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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

The effect of minority carrier mobility variations on the performance of high voltage silicon solar cells

A multistep diffusion processing schedule is described which allows the attainment of high open circuit voltages in 0.1 ohm/cm silicon cells. The schedule consists of a deep primary diffusion, followed by an acid etch of emmitter surface which is then followed by a shallow secondary diffusion. A correlation is made between the observed voltage increases and the time of primary diffusion. Results indicate that as the primary diffusion time increases, the voltage rises monotonically.

Weizer, V. G.↗
NASA NTRS1980

The effect of solar array voltage patterns on plasma power losses

The use of high-voltage solar arrays in space is discussed in connection with the draining of array power by currents flowing between exposed surfaces through the surrounding plasma. The possibility of reducing the power loss by arranging solar cell strings in repeated small-area modules to eliminate any large areas at high potentials is investigated. It is found that the difference in power loss between modular and linear patterned high-voltage arrays is fairly small. Although the use of modular patterns can reduce the effective mean potential by about 10%, for the type of configuration being considered there is also a 10% increase in sheath area, leading to only a few percent change in total power loss. It is concluded that plasma power loss should not be a primary consideration in designing the physical arrangement of high-voltage arrays.

Mandell, M. J.↗
NASA NTRS1981

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗
NASA NTRS1982

Signal analysis of voltage noise in welding arcs

Gas tungsten arc welds were made on low alloy steel plates to which intentional defects (discontinuities) were imposed. Disruption of shielding gas, welding over surface films, and tack welds produce changes in what is otherwise a relatively uniform voltage signal. The arc voltage was 15 volts + or - 2 volts with 300 mV ripple noise from the power supply. Changes in this steady noise voltage varied from 50 mV to less than one millivolt depending on the severity and the type of change experienced. In some instances the changes were easily detected by analysis of the signal in real time, while in other cases the signal had to transformed to the frequency domain in order to detect the changes. Discontinuities as small as 1.5 mm in length were detected. The ultimate sensitivity and reproducibility of the technique is still being investigated.

Elis, E.↗
NASA NTRS1982

Method of making a high voltage V-groove solar cell

A method is provided for making a high voltage multijunction solar cell. The cell comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.

Evans, J. C., Jr.↗
NASA NTRS1982

High voltage planar multijunction solar cell

A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.

Evans, J. C., Jr.↗
NASA NTRS1982

Fast recovery, high voltage silicon diodes for AC motor controllers

The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

Balodis, V.↗
NASA NTRS1983

High voltage v-groove solar cell

A high voltage multijunction solar cell comprises a number of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.

Evans, J. C., Jr.↗
NASA NTRS1985

Battery-Operated High-Voltage Power Supply

Circuitry allows large multiplication of voltage. Filament voltage is -80kV. Potential difference between terminals P3 and P4 adjusted to make grid 80 to 150 volts more negative than filament enabling grid to focus electrons from filament into stream impinging on anode, which then emits x-rays. Circuitry provides independently adjustable voltages in kilovolt range for x-ray tubes and other instruments.

Ruitberg, A. P., Kennethm.↗
NASA NTRS1985

LRU Voltage Analysis

Program for analyzing line replacement unit (LRU) voltages in shuttle orbiter predicts minimum voltage level of main power distribution bus needed to meet predetermined LRU voltage. Loads constant-power or resistive. In some cases fed from two or three sources through diodes.

Oepomo, T.↗
NASA NTRS1984

Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

Weizer, V. G.↗
NASA NTRS1983

Effects of voltage control in utility interactive dispersed storage and generation systems

When a small generator is connected to the distribution system, the voltage at the point of interconnection is determined largely by the system and not the generator. The effect on the generator, on the load voltage and on the distribution system of a number of different voltage control strategies in the generator is examined. Synchronous generators with three kinds of exciter control are considered, as well as induction generators and dc/ac inverters, with and without capacitor compensation. The effect of varying input power during operation (which may be experienced by generators based on renewable resources) is explored, as well as the effect of connecting and disconnecting the generator at ten percent of its rated power. Operation with a constant slightly lagging factor is shown to have some advantages.

Kirkham, H.↗
NASA NTRS1983

Electrical safety for high voltage arrays

A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

Marshall, N. A.↗
NASA NTRS1984

Experimental studies of scaling laws for plasma collection at high voltages

Current-voltage characteristics were determined for stainless steel in a laboratory with a simulated ionospheric environment of 5 x 10 to the 11th to 2.5 x 10 to the 12th electrons/cu m. Panels with areas differing by a factor of up to 100 were biased between 0 and -2300 V. Secondary emission was corrected for using experimental data. The results indicate that the current-voltage characteristics are almost linear and that for voltages above about -500 V the current scales with characteristic panel length as L exp 1.2. Comparison with some theoretical predictions is discussed. Because of orbital velocity associated ion ram effects, the results of this study must be used with caution when applied to an orbiting spacecraft.

Konradi, A.↗
NASA NTRS1985

Programable Driver for Voltage-Controlled Oscillators

Electronically programable read-only memory (EPROM) and digital-to-analog converter provide customized time-varying voltage for frequency modulation. Voltage used to modulate IMPATT oscillator that serves as microwave pump for solid-state maser in low-noise amplifier. EPROM simple to tailor voltage waveform to suit characteristics of given maser. Digital information for waveform programed into EPROM chip; digital-to-analog converter reads information and produces corresponding analog wave. Principle readily adapted to other applications.

Fowler, L. E.↗
NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗
NASA NTRS1985

Modulated voltage metastable ionization detector

The output current from a metastable ionization detector (MID) is applied to a modulation voltage circuit. An adjustment is made to balance out the background current, and an output current, above background, is applied to an input of a strip chart recorder. For low level concentrations, i.e., low detected output current, the ionization potential will be at a maximum and the metastable ionization detector will operate at its most sensitive level. When the detected current from the metastable ionization detector increases above a predetermined threshold level, a voltage control circuit is activated which turns on a high voltage transistor which acts to reduce the ionization potential. The ionization potential applied to the metastable ionization detector is then varied so as to maintain the detected signal level constant. The variation in ionization potential is now related to the concentration of the constituent and a representative amplitude is applied to another input of said strip chart recorder.

Carle, G. C.↗
NASA NTRS1985

High-voltage solar-cell chip

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Kapoor, V. J.↗