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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Electron tunneling as a basis for semiconduction in proteins

Electron tunneling is investigated as a possible mechanism for the conduction of electrical current in solids composed of protein molecules. An intermolecular potential barrier is assumed which takes into account the applied electric field and the possibility of image charge effects. The WKB approximation is used to calculate the net tunneling current density and resulting conductivity. The results suggest that electron tunneling per se is not a suitable mechanism for explaining the observed conductivities in such materials.

Flax, L.↗
NASA NTRS1975

Semiconducting polymers for gas detection

Conjugated polyenes, and polyesters containing phthalocyanine in their backbone, were synthesized. These polymers were characterized by chemical analysis, thermogravimetric analysis, spectral analysis, and X-ray diffraction studies for crystallinity, as well as for their film-forming capability and gas/polymer interactions. Most of the polymers were relatively insensitive to water vapor up to 50 percent relative humidity, but the polyester/phthalocyanine (iron) polymer was relatively insensitive up to 100 percent RH. On the other hand, poly(p-dimethylaminophenylacetylene) was too conductive at 100 percent RH. Of the gases tested, the only ones that gave any evidence of interacting with the polymers were SO2, NOx, HCN and NH3. Poly(imidazole)/thiophene responded to each of these gases at all relative humidities, while the other polymers gave varying response, depending upon the RH. Thus, since most of these gases were electron-accepting, the electron-donating character of poly(imidazole)/thiophene substantiates the concept of electronegativity being the operating principle for interaction effects. Of the six polymers prepared, poly(imidazole)/thiophene first showed a very good response to smoldering cotton, but it later became nonresponsive; presumably due to oxidation effects.

Byrd, N. R.↗
NASA NTRS1978

Activation analysis of admixtures in certain semiconductive materials

The use of extractions and chromatographic operations to separate macrobases, and to divide elements into groups convenient for gamma-spectrometric analysis is discussed. Methods are described for the activation detection of some impurities in silicon, arsenic, thallium, and trichloromethylsilane, on the basis of the extraction properties of bis(2-chlorethyl ether) and dimethylbenzylalkylammonium chloride. A schematic diagram of the extraction separation of elements-admixture is presented showing the aqueous and organic phases. The content percentage of the various elements are given in tables.

Artyukhin, P. I.↗
NASA NTRS1978

The semiconductivity and stability of palladium oxide

Palladium metal films are prepared on quartz substrates by RF sputtering from a pure palladium target in an argon atmosphere. These films are then oxidized in air or in an oxygen atmosphere at 700 C for periods between 24 hr and 6 days. Either treatment is found to produce good-quality thin films of PdO with a uniform orange transmission. Attention is focused on optical and electrical conductivity measurements made on PdO films with a view toward determining their band gap, conductivity and thermal stability in vacuum and in the presence of oxygen. It is shown that hydrogen greatly reduces the thermal stability of PdO. The film decomposes to Pd metal by 350 K in the presence of hydrogen as compared to a temperature of about 580 K in vacuum.

Rey, E.↗
NASA NTRS1978

High pressure phase transitions in tetrahedrally coordinated semiconducting compounds

New experimental results are reported for structural transitions at high pressure in several III-V compounds and two II-VI compounds. These data, together with earlier results, are then compared with the predictions of model calculations of Van Vechten. Experimental transition pressures are often at variance with calculated values. However, his calculation assumes that the high pressure phase is metallic, with the beta-Sn structure. The present results show that several compounds assume an ionic NaCl structure at high pressure, while others have neither the beta-Sn nor NaCl structure.

Yu, S. C.↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

Vydyanath, H. R.↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Vydyanath, H. R.↗
NASA NTRS1985

General theory of the transverse dielectric constant of III-V semiconducting compounds

A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

Kahen, K. B.↗
NASA NTRS1990

Microhardness variations in II-VI semiconducting compounds as a function of composition

A comparison is made of microhardness variations as a function of composition in directionally solidified alloys of Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Hg(1-x)Cd(x)Se, and Hg(1-x)Zn(x)Se, using the same growth method for all four systems in order to eliminate preparation-induced mechanical property variations. In each case, compositional analysis was performed next to a microhardness indentation. Due to the 14-percent shorter bond length of ZnTe relative to HgTe, Zn-base alloy mechanical strength should exceed that of Cd-base systems. Experimental verification is furnished for this hardening effect in both Hg(1-x)Zn(x)Te and Hg(1-x)Zn(x)Se.

Andrews, R. N.↗
NASA NTRS1991

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗
NASA NTRS1994

Crystal growth of selected II-VI semiconducting alloys by directional solidification

A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first United States Microgravity Laboratory (USML-1) mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that HgZnTe alloy ingots partially grown and quenched on the ground can be back-melted and regrown in space under nearly steady state growth conditions. An identical 'ground-truth' experiment was performed following the mission. Preliminary results are presented for both crystals, as well as for a series of other crystals grown prior to the mission for the purposes of optimizing in-flight growth conditions.

Lehoczky, Sandor L.↗
NASA NTRS1996

Properties of Single Crystalline Semiconducting CoSb3

A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration. Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb3 such as linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K. Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 sq cm/V.s at a carrier concentration of 1 x 10(exp 17)/cc. The results of the transport property measurements are discussed and are in agreement with some recent predictions based on band structure calculations. The potential of CoSb3 for thermoelectric applications is evaluated.

Caillat, T.↗