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At least 631 records · Page 35

In Situ Optical Absorption Studies of Point Defect Kinetics and Thermodynamics in Oxide Thin Films

The authors discuss the use of in situ optical absorption to probe point defect equilibria and kinetics in oxides, with particular attention to thin films and high-temperature measurements evaluating changes in oxygen content. The introduction notes the effect of point defects on oxide behavior, including differences in thin films versus bulk materials, and describes methods to evaluate point defect equilibria and kinetics; advantages of optical absorption among these methods are highlighted. Section 2 provides an overview of how optical absorption and point defect concentrations are related, including various possible structural and electronic origins of defect-mediated absorption changes corresponding to oxygen content changes. Section 3 traces the development of historical understanding of optical absorption in nonstoichiometric oxides and emergence of thin film applications and measurement approaches that resulted. Section 4 details the procedure for determining surface exchange coefficients from optical transmission relaxation measurements and provides specific examples of how this approach uniquely has enabled new insights into thin film surface exchange behavior with and without current collectors. Section 5 provides examples of optically derived diffusivity measurements and comparisons of bulk and thin film defect equilibria. Section 7 outlines potential opportunities and future developments in this area, and Section 7 concludes the manuscript.

36 MATERIALS SCIENCE↗

Role of Wadsley Defects and Cation Disorder to Enhance MoNb 12 O 33 Diffusion

Wadsley-Roth (WR) niobates have emerged as high-rate anode materials that can combine rapid ionic diffusion with good electronic conductivity. WR compounds have been defect-enhanced by limited annealing, however, such materials often contain multiple types of defects. In particular, both Wadsley defects (variable block size) and transition metal disorder have the potential to modify transport rates, however the corresponding effects are not well understood mechanistically. Here, MoNb 12 O 33 (MNO) was calcined at two different temperatures to compare a defect-rich condition (MNO-800) with a proximal order-rich condition (MNO-900) as assessed through XRD, XANES, EXAFS, and STEM characterizations. Galvanostatically cycled lithium half cells of MNO-800 exhibited additional capacity (307 mAhg −1 at 0.1C, 4.66% higher) and improved high-rate capacity of 200 mAhg −1 at 10C. ICI-based overpotential analysis identified solid state diffusion as the dominant rate limiting process where MNO-800 correspondingly exhibited ∼3X faster capacity-weighted diffusivity. A machine-learning interatomic potential was trained to density functional theory and then applied with molecular dynamics (MLIP-MD) to examine the possible roles of Wadsley defects and transition metal disorder. For both defect-types, Li was found to populate and activate fast diffusion paths from window sites at lower extents of lithiation as compared to the order-rich model.

defect↗

Defect Detection of Industrial Radiography Images of Ammonia Pipes by a Sparse Coding Model

Pipeline transportation systems for liquid anhydrous ammonia require periodic inspections for pipe defects. Defects such as crack-like flaws, including those due to stress corrosion and fatigue crack growth and fatigue of welded joints, can be tested by in situ radiography testing (RT). It is required that the detection technique should reveal the defect region without any significant distortion. Imaging noise such as that due to radiation scattering reduces contrast over the whole or part of the image, causing a reduction in image quality. Various image processing methods can be utilized to improve the outcome of RT of pipes. The sparse coding model is a powerful contrast improvement algorithm, but it tends to eliminate imaging details, passing them off as noise. We present a novel implementation of the sparse coding model based on a probabilistic interpretation to improve defect detection in ammonia pipelines radiography images. The performance of this procedure was evaluated in radiographic images of defect and corrosion regions for different pipe types. For ammonia pipes, the technique was found to offer a significant improvement in defect detection while preserving imaging details.

42 ENGINEERING↗

Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd{sub x}Hg{sub 1–x}Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n{sup +}–p- and n{sup +}–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p{sup +}–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates

The reduction of the threading dislocation density in metamorphic GaSb grown on GaAs substrates through the use of InGaSb defect filter layers has been investigated. More specifically, we study the effects of strain and thickness on the ability of a InGaSb defect filter layer to reduce threading dislocations in GaSb solar cells grown on GaAs substrates. The strain between the GaSb metamorphic layer on GaAs substrate (99.5% relaxed) and the InGaSb defect filter layer is varied by changing the indium composition in the InGaSb layer. Here, it is demonstrated that an InGaSb defect filter layer with 0.6% strain is more effective for blocking threading dislocations compared with higher-strain layers, resulting in improved short-circuit current (J sc ) and open-circuit voltage (V oc ) for the metamorphic GaSb solar cell. The optimization of the defect filter layer involves varying the thickness of the layer to achieve the lowest possible threading dislocation density. This also takes into account the critical thickness of the InGaSb layer on GaSb to avoid generation of threading dislocations from the InGaSb layer itself. It is shown that adding an In 0.11 Ga 0.89 Sb defect filter layer with thickness of 250 nm and 0.6% strain beneath a GaSb solar cell grown on a GaAs substrate improves V oc from 0.1 V to 0.16 V and J sc from 19.7 mA/cm 2 to 24.7 mA/cm 2 .

36 MATERIALS SCIENCE↗

Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study

Distribution of black spot defects and small clusters in 1 MeV krypton irradiated 3C-SiC has been investigated using advanced scanning transmission electron microscopy (STEM) and TEM. We find that two thirds of clusters smaller than 1 nm identified in STEM are invisible in TEM images. For clusters that are larger than 1 nm, STEM and TEM results match very well. A cluster dynamics model has been developed for SiC to reveal processes that contribute to evolution of defect clusters and validated against the (S)TEM results. Simulations showed that a model based on established properties of point defects (PDs) generation, reaction, clustering, and cluster dissociation, is unable to predict black spot defects distribution consistent with STEM observations. This failure suggests that additional phenomena not included in a simple point-defect picture may contribute to radiation-induced evolution of defect clusters in SiC and using our model we have determined the effects of a number of these additional phenomena on cluster evolution. Using these additional phenomena it is possible to fit parameters within physically justifiable ranges that yield agreement between cluster distributions predicted by simulations and those measured experimentally.

36 MATERIALS SCIENCE↗

Defect formation and bending properties in graphite under He atom implantation investigated by molecular dynamics method

The formation and evolution of radiation defects and their effects on bending property of a single graphite under low energy helium atom implantation have been studied at atomic scale through molecular dynamics simulations. Various simple interstitial and vacancy defects are observed during the implantation process, which is a function of incident energy and cross section of helium-carbon interaction. Large defects are observed after continuous helium atom implantations. The effects of incident energy on the density, size and distribution of defects are analyzed in detail. Furthermore, the kinetic evolution process of radiation defects at different annealing temperatures have also been simulated, including the migration, aggregation, transformation, coalescence, and self-healing. Here, the large defect clusters, crossing several carbon layers, have been confirmed to be the primary reasons that affect the bending property of graphite. All these results provide a new understanding for further applications of graphite in nuclear reactors.

Atomic implantation↗

Mechanics of point defect diffusion near dislocations and grain boundaries: A chemomechanical framework

Diffusion of point defects during irradiation is simulated via a two-way coupling between mechanical stress and defect diffusion in iron. This diffusion is based on a modified chemical potential that includes not only the local concentration of radiation-induced defects, but also the influence of the residual stress field from both the microstructure (i.e. dislocations or grain boundaries) and the eigenstrain caused by the defects themselves. Defect flux and concentration rates are derived from this chemical potential using Fick’s first and second laws. Mean field rate theory is incorporated to model the annihilation of Frenkel pairs, and increased annihilation near grain boundaries is included based on the elastic energy of each grain boundary. Mechanical equilibrium is coupled with diffusion by computing eigenstrain from point defects and adding this to the total strain. Intrinsic stresses associated with the dislocations and grain boundaries are calculated using dislocation and disclination mechanics. Through this two-way-coupled model, regions of low concentration are seen near grain boundaries, and sink efficiency is calculated for different types of microstructure. Furthermore, the results show that the two-way mechanical coupling has a strong influence on sink efficiency for dislocation loops. The results also suggest that misorientation is a poor metric for determining sink efficiency, with sink density and elastic energy being much more informative.

36 MATERIALS SCIENCE↗

Using lifetime of point defects for dislocation bias in bcc Fe

The interaction between dislocations and point defects is key to deformation processes and microstructural evolution of structural materials. In this work, we compute the lifetime of point defects to describe their interaction with dislocations. This approach can accurately account for the effects of the dislocation core and anisotropic defect dynamics to accumulatively determine the capture efficiency, sink strength, and dislocation bias at different temperatures and dislocation densities. Particularly, the absorption of point defects by straight screw and edge dislocations in a model bcc iron system is studied. The maximum swelling rates based on the obtained bias factors are in close agreement with a variety of experimental measurements, including both neutron and ion-irradiation data, especially when considering the survival fraction for point defects from displacement cascades. Further, this approach applies to many other processes and sinks, such as dislocation loops and interfaces, providing a powerful means to develop fundamental insights critical for improving radiation resistance and mechanical properties of structural materials through controlling defect interaction and evolution.

36 MATERIALS SCIENCE↗

Internal defect detection and characterization of samarium-cobalt sintered magnets by ultrasonic testing technique

Excessive quantities of samarium-cobalt (Sm-Co) magnet material are being scrapped needlessly due to a lack of understanding of inhomogeneity distribution and unacceptable internal defects. If there is a way to identify, locate, characterize and when needed separate the defective portions of magnet material, utilization can be increased and product quality improved. Further, the magnets’ magnetic and mechanical performance can be improved by reducing the occurrence of internal defects. This paper reports on a cost-effective and efficient nondestructive evaluation method based on an ultrasonic testing (UT) technique applied for detecting and characterizing internal defects in Sm-Co sintered magnets. Applying the UT technique will allow users to comprehensively analyze internal defects, such as inclusions, porosity, microcracks, and other structural irregularities, check for homogeneity and anomalous regions and give the locations of these internal anomalies and defects within the Sm-Co sintered magnets. The UT technique can also be applied to other rare-earth permanent magnets, such as sintered or die-upset neodymium-iron-boron (Nd-Fe-B) magnets. The UT technique can effectively guide quality control and acceptable product selection, in addition to optimizing the magnet alloy design and production processes. Therefore, it can facilitate the improvement of magnet manufacturing efficiency and machinability, reduce scrap, prolong service life, increase the use of what would be post-production waste, and enhance product reuse and recycling at end-of-life disposition.

36 MATERIALS SCIENCE↗

A novel approach to quantifying the kinetics of point defect absorption at dislocations

We report that microstructure evolution under creep loading and/or irradiation is largely affected by the two-way coupling between dislocation induced plasticity and point defect diffusion as mediated by the internal elastic strain field within the medium. The magnitude of this effect has been quantified only in idealized, simplified environments such that estimates of absorption rates of point defects to dislocations ignore the collective effects on capture rates arising from particular distribution of dislocations in a given network, the interaction of point defects with the internal strain, or in many cases both. To quantify these effects, we advance a novel methodology to determine point defect capture rates locally within a spatially resolved finite difference solution to the diffusion problem for arbitrarily directed dislocations and the corresponding strain fields. In addition to examining the effects of these couplings on local and effective absorption rates of dislocation networks, the potential consequences of these interactions on other microstructure evolution phenomena are examined using void swelling under irradiation as an example. Our study indicates that local rates of defect mediated microstructural changes such as cavity growth can vary strongly as a consequence of the arrangement of the dislocation network and the corresponding strain state. Lastly, the heterogeneous aspects of the resultant defect populations are shown to provide mechanisms for microstructural evolution under irradiation that are not available in the conventional homogeneous theory.

36 MATERIALS SCIENCE↗

Burst pressure models and validations for thick-walled pipelines containing corrosion defects

Corrosion is one major threat to pipeline integrity. Over the past decades, many corrosion models have been developed for determining the remaining strength of corroded pipelines, including ASME B31.G, Modified B31.G, LPC, PCORRC and their modified models. All these corrosion models are applicable only to large diameter, thin-walled pipelines with a diameter to wall thickness ratio D/t ≥ 20. In practice, many pipelines have a small diameter and thick wall with a D/t ratio < 20, and thus an adequate corrosion model is needed for assessing remaining strength for corroded thick-walled pipelines. This paper briefly reviews the theoretical burst pressure models for defect-free thin and thick-walled pipelines and four representative corrosion assessment models for thin-walled corroded pipelines. On this basis, two modified corrosion models are proposed to thick-walled pipelines in terms of the average shear stress yield theory. To verify the proposed corrosion models, comprehensive validations are performed. Numerical validations include the elastic-plastic finite element analysis to determine burst pressure for pipelines without and with corrosion defects and the model evaluation using a large dataset of available FEA results of burst pressure for machined defects. Experimental validations include a set of burst pressure tests for defect-free thick-walled pipes with different thicknesses and the model evaluation using one large burst dataset for machined defects with flat bottoms and another large dataset for real corrosion defects with curved river bottom profiles. Both numerical and experimental validations show that the proposed corrosion models can more accurately predict the remaining strength for corroded thin and thick-walled pipelines.

Pipeline↗

Surface defect free growth of a spin dimer TlCuCl{sub 3} compound crystals and investigations on its optical and magnetic properties

A defect-free high quality single crystal of spin dimer TlCuCl{sub 3} compound is firstly synthesized at the optimal growth temperature using the vertical Bridgman method. In this study, we clearly found that the cupric chloride is easily decomposed into the Cl{sup −} deficient composition at ≥470 °C. The Cl{sup −}- related gas phase at the high temperature region also always gives rise to a pinhole-like surface defect at the surface of crystal. Therefore, we clearly verified an exotic anisotropic magnetic behavior (anisotropic ratio of M{sub b}/M{sub (201)} at 2 K, 7 T=10) using the defect-free TlCuCl{sub 3} crystals in this three-dimensional spin dimer TlCuCl{sub 3} compound, relatively stronger magnetic ordering in the H//b than that of H//(201) direction at above the transition magnetic field. - Graphical abstract: A single crystal of spin dimer TlCuCl{sub 3} compound with a defect free is successfully synthesized on the basis of TG/DTA result. We newly found that this cupric chloride compound is easily decomposed into the Cl{sup −} deficient composition at ≥470 °C and Cl{sup −} related gas phases also give rise to the defects like a pinhole on the surface of TlCuCl{sub 3} crystal. Using the crystals with a surface defect free, we also clearly verified the crystal structure of spin dimer TlCuCl{sub 3} compound.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic interactions with cluster and spin-glass type growth. - Highlights: • Lattice defects/vacancies attributed high T{sub c} –ferromagnetism. • Transition metal and rare earth ions deform the wurtzite ZnO lattice to induce defects. • Oxygen vacancies are more favorable than Zn with Ni, Cu, Ce into ZnO. • Defects assisted long-range ferromagnetism of doped ZnO include cluster and spin-glass growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

36 MATERIALS SCIENCE↗

Synergistic effect of surface defect and interface heterostructure on TiO2/BiOIO3 photocatalytic oxide gas-phase mercury

Highlights: • TiO{sub 2}/BiOIO{sub 3} photocatalysts were prepared for the first time. • Synergistic effect of surface defect and interface heterostructure on TiO{sub 2}/BiOIO{sub 3} was investigated in detail. • The SO{sub 2} and NO obtain an adverse effect on photocatalytic oxide mercury while the HCl can promote the oxidation process. • The mechanism of photocatalytic removal gas-phase mercury by TiO{sub 2}/BiOIO{sub 3} photocatalysts was proposed. - Abstract: Enhancing the photocatalytic activity of the semiconductors by introducing surface defect or forming interface heterostructure has attracted widespread interests. In this work, a novel photocatalysts, defect TiO{sub 2}/BiOIO{sub 3} heterostructure possessing both surface defect and interface heterostructure, was prepared via calcination method for the first time. The physicochemical property of the as-prepared defect TiO{sub 2}/BiOIO{sub 3} heterostructure was investigated by XRD, SEM, TEM, EDS, XPS, FT-IR, BET, DRS, and PL characterization. The results indicated that introducing surface defect and forming interface heterostructure on photocatalysts at the same time can enhance the visible light response, promote the transfer velocity of the photocarriers and suppress the recombination of photo-generated electron-hole pairs. Furthermore, it exhibits an enhanced activity on photocatalytic oxidation of gas-phase elemental mercury (Hg°), which shows the highest Hg° oxidation efficiency of 91.12% under visible light.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A foundation model for non-destructive defect identification from vibrational spectra

Defects are ubiquitous in solids and strongly influence materials’ functional properties. However, non-destructive characterization and quantification of defects, especially when multiple types coexist, remain a long-standing challenge. Here, we introduce DefectNet, a foundation machine learning model that predicts the chemical identity and concentration of substitutional point defects with multiple coexisting elements directly from vibrational spectra, specifically phonon density-of-states (PDoS). Trained on over 16,000 simulated spectra from 2,000 semiconductors, DefectNet employs a tailored attention mechanism to identify up to six distinct defect elements at concentrations ranging from 0.2% to 25%. The model generalizes well to unseen crystals across 56 elements and can be fine-tuned on experimental data. Validation using inelastic scattering measurements of SiGe alloys and MgB 2 superconductor demonstrates its accuracy and transferability. Furthermore, our work establishes vibrational spectroscopy as a viable, non-destructive probe for bulk point defect quantification, and highlights the promise of foundation models in data-driven defect engineering.

artificial intelligence↗

Toward high-throughput defect density quantification: A comparison of techniques for irradiated samples

Transmission electron microscopy (TEM) is an established tool used for the investigation of defects in materials. Traditionally, diffraction contrast techniques—two-beam bright-field and weak-beam dark-field—have been used to image defects due to contrast sensitivity from weak lattice strains. Use of these methods entail an intricate tilt series of imaging using different diffracting vectors, g, to verify the g•b invisibility criterion relative to the different defect types and habit planes inherent to the material. Recently, the addition of down-zone imaging and STEM imaging has also proven to be effective imaging techniques for defect density analysis. Interest in nanocrystalline (NC) materials, spurred by their conjectured superior properties compared to their coarse-grain counterparts, has been thriving and the investigation of their defect morphologies is essential. Maneuvering within NC samples in the TEM adds another layer of difficulty making the aforementioned techniques not practical for application to specimens with complex microstructures. For this reason, we have devised a protocol for identifying NC grains optimally oriented for quantitative analysis using NanoMegas ASTAR automated crystal orientation mapping (ACOM) in the TEM. In this work, we conduct a series of experiments assessing the effectiveness of conventional two-beam bright-field, weak-beam dark-field, and down-zone STEM imaging. Here, we also evaluate an ACOM-assisted multibeam imaging method and compare defect density results obtained using each technique in an irradiated nanocrystalline Au sample.

36 MATERIALS SCIENCE↗