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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

30-cm mercury ion thruster performance with a 1 kW capacitor-diode voltage multiplier beam supply

A 1 kW Solar Array and Capacitor-Diode Voltage Multiplier Converter (S/A-CDVM) has been successfully integrated with a 30 cm-diameter mercury ion thruster system to provide ion beam power. Measurements were made to compare steady state and transient response performance of a conventional bridge converter with the S/A-CDVM converter used for the ion beam supply. The ability to recover from screen to accelerator arcs and promptly re-establish stable thruster performance was demonstrated. Solar array transient response to thruster arcing was also measured.

Terdan, F. F.↗
NASA NTRS1978

Diode laser spectra of CC12F2 near 10.8 microns; air-broadening effects

A tunable diode laser absorption spectrometer with resolution of about 0.0001/cm was used to record air-broadened spectra of CC12F2 in two regions near 922.8/cm and 921.7/cm. In the 922.8/cm region the structure shows good intensity contrast at pressures corresponding to upper atmospheric pressures. The absorption features have a spacing of 0.014/cm, which is sufficiently wide to retain spectral structure at pressures as high as 48 torr or altitudes as low as 19 km. The apparent broadening is 2 MHz/torr. The single-line broadening coefficient for CC12F2 can be estimated to be 8 + or - 2 MHz/torr FWHM. In the 921.7/cm region the high-resolution structure is discernible up to 24 torr, but the intensity contrast is not sufficiently strong to be of use in analysis of stratospheric spectra.

Jennings, D. E.↗
NASA NTRS1978

Saturated absorption in NH3 demonstrated using a tuneable diode laser

Saturation of molecular transitions using a tunable diode laser has been demonstrated for the first time using a standing-wave-cavity configuration with the laser beam focused at the sample. Observed saturation effects in NH3 transitions near 888 kaysers include sub-Doppler (Lamb-dip) resonances at the line center.

Jennings, D. E.↗
NASA NTRS1979

Optically coupling tunable diode lasers

Proposed opticle coupling, using lenses and mirrors that replace complex mechanical systems, can combine separate tunable diode laser outputs and expand wavelength range. Method uses single cooler housing and requires no moving parts within cooler assembly.

Robinson, D. M.↗
NASA NTRS1980

JANTX/N759A voltage regulating diode

Diodes manyfactured by Texas Instruments and Siemens performed well in group I testing. Failure analysis shows that group II testing is most detrimental to both sample lots. Same failure mode of excessive I(sub) R leakage can be clearly seen in group III testing.

Source record↗
NASA NTRS1980

JANTX/N937B Zener diode

Zener diodes manufactured by Motorola and Siemens were tested. Apparent failure mode in all three groups was B (sub) V (Zener-breakdown-voltage) minimum failure. Both manufacturers had apporximately same amount of failure in each testing.

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NASA NTRS1980

JANTX/N98B Zener diode

Tested diodes were manufactured aby Motorola and Siemens. Both sample lots performed well in groups 1 and 3 testing. Group 2 testing was most detrimental of three groups. Extreme heat was big factor in failure mode.

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NASA NTRS1980

JANTX/N1202A switching diode

General Electric and International Rectifier switching diodes were tested. Group 2 testing proved to be most damaging to both lots. In group 2 testing many visual failures were seen in samples from both manufacturers.

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NASA NTRS1980

JANTX1N4570A zener diode

Siemens and Motorola diodes were tested. Of three stress groups, group 2 prove to be most detrimental to both sample lots.

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NASA NTRS1980

JANTX1N5417 diode

Tested diodes were manufactured by Micro Semiconductor and Semtech. Significant damage occurred only in group 1 testing.

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NASA NTRS1980

JANTX1N5550 switching diode

Tested devices were manufactured by Semtech and Micro Semiconductor. Failure rate of Semtech diodes exceeded 50% in all three test groups. Failure mode could not be precisely determined.

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NASA NTRS1980

JANTX1N5552 switching diode

Switching diodes manufactured by Micro Semidonductor and Semtech were tested. In groups 2 and 3 there were no Micro Semiconductor catastrophic failures. Testing of both lots was stopped in group 1 test because of 50% failure rate.

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NASA NTRS1980

JANTX1N5554 switching diode

Micro Semiconductor and Semtech diodes were tested. In group 1 tests Micro Semiconductor and Semtech lot testing was stopped because of excess failure rate. Failure analysis was performed on group 1 and 3 because of apparent failure mode.

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NASA NTRS1980

JANTX1N5615 switching diode

Diodes manufactured by Semtech and Micro Semiconductor were tested. Both sample lots exceeded 50% fail-rate in all groups. Failure analysis was performed for groups 2 and 3.

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NASA NTRS1980

JANTX1N5618 switching diode

Diodes tested were manufactured by Semtech and Micro Semiconductor. Semtech sample lots completed all three testings with only one catastrophic failure. All three Micro Semiconductor lots had several failure that were submitted for failure analysis.

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NASA NTRS1980

JANTX1N5619 diode

Tested diodes were manufactured by Semtech and Micro Semiconductor. Failures were experienced in groups 1 and 2 testing.

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NASA NTRS1978

Diode step stress program, JANTX1N981B

Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device was determined. Control units were maintained for verification of the electrical parametric testing. Results are reported.

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NASA NTRS1979

Diode step stress program for JANTX1N5554

Data were compiled for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices. The switching diode JANTX1N5554 is examined.

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