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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗
NASA NTRS1973

Method and apparatus for measuring solar activity and atmospheric radiation effects

A radiometric measuring system is described for observing solar activity, atmospheric attenuation, and atmospheric emission. Two highly directional microwave antennas are mounted side by-side on an equatorial mount which tracks the sun. One antenna is aimed directly at the sun to provide a sun temperature, and the other antenna is aimed at a slight angle to the sun antenna to provide a sky temperature reference. Signals from the two antennas are compared in a radiometric detecting system and provide information concerning solar activity and atmospheric attenuation and emission.

Haroules, G. G.↗
NASA NTRS1974

Research study on high energy radiation effect and environment solar cell degradation methods

The most detailed and comprehensively verified analytical model was used to evaluate the effects of simplifying assumptions on the accuracy of predictions made by the external damage coefficient method. It was found that the most serious discrepancies were present in heavily damaged cells, particularly proton damaged cells, in which a gradient in damage across the cell existed. In general, it was found that the current damage coefficient method tends to underestimate damage at high fluences. An exception to this rule was thick cover-slipped cells experiencing heavy degradation due to omnidirectional electrons. In such cases, the damage coefficient method overestimates the damage. Comparisons of degradation predictions made by the two methods and measured flight data confirmed the above findings.

Horne, W. E.↗
NASA NTRS1975

Radiation effects on beta 10.6 of pure and europium doped KCl

Changes in the optical absorption coefficient as a result of X-ray and electron bombardment of pure KCl (monocrystalline and polycrystalline), and divalent europium doped polycrystalline KCl were determined. The optical absorption coefficients were measured by a constant heat flow calorimetric method. Both 300 KV X-irradiation and 2 MeV electron irradiation produced significant increases in beta 10.6, measured at room temperature. The X-irradiation of pure moncrystalline KCl increased beta 10.6 by 0.005/cm for a 113 MR dose. For an equivalent dose, 2 MeV electrons were found less efficient in changing beta 10.6. However, electron irradiation of pure and Eu-doped polycrystalline KCl produced marked increases in adsorption. Beta increased to over 0.25/cm in Eu-doped material for a 30 x 10 to the 14th power electrons/sq cm dose, a factor of 20 increase over unirradiated material. Moreover, bleaching the electron irradiated doped KCl with 649 m light produced and additional factor of 1.5 increase. These findings will be discussed in light of known defect-center properties in KCl.

Grimes, H. H.↗
NASA NTRS1975

Radiation effects on beta /10.6/ of pure and europium doped KCl

Changes in the optical absorption coefficient as the result of X-ray and electron bombardment of pure monocrystalline and polycrystalline KCl and of divalent europium doped polycrystalline KCl were determined. A constant heat flow calorimetric method was used to measure the optical absorption coefficients. Both 300 kV X-ray irradiation and 2 MeV electron irradiation produced increases in the optical absorption coefficient at room temperature. X-ray irradiation produced more significant changes in pure monocrystalline KCl than equivalent amounts of electron irradiation. Electron irradiation of pure and Eu-doped polycrystalline KCl produced increases in the absorption by as much as a factor of 20 over untreated material. Bleaching of the electron-irradiated doped KCl with 649 millimicron light produced a further increase.

Grimes, H. H.↗
NASA NTRS1980

Measuring radiation effects on MOS capacitors

Electron injection technique serves as powerful probe of trapped hole distribution after irradiation because it was determined that electrons only annihilate trapped holes. Other effects, such as other electron traps and interface state generation, are negligible in injection range used. Trap cross sections and densities indicate at least three trap species; interfacial species, dominant bulk species determined to tail off from silicon interface, and lower density and cross section species that may be distributed throughout bulk of oxide.

Bakowski, M.↗
NASA NTRS1982

Radiation effects studies for the high-resolution spectrograph

The generation and collection of charge carriers created during the passage of energetic protons through a silicon photodiode array are modeled. Pulse height distributions of noise charge collected during exposure of a digicon type diode array to 21 and 75 MeV protons were obtained. The magnitude of charge collected by a diode from each proton event is determined not only by diffusion, but by statistical considerations involving the ionization process itself. Utilizing analytical solutions to the diffusion equation for transport of minority carriers, together with the Vavilov theory of energy loss fluctuations in thin absorbers, simulations of the pulse height spectra which follow the experimental distributions fairly well are presented and an estimate for the minority carrier diffusion length L sub d is provided.

Smith, L. C.↗
NASA NTRS1982

Radiative effects of the El Chichon volcanic eruption. Preliminary results concerning remote sensing

The aerosols and gases resulting from the El Chichon volcanic eruption had, and may still have, significant effects on satellite measurements of the properties of the Earth's atmosphere. The sea surface temperature measured by the AVHRR was biased up to -2.5 C for many months. The total amount of ozone derived from TOMS with a standard algorithm was greatly in excess of the possible value. This apparent excess can now be explained in terms of additional absorption by SO2. Infrared temperature sounders have observed both positive and negative anomalies. These effects and others on many satellite measurements are addressed following a discussion of the history and composition of the ejecta remaining in the stratosphere. Finally, recommendations are made for further study to account for the effects of volcanic eruptions on satellite observations and for use of such observations to measure the characteristics of the ejecta.

Bandeen, W. R.↗
NASA NTRS1983

Incorporating geometric and radiative effects into infrared scanning computer analysis

A NASA program, the SILTS experiment (Shuttle Infrared Leeside Temperature Sensing) will utilize an infrared scanning system mounted at the tip of the vertical stabilizer to remotely measure the surface temperature of the leeside of the Space Shuttle during entry from orbit. Scans of the fuselage and one wing will be made alternately. The experiment will correlate real full scale data to ground-based information. In order to quantitatively assess the temperature profile of the surface, an algorithm is required which incorporates the Space Shuttle shape, location of specific materials on the surface, and the measurement geometry between the camera and the surface. This paper will discuss the algorithm.

Myrick, D. L.↗
NASA NTRS1987

Radiation effects on power transistor performance

The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and high current I sub c vs. V sub ec curves were obtained to evaluate gain degradation at high power levels. Pre- and post-irradiation high current switching tests were performed to evaluate the response. The gamma ray damage work done at Sandia was correlated with the neutron work done at the O.S.U. reactor with the above specified transistors. Theoretical analyses of damage and electrical performance were conducted in terms of semiconductor physics. The experimental high current pulser was improved in order to measure switching time changes which are less than one microsecond at currents of 100 to 200 amperes for in-situ testing.

Frasca, Albert J.↗