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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Computer acquired performance data from an etched-rhenium, molybdenum planar diode

Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.

Manista, E. J.↗
NASA NTRS1972

Development and fabrication of insulator seals for thermionic diodes

Eight different types of cermet seals for thermionic diodes were investigated: (1) 1 micron Al2O3 with Nb spheres; (2) 200 A Al2O3 with Nb spheres; (3) 1 micron Al2O3 with Nb 1% Zr spheres; (4) 200 A Al2O3 with Nb 1% Zr spheres; (5) Pure Y2O3 with Nb 1% Zr spheres; (6) Y2O3 3% ZrO2 with Nb 1% Zr spheres; (7) Y2O3 10% ZrO2 with Nb 1% Zr spheres; and (8) ZrO2 12% Y2O3 with Nb 1% Zr spheres. Investigations were made to determine the most favorable fabrication techniques and the effect of the bonding cycle, (length of bonding time and shutdown sequences). The analysis of the seals included tensile test, vacuum test, electrical test and metallurgical examination. At the conclusion of the development phase, 36 seals were fabricated for delivery for evaluation.

Poirier, V. L.↗
NASA NTRS1972

GaAs IMPATT diodes for microstrip circuit applications.

GaAs IMPATT diodes with plated heat sinks are shown to be particularly well suited for microstrip circuit applications. Details of materials growth and device fabrication procedures are given, and experimental results are presented for a GaAs IMPATT microstrip oscillator operating at X band.

Wisseman, W. R.↗
NASA NTRS1972

Temperature compensation of light emitting diodes and photodiodes.

Improved temperature compensation of the output from a GaAs LED can be obtained by connecting the diode in series with the emitter of an n-p-n transistor whose base circuit incorporates a high-gain operational amplifier and a parallel thermistor-resistor network. The temperature dependence of several photodiodes is also reported along with a practical temperature compensation scheme. Finally, the temperature compensation of a photon coupled pair consisting of a GaAs LED and a silicon photodiode is described. The combination provides a stability, linearity, and repeatability of about 1% over the upper 60% of the LED forward current range in the temperature interval from 15 to 45 C.

Burrous, C. N.↗
NASA NTRS1972

A CW Gunn diode bistable switching element.

Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

Hurtado, M.↗
NASA NTRS1972

Development of gallium aluminum phosphide electroluminescent diodes

Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

Chicotka, R. J.↗
NASA NTRS1973

Photon counting with a self-scanned diode array.

A self-scanned diode array may be used as temporary storage for individual photons if enough gain is provided by an image intensifier or electron multiplier to provide a detectable signal from each input event.

Mcnall, J. F.↗
NASA NTRS1973

Computer acquired performance data from a chemically vapor-deposited-rhenium, niobium planar diode

Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.

Manista, E. J.↗
NASA NTRS1974

Effects of intrinsic region width in Si/Li/ p-i-n diodes

Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.

Harman, T. L.↗
NASA NTRS1975

Varactor diode assembly with low parasitic reactances

Development of varactor diode assembly overcomes parasitic reactances of conventional varactor packages. In specially constructed assembly very high idler-frequency to signal-frequency ratios are used to obtain low-noise operation over maximum bandwidth.

Dickens, L. E.↗
NASA NTRS1975

Temperature-stable Gunn-diode oscillator

Oscillator consisting of Gunn diode embedded in coaxial circuit has excellent temperature stability and low fabrication costs as compared with automatic-frequency-control crystal oscillators.

Dengenford, J. E.↗
NASA NTRS1973

The 12 GHZ image and sum enhanced mixer diode converter

The development, fabrication, and testing of five image and sum frequency enhanced mixed diode converters are discussed. Design specifications include a RF band of 11.7 to 12.2 GHz, an IF band of 1.0 to 1.5 GHz, an IF return loss of 10 db, band center of 6.2 db, band edge of 6.7 db, LO frequency of 10.7 GHz, LO power of 20 dbm, and a conversion gain of 15.8 db. The converter is also capable of 30 db below desired signals for the third order intermodulation product level for twelve -75 dbm carriers.

Degenford, J. E.↗
NASA NTRS1975

Internal optical losses in very thin CW heterojunction laser diodes

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

Butler, J. K.↗
NASA NTRS1975

Heterodyne spectroscopy of astronomical and laboratory sources at 8.5 microns using diode laser local oscillators

The first 8.5 microns infrared heterodyne spectrometer has been constructed using tuneable semiconductor (PbSe) diode lasers and was used to measure absorption line profiles of N2O in the laboratory, as well as black-body emission from the moon and from Mars. Spectral information was recorded over a 200 MHz bandwidth using an 8-channel filter bank. The resolution was 25 MHz (6 millionths of a micron), and the minimum detectable (black-body) power was approximately 1 times 10 to the minus 16th power W for 8 min of integration. The results demonstrate the usefulness of heterodyne spectroscopy for the study of remote and local sources in the infrared.

Mumma, M.↗
NASA NTRS1976

Low-threshold light-emitting-diode laser

Technique, which consists of reducing bandgap change at heterojunction to 0.1 eV and avoiding deep-level impurities such as Si and Ge, produces low-threshold laser diodes which are made from (AlGa)As and emit in visible spectrum.

Hawrylo, F. Z.↗