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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Technical Performance and Cost Optimization of Unobtrusive Multi-static Serial LiDAR Imager (UMSLI) for Wide-area Surveillance and Identification of Marine Life at Marine Energy Installations

Florida Atlantic University developed an underwater optical monitoring system prototype - Unobtrusive Multi-static Serial LiDAR Imager (UMSLI) - suitable for marine energy full project lifecycle observation (baseline, commissioning, and decommissioning), with an automated real-time classification of marine animals. With precursor 2014 DOE funding (award DE-EE0006787), a prototype UMSLI was demonstrated in a controlled laboratory environment and achieved a TRL 6. This EERE DE-EE0007828 award aimed to both increase the TRL of the UMSLI by improving the technology performance (e.g., increase distance of marine animal target detection capability, add additional species classification capabilities, improve the system performance during the day, etc.) and reduce the cost. The UMSLI presents a novel application of underwater distributed Light Detection And Ranging (LiDAR), an advanced remote sensing method that uses light in the form of laser pulses for an application, this paired with an algorithm provides 360 degrees underwater detection, imaging, and classification of marine life. This solution for underwater monitoring of biota preserves the advantages of traditional optical and acoustic solutions while overcoming many associated disadvantages for marine energy site environmental monitoring, such as difficulties in species detection and classification in low light or night and turbid environments. This new approach is a purposefully designed, reconfigurable adaptation of an existing class 3B laser technology into one UMSLI instrument that can be easily mounted on or around different classes of marine energy equipment, such as devices to capture ocean current energy or wave energy. The system uses relatively low average power, utilizes far-red (> 635nm) laser illumination to be invisible and eye-safe to marine animals, is compact, and cost-effective. The equipment is designed for long-term, maintenance-free operations (i.e., current design is targeting more than 7 days continuous operation), to inherently generate a sparse primary dataset that only includes detected anomalies, and to allow robust real-time automated animal classification and identification with a low data bandwidth requirement. The technology’s overarching goal for application, is a system that can be deployed to collect pre-installation baseline species observations at a proposed marine energy deployment site with minimal post-processing overhead. The envisioned system will also produce high-resolution imagery of marine animals through a wide range of conditions and support automated tracking and notification of the presence of managed animals within established perimeters of marine energy equipment to satisfy deployed marine energy projects’ endangered and threatened species monitoring requirements. Through the current project, we demonstrated the UMSLI prototype in an operational environment and increased the UMSLI’s Technology Readiness Level from 6 to 7. The project resulted in many novel technologies, including: 1) an eye-safe red laser based, low-cost LiDAR system that can detect targets up to 10 meters distance; 2) the GAN-based machine learning underwater LiDAR image enhancement technique (this is the first known application of GAN technique in underwater LiDAR); 3) LiDAR-based real-time automated detection capabilities; and 4) a template matching based automated classification tool. These technologies build a solid foundation for future efforts to develop an extended range electro-optical monitoring system suitable for marine energy deployments. In addition to technology development, a key lesson learned is that addressing regulatory and safety requirements must be front and center in any marine energy monitoring applications.

16 TIDAL AND WAVE POWER↗
DOE OSTI2022

Generative adversarial networks for ensemble projections of future urban morphology

As city planners design and adapt cities for future resilience and intelligence, interactions among neighborhood morphological development with respect to changes in population and resultant built infrastructure's impact on the natural environment must be considered. For deep understanding of these interactions, explicit representation of future neighborhoods is necessary for future city modeling. Generative Adversarial Networks (GANs) have been shown to produce spatially accurate urban forms at scales representing entire cities to those at neighborhood and single building scale. Here we demonstrate a GAN method for generating an ensemble of possible new neighborhoods given land use characteristics and designated neighborhood type.

Dumas, Melissa↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗
NASA NTRSDate not supplied

Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment

The feasibility of Ka-band gallium nitride (GaN) based high power amplifier (HPA) for signal amplification in extreme planetary environment is investigated and its measured performance is presented. The data includes Pout, PAE, EVM for several waveforms and data rates, output spectrum, IMD, Noise Figure, and Gain. The data indicates excellent overall performance. Potential application of this HPA includes communication systems required to operate in the extreme hot environment of Mercury and Venus, extreme cold and high radiation environment of Jupiter’s icy moons, and Artemis missions that involve human/robotic exploration and long-term presence on the Moon.

Gallium Nitride↗
DOE OSTI2022

Nanoindentation mapping defects filtration for heterogeneous materials using generative adversarial networks

Advanced composite materials with multiple phases and heterogeneous microstructure necessitate spatial mapping characterization of elastic modulus to develop constitutive relations and overall mechanical response. Such modulus mapping can be obtained using the nanoindentation technique, where the indenter tip raster over the selected microstructure region. Typically, a surface preparation procedure is done in the specimens to ensure proper contact between the indenter tip and sample surface. However, a near-perfect surface finish is unachievable in heterogeneous materials, primarily with ceramic reinforcements, due to the differential material removal rate during polishing. Thus, the nanoindenter records localized erroneous measurements due to differences in surface roughness and corresponding force response. This study establishes a novel deep learning-based strategy to rectify incorrect experimental spatial measurements acquire during nanoindentation modulus mapping. Here, the integrated bicubic interpolation and generative adversarial networks (GANs) model was trained using 14 ceramic and 18 metallic data sets, each comprising 65,536 measurements. The developed algorithm was validated against experimental measurements on four unknown specimens. The standard deviation in measured elastic modulus reduces by ~50% in ceramics and ~72% in metallic samples. This computational framework proposes a novel approach to reducing uncertainty in materials’ properties using state-of-the-art computer vision techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power devices; however, defects in the substrate growth and manufacturing are preventing vertical devices from performing optimally. This paper explores the application of machine learning techniques utilizing data obtained from optical profilometry as input variables to predict the probability of a wafer meeting performance metrics, specifically the breakdown voltage (V bk ). By incorporating machine learning techniques, it is possible to reliably predict performance metrics that cause devices to fail at low voltage. For diodes that fail at a higher (but still below theoretical) breakdown voltage, alternative inspection methods or a combination of several experimental techniques may be necessary.

42 ENGINEERING↗
DOE OSTI2021

Low voltage drop tunnel junctions grown monolithically by MOCVD

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

42 ENGINEERING↗
DOE OSTI2022

Impact of edge harmonic oscillations on the divertor heat flux in NSTX

Previously, ELM-free and inter-ELM divertor peak heat flux reduction induced by an edge harmonic oscillation (EHO) was observed in NSTX (K.F. Gan et al., 2017 Nucl. Fusion 57 126053). This paper introduces new analysis of the EHO impact on the divertor heat flux. It was found that enhanced edge turbulence significantly altered the divertor heat flux footprint in NSTX H-modes, relative to ELM-free discharges. When the background edge fluctuation level was low, the EHO significantly increased the heat flux width and decreased the divertor peak heat flux. When the background edge fluctuation level was high, the EHO actually increased the divertor peak heat flux. As a result, it was also found that the heat flux width increased with increasing frequency of the EHO.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Optimal Modulation and DM Filter Design for a High Switching Frequency Single-Stage Microinverter

This paper presents an optimal modulation and systematic filter design approach for a single-stage dual-active-bridge (DAB) based dc-ac microinverter to achieve improved differential-mode (DM) noise performance for electromagnetic interference (EMI) tests. As DM filters contribute significantly to the overall converter volume, the main objective of this work is to leverage the degrees of freedom in the DAB converters to effectively attenuate the EMI noise. In addition, the DM filter design method needs to ensure near unity power factor converter operation. To achieve these targets, this paper analyzes three modulation strategies based on fixed or variable switching frequency operation where the different control modulation variables are varied to find the simulated DM noise spectrum. Based on the required DM attenuation, a constrained optimization problem is formulated to determine minimal DM filter parameters. Simulation results show that a spread spectrum approach with variable switching frequency is shown to minimize the DM EMI attenuation effort by spreading the noise profile. A fully GaN 400 W hardware prototype demonstrated the spread-sprectrum approach.

14 SOLAR ENERGY↗
DOE OSTI2022

Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

Efficient and ultrafast (aluminum)-gallium-nitride-based metal-semiconductor-metal (Al x )Ga 1–x N ultraviolet photodiodes were implemented to investigate the spectral properties of GaN/AlGaN-based photodetectors. Al composition of the GaN templates were varied from 0-% to 30% to demonstrate the impact of Al mole fraction on the cutoff wavelength of these UV photodiodes. Asymmetric metal contact electrodes were fabricated to optimize the external quantum efficiency without compromising their ultrafast photoresponse. Here, the best performing devices exhibited a peak response of 4 V and an oscilloscope limited temporal pulse width of 61 ps at a 20-V bias with a peak spectral responsivity of 36.5 mA/W at 280 nm.

42 ENGINEERING↗
DOE OSTI2023

Load Profile Inpainting for Missing Load Data Restoration and Baseline Estimation

This paper introduces a Generative Adversarial Nets (GAN) based, Load Profile Inpainting Network (Load-PIN) for restoring missing load data segments and estimating the baseline for a demand response event. The inputs are time series load data before and after the inpainting period together with explanatory variables (e.g., weather data). Here, we propose a Generator structure consisting of a coarse network and a fine-tuning network. The coarse network provides an initial estimation of the data segment in the inpainting period. The fine-tuning network consists of self-attention blocks and gated convolution layers for adjusting the initial estimations. Loss functions are specially designed for the fine-tuning and the discriminator networks to enhance both the point-to-point accuracy and realisticness of the results. We test the Load-PIN on three real-world data sets for two applications: patching missing data and deriving baselines of conservation voltage reduction (CVR) events. We benchmark the performance of Load-PIN with five existing deep-learning methods. Our simulation results show that, compared with the state-of-the-art methods, Load-PIN can handle varying-length missing data events and achieve 15-30% accuracy improvement.

14 SOLAR ENERGY↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗
DOE OSTI2024

Wide Bandgap Generation (WBGen): Developing the Future Wide Bandgap Power Electronics Engineering Workforce

This Final Technical Report (FTR) summarizes the work conducted at the Center for Power Electronics Systems (CPES) under the Wide-Bandgap Generation (WBGen) fellowship and traineeship program established by the Advanced Manufacturing and Technologies Office (AMMTO) of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) at Virginia Tech, which had as main objective to train the next generation of U.S. citizen power engineers with wide-bandgap (WBG) power semiconductor expertise, with the intent to aid in fulfilling the future workforce needs in this field. The latter was deemed of strategic importance given the fast-paced growth observed—and predicted—in the demand of this technical expertise, whose practitioners have become the enablers and executioners of the electrification transformation process that not just the U.S., but the whole world, is currently undergoing as it seeks for more effective and efficient ways to use energy. As such, the WBGen program set forth to achieve its educational goals, which in addition sought to broaden the range of WBG-based power electronics by conducting research and development on high-efficiency grid apparatus and high-efficiency electrical power systems, and to also enhance the power engineering curriculum by formalizing WBG-oriented design procedures replacing existent yet now obsolete design procedures developed for Silicon (Si) based power electronics. This effort led CPES to spearhead the development of a new major within The Bradley Electrical and Computer Engineering (ECE) Department at Virginia Tech, namely Electronic Power and Energy Systems (EPES), which coalesced power electronics and power systems courses to provide undergraduate students with a strong formation in the power engineering field, while creating a pipeline of graduate students that could pursue the WBG-based curriculum and conduct research at CPES. In all, in what is considered a true success, eight of the twenty WBGen fellows that graduated program were recruited from the ECE department undergraduate cohort. The traineeship emphasized as well, from its beginning, the partnership with industry and national laboratories, which took advantage of the successful industry consortium at CPES that has historically been formed by 80–90 power and energy companies working in close collaboration with the center. This gave WBGen fellows the accessibility and possibility to conduct internships at partner facilities during the summer months, focused solely on the evaluation, testing, and adoption of WBG devices, which were many times tightly related to their respective research work and plans. In addition, WBGen fellows conducted their main research work within the confines of research programs at CPES conducted with these industry partners, providing them with a unique opportunity to develop not just their technical expertise—while advancing their knowledge, but to also learn and practice a slew of skills needed for their professional growth. As such, the fellows tackled a variety of WBG-related research topics, from device reliability and capability aspects as well as packaging and integration, encompassing the use of advanced materials and new structures, current sharing challenges, and insulation systems, to advanced gate-drivers with integrated sensors and protection mechanisms and active current- and voltage-based control, to optimized layouts seeking to maximize the switching and power processing performance of these devices, to power processing solutions adopting Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors for a variety of applications; including radiation-hardened converters for space dc distribution systems, direct three-phase ac-to-ac power converters for aerospace systems, dc-ac inverters for automotive traction drives, high-frequency isolated dc-dc battery chargers also for heavy transportation systems, and medium-voltage dc-dc and dc-ac converters for distribution systems and future power grids. The WBGen program ultimately graduated a total of 20 power engineers, all experts on WBG-based power electronics, awarding 18 M.S. and 2 PhD degrees in the process. These fellows, all U.S. citizens, allowed CPES to increase the number of citizens students to 33 % at the peak of the program, as the traineeship made possible the recruitment of talent with more attractive graduate research assistantship (GRA) contracts. Unfortunately, the present U.S. citizen enrollment at CPES has declined back to historic levels—approximately 10 %, as the regular GRA rates are not competitive enough when compared with entry-level industry jobs. In all, WBGen fellows published a total of 7 peer-reviewed journal articles, 44 papers at international technical conferences, made 42 presentations at international technical conferences, and filed 4 invention disclosures and patent applications, which have since then been granted by the U.S. Patent and Trademark Office (USPTO). Their contribution to CPES, Virginia Tech, the United States, and the world, has been significant, and continues to yield results thanks to the exemplary career that the fellows have initiated at many of the partners of the program, which include Wolfspeed, Raytheon Technologies, Infineon, Lockheed Martin, Dominion Energy, Northrop Grumman, Rivian, Aerospace Corporation, Sandia National Laboratory, National Renewable Energy Laboratory, John Hopkins University, and Virginia Tech.

14 SOLAR ENERGY↗
DOE OSTI2024

ARC-SAFE: Accelerated Response semiconducting Contactors and Surge Attenuation For DC Electrical systems (Final Scientific/Technical Report)

The landscape of power transmission and distribution is quickly evolving as more power conversion is done through power electronics and transmitted or distributed at medium voltage direct current (MVDC). As power electronics tend to store less energy and be less resilient to faults than conventional power transformers, a reliable and fast protection against faults is critical to protect power electronics (PE) based infrastructure, especially for medium- and high-voltage applications. This motivates the development of PE based protection circuits to replace slower contemporary electromechanical breakers. In this project a novel PE based MVDC circuit breaker is developed; the new design is comprised of 1) a normally-on leg made of commercially-available, cascaded SiC junction field effect transistors (JFETs) with a passive balancing network, and 2) a normally-off leg based on an optically-triggered gallium nitride (GaN) photoconductive semiconductor switch (PCSS). The normally-off leg was designed to be quickly turned on, to divert current to an auxiliary dissipative circuit, as the normally-on leg is turned off. This approach, using solid-state devices, was selected for a high-performance, fast-switching operation for the DC circuit breaker as compared to approaches that use slower mechanical switches. To be practical, the circuit breaker must have low conduction loss (low Ron) in the normally-on leg and fast coordinated triggering of the normally-off leg to avoid damage from inductive flyback, which could be considerable for long lengths of cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Rugged WBG Devices and Advanced Electric Machines for High Power Density Automotive Electric Vehicles

This work explored two very important approaches for supporting transportation electrification and reducing dependence on imports of critical materials. In the first task, several novel electric machine architectures with low rare earth metal content were compared analytically, then experimentally to verify their performance. Rare earth metals are imported largely from China and are widely used in many clean energy systems such as wind turbines and EV motors. Reducing our dependence on this critical material is an important objective for ensuring our independence and continued economic prosperity. In the second task, a GaN based inverter for EV inverters was developed to demonstrate the suitability of that wide bandgap semiconductor device in this important application.

42 ENGINEERING↗
DOE OSTI2025

Photoconductive Semiconductor Switches: Materials, Physics, and Applications

Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.

36 MATERIALS SCIENCE↗