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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Testing of a Line Driver With Configurable Pre-Emphasis on Lossy Transmission Lines

Rare-event physics experiments such as the Deep Underground Neutrino Experiment (DUNE) or the next Enriched Xenon Observatory (nEXO) experiment search for rare, low-energy events, detected by sensitive detectors immersed in a cryogenic noble liquid (e.g., liquid argon or xenon). Readout electronics used within such detectors must consume minimal power while operating reliably in cryogenic environments. Furthermore, in the case of nEXO, maximizing the radiopurity of the environment is vital to minimize background noise, thus placing strict limits on the volume of dielectric materials, leading to high-loss data cables spanning distances up to 12 m. Such cables cause high attenuation and intersymbol interference (ISI), resulting in a high bit-error rate (BER). These issues were addressed by developing an integrated line driver with configurable pre-emphasis in a 65-nm CMOS process. The pre-emphasis parameters can be programmed to minimize BER for specific cables and data rates under power constraints. Here, the driver was tested at both room and cryogenic temperatures. In both cases, the output BER was found to be strongly correlated with the pre-emphasis settings. Furthermore, analysis and simulation showed that adapting the pre-emphasis settings based on the incoming bit sequence can further improve performance with minimal changes to the current solution.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

X-Ray and Particle Detection With the Si(Li) Tracker Module of the GAPS Experiment

Here, this work describes the architecture and the experimental results from the characterization of the lithium-drifted silicon (Si(Li)) detector module, which constitutes the building block of the tracker in the general antiparticle spectrometer (GAPS) experiment to search for dark matter. The instrument is designed for the identification of low-energy cosmic anti-nuclei (antiprotons, antideuterons, and antihelium) to be performed during an Antarctic long-duration balloon flight scheduled for late 2025. The GAPS Si(Li) tracker, that is the core of the instrument, is the assembly of 252 modules, each comprised of four Si(Li) detectors and a full custom-integrated circuit designed for detector readout and produced in a commercial 180-nm planar CMOS technology. A general overview of the detector module architecture and its components is provided, together with a description of the test setup and the experimental results obtained from the characterization of the low-noise analog readout channel. In order to verify the effective operation of the entire module, results concerning the detection of X-rays from a 241Am source and cosmic muons are also provided.

Manghisoni, Massimo [Università di Bergamo (Italy)↗
DOE OSTI2025

Exploration of a Combined LIBS and LA-ICP-MS Approach for Apatite Characterisation

A combined laser‐induced breakdown spectroscopy (LIBS) and laser ablation‐inductively coupled plasma‐mass spectrometry (LA‐ICP‐MS) method is demonstrated for comprehensive apatite analysis. These measurements provide elemental imaging that can be used as a screening technique for chemical selection of grains for subsequent analysis (e.g., U‐Pb geochronology) or can be used to understand elemental distributions within a single grain that would have direct textural‐chemical implications (e.g., zoning patterns). Adding LIBS as a simultaneous measurement, to LA‐ICP‐MS U‐Pb geochronology, allowed for the direct determination of F (H and O show promise for future applications) in addition to major and trace elements of interest. Here, the quantitative measurements were validated against a series of apatites with known values and used to characterise a wide range of samples. Fluorine detection limits were determined to be as low as 70 μg g ‐1 F (broadband CMOS detector) and 4.2 μg g ‐1 F (ICCD detector). U‐Pb age dating was simultaneously collected by LA‐ICP‐MS with the quantitative elemental data from LIBS, providing a comprehensive method for geochronology.

Apatite↗
DOE OSTI2022

Combined thermographic phosphor and digital image correlation (TP + DIC) for simultaneous temperature and strain measurements

We report thermographic phosphors (TP) are combined with stereo digital image correlation (DIC) in a novel diagnostic, TP + DIC, to measure full-field surface strains and temperatures simultaneously. The TP + DIC method is presented, including corrections for nonlinear CMOS camera detectors and generation of pixel-wise calibration curves to relate the known temperature to the ratio of pixel intensities between two distinct wavelength bands. Additionally, DIC is employed not only for strain measurements but also for accurate image registration between the two cameras for the two-colour ratio method approach of phosphoric thermography. TP + DIC is applied to characterize the thermo-mechanical response of 304L stainless steel dog bones during tensile testing at different strain rates. The dog bones are patterned for DIC with Mg 3 F 2 GeO 4 :Mn (MFG) via aerosol deposition through a shadow mask. Temperatures up to 425°K (150°C) and strains up to 1.0 mm/mm are measured in the localized necking region, with conservative noise levels of 10°K and 0.01 mm/mm or less. Finally, TP + DIC is compared to the more established method of combining infrared (IR) thermography with DIC (IR + DIC), with results agreeing favourably. Three topics of continued research are identified, including cracking of the aerosol-deposited phosphor DIC features, incomplete illumination for pixels on the border of the phosphor features, and phosphor emission evolution as a function of applied substrate strain. This work demonstrates the combination of phosphor thermography and DIC and lays the foundation for further development of TP + DIC for testing in combined thermo-mechancial environments.

304L stainless steel↗
DOE OSTI2022

An Experimental Investigation of Supercritical Methane Injection Characteristics in a CO2 Environment

Abstract Clean energy generation is gaining significant attention from industries, academia, and governments across the globe. The Allam cycle is one such technology that has been under focus due to its efficiency, environmental friendliness, and economics. This is a direct-fired cycle operating at supercritical conditions using carbon dioxide as a working fluid. Fuel or oxidizer jet mixing with CO2 is a vital phenomenon that governs combustion efficiency, and it is not well understood for the Allam cycle conditions. This paper experimentally investigated the jet characteristics of a methane jet injected into a subcritical to supercritical carbon dioxide environment. A wide range of injection pressures and temperatures were targeted between subcritical to supercritical conditions. Unlike previous studies, the current work focused on injecting lower-density (methane) jets into higher-density (carbon dioxide) environments. Schlieren imaging and methane absorption measurements were simultaneously performed with a CMOS high-speed camera and a 3.39 μm infrared laser. Specifically, we looked at the classical injection parameter of jet spreading angle, which was classically established to be mainly a density ratio function. Here, the jet cone angle was obtained from the postprocessed schlieren imaging. The jet cone angle is a critical characteristic parameter that describes the entrainment rate in a jet; thus, it is a crucial parameter in understanding the nature of the jet. The laser measurements were only used as an additional check to confirm the entry time of methane into the chamber filled with carbon dioxide. Notably, this paper makes a detailed comparison between the jet cone angles of jets with a density ratio. The result showed that the classical correlations, such as Abramovich's theory applied to submerged turbulent gas jets developed for low-density ratio jets, were unsuitable for higher-density ratio jets. It was also observed that the divergence angles were dependent not only on density ratio but also on other parameters such as pressure ratios and reduced pressures.

Engineering↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
DOE OSTI2022

NIR fluorescence lifetime macroscopic imaging with a time-gated SPAD camera

The performance of SwissSPAD2 (SS2), a large scale, widefield time-gated CMOS SPAD imager developed for fluorescence lifetime imaging, has recently been described in the context of visible range and fluorescence lifetime imaging microscopy (FLIM) of dyes with lifetimes in the 2.5 – 4 ns range. Here, we explore its capabilities in the NIR regime relevant for small animal imaging, where its sensitivity is lower and typical NIR fluorescent dye lifetimes are much shorter (1 ns or less). We carry out this study in a simple macroscopic imaging setup based on a compact NIR picosecond pulsed laser, an engineered diffuser-based illumination optics, and NIR optimized imaging lens suitable for well-plate or small animal imaging. Because laser repetition rates can vary between models, but the synchronization signal frequency accepted by SS2 is fixed to 20 MHz, we first checked that a simple frequency-division scheme enables data recording for different laser repetition rates. Next, we acquired data using different time gate widths, including gates with duration longer than the laser period, and analyzed the resulting data using both standard nonlinear least-square fit (NLSF) and phasor analysis. We show that the fixed synchronization rate and large gate widths characterizing SS2 (10 ns and over) are not an obstacle to accurately extracting lifetime in the 1 ns range and to distinguishing between close lifetimes. As a result, SS2 and similar very large gated SPAD imagers appear as a versatile alternative to other widefield time-resolved detectors for NIR fluorescence lifetime imaging, including preclinical molecular applications.

FLIM↗
DOE OSTI2020

Electrical power generation from moderate-temperature radiative thermal sources

Moderate-temperature thermal sources (100° to 400°C) which radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Atomic-scale polarization switching in wurtzite ferroelectrics

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because they are easily integrated with multiple mainstream semiconductor platforms. However, the electric fields required to reverse their polarization direction and unlock electronic and optical functions need substantial reduction for operational compatibility with complementary metal-oxide semiconductor (CMOS) electronics. To understand this process, we observed and quantified real-time polarization switching of a representative ferroelectric wurtzite (Al 0.94 B 0.06 N) at the atomic scale with scanning transmission electron microscopy. The analysis revealed a polarization reversal model in which puckered aluminum/boron nitride rings in the wurtzite basal planes gradually flatten and adopt a transient nonpolar geometry. Independent first-principles simulations reveal the details and energetics of the reversal process through an antipolar phase. Furthermore, this model and local mechanistic understanding are a critical initial step for property engineering efforts in this emerging material class.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Soft syndrome iterative decoding of quantum LDPC codes and hardware architectures

In practical quantum error correction implementations, the measurement of syndrome information is an unreliable step—typically modeled as a binary measurement outcome flipped with some probability. However, the measured syndrome is in fact a discretized value of the continuous voltage or current values obtained in the physical implementation of the syndrome extraction. In this paper, we use this “soft” or analog information to benefit iterative decoders for decoding quantum low-density parity-check (QLDPC) codes. Syndrome-based iterative belief propagation decoders are modified to utilize the soft syndrome to correct both data and syndrome errors simultaneously. We demonstrate the advantages of the proposed scheme not only in terms of comparison of thresholds and logical error rates for quasi-cyclic lifted-product QLDPC code families but also with faster convergence of iterative decoders. Additionally, we derive hardware (FPGA) architectures of these soft syndrome decoders and obtain similar performance in terms of error correction to the ideal models even with reduced precision in the soft information. The total latency of the hardware architectures is about 600 ns (for the QLDPC codes considered) in a 20 nm CMOS process FPGA device, and the area overhead is almost constant—less than 50% compared to min-sum decoders with noisy syndromes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

llnl/nsCamera

Driver & control software for Nanosecond Gated CMOS Cameras

Hill, JeremyMartin [Lawrence Livermore National La↗
DOE OSTI2024

Maximum Switching Throughput Density Estimator

SAND2024-11125O The Maximum Switching Throughput Density Estimator software performs a simple analysis that estimates the maximum logic switching throughput density that’s achieved in various CMOS technology nodes on the International Roadmap for Devices and Systems. This software utilizes simple device models and optimization techniques, performing a simple sweep over a range of possible logic supply voltages, and analytically calculating the maximum switching frequency for the given logic voltage that meets the power density constraint. It does this by using simple models of power dissipation in conventional and fully adiabatic switching. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

Frank, Michael↗
DOE OSTI2025

Amorphous boron nitride: synthesis, properties and device application

Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Combined EDS and EBSD dataset from TiB2 ceramic material

This is supplemental information to a paper to be submitted, tentatively titled Cluster analysis of combined EDS and EBSD data to solve ambiguous phase identifications. Data was acquired from a TiB2 ceramic provided by Missouri University of Science and Technology. Simultaneous EDS and EBSD were acquired on a Tescan MIRA3 GMH field-emission SEM equipped with Oxford Instruments Symmetry CMOS-based EBSD detector and Oxford Instruments UltimMax 170 mm2 silicon-drift detector EDS. Data was acquired using Oxford Instruments AZtec 4.0 software. Data was acquired at 20 keV, 70° tilt, and ≈1 nA probe current. An 80×60 pixel, 40×30 μm map (500 nm pixel pitch) was acquired. EBSD indexing was performed using TiB2, space group 191 P6/mmm, and TiC, space group 225 Fm \bar{3}m, crystal cards.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-bandwidth image-based predictive laser stabilization via optimized Fourier filters

Controlling the delivery of kHz-class pulsed lasers is of interest in a variety of industrial and scientific applications, from next-generation laser-plasma acceleration to laser-based x-ray emission and high-precision manufacturing. The transverse position of the laser pulse train on the application target is often subject to fluctuations by external drivers (e.g., room cooling and heating systems, motorized optics stages and mounts, vacuum systems, chillers, and/or ground vibrations). For typical situations where the disturbance spectrum exhibits discrete peaks on top of a broad-bandwidth lower-frequency background, traditional PID (proportional-integral-derivative) controllers may struggle, since as a general rule PID controllers can be used to suppress vibrations up to only about 5%–10% of the sampling frequency. Here, a predictive feed-forward algorithm is presented that significantly enhances the stabilization bandwidth in such laser systems (up to the Nyquist limit at half the sampling frequency) by online identification and filtering of one or a few discrete frequencies using optimized Fourier filters. Furthermore, the system architecture demonstrated here uses off-the-shelf CMOS cameras and piezo-electric actuated mirrors connected to a standard PC to process the alignment images and implement the algorithm. To avoid high-end, high-cost components, a machine-learning-based model of the piezo mirror’s dynamics was integrated into the system, which enables high-precision positioning by compensating for hysteresis and other hardware-induced effects. A successful demonstration of the method was performed on a 1 kHz laser pulse train, where externally-induced vibrations of up to 400 Hz were attenuated by a factor of five, far exceeding what could be done with a standard PID scheme.

Natal, Joseph↗
DOE OSTI2020

Coupling between plasmonic and photonic crystal modes in suspended three-dimensional meta-films

A complementary metal oxide semiconductor (CMOS) compatible fabrication method for creating three-dimensional (3D) meta-films is presented. In contrast to metasurfaces, meta-films possess structural variation throughout the thickness of the film and can possess a sub-wavelength scale structure in all three dimensions. Here we use this approach to create 2D arrays of cubic silicon nitride unit cells with plasmonic inclusions of elliptical metallic disks in horizontal and vertical orientations with lateral array-dimensions on the order of millimeters. Fourier transform infrared (FTIR) spectroscopy is used to measure the infrared transmission of meta-films with either horizontally or vertically oriented ellipses with varying eccentricity. Shape effects due to the ellipse eccentricity, as well as localized surface plasmon resonance (LSPR) effects due to the effective plasmonic wavelength are observed in the scattering response. The structures were modeled using rigorous coupled wave analysis (RCWA), finite difference time domain (Lumerical), and frequency domain finite element (COMSOL). The silicon nitride support structure possesses a complex in-plane photonic crystal slab band structure due to the periodicity of the unit cells. We show that adjustments to the physical dimensions of the ellipses can be used to control the coupling to this band structure. The horizontally oriented ellipses show narrow, distinct plasmonic resonances while the vertically oriented ellipses possess broader resonances, with lower overall transmission amplitude for a given ellipse geometry. We attribute this difference in resonance behavior to retardation effects. The ability to couple photonic slab modes with plasmonic inclusions enables a richer space of optical functionality for design of metamaterial-inspired optical components.

42 ENGINEERING↗
DOE OSTI2022

Ultra-low loss visible light waveguides for integrated atomic, molecular, and quantum photonics

Atomic, molecular and optical (AMO) visible light systems are the heart of precision applications including quantum, atomic clocks and precision metrology. As these systems scale in terms of number of lasers, wavelengths, and optical components, their reliability, space occupied, and power consumption will push the limits of using traditional laboratory-scale lasers and optics. Visible light photonic integration is critical to advancing AMO based sciences and applications, yet key performance aspects remain to be addressed, most notably waveguide losses and laser phase noise and stability. Additionally, a visible light integrated solution needs to be wafer-scale CMOS compatible and capable of supporting a wide array of photonic components. While the regime of ultra-low loss has been achieved at telecommunication wavelengths, progress at visible wavelengths has been limited. Here, we report the lowest waveguide losses and highest resonator Qs to date in the visible range, to the best of our knowledge. We report waveguide losses at wavelengths associated with strontium transitions in the 461 nm to 802 nm wavelength range, of 0.01 dB/cm to 0.09 dB/cm and associated intrinsic resonator Q of 60 Million to 9.5 Million, a decrease in loss by factors of 6x to 2x and increase in Q by factors of 10x to 1.5x over this visible wavelength range. Additionally, we measure an absorption limited loss and Q of 0.17 dB/m and 340 million at 674 nm. This level of performance is achieved in a wafer-scale foundry compatible Si 3 N 4 platform with a 20 nm thick core and TEOS-PECVD deposited upper cladding oxide, and enables waveguides for different wavelengths to be fabricated on the same wafer with mask-only changes per wavelength. These results represent a significant step forward in waveguide platforms that operate in the visible, opening up a wide range of integrated applications that utilize atoms, ions and molecules including sensing, navigation, metrology and clocks.

Chauhan, Nitesh↗