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At least 595 records · Page 33

Probing Planck-Scale physics with a Ne-21/He-3 Zeeman maser

We completed a search for a sidereal annual variation in the frequency difference between co-located Xe-129 and He-3 Zeeman masers. This search sets a stringent limit of approximately 10(exp -27) GeV on boost-dependent Lorentz and CPT violation involving the neutron. A paper reporting this result has been accepted for publication in Physical Review Letters. We also completed detailed modeling and design of the next-generation dual-noble-gas Zeeman maser for an improved test of Lorentz and CPT violation, and begin construction of this device.

Walsworth, Ronald L.↗

Modeling Carbon and Hydrocarbon Molecular Structures in EZTB

A software module that models the electronic and mechanical aspects of hydrocarbon molecules and carbon molecular structures on the basis of first principles has been written for incorporation into, and execution within, the Easy (Modular) Tight-Binding (EZTB) software infrastructure, which is summarized briefly in the immediately preceding article. Of particular interest, this module can model carbon crystals and nanotubes characterized by various coordinates and containing defects, without need to adjust parameters of the physical model. The module has been used to study the changes in electronic properties of carbon nanotubes, caused by bending of the nanotubes, for potential utility as the basis of a nonvolatile, electriccharge- free memory devices. For example, in one application of the module, it was found that an initially 50-nmlong carbon, (10,10)-chirality nanotube, which is a metallic conductor when straight, becomes a semiconductor with an energy gap of .3 meV when bent to a lateral displacement of 4 nm at the middle.

Lee, Seungwon↗

Investigation of the 30P30N Slat Flow Field with Passive Control Devices Using Particle Image Velocimetry

The leading-edge slat of a high-lift wing is one of the main noise contributors during approach and landing. This paper describes an experimental investigation of the velocity field associated with multiple passive noise treatments, including slat-cusp extensions, a cove filler, and a gap filler, on a two-dimensional multi-element high-lift 30P30N airfoil. Previous work documented comparisons of both surface and far field pressure fluctuations in the presence of these devices with those for a baseline case at different flow conditions. However, important information related to the velocity fields was missing from the previous measurements, hindering our ability to elucidate the changes in the flow physics associated with the noise treatments. Therefore, two-component Particle Image Velocity has been used to investigate the influence of passive noise treatments on the flow fields. All measurements are taken at an effective, free-air angle of attack of 5.5 degrees and a stowed-chord-based Reynolds number of 1.71 × 10e6. The measurements show that the slat extensions shorten the slat-cove shear layer trajectory, resulting in reduced growth of disturbances within the slat-cove shear layer. This leads to a shift of tonal peaks to higher frequencies and a reduction in the tonal amplitudes. The gap filler blocks the flow path through the gap, causing the reattachment location to shift to the main wing leading edge lower surface. Consequently, the feedback loop associated with the flow-acoustic interaction in the baseline case is eliminated, and the turbulent kinetic energy in the slat-cove shear layer is significantly reduced. However, extensive flow separation is observed on the suction side of the gap filler, which does not eliminate the noise reduction benefit due to the gap filler, but does degrade the aerodynamic performance of the high-lift configuration. Finally, the overall flow field in the presence of the cove filler is similar to that in the baseline case at the design angle of attack, but the slat-cove shear layer is eliminated leading to a suppression of the cavity tones associated with the shear layer. This change accounts for the reduction in slat noise as measured in previous work.

Aeroacoustics↗

Stereo Imaging Velocimetry Technique Using Standard Off-the-Shelf CCD Cameras

Stereo imaging velocimetry is a fluid physics technique for measuring three-dimensional (3D) velocities at a plurality of points. This technique provides full-field 3D analysis of any optically clear fluid or gas experiment seeded with tracer particles. Unlike current 3D particle imaging velocimetry systems that rely primarily on laser-based systems, stereo imaging velocimetry uses standard off-the-shelf charge-coupled device (CCD) cameras to provide accurate and reproducible 3D velocity profiles for experiments that require 3D analysis. Using two cameras aligned orthogonally, we present a closed mathematical solution resulting in an accurate 3D approximation of the observation volume. The stereo imaging velocimetry technique is divided into four phases: 3D camera calibration, particle overlap decomposition, particle tracking, and stereo matching. Each phase is explained in detail. In addition to being utilized for space shuttle experiments, stereo imaging velocimetry has been applied to the fields of fluid physics, bioscience, and colloidal microscopy.

McDowell, Mark↗

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Patterson, Richard↗

Jet Noise Suppression

The objectives of this chapter are to review and summarize the jet noise suppression technology, to provide a physical and theoretical model to explain the measured jet noise suppression characteristics of different concepts, and to provide a set of guidelines for evolving jet noise suppression designs. The underlying principle for all jet noise suppression devices is to enhance rapid mixing (i.e., diffusion) of the jet plume by geometric and aerothermodynamic means. In the case of supersonic jets, the shock-cell broadband noise reduction is effectively accomplished by the elimination or mitigation of the shock-cell structure. So far, the diffusion concepts have predominantly concentrated on jet momentum and energy (kinetic and thermal) diffusion, in that order, and have yielded better noise reduction than the simple conical nozzles. A critical technology issue that needs resolution is the effect of flight on the noise suppression potential of mechanical suppressor nozzles. A more thorough investigation of this mechanism is necessary for the successful development and design of an acceptable noise suppression device for future high-speed civil transports.

Gliebe, P. R.↗

Hand controller commonality evaluation process

A hand controller evaluation process has been developed to determine the appropriate hand controller configurations for supporting remotely controlled devices. These devices include remote manipulator systems (RMS), dexterous robots, and remotely-piloted free flyers. Standard interfaces were developed to evaluate six different hand controllers in three test facilities including dynamic computer simulations, kinematic computer simulations, and physical simulations. The hand controllers under consideration were six degree-of-freedom (DOF) position and rate minimaster and joystick controllers, and three-DOF rate controllers. Task performance data, subjective comments, and anthropometric data obtained during tests were used for controller configuration recommendations to the SSF Program.

Stuart, Mark A.↗

Post irradiation effects (PIE) in integrated circuits

Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).

Shaw, D. C.↗

2D Quantum Transport Modeling in Nanoscale MOSFETs

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Svizhenko, Alexei↗

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗

Focusing Light Beams To Improve Atomic-Vapor Optical Buffers

Specially designed focusing of light beams has been proposed as a means of improving the performances of optical buffers based on cells containing hot atomic vapors (e.g., rubidium vapor). There is also a companion proposal to improve performance by use of incoherent optical pumping under suitable conditions. Regarding the proposal to use focusing: The utility of atomic-vapor optical buffers as optical storage and processing devices has been severely limited by nonuniform spatial distributions of intensity in optical beams, arising from absorption of the beams as they propagate in atomic-vapor cells. Such nonuniformity makes it impossible to optimize the physical conditions throughout a cell, thereby making it impossible to optimize the performance of the cell as an optical buffer. In practical terms simplified for the sake of brevity, "to optimize" as used here means to design the cell so as to maximize the group delay of an optical pulse while keeping the absorption and distortion of the pulse reasonably small. Regarding the proposal to use incoherent optical pumping: For reasons too complex to describe here, residual absorption of light is one of the main impediments to achievement of desirably long group delays in hot atomic vapors. The present proposal is directed toward suppressing residual absorption of light. The idea of improving the performance of slow-light optical buffers by use of incoherent pumping overlaps somewhat with the basic idea of Raman-based slow-light systems. However, prior studies of those systems did not quantitatively answer the question of whether the performance of an atomic vapor or other medium that exhibits electromagnetically induced transparency (EIT) with Raman gain is superior to that of a medium that exhibits EIT without Raman gain.

Strekalov, Dmitry↗

Three-Dimensional Numerical Modeling of Magnetohydrodynamic Augmented Propulsion Experiment

Over the past several years, NASA Marshall Space Flight Center has engaged in the design and development of an experimental research facility to investigate the use of diagonalized crossed-field magnetohydrodynamic (MHD) accelerators as a possible thrust augmentation device for thermal propulsion systems. In support of this effort, a three-dimensional numerical MHD model has been developed for the purpose of analyzing and optimizing accelerator performance and to aid in understanding critical underlying physical processes and nonideal effects. This Technical Memorandum fully summarizes model development efforts and presents the results of pretest performance optimization analyses. These results indicate that the MHD accelerator should utilize a 45deg diagonalization angle with the applied current evenly distributed over the first five inlet electrode pairs. When powered at 100 A, this configuration is expected to yield a 50% global efficiency with an 80% increase in axial velocity and a 50% increase in centerline total pressure.

Turner, M. W.↗

Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

Celaya, Jose R.↗

Thermal Expansion of Hafnium Carbide

Since hafnium carbide (HfC) has a melting point of 7029 deg. F, it may have many high-temperature applications. A literature search uncovered very little information about the properties of HfC, and so a program was initiated at the Lewis Research Center to determine some of the physical properties of this material. This note presents the results of the thermal expansion investigation. The thermal-expansion measurements were made with a Gaertner dilatation interferometer calibrated to an accuracy of +/- 1 deg. F. This device indicates expansion by the movement of fringes produced by the cancellation and reinforcement of fixed wave-length light rays which are reflected from the surfaces of two parallel quartz glass disks. The test specimens which separate these disks are three small cones, each approximately 0.20 in. high.

Grisaffe, Salvatore J.↗

A Path Towards Quantum Advantage in Training Deep Generative Models with Quantum Annealing

A class of quantum-classical hybrid machine-learning algorithms can be obtained by integrating classical deep generative models with quantum probability distributions as 'priors' over their latent variables. We introduce a hybrid implementation of variational autoencoders (QVAE) and also present a technique to hybridize flow-based invertible generative models. We demonstrate the use of D-Wave quantum annealers as physical simulators of quantum Boltzmann machines (QBM) to perform quantum-assisted training of QVAE. Latent-space QBM develop slowly mixing modes, opening a path to obtain quantum advantage in generative modeling with available quantum devices.

Vinci, Walter↗

Optical profilometer

Device, consisting of optical scanning subsystem, two light detectors with associated amolifiers, analog divider, and adjustable nonlinear function generator, directly determines surface area, absolute depth, and point-to-point distance of three-dimensional object without physical contact with surface under observation.

Burcher, E. E.↗

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗

Remote sensing technologies for Space Missions in the second half of the nineties' decade

The remote sensing research and technology to be used in the development of future NASA missions are discussed, with consideration given to earth sciences, planetary sciences, solar physics, and astrophysics. The remote sensing missions planned in the four application areas, their payload packages, and the particular instruments that will make up these packages are described. The advanced technologies to be used include systems and devices that address the detection of radiation in the radio, microwave, millimeter wave, submillimeter wave, IR, visible, UV, X-ray, and gamma-ray parts of the spectrum, including supporting technologies, such as optics, liquid cryogen transfer systems, and 'smart' sensors.

Sokoloski, M. M.↗