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At least 703 records · Page 39

Implantable drug therapy device: A concept

Design is described of small, rechargeable, implantable infusor which contains fluid medicament stored under pressure and which dispenses fluid continuously through catheter. Body of infusor is covered by pliable silicone rubber sheath attached to suture pad for securing device.

Feldstein, C.↗

Applicability of implantable telemetry systems in cardiovascular research.

This paper briefly describes the results of an experimental program undertaken to develop and apply implanted telemetry to cardiovascular research. Because of the role the kidney may play in essential hypertension, emphasis is placed on telemetry's applicability in the study of renal physiology. Consequently, the relationship between pressure, flow, and hydraulic impedance are stressed. Results of an exercise study are given.

Krutz, R. W.↗

Mg and Be ion implanted GaAs.

Description of methods for generating desired Be and Mg ions and producing the electrical properties of p-type layers by implanting these ions in GaAs substrates. It is shown that the p-type layers thus produced have large hole concentrations and mobilities.

Hunsperger, R. G.↗

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

Lin, A. H.↗

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗

Single and multichannel implanted telemetry systems.

Description of improved single-channel and multichannel telemetry systems designed for measurements of single and multiple physiological parameters, respectively, with adequate accuracy. The systems include a single-channel biopotential transmitter, a temperature transmitter, a pressure transmitter, and a multichannel transmitter for implant telemetric applications.

Sandler, H.↗

Photoluminescence of Zn-implanted GaN

The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

Pankove, J. I.↗

The effect of Be/+/ ion implanted exponential and uniform impurity profiles on the electrical characteristics of GaAs solar cells

The high surface recombination velocity is the major deterrent to obtaining efficient GaAs solar cells. If, however, an electric field is built in at the surface, the carriers will be swept away from the surface thus minimizing the surface recombination velocity problem. It has been previously shown theoretically that an exponential impurity distribution in the doped region of the cell results in a built-in electric field. Ion implantation was used to produce solar cells with an exponential impurity profile and cells with uniform profiles. It is shown that cells with an exponential impurity profile have higher open-circuit voltage, fill factors, and spectral response than those with a uniform impurity profile.

Vaidyanathan, K. V.↗

Ion implantation effects in 'cosmic' dust grains

Cosmic dust grains, whatever their origin may be, have probably suffered a complex sequence of events including exposure to high doses of low-energy nuclear particles and cycles of turbulent motions. High-voltage electron microscope observations of micron-sized grains either naturally exposed to space environmental parameters on the lunar surface or artificially subjected to space simulated conditions strongly suggest that such events could drastically modify the mineralogical composition of the grains and considerably ease their aggregation during collisions at low speeds. Furthermore, combined mass spectrometer and ionic analyzer studies show that small carbon compounds can be both synthesized during the implantation of a mixture of low-energy D, C, N ions in various solids and released in space by ion sputtering.

Bibring, J. P.↗

A mass spectrometric system for analyzing thermal desorption spectra of ion-implanted argon and cesium in tungsten

A mass spectrometric system for determining the characteristics of materials used in instrumental development and aerospace applications was developed. The desorption spectra of cesium that was ion-implanted into polycrystalline tungsten and the effects on the spectra of bombardment of the tungsten by low energy (70 eV) electrons were investigated. Work function changes were measured by the retarding potential diode method. Flash desorption characteristics were observed and gas-reaction mechanisms of the surface of heated metal filaments were studied. Desorption spectra were measured by linearly increasing the sample temperature at a selected rate, the temperature cycling being generated from a ramp-driven dc power supply, with the mass spectrometer tuned to a mass number of interest. Results of the study indicate an anomolous desorption mechanism following an electron bombardment of the sample surface. The enhanced spectra are a function of the post-bombardment time and energy and are suggestive of an increased concentration of cesium atoms, up to 10 or more angstroms below the surface.

Wood, G. M., Jr.↗

Dosimeter design, construction, and implantation

To detect the passage of cosmic ray particles through the heads of the pocket mice during the Apollo XVII flight, a 'monitor' (dosimeter) composed of plastics was prepared and implanted under the scalp. The monitor was mounted on a platform, the undersurface of which fitted the contour of the skull. Numerous tests were run to assure that the presence of the monitor assembly beneath the scalp would be compatible with the well-being of the mice and that the capacity of the monitor to detect the traversal of cosmic ray particles would be preserved over the several weeks during which it would remain under the scalp.

Winter, D. L.↗

Ion implanted photodiode detectors in epitaxial /Ga/x/In/1-x//As

Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of x between zero and one. High values for quantum efficiency were obtained for the devices with a high value of x.

Ajmera, P. K.↗

Magnetic electrical connectors for biomedical percutaneous implants

A biomedical percutaneous connector is described which includes a socket having an enlarged disk shaped base portion for being implanted below the patient's skin and cylindrical portion which is integral with the base portion and extends outwardly of the skin. A conical recess in an upper end of the cylindrical portion has a magnet located in the base. Inclined conductive strips are carried on an upper end of the cylindrical portion to which electrical conductors are attached and extend into the patient's body. A complementary shaped plug which also has electrical contacts provided thereon is adapted to fit within the conical recess of the socket. The plug is held in the socket by magnetic force.

Owens, L. J.↗

Photoluminescence of ion-implanted GaN

Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

Pankove, J. I.↗

Does application of the Rosiwal Principle to lunar soils require that concentrations of solar-wind-implanted species be grain-size independent

A reconsideration of the application of the Rosiwal Principle to lunar soils indicates a flaw in arguments put forth previously by Criswell (1975). Specifically, by introducing a boundary condition which must exist at the lunar surface, it is shown that concentrations of solar-wind-implanted species showing a dependence on grain size may be able to develop in soils at concentration levels below those required for saturation of grain surfaces. As a result, observed grain-size-dependent concentrations of solar-wind species in lunar soils do not necessarily require the exposure time scales or solar-wind fluxes deduced from the arguments of Criswell.

Becker, R. H.↗

Biocompatibility of surgical implants

Method of selecting biocompatible materials for surgical implants uses fracture mechanic relationships and surface energies of candidate materials in presence of blood plasma. Technique has been used to characterize 190 materials by parameters that reflect their biocompatibility.

Kaelble, D. H.↗

All-ion-implantation process for integrated circuits

Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

Woo, D. S.↗

Mechanical properties of ion-beam-textured surgical implant alloys

An electron-bombardment Hg ion thruster was used as an ion source to texture surfaces of materials used to make orthopedic and/or dental prostheses or implants. The materials textured include 316 stainless steel, titanium-6% aluminum, 4% vanadium, and cobalt-20% chromium, 15% tungsten. To determine the effect of ion texturing on the ultimate strength and yield strength, stainless steel and Co-Cr-W alloy samples were tensile tested to failure. Three types of samples of both materials were tested. One type was ion-textured (the process also heats each sample to 300 C), another type was simply heated to 300 C in an oven, and the third type was untreated. Stress-strain diagrams, 0.2% offset yield strength data, total elongation data, and area reduction data are presented. Fatigue specimens of ion textured and untextured 316 stainless steel and Ti-6% Al-4% V were tested. Included as an ion textured sample is a Ti-6% Al-4% V sample which was ion machined by means of Ni screen mask so as to produce an array of 140 mu m x 140 mu m x 60 mu m deep pits. Scanning electron microscopy was used to characterize the ion textured surfaces.

Weigand, A. J.↗