Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Level density”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 667 records · Page 37

Development of a Direct Neutral Density Diagnostic for Fusion Edge Plasmas

As magnetically confined plasmas progress towards ignition and long pulse experiments, measurement and control of the neutral density in the plasma edge has become a critical issue for stability, formation of transport barriers, and fueling. Recent experiments by our research group have demonstrated that is possible to use two-photon absorption laser induced fluorescence (TA-LIF) to directly measure the density of neutral hydrogen in helicon sources and in the HIT-SI3 spheromak. While those experiments validated key elements of a diagnostic system that would enable similar measurements in tokamak plasmas, they did not fully address the issue of performance optimization in the presence of intense background light at the fluorescence wavelength and they also identified a number of other issues that must be resolved before successful TALIF neutral density measurements in a tokamak are likely to be achieved. Additional specific concerns raised during design reviews with the leadership of the DIII-D tokamak facility included: the minimum detection threshold for this TALIF diagnostic (currently ~ 5 x 10 15 m -3 ) and the rate at which neutral density measurements could be obtained. Improving the system performance to reduce the minimum detection threshold and demonstrating a faster rate of density determination are required to advance this diagnostic to the level where it could be considered for implementation on a major tokamak facility in the USA. The key issues that will be addressed through additional technological development are: validation of a new, chromatic aberration-free, xenon calibration scheme; increasing the output power of the laser; and suppression of background emission at the fluorescence wavelength through optimization of the collection optics and gating of the photomultiplier detector with a goal of obtaining a minimum detection threshold of 5 x 10 14 m -3 . Another key technological development, so far only tested in helicon source experiments, is the validation of Doppler-free TALIF as a means of obtaining higher speed, calibrated, neutral density measurements in tokamak-like conditions at the full cadence of the pulsed TALIF laser. In this work, we propose to complete these technological advancements through installation and testing of our prototype TALIF system on the proto-MPEX experiment at Oak Ridge National Laboratory (ORNL). The proto-MPEX facility will provide plasma conditions similar to the edge plasma of a major tokamak experiment but with pulse lengths and pulse repetition rates ideally suited for extensive development of a TALIF neutral density diagnostic. Measurement of the absolute neutral density in the edge of a magnetically confined plasma is necessary for plasma density control; calculation of charge-exchange power losses; control of plasma-wall interactions; determination of the braking of plasma flow; determination of the fuel mixture in deuterium-tritium plasma; and understanding the dynamics of the divertor region in the plasma edge. In terms of potential impact on the worldwide fusion program, we note that in burning plasma experiments, such as ITER, a 100 mJ/pulse Doppler-free TALIF diagnostic should be capable of directly measuring the deuterium/tritium (D/T) isotope ratio in the outer 0.5 to 1.0 m of the plasma radius. The D/T ratio is a critically important parameter for the control and optimization of burning plasmas. Therefore, development of the diagnostic system proposed here is also relevant to long-term US participation in diagnostic development for large tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗

Evaluation of low-exergy heating and cooling systems and topology optimization for deep energy savings at the urban district level

District energy systems have the potential to achieve deep energy savings by leveraging the density and diversity of loads in urban districts. However, planning and adoption of district thermal energy systems is hindered by the analytical burden and high infrastructure costs. It is hypothesized that network topology optimization would enable wider adoption of advanced (ambient temperature) district thermal energy systems, resulting in energy savings. In this study, energy modeling is used to compare the energy performance of “conventional” and “advanced” district thermal energy systems at the urban district level, and a partial exhaustive search is used to evaluate a heuristic for the topology optimization problem. For the prototypical district considered, advanced district thermal energy systems mated with low-exergy building heating and cooling systems achieved a source energy use intensity that was 49% lower than that of conventional systems. The minimal spanning tree heuristic was demonstrated to be effective for the network topology optimization problem in the context of a prototypical district, and contributes to mitigating the problem’s computational complexity. The work presented in this paper demonstrates the potential of advanced district thermal energy systems to achieve deep energy savings, and advances to addressing barriers to their adoption through topology optimization.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Role of spin-orbit coupling on crystal-field splitting and phase-stability of rare-earth based layered intermetallic

Layered and incommensurate heterostructures have attracted much attention for the occurrence of superconductivity and charge density waves with the possibility of intercalating foreign atoms. However, lanthanide-based heterostructures where (Eu x Sm 1-x )S and TaS 2 are alternatively stacked have been scarcely investigated. In this work, we performed phase stability, bonding behavior and electronic-structure analysis of (Eu x Sm 1-x )TaS 3 using first-principles density-functional theory methods. Our phase stability analysis suggests 50 at.% solubility of Eu in (Eu x Sm 1-x )TaS 3 compared to Eu solubility in all proportions in cubic SmS. The instability of Eu beyond 50 at.% in (Eu x Sm 1-x )TaS 3 was attributed to higher density of Eu-4f states at the Fermi-level. Based on band position calculated from spin-orbit coupling effect, we constructed a qualitative schematic of possible crystal-field analysis. The local change in bond-length and bond-angle around Eu-S in (Eu x Sm 1-x )TaS 3 correlate well with our crystal-field analysis. We believe that quantum mechanical insights provided in this work will be useful to understand other complex heterostructures.

36 MATERIALS SCIENCE↗

Generation of gamma radiation by a subterawatt ultrashort laser pulse: optimisation of preplasma and pulse duration

We report an experimental and numerical study of the acceleration of electrons in a plasma interacting with a subterawatt laser pulse (intensity of ∼3 × 10{sup 18} W cm{sup −2} at a pulse duration of 50 fs). A preplasma layer on the surface of a molybdenum target is formed by an additional laser pulse with a duration of 8 ns and an intensity of ∼2 × 10{sup 12} W cm{sup −2}. It is shown that an increase in the laser pulse duration to 1700 fs at a constant energy (and a proportional decrease in intensity) leads to an increase in the yield of bremsstrahlung γ-radiation by more than an order of magnitude when the nanosecond pulse is ahead of the femtosecond one by 15 − 25 ns. Interferometry data and results of diagnostics of optical and γ-radiation of a plasma demonstrate that the collisional ionisation of atoms by electrons oscillating in the field of such a laser pulse plays an essential role in the formation of electron density profile. The sensitivity of the described effect to the level of amplified spontaneous emission is determined, despite the nanosecond pulse impact. Numerical simulations show that at a large pulse duration, the acceleration of electrons is stipulated by the beaking of plasma waves excited during stimulated Raman scattering of laser radiation. (paper)

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Measurement of helicon waves with phase contrast imaging on DIII-D – A theoretical feasibility study

A DIII-D high-beta H-mode discharge, with I p = 850 kA, B t = 2.1 T n e = 4 10 19 m –3 , has been designed to validate full wave modeling of helicon waves by optimizing the expected response of the Phase Contrast Imaging diagnostic. Helicon waves have been predicted to have high current drive efficiency off-axis without facing the accessibility issues of lower-hybrid waves. To test these predictions experimentally, DIII-D has recently commissioned a high-power helicon antenna. To confidently predict the behavior of helicon waves in future devices, measurements of their fundamental properties and validation against models will be essential. Phase contrast imaging (PCI) is an absolutely calibrated internal reference interferometer able to measure density fluctuations with radial wavenumbers k R between 1.5 cm –1 and 20 cm –1 . For helicon waves 2 cm –1 < k R < 10 cm –1 is expected, allowing PCI to measure their envelope and wavenumber spectrum. This makes PCI a powerful tool for the validation of state-of-the-art models, like the AORSA full wave code. AORSA is used to compute the density perturbations measured by the PCI with 2D calculations corresponding to 11 different toroidal mode numbers combined to resolve the trajectory of the helicon wave in 3D. This is necessary because the waves travel 120 degrees toroidally from the antenna to the PCI. Here, a cold plasma finite element model (CPFEM) [4] is used to predict propagation through the scrape-off layer. The result of the CPFEM model is connected to AORSA by creating an artificial Gaussian antenna on the last closed flux surface. PCI shows best results for waves with small vertical wavenumbers k z . Modeling the helicon waves for several past DIII-D experiments shows that k z is minimized if the intersection of the helicon and the PCI laser beams occurs in the midplane. For such an optimized scenario the predicted signal level is two orders of magnitude larger than the background density fluctuations arising from broadband turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impact of the built, social, and food environment on long‐term weight loss within a behavioral weight loss intervention

Abstract Background Behavioral weight loss interventions can lead to an average weight loss of 5%–10% of initial body weight, however there is wide individual variability in treatment response. Although built, social, and community food environments can have potential direct and indirect influences on body weight (through their influence on physical activity and energy intake), these environmental factors are rarely considered as predictors of variation in weight loss. Objective Evaluate the association between built, social, and community food environments and changes in weight, moderate‐to‐vigorous physical activity (MVPA), and dietary intake among adults who completed an 18‐month behavioral weight loss intervention. Methods Participants included 93 adults (mean ± SD; 41.5 ± 8.3 years, 34.4 ± 4.2 kg/m 2 , 82% female, 75% white). Environmental variables included urbanicity, walkability, crime, Neighborhood Deprivation Index (includes 13 social economic status factors), and density of convenience stores, grocery stores, and limited‐service restaurants at the tract level. Linear regressions examined associations between environment and changes in body weight, waist circumference (WC), MVPA (SenseWear device), and dietary intake (3‐day diet records) from baseline to 18 months. Results Grocery store density was inversely associated with change in weight ( β = −0.95; p = 0.02; R 2 = 0.062) and WC ( β = −1.23; p < 0.01; R 2 = 0.109). Participants living in tracts with lower walkability demonstrated lower baseline MVPA and greater increases in MVPA versus participants with higher walkability (interaction p = 0.03). Participants living in tracts with the most deprivation demonstrated greater increases in average daily steps ( β = 2048.27; p = 0.02; R 2 = 0.039) versus participants with the least deprivation. Limited‐service restaurant density was associated with change in % protein intake ( β = 0.39; p = 0.046; R 2 = 0.051). Conclusion Environmental factors accounted for some of the variability (<11%) in response to a behavioral weight loss intervention. Grocery store density was positively associated with weight loss at 18 months. Additional studies and/or pooled analyses, encompassing greater environmental variation, are required to further evaluate whether environment contributes to weight loss variability.

Tewahade, Selam↗

Experiment-modeling studies comparing energy dissipation in the DIII-D SAS and SAS-VW divertors

Recent DIII-D experiments on Small Angle Slot (SAS) divertors have confirmed that a combination of divertor closure and target shaping can enhance cooling across the divertor target and increase energy dissipation, but with significant dependence on B T (toroidal magnetic field) direction. In these novel divertors, the roles of closure, target shaping, drifts, and scale lengths are all interconnected in optimizing dissipation, with the separatrix electron density n eSEP being the key parameter associated with the level of dissipation/detachment. After modifying the original flat-targeted graphite SAS to include a V shape with a tungsten coating on the outer side of the divertor (SAS-VW), matched series of discharges were run to compare to detailed SOLPS-ITER modeling. Experimentally, when run as designed with the outer strike point at the slot vertex, SAS-VW requires nearly identical n eSEP for detachment as the original SAS, with little difference in dissipation for the new geometry. This is in contrast to (1) earlier modeling predictions that a small change of the SAS geometry to a V shape should enhance dissipation at the same n eSEP for magnetic configurations having better H-mode access (ion B × ∇B drift directed into the divertor), and (2) despite the achievement of significantly higher (2-7x) neutral pressures and compression in the SAS-VW slot. Comparisons of experimental density scans to the most recent SOLPS-ITER modeling with ExB drifts show reasonable agreement for dissipation/detachment onset when using separatrix density as the independent parameter. In order to help understand the discrepancy in modeled vs actual performance for the new configuration, additional measurements varying gas injection location and impurity injection were undertaken. In-slot D 2 gas fueling is more effective (5–22 %) in promoting detachment, in accord with modeling. In-slot impurity injection (N 2 or Ne) can yield 30 % lower core Z eff and 15 % less confinement degradation after detachment compared to main chamber puffing, as well as relatively lower tungsten leakage from the divertor. Modeling can also reproduce the improved detachment seen as the strike point moves inboard of the slot vertex. While we can explain the effects of the most important parameters causing energy dissipation in these slot divertors, it remains that many aspects of their behavior cannot be accurately modeled using state-of-art codes such as SOLPS-ITER. This is of concern for future model-driven designs utilizing similar V-shaped geometries.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Microscopic Origin of Polarization Charges at Ga N / ( Al , Ga ) N Interfaces

Ga⁢N/(Al,Ga)⁢N heterojunctions are at the heart of high-electron-mobility transistors that are being adopted for high-power and high-frequency applications. The strong polarization fields present at this interface significantly enhance the density of the two-dimensional electron gas (2DEG) that is confined on the Ga⁢ N side of the junction. The microscopic origin of these electrons has been debated over the years: after excluding that they would be contributed by bulk donors, a model that identifies surface states on the (Al, Ga)⁢N surface as the source of electrons has become widely adopted. Recently, it has become clear, however, that the measured density of surface states is insufficient to account for the high electron density in the 2DEG. Here we demonstrate, based on state-of-the-art first-principles calculations, that the source of electrons is intrinsic to the overall structure and that the negative charge in the 2DEG is balanced by fixed charge on the surface. We perform a rigorous study of polarization, using our recently developed methodology for quantifying polarization fields within the finite-sized systems that can be addressed with density-functional calculations. The results show that the electrons that appear in the 2DEG originate locally at the interface, and that the net charge at the interface is predominantly compensated by fixed charge on the surface, rather than surface states. We elucidate the source of this fixed charge and associate it with surface reconstructions or the presence of heterovalent impurities (such as oxygen). Our results force a reassessment of the impact of surface states on the density of the 2DEG: rather than serving as a supply of electrons, the surface states mainly act to pin the Fermi level. Our conclusions allow a fresh interpretation of experimental observations and allow devising guidelines for optimizing carrier densities in the 2DEG.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 10 12 cm –3 . The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10 –16 cm 2 . The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. Furthermore, this DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

14 SOLAR ENERGY↗

A Vertical GaN-Based Neutral-Pointless Three-Level Inverter for High-Performance Automotive Traction Applications

Silicon Carbide (SiC) MOSFETs have emerged as a dominant solution for electric vehicle traction inverters because of their superior power density and efficiency compared to Silicon (Si) counterparts. However, SiC devices possess inherent switching speed limitations that constrain the maximum switching frequency and hinder further power density and efficiency improvements. To address these limitations, this paper proposes a vertical Gallium Nitride (vGaN) based X-type Neutral-Pointless (NPL.X) three-level (3L) inverter for an 800V, 200 kW traction system. Integrating 700V vGaN technology within the NPL.X 3L topology enables improved drive efficiency and higher switching frequencies, resulting in enhanced power density and output power quality. To evaluate the performance benefits, this work conducts a comprehensive loss characterization of the vGaN￾based NPL.X topology, providing a direct comparison with a SiC￾based two level (2L) inverter. The results show that the proposed vGaN-based inverter achieves superior efficiency, particularly within the low-torque regions that dominate standard automotive drive cycles. The proposed vGaN-based inverter represents a critical advancement toward high-power-density and high efficiency traction drives

Halawa, Ali [Purdue Univ., West Lafayette, IN (Uni↗

Turbulence Transition in Magnetically Confined Hydrogen and Deuterium Plasmas

In this study, we discovered a turbulence transition in a large helical device. The turbulence level and turbulence-driven energy transport decrease to a specific transition density and increase above it. The ruling turbulences below and above the transition density were ion-temperature gradient (ITG) and resistive-interchange (RI) turbulences, consistent with the predictions of gyrokinetic theory and two-fluid MHD model, respectively. Isotope experiments on hydrogen (H) and deuterium (D) clarified the role of transitions. In the ITG regime, turbulence levels and energy transport were comparable in the H and D plasmas. In contrast, in the RI regime, they were clearly suppressed in the D plasma. The results provide crucial knowledge for understanding isotope effects and future optimization of stellarator and heliotron devices. Published by the American Physical Society 2024

Physics↗

Platinum Graphene Catalytic Condenser for Millisecond Programmable Metal Surfaces

Accelerating catalytic chemistry and tuning surface reactions require precise control of the electron density of metal atoms. In this work, nanoclusters of platinum were supported on a graphene sheet within a catalytic condenser device that facilitated electron or hole accumulation in the platinum active sites with negative or positive applied potential, respectively. The catalytic condenser was fabricated by depositing on top of a p-type Si wafer an amorphous HfO 2 dielectric (70 nm), on which was placed the active layer of 2–4 nm platinum nanoclusters on graphene. A potential of ±6 V applied to the Pt/graphene layer relative to the silicon electrode moved electrons into or out of the active sites of Pt, attaining charge densities more than 1% of an electron or hole per surface Pt atom. At a level of charge condensation of ±10% of an electron per surface atom, the binding energy of carbon monoxide to a Pt(111) surface was computed via density functional theory to change 24 kJ mol –1 (0.25 eV), which was consistent with the range of carbon monoxide binding energies determined from temperature-programmed desorption (ΔBE CO of 20 ± 1 kJ mol –1 or 0.19 eV) and equilibrium surface coverage measurements (ΔBE CO of 14 ± 1 kJ mol –1 or 0.14 eV). Impedance spectroscopy indicated that Pt/graphene condensers with potentials oscillating at 3000 Hz exhibited negligible loss in capacitance and charge accumulation, enabling programmable surface conditions at amplitudes and frequencies necessary to achieve catalytic resonance.

Inorganic carbon compounds↗

Transients using low-high pulsed power in inductively coupled plasmas

Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of semi-conductor devices. Pulse repetition frequencies (PRFs) of up to tens of kHz are commonly used during plasma etching for the high power densities they generate during the pulse-on period, and for their unique chemistries during the pulse-off period. The use of highly attaching halogen gases produces low electron densities during the pulse-off period, and these low density can result in instabilities, E-H transitions and ignition delays when applying power on the next pulse. To mitigate these possibilities, a low-level power environment could be maintained during “pulse-off” to moderate the minimum plasma density, therefore reducing ignition delays and enhancing plasma stability. In this work, ICPs sustained by 5 kHz pulsed power using Ar/Cl 2 mixtures at 20 mTorr were computationally investigated. For these conditions, the computed electron temperature (T e ) reaches a quasi-steady state during both the high- and low-power excitation. The model predicts that within the electromagnetic skin-depth, T e spikes to a high value during a low-to-high power modulation, and to a low value during a high-to-low power modulation. At the same time, a few cm above the substrate, there is little modulation in T e , as electron power convected from the skin depth disperses in traversing the reactor. Finally, the positive and negative spikes, and convection of transients across the reactors, are functions of power ramping time and gas mixtures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Melt-grown semi-insulating Mn:β-Ga 2 O 3 single crystals exhibiting unique visible absorptions and luminescence

In this study, several acceptor dopants have been explored in β-Ga 2 O 3 to produce semi-insulating substrates and epitaxial films. Fe and Mg make up the majority of research thus far; however, other transition metals provide potential alternatives for optimized performance. β-Ga 2 O 3 bulk single crystals were grown by the Czochralski and vertical gradient freeze methods with a nominal dopant concentration of 0.25 at. % Mn. Ultraviolet-visible-near infrared spectroscopy and photoluminescence revealed polarization- and orientation-dependent optical absorptions (pleochroism) coupled with an orange luminescence. All samples were electrically insulating, on the order of 10 9 –10 11 ohm cm at room temperature, indicative of acceptor doping. Actual dopant concentrations of the intentionally doped transition metal and background impurities were determined via glow discharge mass spectrometry, indicating the macroscale segregation behavior. High-temperature resistivity measurements indicated an experimental acceptor level of 1.7 ± 0.2 eV. Hydrogenation of samples resulted in an increase in the orange luminescence and O–H stretching modes observable in the infrared spectrum. Density functional theory calculations were performed to determine the likely site-occupancy and acceptor level of Mn in the bandgap.

36 MATERIALS SCIENCE↗

Machine learning defect properties in Cd-based chalcogenides

Impurity energy levels in the band gap can have serious consequences for a semiconductor's performance as a photovoltaic absorber. Data-driven approaches can help accelerate the prediction of point defect properties in common semiconductors, and thus lead to the identification of potential deep lying impurity states. In this work, we use density functional theory (DFT) to compute defect formation energies and charge transition levels of hundreds of impurities in CdX chalcogenide compounds, where X = Te, Se or S. We apply machine learning techniques on the DFT data and develop on-demand predictive models for the formation energy and relevant transition levels of any impurity atom in any site. The trained ML models are general and accurate enough to predict the properties of any possible point defects in any Cd-based chalcogenide, as we prove by testing on a few selected defects in mixed chalcogen compounds CdTe 0.5 Se 0.5 and CdSe 0.5 S 0.5 . The ML framework used in this work can be extended to any class of semiconductors.

density functional theory↗

Remarkable low-energy properties of the pseudogapped semimetal Be 5 Pt

We report measurements and calculations on the properties of the intermetallic compound Be 5 Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order ~ 3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperature. We argue that this unexpected behavior can be understood by a cancellation of the energy dependence of density of states and relaxation time due to disorder, and discuss a model for electronic transport. With applied pressure, the resistivity becomes semiconducting, consistent with theoretical calculations that show that the band gap increases with applied pressure. We further discuss the role of Be inclusions in the samples.

36 MATERIALS SCIENCE↗

Frustrated mixed-spin ladders: Evidence for a bond-order wave phase between rung-singlet and Haldane phases

In frustrated spin ladders, the interplay of frustration and correlations leads to the familiar Haldane (H) and rung-singlet (RS) phases. The nature of the transition between these two phases is still under debate. In this paper we tackle this issue using tools of quantum information theory. We consider frustrated mixed-spin-(1, 1/2) ladders with antiferromagnetic leg, rung and diagonal couplings, and calculate various quantities, such as the entanglement entropy (EE), the Schmidt gap, and the level degeneracy of the entanglement spectrum (ES). We use two numerical techniques, the infinite time-evolving block decimation (iTEBD) and the density matrix renormalization group (DMRG). We demonstrate that there exists an intermediate phase in which the ES levels do not exhibit the characteristic degeneracies of the H and RS phases. To understand the underlying physics in this phase, here we investigate short-range spin correlations along legs, rungs and diagonals and show that in this intermediate phase long-wavelength modulations occur, akin to bond-order waves.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗