, to issues of response time, the nature of imaging and/or spectroscopic devices are such that tremendous data volumes can be acquired, for example during a traverse. These data volumes can rapidly exceed on-board memory capabilities prior to an opportunity to transmit it to Earth.

Roush, Ted L.↗
NASA NTRS2004

Making Precise Resonators for Mesoscale Vibratory Gyroscopes

An alternative approach to the design and fabrication of vibratory gyroscopes is founded on the use of fabrication techniques that yield best results in the mesoscopic size range, which is characterized by overall device dimensions of the order of a centimeter. This approach stands in contradistinction to prior approaches in (1) the macroscopic size range (the size range of conventional design and fabrication, characterized by overall device dimensions of many centimeters) and (2) the microscopic size range [the size range of microelectromechanical systems (MEMS), characterized by overall device dimensions of the order of a millimeter or less]. The mesoscale approach offers some of the advantage of the MEMS approach (sizes and power demands smaller than those of the macroscale approach) and some of the advantage of the macroscale approach (the possibility of achieving relative dimensional precision greater than that of the MEMS approach). Relative dimensional precision is a major issue in the operation of a vibratory gyroscope. The heart of a vibratory gyroscope is a mechanical resonator that is required to have a specified symmetry in a plane orthogonal to the axis about which rotation is to be measured. If the resonator could be perfectly symmetrical, then in the absence of rotation, a free vibration of the resonator could remain fixed along any orientation relative to its housing; that is, the gyroscope could exhibit zero drift. In practice, manufacturing imprecision gives rise to some asymmetry in mass, flexural stiffness or dissipation, resulting in a slight drift or beating motion of an initial vibration pattern that cannot be distinguished from rotation. In the mesoscale approach, one exploits the following concepts: For a given amount of dimensional error generated in manufacturing, the asymmetry and hence the rate-of-rotation drift of the gyroscope can be reduced by increasing the scale. The decrease in asymmetry also reduces coupling of vibrations to the external environment. Mechanical thermal noise and electronic measurement noise and drift can also be reduced by increasing the size of the resonator and its associated sensors.

Yang, Eui-Hyeok↗
NASA NTRS1974

Heat transfer device

A heat transfer device is characterized by an hermetically sealed tubular housing including a tubular shell terminating in spaced end plates, and a tubular mesh wick concentrically arranged and operatively supported within said housing. The invention provides an improved wicking restraint formed as an elongated and radially expanded tubular helix concentrically related to the wick and adapted to be axially foreshortened and radially expanded into engagement with the wick in response to an axially applied compressive load. The wick is continuously supported in a contiguous relationship with the internal surfaces of the shell.

Kalkbrenner, R. W.↗
NASA NTRS1974

Device for monitoring a change in mass in varying gravimetric environments

A remotely operable device for detecting changes as they occur in the mass of a selected specimen is described. The device is characterized by a balance beam including at one end a support for receiving a specimen having a changing mass and suspension means, including a flexure, supporting the beam near its center of gravity for pivotal movement proportional to changes occurring in the mass of the specimen. Strain gages coupled with the flexure provide a read-out indicative of the pivotal movement imparted to the beam.

Valinsky, J. P.↗
NASA NTRS1974

Device for measuring tensile forces

This device is characterized by an elongated body having predetermined elastic properties. An applied tensile force of any magnitude, within a given range, imparts to the body an elongation of a predetermined length. The magnitude of applied tensile force is indicated as a function of the angular motion afforded the threaded sleeve mounted on the body.

Appleberry, W. T.↗
NASA NTRS1976

Heat transfer device

An improved heat transfer device particularly suited for use as an evaporator plate in a diffusion cloud chamber. The device is characterized by a pair of mutually spaced heat transfer plates, each being of a planar configuration, having a pair of opposed surfaces defining therebetween a heat pipe chamber. Within the heat pipe chamber, in contiguous relation with the pair of opposed surfaces, there is disposed a pair of heat pipe wicks supported in a mutually spaced relationship by a foraminous spacer of a planar configuration. A wick including a foraminous layer is contiguously related to the external surfaces of the heat transfer plates for uniformly wetting these surfaces.

Eaton, L. R.↗