Fast burning rates in thin film propellants
Fast burning rates in thin film solid composite propellants composed of McCormick-Selph 510, 164 monopropellant, oxidizer and polyvinyl chloride binder
Rodenberger, C. A.↗
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Results for “THIN FILMS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Solar cell thickness monitoring technique for thin film deposition
Thickness monitoring technique for thin films, using silicon solar cell mounted adjacent to substrate with iron deposition
Hudson, W. R.↗
Carbon thin film thermometry
The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.
Collier, R. S.↗
System for depositing thin films
A system for depositing a thin film of one material on another is described. A mass filter is interposed between the source of material being deposited and the object upon which deposition is being made.
Tashbar, P. W.↗
Thin film temperature sensors, phase 3
A thin film thermocouple system installation suitable for engine test evaluation was designed, and an engine test plan was prepared. Film adherence, durability, accuracy, and drift characteristics were improved. Film thickness was increased to 14 microns, and drift was reduced to less than 0.02 percent of Fahrenheit temperature per hour on actual turbine blades at 1255 K.
Grant, H. P.↗
Thin film coatings for improved alpha/epi
New thin film coatings were developed for fused silica, ceria doped glass, and Corning 0211 microsheet which provide increased emissivity and/or decreased solar absorption. Emissivity is enhanced by suppression of the reststrahlen reflectance and solar absorption is reduced by externally reflecting the ultraviolet portion of the solar spectrum. Optical properties of these coatings make them suitable for both solar cell cover and thermal control mirror applications. Measurements indicate equivalent environmental performance to conventional solar cell cover and thermal control mirror products.
Krisl, M. E.↗
Thermal and structural stability of cosputtered amorphous Ta(x)Cu(1-x) alloy thin films on GaAs
The characteristics of thin films of Ta-Cu, prepared over a wide range of compositions by cosputter deposition onto GaAs and fused quartz substrates, are studied by X-ray diffraction and van der Pauw resistivity measurement. Results show films to be amorphous over the range of 55-95 at. pct, and show Ta(93)Cu(7) barriers to be effective in preventing Au in-diffusion, with a 3000-A layer remaining unpenetrated after an annealing at 700 C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. pct Ta is found to be more rapid than that of Au, and interfacial reactions were shown to form compounds including Ta3Au, CuAu, TaAs2, and Ga3Cu7 above 700 C.
Oh, J. E.↗
Highly oriented Tl2Ba2Ca2Cu3O10 thin films by pulsed laser evaporation
Superconducting thin films on MgO (100) substrates with nearly pure Tl2Ba2Ca2Cu3O10 (2:2:2:3) phase using pulsed laser evaporation and postannealing have been fabricated. The films had c axes perpendicular to the substrates. Superconducting films with onset temperatures of 125 K and zero resistance at 110 K were obtained. X-ray microprobe fluorescence measurements indicate that a typical composition of films is Tl(0.66)Ba(1.77)Ca(1.46)Cu3O(x) which is low in Tl compared to that expected for the 2:2:2:3 phase. A typical grain size is greater than 10 microns revealed by scanning electron microscopy.
Liou, S. H.↗
Photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films
The response is reported of thin films of YBa2Cu3O(7-delta) with either a very grainy or a smooth epitaxial morphology to visible radiation. SrTiO3 substrates were employed for both types of films. The grainy films were formed by sequential multi-layer electron beam evaporation while the epitaxial films were formed by laser ablation. Both films were patterned into H shaped detectors via a negative photolithographic process employing a Br/ethanol etchant. The bridge region of the H was 50 microns wide. The patterned films formed by laser ablation and sequential evaporation had critical temperatures of 74 K and 72 K respectively. The bridge was current biased and illuminated with chopped He-Ne laser radiation and the voltage developed in response to the illumination was measured. A signal was detected only above the critical temperature and the peak of the response coincided with the resistive transition for both types of films although the correspondence was less exact for the grainy film. The details of the responses and their analysis are presented.
Valco, G. J.↗
Photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films
The response is reported of thin films of YBa2Cu3O(7-delta) with either a very grainy or a smooth epitaxial morphology to visible radiation. SrTiO3 substrates were employed for both types of films. The grainy films were formed by sequential multi-layer electron beam evaporation while the epitaxial films were formed by laser ablation. Both films were patterned into H shaped detectors via a negative photolithographic process employing a Br/ethanol etchant. The bridge region of the H was 50 microns wide. The patterned films formed by laser ablation and sequential evaporation had critical temperatures of 74 K and 72 K respectively. The bridge was current biased and illuminated with chopped He-Ne laser radiation and the voltage developed in response to the illumination was measured. A signal was detected only above the critical temperature and the peak of the response coincided with the resistive transition for both types of films although the correspondence was less exact for the grainy film. The details of the responses and their analysis are presented.
Valco, G. J.↗
VUV thin films, chapter 7
The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.
Zukic, Muamer↗
Transparent conducting thin films for spacecraft applications
Transparent conductive thin films are required for a variety of optoelectronic applications: automotive and aircraft windows, and solar cells for space applications. Transparent conductive coatings of indium-tin-oxide (ITO)-magnesium fluoride (MgF2) and aluminum doped zinc oxide (AZO) at several dopant levels are investigated for electrical resistivity (sheet resistance), carrier concentration, optical properties, and atomic oxygen durability. The sheet resistance values of ITO-MgF2 range from 10(exp 2) to 10(exp 11) ohms/square, with transmittance of 75 to 86 percent. The AZO films sheet resistances range from 10(exp 7) to 10(exp 11) ohms/square with transmittances from 84 to 91 percent. It was found that in general, with respect to the optical properties, the zinc oxide (ZnO), AZO, and the high MgF2 content ITO-MgF2 samples, were all durable to atomic oxygen plasma, while the low MgF2 content of ITO-MgF2 samples were not durable to atomic oxygen plasma exposure.
Perez-Davis, Marla E.↗
Method of making thin films
A method of making a thin film can include bombarding a substrate with first ions supplied from a first ion beam; and sputtering from a metal sputtering target substantially simultaneously with the bombardment to deposit a metal-ion film onto the substrate, wherein the method is performed without applied heat, and the metal sputtering target comprises one or more of a metal, a transition metal, a semi-metal, alloys thereof and combinations thereof.
Polakovic, Tomas↗
Antiferromagnetic Oxide Thin Films for Spintronic Applications
Antiferromagnetic oxides have recently gained much attention because of the possibility to manipulate electrically and optically the Néel vectors in these materials. Their ultrafast spin dynamics, long spin diffusion length and immunity to large magnetic fields make them attractive candidates for spintronic applications. Additionally, there have been many studies on spin wave and magnon transport in single crystals of these oxides. However, the successful applications of the antiferromagnetic oxides will require similar spin transport properties in thin films. In this work, we systematically show the sputtering deposition method for two uniaxial antiferromagnetic oxides, namely Cr2O3 and α-Fe2O3, on A-plane sapphire substrates, and identify the optimized deposition conditions for epitaxial films with low surface roughness. We also confirm the antiferromagnetic properties of the thin films. The deposition method developed in this article will be important for studying the magnon transport in these epitaxial antiferromagnetic thin films.
36 MATERIALS SCIENCE↗
The interaction of small particles and thin films of metals with gases. I - A brief review of the early stages of oxide formation
Existing work on gas-solid reactions making use of thin film technologies is reviewed. The discussion concentrates on two major areas of gas-metal interactions: chemisorption and the early stages of oxidation of metals (characterized by a non-volatile reaction product) and catalytic surface reactions (featuring volatile reaction products). A brief survey of oxide formation on metals is presented. Here it is of importance to distinguish between reactions on continuous thin film substrates and reactions on particulate deposits. Small particle-gas interactions also affect the nucleation, growth and sintering processes of thin films. It is shown that various combinations of UHV and high resolution electron microscopy techniques, which include in situ experimentation, can provide the appropriate tools for studying angstrom particle chemistry.
Poppa, H.↗
Orientational analysis of atomic pair correlations in nanocrystalline indium oxide thin films
The application of grazing-incidence total X-ray scattering (GITXS) for pair distribution function (PDF) analysis using >50 keV X-rays from synchrotron light sources has created new opportunities for structural characterization of supported thin films with high resolution. Compared with grazing-incidence wide-angle X-ray scattering, which is only useful for highly ordered materials, GITXS/PDFs expand such analysis to largely disordered or nanostructured materials by examining the atomic pair correlations dependent on the direction relative to the surface of the supporting substrate. A characterization of nanocrystalline In 2 O 3 -derived thin films is presented here with in-plane-isotropic and out-of-plane-anisotropic orientational ordering of the atomic structure, each synthesized using different techniques. The atomic orientations of such films are known to vary based on the synthetic conditions. Here, an azimuthal orientational analysis of these films using GITXS with a single incident angle is shown to resolve the markedly different orientations of the atomic structures with respect to the planar support and the different degrees of long-range order, and hence, the terminal surface chemistries. It is anticipated that orientational analysis of GITXS/PDF data will offer opportunities to extend structural analyses of thin films by providing a means to qualitatively determine the major atomic orientation within nanocrystalline and, eventually, non-crystalline films.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Measuring the Thickness and Elastic Properties of Electroactive Thin-film Polymers Using Platewave Dispersion Data
Electroactive thin-film polymers are candidate sensors and actuators materials [1,2]. They are also finding a significant potential for applications in muscle mechanisms and micro-electro-mechanical systems (MEMS).
micro-electro-mechanical systems MEMS↗
Post-Flight Analysis of Selected Fluorocarbon and Other Thin Film Polymer Specimens Flown on MISSE-5
Twenty thin film specimens were flown on M1SSE-5 as a cooperative effort between several organizations. This presentation will report results of initial inspections and post-flight measurements of the optical properties and recession of these materials due to the approx.13 month exposure period on the exterior of the International Space Station. These specimens were located on the "anti-solar" side of the MISSE-5 container and received a low number of Equivalent Sun Hours of solar UV exposure. Profilometry and/or ATF measurements will be conducted to determine thickness changes and atomic oxygen-induced recession rates Six of the specimens were covered with thin Kapton films, 0.1 and 0.3 mil in thickness. The 0.1 mil Kapton was almost completely eroded, suggesting that the atomic oxygen fluence is <8 x 10(exp 19) atoms/sq cm, similar to levels experienced during Space Shuttle materials experiments in the 1980's and 1990's. A comparison of results from MISSE-5 and Space Shuttle experiments will be included for those materials common to both the short and long-term exposures.
DeGroh, Kim↗