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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

AGR-5/6/7 Fuel Fabrication Report

The U.S. Department of Energy Office of Nuclear Energy (DOE NE) and the Idaho National Laboratory (INL) Advanced Reactor Technologies (ART) Advanced Gas Reactor (AGR) Fuel Development and Qualification program (referred to as AGR Fuel program hereafter) are pursuing qualification of tristructural isotropic (TRISO) coated particle fuel for use in high temperature gas cooled reactors (HTGRs). The AGR Fuel program was established to provide a fuel qualification data set in support of the licensing and operation of an HTGR. BWX Technologies Nuclear Operations Group (BWXT-NOG) was subcontracted to fabricate the fuel for the AGR program. Several investments and innovations were realized in preparation to fabricate fuel for the AGR-5/6/7 irradiation experiments that brought fuel fabrication fully out of the laboratory and into engineering-scale operations. These included: • Increased the kernel fabrication line capacity and uniformity • Upgraded ancillary support equipment and processes for the tristructural isotropic (TRISO) coating furnace • Demonstrated efficient production of the matrix precursor powder by dry jet milling of co mingled components • Demonstrated an engineering-scale method for quick and efficient overcoating TRISO particles with the matrix precursor • Demonstrated an automated, multi cavity compacting system with a volumetric feed system • Demonstrated a combined-cycle thermal treatment furnace These changes increased production rates of some of these processes by an order of magnitude or more while eliminating the use of flammable solvents, multiple grinding and sorting operations, and the weighing out of individual die charges. Three fuel kernel lots were fabricated for production of the fuel for AGR-5/6/7. The initial lot (J52R-16-39316) was certified to fuel specifications but was not used because the kernels had a high fraction of internal fissures that caused an unacceptable fraction of the kernels to fragment when charged to the coating furnace where the TRISO coating would be deposited. Fragmented kernels increased the dispersed uranium in the particles and produced a worrisome fraction of dimpled particles with an elevated probability of in-pile failure. After some efforts to identify the cause of the fissure formation, two additional lots were produced with much lower fissure fractions, J52R-16-69317 and 69318. The latter kernel lot was a backup to the first and was not needed. Multiple kernel batches were composited to form each of the lots so as to simulate a commercial-scale operation where kernel batches would also be composited. Multiple TRISO coating runs were performed and the product characterized so that several could be composited into a TRISO lot. TRISO lot J52R-16-98005 conformed to all fuel specifications except the mean outer pyrocarbon (OPyC) layer thickness was thinner than specified. Furthermore, it was determined that the TRISO lot had a dispersed uranium fraction (DUF) that might result in the compacts not meeting the DUF specification. A review of the role of the OPyC layer and consequences of the DUF by the Technical Coordination Team and INL concluded that the fuel was acceptable for use in the AGR-5/6/7 irradiation experiment. The TRISO particles were overcoated with the matrix precursor that had been produced in a jet-milling operation. The overcoating was performed in equipment originally designed to coat pharmaceuticals. The overcoating process performed well; producing highly spherical and uniform overcoats requiring little upgrading and no recycle or rework. TRISO particles were overcoated with the matrix precursor to achieve nominal volumetric packing fractions (PFs) of TRISO particles of 25% and 40% for the irradiation experiments. The 40% PF compacts occupy the first and fifth test capsule in the test train while the inner three capsules are loaded with 25% PF compacts. The resinated graphite matrix precursor powder was a derivative of the German A3-27 matrix formulation, which differs from previous AGR irradiation campaigns that used an A3-3 formulation. Jet milling of the matrix powder precursor produced a finer mean graphite particle size than the milling operations used for the A3-3 matrix powder precursor. Changes made in the matrix formula and equipment yielded compacts with significantly higher matrix density than was attained in previous AGR irradiation campaigns. The changes in the matrix formulation and the means of milling the powders also complicated resolution of the three fuel compact defect fractions, DUF, exposed kernel fraction (EKF), and the silicon carbide defect fraction (SDF). Characterization data from BWXT-NOG had some anomalous results, so samples of the fuel compacts and overcoated TRISO particles were also analyzed by Oak Ridge National Laboratory (ORNL) to ensure that the defect fractions were accurately characterized.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Ytterbium Ion Collection on Graphite Plates

Surface characterization and analysis of the graphite collection and strike plates was conducted in this report. These plates were from an electromagnetic isotope separation collector that had been irradiated with an ytterbium ion beam. The results of this study are reported along with analysis and discussion of the potential growth mechanism of the ytterbium layer on graphite. It is proposed that directional deposition of ytterbium ions occurs first in the defect regions of the graphite plate. As deposition continues, it leads to the eventual formation of directional globs that elongate and grow into plates, then stacks, and finally into sheets of ytterbium. The ytterbium layer appears to have a definite phase boundary with the graphite layer. It was also determined that during irradiation with the ytterbium ion beam, the sputtered carbon becomes interpolated in the ytterbium surface layer on the graphite plate and has an amorphous microstructure.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Proton-Radiation Tolerant All-Perovskite Multijunction Solar Cells

Radiation-resistant but cost-efficient, flexible, and ultralight solar sheets with high specific power (W g -1 ) are the "holy grail" of the new space revolution, powering private space exploration, low-cost missions, and future habitats on Moon and Mars. Herein, this study investigates an all-perovskite tandem photovoltaic (PV) technology that uses an ultrathin active layer (1.56 micrometers) but offers high power conversion efficiency, and discusses its potential for high-specific-power applications. This study demonstrates that all-perovskite tandems possess a high tolerance to the harsh radiation environment in space. The tests under 68 MeV proton irradiation show negligible degradation (<6%) at a dose of 10 13 p + cm -2 where even commercially available radiation-hardened space PV degrade >22%. Using high spatial resolution photoluminescence (PL) microscopy, it is revealed that defect clusters in GaAs are responsible for the degradation of current space-PV. By contrast, negligible reduction in PL of the individual perovskite subcells even after the highest dose studied is observed. Studying the intensity-dependent PL of bare low-gap and high-gap perovskite absorbers, it is shown that the V OC , fill factor, and efficiency potentials remain identically high after irradiation. Radiation damage of all-perovskite tandems thus has a fundamentally different origin to traditional space PV.

14 SOLAR ENERGY↗
DOE OSTI2021

Multimodal X-ray Microscopy: The Kinetics of Cu in CdTe Absorbers

The behavior of solar cells is very often limited by inhomogeneously distributed nanoscale defects. This is the case throughout the entire lifecycle of the solar cell, from the distribution of elements and defects during solar cell growth as well as the charge-collection and recombination during operation, to degradation and failure mechanisms due to impurity diffusion, crack formation, and irradiation- and heat-induced cell damage This has been known for a while in the field of crystalline silicon, but inhomogeneities are far more abundant in polycrystalline materials, and are the limiting factor in thin-film solar cells where grain sizes are often on the order of the diffusion length. We showed that the high penetration of hard X-rays combined with the high sensitivity to elemental distribution, structure, and spatial resolution offers a unique avenue for highly correlative studies at the nanoscale. We presented results on Cu-doped CdTe, where carrier collection is directly correlated to the kinetics of Cu inside the absorber and the particular Cu-phases at the ZnTe/CdTe interface. We complemented the results with modeling using PVRD-FASP and PyCDTS, where the X-ray beam induced profile can be reproduced by the equilibrium defect concentrations proposed by the solvers.

Bertoni, Mariana↗
DOE OSTI2021

Edge-Mediated Annihilation of Vacancy Clusters in Monolayer Molybdenum Diselenide (MoSe 2 ) under Electron Beam Irradiation

Here annihilation of vacancy clusters in monolayer molybdenum diselenide (MoSe2) under electron beam irradiation is reported. In situ high-resolution transmission electron microscopy observation reveals that the annihilation is achieved by diffusion of vacancies to the free edge near the vacancy clusters. Monte Carlo simulations confirm that it is energetically favorable for the vacancies to locate at the free edge. By computing the minimum energy path for the annihilation of one vacancy cluster as a case study, it is further shown that electron beam irradiation and pre-stress in the suspended MoSe2 monolayer are necessary for the vacancies to overcome the energy barriers for diffusion. The findings suggest a new mechanism of vacancy healing in 2D materials and broaden the capability of electron beam for defect engineering of 2D materials, a promising way of tuning their properties for engineering applications.

2D materials↗
DOE OSTI2025

Characterization of proton-induced damage in thick, p-channel skipper-CCDs

Here, in this work, we characterize the radiation-induced damage in two thick, p-channel skipper-CCDs irradiated unbiased and at room temperature with 217-MeV protons. We evaluate the overall performance of the sensors and demonstrate their single-electron/single-photon sensitivity after receiving a fluence on the order of 10 10 protons/cm 2 . Using the pocket-pumping technique, we quantify and characterize the proton-induced defects from displacement damage. We report an overall trap density of 0.134 traps/pixel for a displacement damage dose of 2.3 × 10 7 MeV/g. Three main proton-induced trap species were identified, V 2 , C i O i and V n O m , and their characteristic trap energies and cross sections were extracted. We found that while divacancies are the most common proton-induced defects, C i O i defects have a greater impact on charge integrity at typical operating temperatures because their emission-time constants are comparable or larger than typical readout times. To estimate ionization damage, we measure the characteristic output transistor curves. We found no threshold voltage shifts after irradiation. Our results highlight the potential of skipper-CCDs for applications requiring high-radiation tolerance and can be used to find the operating conditions in which effects of radiation-induced damage are mitigated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Revealing the synergistic effects of sequential and simultaneous dual beam irradiations in tungsten via in-situ TEM

Elucidating the synergistic effects of different energetic beams on the radiation response of nuclear materials is critical for developing an improved methodology for their evaluation when exposed to extreme environments. This article describes in-situ sequential (He implantation followed by Kr irradiation and vice-versa) and simultaneous (heavy ion Kr irradiation and He implantation) dual beam irradiations performed on tungsten at 1223 K. Dislocation loop density, average area, and total loop damage as a function of irradiation history and dose/fluence are quantified. The loop Burgers vectors and cavity damage (cavity density, size and total change in volume) are also determined at the final maximum dose for each condition. The loop damage evolution was different in all cases, with the smallest loop damage observed in the simultaneous experiment. Annihilation of Kr generated dislocation loops during He implantation in the Kr + He experiment was an unanticipated observation that may be explained by the dynamic evolution of dislocation loop sink strengths and time-dependent defect fluxes. Dislocation loop raft formation, denuded zones near extended defects, and cavity damage are compared across the different conditions. The phenomena observed and discussed in this work will stimulate further experimental and computational modeling activities leading to improved fundamental understanding of the irradiation response of nuclear materials under reactor-similar environments.

36 MATERIALS SCIENCE↗
DOE OSTI2020

α Irradiation Response on the Electronic Transport Properties of p -B 12 P 2

B 12 P 2 , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport properties of B 12 P 2 has not been studied. We report electrical transport measurements on B 12 P 2 after α irradiation. The temperature-dependent Hall effect was measured on p-type B 12 P 2 after successive α irradiation from 210 Po over a fluence range of 1 × 10 11 –1 × 10 13 α/cm 2 to test for self-healing of B 12 P 2 to α bombardment. Prior to irradiation, B 12 P 2 displayed electrical transport characteristics of both hopping and impurity/defect band conduction due to background impurities and growth-induced defects. Fluences of 5 × 10 12 α/cm 2 or greater caused a decrease in the hole mobility and an increase in defect band conduction, suggesting defect accumulation in B 12 P 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Enhanced tunability of two-dimensional electron gas on SrTiO 3 through heterostructuring

Two-dimensional electron gases (2DEGs) on the SrTiO 3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. In this paper, we report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO 3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O 2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Radiation damage in tungsten under high-energy He-ion irradiation

Tungsten (W) is a primary candidate for plasma-facing components (PFCs) in fusion reactors and hybrid fission-fusion reactors. However, W suffers from severe microstructural damage under Helium (He) ion irradiation in operation conditions. Key irradiation parameters, including incident ion energy, fluence, and irradiation temperature, are known to determine the formation of He bubbles and dislocation loops, which ultimately lead to the degradation of mechanical properties, such as radiation hardening and ductile-to-brittle transition temperature (DBTT) shifts. Various strategies, for instance, interface engineering and alloying, have been developed to enhance He irradiation tolerance in W to address these challenges. Studies in the recent two decades have enhanced the understanding of the underlying mechanisms that drive defect evolution and mechanical performance degradation, thereby offering more insights into the design of more resilient W-based materials for extreme environments.

Liu, Yinghang [Purdue University]↗
DOE OSTI2024

In-Situ Characterization Tools for Evaluating Radiation Tolerance and Elemental Migration in Perovskites

This paper discusses the in-situ characterization tools designed to assess radiation tolerance and elemental migration in perovskite materials. With the increasing use of perovskites in various technological applications, understanding their response to radiation exposure is paramount. Ion Beam Induced Charge (IBIC) emerges as a powerful tool for investigating the radiation tolerance of perovskites at the microscale. By employing focused ion beams, IBIC allows for the spatial mapping of charge carriers, offering insights into the material's electronic response to radiation-induced defects. This technique enables researchers to pinpoint areas of enhanced or suppressed charge collection, providing valuable information on the perovskite's intrinsic properties under irradiation. Rutherford Backscattering Spectrometry (RBS) complements the study by offering a quantitative analysis of elemental migration in perovskite materials. Through the precise measurement of backscattered ions, RBS provides a detailed understanding of the elemental composition and distribution within the perovskite lattice after radiation exposure. The integration of IBIC and RBS techniques in in-situ experiments enhances the comprehensive characterization of radiation effects on perovskites.

ion beams↗
NASA NTRS1975

Radiation effects on beta 10.6 of pure and europium doped KCl

Changes in the optical absorption coefficient as a result of X-ray and electron bombardment of pure KCl (monocrystalline and polycrystalline), and divalent europium doped polycrystalline KCl were determined. The optical absorption coefficients were measured by a constant heat flow calorimetric method. Both 300 KV X-irradiation and 2 MeV electron irradiation produced significant increases in beta 10.6, measured at room temperature. The X-irradiation of pure moncrystalline KCl increased beta 10.6 by 0.005/cm for a 113 MR dose. For an equivalent dose, 2 MeV electrons were found less efficient in changing beta 10.6. However, electron irradiation of pure and Eu-doped polycrystalline KCl produced marked increases in adsorption. Beta increased to over 0.25/cm in Eu-doped material for a 30 x 10 to the 14th power electrons/sq cm dose, a factor of 20 increase over unirradiated material. Moreover, bleaching the electron irradiated doped KCl with 649 m light produced and additional factor of 1.5 increase. These findings will be discussed in light of known defect-center properties in KCl.

Grimes, H. H.↗
NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗
NASA NTRS1987

Effect of 1.0 MeV electron irradiation on shunt resistance in Si-MINP solar cells

Shunt resistance from 100 K to 400 K is compared for diffused and ion implanted cells before and after irradiation. R sub sh decreases from greater than 10 to the 7th power omega-square cm for T less than 250 K to 10 to the 4th power omega-square cm at 400 K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R sub sh for T greater than 250 K. Ion implanted cells exhibit a similar trend except that R sub sh is significantly less for T less than 250 K and is more sensitive to irradiation at these low temperatures. The mechanism of R sub sh appears to be a combination of multistep tunneling and trapping - detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R sub sh.

Anderson, Wayne A.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
DOE OSTI2021

Synthesis and ion-irradiation tolerance of the Dy2TiO5 polymorphs

In developing improvements in nuclear fuels, work has been conducted in replacing boron with lanthanides to act as neutron absorbent materials. To further this development for the first time the three major polymorphs of Dy2TiO5 have been fabricated as bulk, single-phase materials in a systematic study. Crystal structure refinement has been carried out from powder x-ray diffraction data, with further structural detail attained via electron diffraction. A cubic phase, defect-pyrochlore, Fd-3m space group, was found with cell parameter a = 10.2996 (1) angstrom and oxygen x48f positional parameter = 0.331 (1). Dy2TiO5 was also fabricated as a bulk, single-phase compound with hexagonal symmetry, P6(3)/mmc space group, with cell parameters a = b = 3.6307(2), c = 11.8963(8) angstrom. The radiation response for each of the polymorphs has been investigated in-situ via 1 MeV Kr - ion-irradiation and transmission electron microscopy characterisation at the IVEM-TANDEM facility, Argonne National Laboratory. Critical temperatures, T-c, for maintaining crystallinity during irradiation were determined and showed Dy2TiO5 with either orthorhombic or cubic symmetry to perform the best, with the lowest T-c values of 711 and 761 K respectively when compared with the hexagonal form. These relatively low T-c values may be attributed to different characteristics for each phase; high anti-site defect formation energy for the orthorhombic symmetry, and the ability to accommodate disorder for the cubic symmetry.

Burnable poison↗