Identifying different stacking sequences in few-layer CVD-grown Mo S 2 by low-energy atomic-resolution scanning transmission electron microscopy
We present that atomically thin MoS 2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS 2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS 2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS 2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS 2 . Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.