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At least 73 records · Page 4

Effects of ionizing radiation on CCD's

The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.

Hartsell, G. A.↗

The intensified charge coupled device as a photon counting imager

Actual and projected performance of an intensified charge coupled device (ICCD) to be used as a photon counting imager will be presented. Effects of tube processing on such important CCD parameters as charge transfer efficiency and dark current are discussed.

Williams, J. T.↗

Applications of charge-coupled device transversal filters to communication

The paper discusses the computational power of state-of-the-art charged-coupled device (CCD) transversal filters in communications applications. Some of the performance limitations of CCD transversal filters are discussed, with attention given to time delay and bandwidth, imperfect charge transfer efficiency, weighting coefficient error, noise, and linearity. The application of CCD transversal filters to matched filtering, spectral filtering, and Fourier analysis is examined. Techniques for making programmable transversal filters are briefly outlined.

Buss, D. D.↗

High data rate performance of a BCCD for rapid scan imaging

A commercially available 1728 element shallow bulk channel CCD line array was clocked at output data rates up to 30 MHz. Temporal noise was near 200 electrons and was largely independent of clock rate. Charge transfer efficiency was in excess of 0.9999 at 30 MHz. Utilization is feasible for visual simulation and aerial mapping.

Schmieder, D. E.↗

A backside illuminated 400 x 400 charge-coupled device imager

Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz.

Antcliffe, G. A.↗

InSb charge coupled infrared imaging device: The 20 element linear imager

The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.

Thom, R. D.↗

Centroid tracking with area array detectors

A computer program (ALGEVAL) has been developed to simulate the position estimating behavior of a centroid estimator algorithm using data typical of optical point spread function data recorded by an area array detector. Typical results are shown of varying detector properties and optical point spread function types. The detector parameters currently available for study include read noise mean value, dark current mean value and spatial variation, charge transfer efficiency and point spread function location, saturation level, signal level and pixel size. The program is capable of calculating any order centroid using an array size from 2 x 2 to 15 x 15 pixels. The output of the program is either a performance map, histogram data or tabluar data. A number of further developments are recommended.

Glavich, T. A.↗

Electro-optical characterization of the Tektronix TK512M-011 charge-coupled device

An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.

Epperson, Patrick M.↗

Radiation damage in scientific charge-coupled devices

Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.

Janesick, James↗

Proton radiation effects on multi-pinned-phased CCDs

Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.

Murata-Seawalt, D.↗

Radiation damage in a Tektronix 512 CCD

A Tektronix CCD was subjected to a proton beam. Comparisons were made of the CCD characteristics before, during, and after radiation. Gain and readout noise were not affected and charge transfer efficiency, full well, and dark current were. Permanent CTE damage resulted immediately upon radiation, but full well damage developed two days after radiation, while the dark current showed signs of recovery before permanent damage occurred. Histogram analysis showed that the most spiky-type behavior resulted from damage to defects existing in the CCD before radiation.

Brown, Larry W.↗

A resistive-gate In(0.53)Ga(0.47)As/InP heterostructure CCD

The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.

Rossi, D. V.↗

The Space Telescope imaging spectrograph 2048 CCD and its characteristics

Development of a 2048-squared CCD for a second-generation Space Telescope instrument has produced some very encouraging devices. The first experimental lot of 10 devices have very few defects, dark currents of less than 40 electrons/pixel/hour at -80 C, readout noise levels of less than 4 electrons rms and excellent charge transfer efficiency at signal levels of less than 10 electrons.

Delamere, W. A.↗

CCDs and photon counting devices: Applications in space and from the ground

The development of the 2048 by 2048 CCD (Charge Coupled Device) for a second generation space telescope instrument has resulted in devices with very few defects, dark currents of less than 12 electrons/pixel/hour at -80 deg, readout noise levels of less than 4 electrons rms, and excellent charge transfer efficiency at signal levels of less than 10 electrons. A second generation of devices that capitalize on these characteristics have been produced and are currently in test. Faster frame transfer devices that preserve these characteristics have been designed that include tridirectional taps in the serial register. The state of the art in CCD's as photon counting detectors is reviewed.

Delamere, W. A.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

Hunt, W. D.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state high definition television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels per frame. This imager offers an order of magnitude improvement in speed over CCD designs and will allow for monolithic imagers operating from the IR to the UV. The technical approach of the project focuses on the development of the three basic components of the imager and their integration. The imager chip can be divided into three distinct components: (1) image capture via an array of avalanche photodiodes (APD's), (2) charge collection, storage and overflow control via a charge transfer transistor device (CTD), and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the development of manufacturable designs for each of these component devices. In addition to the development of each of the three distinct components, work towards their integration is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail in Sections 2-4.

Hunt, W. D.↗

The performance and calibration of WFPC2 on the Huble Space Telescope

The Wide Field Planetary Camera 2 (WFPC2) was installed in the Hubble Space Telescope (HST) in 1993 December. Since then, the instrument has been providing high-quality images. A significant among of calibration data has been collected to aid in the understanding of the on-orbit performance of the instrument. Generally, the behavior of the camera is similar to its performance during the system-level thermal vacuum test at JPL in 1993 May. Surprises were a significant charge-transfer-efficiency (CTE) problem and a significant growth rate in hot pixels at the original operating temperature of the CCDs (-76 deg C). The operating temperature of the WFPC2 CCDs was changed to -88 deg C on 1994 April 23, and significant improvements in CTE and hot pixels are seen at this temperature. In this paper we describe the on-orbit performance of the WFPC2. We discuss the optical and thermal history, the instrument throughput and stability, the Point Spread Function (PSF), the effects of undersampling on photometry, the properties of cosmic rays observed on-orbit, and the geometric distortion in the camera. We present the best techniques for the reduction of WFPC2 data, and describe the construction of calibration products including superbiases, superdarks, and flat fields.

Holtzman, Jon↗

Radiation Environment of the Chandra X-Ray Observatory

The Chandra X-ray Observatory lies in a highly elliptical orbit which dips into the outer radiation belt. During the initial stages of orbital operations, Chandra's front-illuminated CCD's (but not the back-illuminated ones) experienced an unanticipated degradation of the charge-transfer efficiency. The subsequent anomaly investigation determined that moderately low-energy protons (or other ions) propagated through the mirror assembly, causing the observed damage. This paper summarizes the effort to determine the radiation environment at the Chandra focal plane and the steps taken to prevent further performance degradation by magnetospheric and solar-wind protons and other ions.

ODell, S. L.↗