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At least 685 records · Page 38

Electron Density Measurements Using USPR (Final Scientific/Technical Report)

UC Davis has fabricated an ultrashort pulse reflectometer (USPR) diagnostic instrument for electron density profile measurements on compact, short duration, magnetically-confined fusion-energy concept devices such as spheromaks and FRCs. The USPR system transmits extremely short duration (~few nsec) chirped waveforms that together span 29 to 75 GHz. These chirped waveforms illuminate and reflect from the target plasma, with each frequency component reflecting from a different density layer (higher frequencies probe deeper into the plasma before reflecting). The reflected waveforms are split into roughly 42 different frequencies; time-of-flight (TOF) measurements made at each frequency with high resolution (~25 psec measurement resolution which corresponds to ~5 mm). These TOF data may then be inverted via software to generate electron density profiles with high time resolution (~10 μsec). At the heart of the system is a field programmable gate array (FPGA) based controller which collects and processes all of the USPR data in addition to generating all of the control signals required for maximum flexibility. The FPGA controller has the software flexibility to be easily reconfigured for different plasma devices, and the entire system sufficiently compact to be easily and quickly transported between devices. A high speed impulse generator was transformed into a set of three ultrashort pulse transmitter chirps using a combination of dispersive waveguide, frequency doublers and high-pass filters. A mm-wave controller was fabricated to sequentially switch between the three chirps, directing the chirps one-by-one to three different mm-wave assemblies spanning 29-75 GHz. Each mm-wave assembly consists of a high power active multiplier chain which converts the transmitter chirp to higher frequencies, and a broadband mixer which downconverts the reflected waveform to the 2-18 GHz range of the UPSR receiver. The 16-channel receiver (shared by all 3 mm-wave assemblies) was fabricated employing custom TOF modules capable of operating at a high 1 MHz sampling rate. Laboratory testing of the full system revealed the presence of unwanted harmonics from the multiplication process, with interference observed in the downconverted reflections at selected frequency channels that could not be completely filtered out. Additional interference effects arising from internal reflections within the mm-wave assemblies were minimized using a high-speed switch which served to “gate out” much of these reflections. The USPR diagnostic was transported and installed onto the HIT-SIU plasma device, becoming operational on 11/08/2022. Although designed to span 3 distinct mm-wave bands, the HIT-SIU plasmas at this time were sufficiently low density such that only the lowest of the three bands was likely to have strong plasma reflections. The system was then set to operate on only the lowest band (assembly #1), with data collected every 1 μsec rather than 3 μsec which would have been the case when cycling through all three bands. Connected to HIT-SIU, time-varying plasma reflections were observed on 9 of 16 possible frequency channels. Close examination of the data collected revealed issues previously unobserved in laboratory testing, associated with (a) reflections from the small aperture horns required for operation within the HIT-SIU device, and (b) a dependence of the recorded TOF with the threshold voltage of a given channel. Plans were made to address each of these issues before undertaking any future campaigns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High-frequency direct current bulk capacitors with interleaved busbar packages

Presented are electrical capacitors with interleaved busbar architectures, methods for making/operating such capacitors, and electric-drive vehicles equipped with such capacitors. A bulk capacitor includes multiple capacitor devices disposed within an outer housing and operable to modify electric current transmitted between a power source and an electrical load. An interleaved busbar package is interposed between the capacitor devices and outer housing. The interleaved busbar package includes a first busbar plate that electrically connects to first terminals of the capacitor devices and defines a busbar pocket. A second busbar plate is seated within the busbar pocket and electrically connects to second terminals of the capacitor devices. The second busbar plate includes a capacitor basin that seats therein the capacitor devices. An isolator sheet is interleaved between and electrically insulates the first and second busbar plates. The capacitor devices and interleaved busbar package may be partially submerged in an epoxy endfill composition.

42 ENGINEERING↗

Transactive Energy Communications Interface Standards Landscape

Transactive energy represents distributed, optimal-seeking coordination approaches for managing the operation of large numbers of energy-related devices and systems. The concept assumes intelligent agents interact with other agents on behalf of their owners to balance the supply and demand of energy and coordinate other operation services in an electric system. They do this by exchanging value signals for services in near-term and forward time periods using market mechanisms. The technique is particularly applied to coordination of flexibility in operating distributed energy resources. The integration of large numbers of devices requires that they be able to connect and interoperate easily and reliably. Given the many technologies and solution providers integrating products, communications interfaces based on clear, unambiguous specifications with supporting tests require standardization and adoption by the community of system integrators. This report reviews the state of communications interface standards that show promise for transactive energy approaches to the coordination of distributed energy resources. It reviews promising standards to highlight challenges and gaps. It offers structured comparisons between standards and the features offered by their ecosystems of participants.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Perspectives on Machine Learning-assisted Plasma Medicine: Towards Automated Plasma Treatment

Cold atmospheric plasmas (CAPs) have shown great promise for medical applications through their synergistic chemical, electrical, and thermal effects, which can induce therapeutic outcomes. However, safe and reproducible plasma treatment of complex biological surfaces poses a major hurdle to the widespread adoption of CAPs for medical applications. Predictive modeling of the mutual interactions between the plasma and biological surfaces and, thus, systematic approaches to quantify and predict plasma treatment outcomes remain largely elusive due to the lack of mechanistic understanding of plasma-surface interactions that can span across vastly different length-and time-scales. In addition, real-time sensing capabilities in biomedical CAP devices are often limited, which can be detrimental to plasma treatment due to the intrinsic plasma and surface variability during the treatment, as well as sensitivity to external perturbations. All of these challenges can make reproducible and effective plasma treatment of biological surfaces difficult to realize, which is further compounded by errors due to human operation of hand-held CAP devices. Machine learning and data-driven approaches can be particularly useful in addressing these challenges in three major ways: (i) data-driven modeling of hard-to-model plasma-surface interactions and plasma treatment outcomes; (ii) learning data analytics for plasma and surface diagnostics in real-time; and (iii) developing predictive controllers that enable reliable and effective CAP treatments. Furthermore, this paper discusses the promise of machine learning to accelerate plasma medicine research in these areas, toward machine learning-assisted and automated CAP treatment of complex biological surfaces.

60 APPLIED LIFE SCIENCES↗

Neutral gas analysis for JET DT operation

Neutral gas analysis, the measurement and evaluation of total and partial pressures, is a key technique to study the impact of neutral gas dynamics on retention, recycling and release processes of fuel or impurity species in fusion devices. At JET, the experiment closest to ITER in terms of operating parameters and size, various detectors and techniques for partial pressure and total pressure measurements are deployed together to characterise neutral gas dynamics during and after plasma operation on various toroidal and poloidal locations. An extensive modification of JET's sub-divertor neutral gas diagnostic system aims at retaining and extending established measurement capabilities in the forthcoming Deuterium-Tritium (DT) experiments (DTE2). To achieve DT compatibility, a separation of radiation-sensitive electronics from the sensor and adequate radiation shielding is required, as well as utilisation of a DT compatible differential pumping system with adjustable throughput to account for the strong pressure variation in the sub-divertor region. Finally, the sub-divertor neutral gas diagnostic will be equipped with multiple Residual Gas Analysers (RGAs), utilising quadrupole mass spectrometry and electrostatic ion-trap-principles, all operating with remote electronics located behind the biological radiation shield. These RGAs will record data in a fast selected discrete mass mode during plasma pulses (cycle ~2 s) and will automatically switch back to continuous data recording (cycle ~100 s) afterwards. They will be complemented by a newly improved Penning gauge spectroscopy configuration in particular supporting the He and D 2 separation relevant for DT operation. The distance between these devices and their associated control unit is typically 15m . A newly developed RGA with a cable length of 80 m, compatible with the ITER environment, will also be employed for the first time. Finally, this set-up and its operation in DTE2 will provide vital input to the development of the ITER divertor RGA in the most relevant environment currently available.

47 OTHER INSTRUMENTATION↗

A framework for understanding efficient diurnal CO 2 reduction using Si and GaAs photocathodes

Integrated solar fuels and photoelectrochemical (PEC) CO 2 reduction (CO 2 R) are promising pathways toward producing value-added chemicals from CO 2 . However, improvements are needed in activity and selectivity as well as in fundamental understanding of device behavior to engender wide deployment. Here, we report two single-junction, integrated photocathodes for PEC CO 2 R based on TOPCon Si and GaAs substrates, which achieve -10 mA cm -2 at -0.33 V vs. RHE with 41% selectivity to C 2+ products and at -0.03 V vs. RHE with 27% selectivity to C 2+ products, respectively. We investigated the viability of a light-mediated strategy to direct selectivity in buried-junction PEC devices and confirmed that these devices could be optimized independently and described by the physics-based models of the individual components. Finally, we designed a framework to assess operational modes for PEC CO 2 R devices and demonstrated this framework under continuous galvanostatic control and variable illumination conditions.

14 SOLAR ENERGY↗

Monte Carlo simulation analysis for radiation damage on Glidcop Al-15 caused by 17-20 MeV/u heavy ions

The Facility for Rare Isotope Beams (FRIB) SRF linear heavy-ion accelerator is designed to accelerate all ions up to uranium to a maximum beam power of 400 kW. Several beam intercepting devices (BIDs) are essential to the successful operation of the accelerator, including a low power charge selector (LPCS) made of copper containing 0.15% precipitated aluminum oxide by weight called Glidcop Al-15. As FRIB ramps up the primary beam power beyond the current 20 kW level, the charge selector must withstand higher radiation damage rates, typically measured in displacements per atom (dpa). Significant beam induced radiation damage including significant deformation, like swelling, blistering, and cracking has been observed on a recently removed LPCS. We also observed physical features up to about 5.5 mm wide and appear to be deeper than the projected range of any ions. This paper presents the results of Monte Carlo simulations carried out using the Particle and Heavy Ion Transport code System (PHITS), quantifying the total damage dose and ion concentration, etc. Simulating an accurate irradiation history is essential to determining the scope of post irradiation examination (PIE) work.

Fletcher, Ethan [Michigan State U.]↗

Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.

42 ENGINEERING↗

Ultrafast optical switching and power limiting in intersubband polaritonic metasurfaces

Highly nonlinear optical materials with fast third-order nonlinear optical response are crucial for the operation of all-optical photonic devices, such as switches for signal processing and computation, power limiters, and saturable absorbers. The nonlinear response of traditional optical materials is weak, thus requiring large light intensities to induce significant changes in their properties. Here we show that optical control of the coupling rate in subwavelength patch antennas coupled to intersubband transitions in multi-quantum-well semiconductor heterostructures can provide a giant third-order nonlinear response, on the order of 3.4 × <#comment/> 10 − <#comment/> 13 m 2 / V 2 , with a response time < <#comment/> 2 p s . We utilize this effect to realize intersubband polaritonic metasurfaces and demonstrate their operation as highly nonlinear saturable and reverse saturable absorbers, enabling optical power limiters and other elements for all-optical modulation and control. Our approach enables a plethora of compact, low-power, highly nonlinear devices with spectral, temporal, and structured wavefront responses tailored by design.

Mann, Sander A. (ORCID:0000000277420615)↗

Stingray Case Study

Improvised explosive devices (IEDs) have injured and killed numerous soldiers and civilians as a consequence of military operations in the Middle East. With gaps in existing technologies, the US military required devices for quickly addressing deadly IEDs without harming military personnel or inflicting severe damage to the environment. In response to this need, Sandia developed Stingray, a clear, plastic handheld device to quickly and safely disable threatening IEDs. Stingray is designed to be used in two configurations: a coherent water blade for cutting operations and as a water slug for general device disruption. Prior to disabling an IED, Explosive Ordnance Disposal (EOD) technicians will x-ray the target using tools such as Sandia's X-ray Toolkit (XTK) to determine which function operators should use to dismantle the IED. For example, if the operator knows exactly which wires to cut, they can use the precision water blade. If the operator wants to create a general disruption, they can use the water slug function.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

High-fidelity qutrit entangling gates for superconducting circuits

Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and error correction. Although generally operated as qubits, transmons have readily addressable higher levels, making them natural candidates for operation as quantum three-level systems (qutrits). Recent works in transmon devices have realized high fidelity single qutrit operation. Nonetheless, effectively engineering a high-fidelity two-qutrit entanglement remains a central challenge for realizing qutrit processing in a transmon device. In this work, we apply the differential AC Stark shift to implement a flexible, microwave-activated, and dynamic cross-Kerr entanglement between two fixed-frequency transmon qutrits, expanding on work performed for the ZZ interaction with transmon qubits. We then use this interaction to engineer efficient, high-fidelity qutrit CZ † and CZ gates, with estimated process fidelities of 97.3(1)% and 95.2(3)% respectively, a significant step forward for operating qutrits on a multi-transmon device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with V th < -6 V and High on-Current

In this work, a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated Al 2 O 3 is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of Al 2 O 3 . Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage < -6 V with on-current > 80 mA mm -1 . Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10 12 cm -2 and increased hole mobility of 110 cm 2 V -1 s -1 in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High power density soft x-ray GaAs photodiodes with tailored spectral response

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W mm -2 , mainly coming from hard x-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy x-ray photons absorbed near the detector surface. The p–n junction structures were grown by molecular beam epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard x-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source II. The responsivity was measured to be 0.16 A W -1 at 0.7 keV and 0.05 A W -1 at 6 keV in agreement with modeling. At higher x-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

36 MATERIALS SCIENCE↗

Push-pull circuit with driving assisted by asymmetric charge sharing

A push-pull circuit for an opto-electronic device includes: an output node; a pull-up circuit that, in operation, controls a falling edge rate of an input signal to the opto-electronic device while sharing charge with the output node; and a pull-down circuit that, in operation, controls a rising edge rate of the input signal to the opto-electronic device while sharing charge with the output node.

Zhu, Zhubiao↗

Validation of Power Distribution Models using Load Flow Analysis in an ADMS Environment

Electric utilities are facing the need for better monitoring, analysis, and control of their distribution systems. An accurate mathematical model is a key to both the development of cutting-edge, scalable model-based algorithms and the assessment of emerging technologies such as distributed energy resources (DER) for grid planning and operation. However, the constantly evolving nature of power distribution systems poses challenges to maintaining accurate models. In this paper, we propose a novel load flow based approach to validate power distribution models. Networked equipment models described according to the Common Information Model (CIM) standard and a measurement model are used to formulate the distribution load flow problem. First, a system admittance matrix (Ybus) is derived from device-level CIM parameters. Next, the operational parameters (dynamic Ybus and nodal injections) are extracted from the measurement model using sensor configuration and equipment state. An iterative power flow method is then used to compute nodal voltages and branch flows that are compared against the measurement data to find any inconsistencies in the networked equipment model. This approach is implemented within GridAPPS-D, an open-source standards-based platform for advanced distribution management system (ADMS) application development, and demonstrated on the IEEE 13-bus, 123-bus, and 8500-node test feeders.

Common information model, model validation, power ↗

Powerful Terahertz Emission from a Bi 2 Sr 2 Ca Cu 2 O 8+ δ Mesa Operating Above 77 K

Mesa-shaped structures of the high critical temperature (high-T c ) superconductor Bi 2 Sr 2 CaCu 2 O 8+δ ; contain stacked intrinsic Josephson junctions. As such, they are a promising source of coherent radiation in the "terahertz gap" range, spanning from approximately 0.3 to 2.0 THz. Technological applications of these devices become far more practical if they can be operated at a cryogenic bath temperature of 77 K or higher. Previous works have reported emission from this type of device at high terahertz power levels at lower operating temperatures, 40-60 K, while at T bath >= 77 K observed power levels have generally been low. Here we report generation of 130 mu W of coherent power at 0.456 THz from a mesa of Bi 2 Sr 2 CaCu 2 O 8+δ ; doped with 0.16 holes per Cu atom, at a bath temperature of 77.4 K. Here, we find that the device radiates terahertz power when clearly identifiable cavity modes are excited, and that the frequency and bias voltage corresponding to each of these modes is almost independent of temperature. This is consistent with these modes having terahertz-frequency electric fields with very little dependence on vertical position within the mesa. We also find that the terahertz power radiated from any given mode decreases monotonically as the mesa temperature is increased. On the other hand, the low-frequency modes become inaccessible at low temperatures due to retrapping of the intrinsic Josephson junctions, and the maximum radiation power for the emitting mode is typically achieved at the temperature at which the retrapping voltage reaches the resonance voltage for this mode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Deep Reinforcement Learning for Distribution System Operations: A Tutorial and Survey

Here, the rapid evolution of modern electric power distribution systems into complex networks of interconnected active devices, distributed generation (DG), and storage poses increasing difficulties for system operators. The large-scale integration of distributed energy resources (DERs) and the rapid exchange of measurement data via communication networks present major opportunities for advancing grid operations but also introduce greater uncertainty, higher data dimensionality, more complex network and device models, and challenging control and optimization problems. Deep reinforcement learning (DRL) algorithms are promising in addressing these challenges. However, they have not been effectively adapted for power systems applications, requiring extensive customization for implementation and evaluation. This has resulted in reproducibility challenges and a steep learning curve for researchers new to applying DRL algorithms to the power systems domain. To bridge these gaps, this tutorial aims to serve as a valuable resource for researchers interested in exploring learning-based algorithms to operate active power distribution networks. Specifically, this work presents a generalized process for translating sequential decision-making problems in power distribution systems into Markov decision process (MDP) formulations, illustrated through concrete grid service examples. Additionally, we introduce a simple environment design strategy to develop and evaluate example DRL algorithms for distribution system applications, complete with an included code repository to guide users through environment construction.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Short-depth circuits for efficient expectation-value estimation

The evaluation of expectation values Tr[$\rho \mathcal{O}$] for some pure state $\rho$ and Hermitian operator $\mathcal{O}$ is of central importance in a variety of quantum algorithms. Near-optimal techniques have been developed in the past and require a number of measurements N approaching the Heisenberg limit N = O(1/ ε) as a function of target accuracy ε. The use of quantum phase estimation (QPE) requires, however, long circuit depths C = O(1/ ε) making its implementation difficult on near-term noisy devices. The more direct strategy of operator averaging is usually preferred as it can be performed using N = O(1/ε 2 ) measurements and no additional gates aside from those needed for the state preparation. In this work we use a simple but realistic model to describe the bound state of a neutron and a proton (the deuteron) to show that the latter strategy can require an overly large number of measurements in order to achieve a prefixed relative target accuracy ε r . Further, we propose to overcome this problem using a single step of QPE and classical postprocessing. This approach leads to a circuit depth C = O (ε μ ) (with μ ≥ 0) and to a number of measurements N = O (1/ε 2 + ν ) for 0 < ν ≤ 1 and a much smaller prefactor. We provide detailed descriptions of two implementations of our strategy for ν = 1 and ν ≈ 0.5 and derive appropriate conditions that a particular problem instance has to satisfy in order for our method to provide an advantage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗