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NASA NTRS · 19950007800

Crystal Growth of Selected II-VI Semiconducting Alloys By Directional Solidification

S L Lehoczky·F R Szofran·D C Gillies·S D Cobb·C-H Su·Y-G Sha·R N Andrews
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Abstract

A Hg 0.84 Zn 0.16 Te alloy crystal was back-melted and partially resolidified during the first United States Microgravity Laboratory (USML-1) mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that HgZnTe alloy ingots partially grown and quenched on the ground can be back-melted and regrown in space under nearly steady state growth conditions. An identical 'ground-truth' experiment was performed following the mission. Preliminary results are presented for both crystals, as well as for a series of other crystals grown prior to the mission for the purposes of optimizing in-flight growth conditions.

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S L Lehoczky, F R Szofran, D C Gillies, S D Cobb, C-H Su, Y-G Sha, R N Andrews. 1994-05-01. Crystal Growth of Selected II-VI Semiconducting Alloys By Directional Solidification. https://ntrs.nasa.gov/citations/19950007800

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