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At least 667 records · Page 37

RFID-Enabled Angular Position Sensing System

An angular position sensing system includes a first support with ring-shaped elements disposed thereon and spaced apart from one another in a curvilinear arrangement. Each ring-shaped element includes an electrically-conductive ring and an RFID integrated circuit electrically coupled to its electrically-conductive ring. A second support has an antenna coupled thereto that defines an electrically-conductive path commensurate in size and shape to at least a portion of the electrically-conductive ring. An interrogator transmits a signal to the antenna wherein electric current is generated along the antenna's electrically-conductive path and electromagnetic energy emanates from the antenna. Any ring-shaped element and its RFID integrated circuit energized by the electromagnetic energy generates in response a data transmission for receipt by the interrogator. A processor coupled to the interrogator derives information related to an angular position of one of the first support and second support using the data transmission.

Fink, Patrick W.↗

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗

Graph Theory and IC Component Design Analysis

Graph analysis in large integrated circuit (IC) designs is an essential tool for verifying design logic and timing via dynamic timing analysis (DTA). IC designs resemble graphs with each logic gate as a vertex and the conductive connections between gates as edges. Using DTA digital statistical correlations, graph condensation, and graph partitioning, it is possible to identify high-entropy component centers and paths within an IC design. Identification of high-entropy component centers (HECC) enables focused DTA, effectively lowering the computational complexity of DTA on large integrated circuit graphs. In this paper, a devised methodology termed IC layout subgraph component center identification (CCI) is used to identify described. CCI lowers DTA computationally complexity by condensing IC graphs into reduced subgraphs in which dominant logic functions are verified.

42 ENGINEERING↗

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic-integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time-resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three-dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch-like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

36 MATERIALS SCIENCE↗

Development of a High-Rate Front-End ASIC for X-Ray Spectroscopy and Diffraction Applications

We developed a new front-end application-specific integrated circuit (ASIC) to upgrade the Maia X-ray microprobe. The ASIC instruments 32 configurable channels that perform either positive or negative charge amplification, pulse shaping, peak amplitude, and time extraction along with buffered analog storage. At a gain of 3.6 V/fC, 1-μs peaking time, and a temperature of 248 K, an electronic resolution of 13 and 10 e- rms was measured with and without a silicon drift detector (SDD) sensor, respectively. A spectral resolution of 170-eV full-width at half-maximum (FWHM) at 5.9 keV was obtained with an 55Fe source. The channel linearity was better than ± 1% with rate capabilities up to 40 kcps. The ASIC was fabricated in a commercial 250-nm process with a footprint of 6.3 mm × 3.9 mm and dissipates 167 mW of static power.

Vernon, Emerson↗

Verification and Quantification of Single Event Effects on High Speed SRAM in Terrestrial Environments

As integrated circuits become more sensitive to charged particles and neutrons, anomalous performance due to single event effects (SEE) is a concern and requires experimental verification and quantification. The Center for Applied Radiation Research (CARR) at Prairie View A&M University has developed experiments as a participant in the NASA ER-2 Flight Program, the APEX balloon flight program and the Student Launch Program. Other high altitude and ground level experiments of interest to DoD and commercial applications are being developed. The experiment characterizes the SEE behavior of high speed and high density SRAM's. The system includes a PC-104 computer unit, an optical drive for storage, a test board with the components under test, and a latchup detection and reset unit. The test program will continuously monitor the stored checkerboard data pattern in the SW and record errors. Since both the computer and the optical drive contain integrated circuits, they are also vulnerable to radiation effects. A latchup detection unit with discrete components will monitor the test program and reset the system when necessary. The first results will be obtained from the NASA ER-2 flights, which are now planned to take place in early 1998 from Dryden Research Center in California. The series of flights, at altitudes up to 70,000 feet, and a variety of flight profiles should yield a distribution of conditions for correlating SEES. SEE measurements will be performed from the time of aircraft power-up on the ground throughout the flight regime until systems power-off after landing.

Huff, H.↗

Tale of Two Domains: Cyber - Physical

As devices and systems continue to modernize and adopt integrated circuits, the use of cyber technology to deploy an application is the expectation. This deployment through cyber assets brings new cyber risk and cybersecurity is the practice of managing this risk. Cyber-risk is constantly changing due to the speed of technology advancement and the changing quality of the adversary. Cyber-Informed Engineering (CIE) mitigates cyber-risk through engineering controls where as the traditional practice of cybersecurity mitigates cyber-risk through cybersecurity controls. By clearly defining the cyber-physical boundary, engineering controls and cybersecurity controls can clearly demonstrate their complementary nature to provide layered defenses and successfully mitigate cyber-risk through independent controls. In this paper, a layered model of device decomposition of the the cyber-physical boundary is presented to provide clarity where engineering controls are used to reduce cyber-risk within the physics, functional materials, electronic, or integrated circuit layers and where cybersecurity controls are used to reduce cyber-risk within the machine code and application layers. By implementing both traditional cybersecurity controls and engineering controls, a more holistic approach to cybersecurity is achieved in protecting modern devices and systems, as well as a clear awareness in identifying, documenting, and authorizing the system’s cybersecurity protection scheme is achieved.

42 - ENGINEERING↗

Oxygen and carbon in silicon

The properties of the early transistors were determined by the minority-carrier lifetime, as is the silicon photovoltaic solar cell. Most of the devices on the modern integrated circuits are majority carrier devices, in part to avoid this lifetime dependence. The micro-electronics industry typically starts with wafers with a minority-carrier lifetime of 1000 micro-seconds, but during device fabrication this lifetime is reduced to beflow 1 micro-second, in spite of extraordinary cleanliness and precautions. Process-induced defects (PID) include point defects, defect complexes, line defects, and bulk precipitates. One of the aspects that needs to be better understood is the nature of minority carrier recombination at line defects and at precipitates. Some of the PIDs are known to be related to the fast-diffusers of the iron-series transition elements. One of the common techniques of dealing with these elements is intrinsic gettering by the oxygen precipitates. But even in the gettered state, there may be a residual effect on the lifetime. Oxygen is an almost ubiquitous impurity in silicon and plays an important role in both integrated circuits and solar cells. The isolated oxygen interstitial is electrically inactive, but in its various aggregated forms it has a variety of electrical activities. The agglomeration and precipitation of oxygen, including impurity gettering and the complicating role of carbon, is discussed.

Corbett, J. W.↗

Development of Thermal Infrared Sensor to Supplement Operational Land Imager

The thermal infrared sensor (TIRS) is a quantum well infrared photodetector (QWIP)-based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a far-infrared imager operating in the pushbroom mode with two IR channels: 10.8 and 12 m. The focal plane will contain three 640 ~512 QWIP arrays mounted onto a silicon substrate. The readout integrated circuit (ROIC) addresses each pixel on the QWIP arrays and reads out the pixel value (signal). The ROIC is controlled by the focal plane electronics (FPE) by means of clock signals and bias voltage value. The means of how the FPE is designed to control and interact with the TIRS focal plane assembly (FPA) is the basis for this work. The technology developed under the FPE is for the TIRS focal plane assembly (FPA). The FPE must interact with the FPA to command and control the FPA, extract analog signals from the FPA, and then convert the analog signals to digital format and send them via a serial link (USB) to a computer. The FPE accomplishes the described functions by converting electrical power from generic power supplies to the required bias power that is needed by the FPA. The FPE also generates digital clocking signals and shifts the typical transistor-to-transistor logic (TTL) to }5 V required by the FPA. The FPE also uses an application- specific integrated circuit (ASIC) named System Image, Digitizing, Enhancing, Controlling, And Retrieving (SIDECAR) from Teledyne Corp. to generate the clocking patterns commanded by the user. The uniqueness of the FPE for TIRS lies in that the TIRS FPA has three QWIP detector arrays, and all three detector arrays must be in synchronization while in operation. This is to avoid data skewing while observing Earth flying in space. The observing scenario may be customized by uploading new control software to the SIDECAR.

Shu, Peter↗

MEMS Applications in Aerodynamic Measurement Technology

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.

Reshotko, E.↗

PtCoO 2 for Scaled Interconnects

Copper (Cu) interconnects are an increasingly important bottleneck in integrated circuits due to energy consumption and latency caused by the notable increase in Cu resistivity as dimensions decrease, primarily due to electron scattering at surfaces. Herein, the potential of a directional conductor, PtCoO 2 , which has a low bulk resistivity and a distinctive anisotropic structure that mitigates electron surface scattering is showcased. Thin films of PtCoO 2 of various thicknesses are synthesized by molecular beam epitaxy (MBE) coupled with a postdeposition annealing process and the superior quality of PtCoO 2 films is demonstrated by multiple characterization techniques. The thickness‐dependent resistivity curve illustrates that PtCoO 2 significantly outperforms effective Cu (Cu with TaN barriers) and Ru in resistivity below 20.0 nm with a more than 6x reduction compared to effective Cu below 6.0 nm, having a value of only 6.32 μΩ cm at 3.3 nm. It is determined that grain boundary scattering can still be improved for even lower resistivities in this material system through a combination of experiments and theoretical simulations. PtCoO 2 is therefore a highly promising alternative material for future interconnect technologies promising lower resistivities, better stability, and significant improvements in energy efficiency and latency for advanced integrated circuits.

Li, Yansong [Department of Electrical Engineering ↗

Antennas Designed for Advanced Communications for Air Traffic Management (AC/ATM) Project

The goal of the Advanced Communications for Air Traffic Management (AC/ATM) Project at the NASA Glenn Research Center at Lewis Field is to enable a communications infrastructure that provides the capacity, efficiency, and flexibility necessary to realize a mature free-flight environment. The technical thrust of the AC/ATM Project is targeted at the design, development, integration, test, and demonstration of enabling technologies for global broadband aeronautical communications. Since Ku-band facilities and equipment are readily available, one of the near-term demonstrations involves a link through a Kuband communications satellite. Two conformally mounted antennas will support the initial AC/ATM communications links. Both of these are steered electronically through monolithic microwave integrated circuit (MMIC) amplifiers and phase shifters. This link will be asymmetrical with the downlink to the aircraft (mobile vehicle) at a throughput rate of greater than 1.5 megabits per second (Mbps), whereas the throughput rate of the uplink from the aircraft will be greater than 100 kilobits per second (kbps). The data on the downlink can be narrow-band, wide-band, or a combination of both, depending on the requirements of the experiment. The AC/ATM project is purchasing a phased-array Ku-band transmitting antenna for the uplink from the test vehicle. Many Ku-band receiving antennas have been built, and one will be borrowed for a short time to perform the initial experiments at the NASA Glenn Research Center at Lewis Field. The Ku-band transmitting antenna is a 254-element MMIC phased-array antenna being built by Boeing Phantom Works. Each element can radiate 100 mW. The antenna is approximately 43-cm high by 24-cm wide by 3.3-cm thick. It can be steered beyond 60 from broadside. The beamwidth varies from 6 at broadside to 12 degrees at 60 degrees, which is typical of phased-array antennas. When the antenna is steered to 60 degrees, the beamwidth will illuminate approximately five satellites on the orbital arc. Spread spectrum techniques will be employed to keep the power impinging on the adjacent satellites below their noise floor so that no interference results. This antenna is power limited. If the antenna elements (currently 254) are increased by a factor of 4 (1024) or 16 (4096), the gain will increase and the beamwidth will decrease in proportion. For the latter two antenna sizes, the power must be "backed off" to prevent interference with the neighboring satellites. The receiving antenna, which is approximately 90-cm high, 60-cm wide, and 3.5-cm thick, is composed of 1500 phased-array elements. The system phased-array controller can control both a 1500-element receiving antenna and a 500-element transmitting antenna. For ground testing, this controller will allow manual beam pointing and polarization alignment. For normal operation, the system can be connected to the receiving antenna and the navigation system for real-time autonomous track operation. This will be accomplished by first pointing both antennas at the satellite using information from the aircraft data bus. Then, the system phased-array controller will electronically adjust the antenna pointing of the receiving antenna to find the peak signal. After the peak signal has been found, the beam of the transmitting antenna will be pointed to the same steering angles as the receiving antenna. For initial ground testing without an aircraft, the ARINC 429 data bus (ARINC Inc., Annapolis, Maryland) will be simulated by a gyro system purchased for the follow-on to the Monolithic Microwave Integrated Circuit (MMIC) Arrays for Satellite Communication on the Move (MASCOM) Project. MASCOM utilized the Advanced Communications Technology Satellite (ACTS) with a pair of Ka-band experimental phased-array antennas.

Zakrajsek, Robert J.↗

Characterization of 128 × 128 MM-PAD-2.1 ASIC: a fast framing hard x-ray detector with high dynamic range

Here, we characterize a new x-ray Mixed-Mode Pixel Array Detector (MM-PAD-2.1) Application Specific Integrated Circuit (ASIC). Using an integrating pixel front-end with dynamic charge removal architecture, the MM-PAD-2.1 ASIC extends the maximum measurable x-ray signal (in 20 keV photon units) to > 10 7 x-rays/pixel/frame while maintaining a low read noise across the full dynamic range, all while imaging continuously at a frame rate of up to 10 kHz. The in-pixel dynamic charge removal mechanism prevents saturation of the input amplifier and proceeds in parallel with signal integration to achieve deadtime-less measurements with incident x-ray rates of > 10 10 x-rays/pixel/s. The ASIC format consists of 128 × 128 square pixels each 150 μm on a side and is designed to be 3-side buttable so large arrays can be effectively tiled. Here we use both laboratory x-ray sources and the Cornell High Energy Synchrotron Source (CHESS) to characterize two single ASIC prototype detectors for both low (single x-ray) and high incident flux detection. In the first detector the ASIC was solder bump-bonded to a 500 μm thick Si sensor for efficient detection of x-rays below 20 keV, whereas the second detector used a 750 μm thick CdTe sensor for x-rays above ~20 keV.

36 MATERIALS SCIENCE↗