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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Oxidation-resistant reflective surfaces for solar dynamic power generation in near earth orbit

Reflective surfaces for Space Station power generation systems are required to withstand the atomic oxygen-dominated environment of near earth orbit. Thin films of platinum and rhodium, which are corrosion resistant reflective metals, have been deposited by ion beam sputter deposition onto various substrate materials. Solar reflectances were then measured as a function of time of exposure to a RF-generated air plasma.

Gulino, Daniel A.↗
NASA NTRS1991

LDEF spacecraft, ground laboratory, and computational modeling implications on Space Station Freedom's solar array materials and surfaces durability

The low earth orbital (LEO) durability of Space Station Freedom (SSF) solar array materials and surfaces is evaluated using results from the Long Duration Exposure Facility (LDEF), ground laboratory simulation tests, and Monte Carlo modeling. These results indicate that thin-film SiOx protective coatings are adequately durable to atomic oxygen, ultraviolet (UV) radiation, thermal cycling, and micrometeroid or debris impact.

Banks, Bruce A.↗
NASA NTRS1992

High performance polymers and polymer matrix composites for spacecraft structural applications

A program implemented by NASA Langley Research Center to develop and evaluate new polymers and polymer matrix composites for spacecraft structural applications is examined. Various polymeric films, moldings, and adhesives are evaluated for resistance to atomic oxygen and high energy electron and UV radiation. Thin films from the poly(arylene ether)s containing phenylphosphine oxide groups and the siloxane-epoxies exhibited minor weight loss compared to Kapton polyimide after exposure. Large doses (greater than 10 exp 9 rads) of electron radiation, simulating 30 yr of exposure in GEO, are found to alter the chemical structure of epoxies by both chain scission and cross-linking. The thermal cycling representative of both LEO and GEO environments can cause microcracking in composites which can in turn affect the dimensional stability and produce mechanical property reductions. The processing and fabrication issues associated with precision composite spacecraft components are also addressed.

Bowles, D. E.↗
DOE OSTI2024

Virtual Substrates for Wide Bandgap AlyX1-yN Growth

Lattice-matched substrates are critical for growth of high quality, compositionally-targeted ternary AlyX1-yN compounds with properties suitable for a wide variety of next-generation opto- and power electronic applications. [DOI:10.1149/2.0111702jss] We have identified the (111) plane of transition metal carbides and nitrides as lattice matched "virtual" substrate layers that have additional benefits of electrical conductivity and appropriate coefficients of thermal expansion for nitride layer at both growth and operating temperatures. [arXiv:2208.11769 2022] In this work, (111)-oriented TaC and ZrN are grown by RF sputtering and optimized as substrate layers for AlyGa1-yN and AlyGd1-yN, respectively. TaC is demonstrated as a full proof of concept. (111)-stabilized TaC layers with a rock-salt crystal structure are annealed to improve surface crystal quality and surface morphology and then used as a template for growth of an Al0.7Ga0.3N layer by molecular beam epitaxy. X-ray diffraction (XRD) demonstrates epitaxial registry of the grown layer to the substrate. High resolution transmission electron microscopy (TEM) is used to investigate interface behavior, showing regions of abrupt interface transitions and nitrogen polar termination of the Al0.7Ga0.3N. We also grew (111)-oriented ZrN on Ti-Zr-N graded buffer layers as a lattice-matched virtual substrate for AlyGd1-yN. Structure, morphology, and strain are analyzed using XRD and atomic force microscopy. Structure and quality of initial Al0.8Gd0.2N thin films are investigated for both in-situ and ex-situ growths.

AlyX1-yN↗
DOE OSTI2024

Method of making thin films of sodium fluorides and their derivatives by ALD

A method of making thin films of sodium fluorides and their derivatives by atomic layer deposition (“ALD”). A sodium precursor is exposed to a substrate in an ALD reactor. The sodium precursor is purged, leaving the substrate with a sodium intermediate bound thereon. A fluorine precursor is exposed to the bound sodium intermediate in the ALD reactor. The fluorine precursor is purged and a sodium fluoride film is formed on the substrate.

Mane, Anil U.↗
DOE OSTI2023

Linear and Nonlinear Optical Properties of Iridium Nanoparticles Grown via Atomic Layer Deposition

Nonlinear optical phenomena enable novel photonic and optoelectronic applications. Especially, metallic nanoparticles and thin films with nonlinear optical properties offer the potential for micro-optical system integration. For this purpose, new nonlinear materials need to be continuously identified, investigated, and utilized for nonlinear optical applications. While noble-metal nanoparticles, nanostructures, and thin films of silver and gold have been widely studied, iridium (Ir) nanoparticles and ultrathin films have not been investigated for nonlinear optical applications yet. Here, we present a combined theoretical and experimental study on the linear and nonlinear optical properties of iridium nanoparticles deposited via atomic layer deposition (ALD). Linear optical constants, such as the effective refractive index and extinction coefficient, were evaluated at different growth stages of nanoparticle formation. Both linear and nonlinear optical properties of these Ir ALD coatings were calculated theoretically using the Maxwell Garnett theory. The third-order susceptibility of iridium nanoparticle samples was experimentally investigated using the z-scan technique. According to the experiment, for an Ir ALD coating with 45 cycles resulting in iridium nanoparticles, the experimentally determined nonlinear third-order susceptibility is about χ Ir (3) = (2.4 – i2.1) × 10 –17 m 2 /V 2 at the fundamental wavelength of 700 nm. The theory fitted to the experimental results predicts a 5 × 10 6 -fold increase around 230 nm. This strong increase is due to the proximity to the Mie resonance of iridium nanoparticles.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Mudrocks examined by backscattered electron microscopy

A method of studying mudrocks is developed using backscattered electrons (BSE) in scanning electron microscopy. Commercially available detectors are utilized to mix the BSE and secondary electron signals in order to obtain the optimum image for a particular material. Thin sections or polished rock chip surfaces are examined with BSE which provides both the atomic number contrast and topographic contrast. This technique provides very detailed information about the form and composition of individual grains in the mudrock thin sections and can be used in studies of the source, mode of deposition, diagenesis, and tectonic deformational history of mudrocks.

Pye, K.↗
NASA NTRS2004

Reliable and Affordable Control Systems Active Combustor Pattern Factor Control

Active, closed-loop control of combustor pattern factor is a cooperative effort between Honeywell (formerly AlliedSignal) Engines and Systems and the NASA Glenn Research Center to reduce emissions and turbine-stator vane temperature variations, thereby enhancing engine performance and life, and reducing direct operating costs. Total fuel flow supplied to the engine is established by the speed/power control, but the distribution to individual atomizers will be controlled by the Active Combustor Pattern Factor Control (ACPFC). This system consist of three major components: multiple, thin-film sensors located on the turbine-stator vanes; fuel-flow modulators for individual atomizers; and control logic and algorithms within the electronic control.

McCarty, Bob↗
DOE OSTI2021

Understanding and quantifying electron beam effects during in situ TEM nanomechanical tensile testing on metal thin films

Transmission electron microscopy (TEM) imaging relies on high energy electrons for atomic scale resolution, however, the electrons themselves interact with and may alter the material being imaged. Using an in situ TEM MEMS-based nanomechanical testing technique, the effect of the electron beam (e-beam) on the deformation behavior of nanocrystalline Al and ultrafine-grained Au is investigated and quantified. We show that the e-beam enhances plastic deformation, leading to an increase in plastic strain rate and a decrease in true activation volume V* in Al (28 to 21b 3 , with b being the Burgers vector length). The e-beam has a much weaker effect on Au. The e-beam effect is not caused by knock-on damage, but rather an effective temperature increase due to additional atomic fluctuations provided by the e-beam. The effective temperature increase is larger for Al than Au. This e-beam effect does not change the deformation mechanisms, but instead accelerates the stress-driven, thermally activated plastic deformation. These experiments provide insight into the effects of the e-beam on plastic deformation in different metals and underscore the importance of understanding and quantifying these effects for proper interpretation of measured mechanical properties during in situ TEM experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗
NASA NTRS1975

The effect of suprathermal protons on the physical conditions in Seyfert galaxy nuclei

Physical conditions in a high-density hydrogen gas heated and ionized by suprathermal protons are investigated, and the results are applied to the gas in the nuclear region of Seyfert galaxies. The gas is assumed to be optically thick to Lyman and Balmer line radiation. Mechanisms by which the radiation from the gas can balance the heating by the fast protons are investigated, and minimum values for the mass of gas are estimated. Under certain conditions, the suprathermal atoms themselves can cool the ambient gas by rescattering the line radiation into the optically thin region in the wings of the line. This mechanism, optical reverberation, can enhance the broad component of the hydrogen lines produced by inelastic atomic collisions and yield line widths consistent with those observed in Seyfert and quasar spectra. If this mechanism is important, the Lyman decrement can depend strongly on the temperature and density of the ambient hydrogen. The possibility is discussed of achieving dynamic equilibrium of the ambient gas by balancing the momentum transfer from the suprathermals with gravitational attraction of a massive central source.

Ptak, R.↗
DOE OSTI2025

Investigation of kinetic inductance and microwave loss in thin-film TaC x N 1−x superconducting resonators

The promise of tantalum for realizing superconducting quantum devices has generated interest in its compound films, particularly nitrides. Among these, cubic-phase tantalum carbonitride (TaC x N 1−x ) offers reduced susceptibility to oxidation and a high critical temperature, yet its microwave properties remain largely unexplored. Here, in this study, we investigate plasma-enhanced atomic layer deposition of cubic-phase TaC x N 1−x thin films for superconducting microwave circuits. Structural and transport measurements reveal nanocrystalline morphology with sub-10 nm grains and superconductivity in the dirty limit. Coplanar waveguide resonators exhibit moderately high kinetic inductance (16.8 pH/sq for 30 nm films) with potential for enhancement through dimensional scaling. The films also support high internal quality factors exceeding 10 5 at 50 mK in the single-photon regime, comparable to granular aluminum. Loss analysis identifies the two-level systems as the dominant limiting mechanism, with potential for further reduction through interface engineering. These results establish atomic layer deposited TaC x N 1−x as a promising material for scalable, low-loss, high-inductance superconducting circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1980

The ultraviolet dayglow. I - Far UV emissions of N and N2

Far ultraviolet rocket spectra of N I and N2 dayglow emissions have been analyzed by using AE-E photoelectron spectra, laboratory-measured excitation cross sections, and photochemical models of atomic nitrogen. A self-consistent picture of both optically thick and thin emission features is found by using a model in which the principal production mechanism for N I 1200-A and 1493-A photons is photodissociative excitation of N2. The aeronomic data require that 50-70% of the excited 4 P atoms produced dissociatively have velocities within the Doppler core of the ambient nitrogen atoms, contrary to the expectation that those atoms are produced with large excess kinetic energy. The derived atomic nitrogen density has a maximum density of 2.7 x 10 to the 7th per cu cm at 170 km, a value that is within 40% of that from recent models of odd nitrogen photochemistry.

Meier, R. R.↗
DOE OSTI2020

Trapping of lithium atoms in a large hollow optical dipole trap

We describe the trapping of lithium atoms in an optical dipole trap about 1 mm in size, with a nearly rectangular potential. The trap has the shape of a cylinder with flat bases. The confinement region is bounded by thin walls produced by light with a frequency blue-detuned from an atomic transition (resonance) frequency by 19 GHz. Before trapping, the gas is collected and cooled in a magneto-optical trap whose centre nearly coincides with the centre of the dipole trap. After switching off the magneto-optical trap, we have photographed the atoms remaining in the dipole trap. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Chalcogenide perovskite BaZrS 3 thin-film electronic and optoelectronic devices by low temperature processing

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS 3 ) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS 3 thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS 3 thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS 3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm 2 /Vs and 2.6 cm 2 /Vs, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1974

The effect of suprathermal protons on the physical conditions in Seyfert galaxy nuclei

The physical conditions in a high density hydrogen gas heated and ionized by suprathermal protons were investigated, with application to the gas in the nuclear region of Seyfert galaxies. The gas is assumed optically thick to Lyman and Balmer line radiation. Mechanisms by which the radiation from the gas can balance the heating by the fast protons were investigated, and minimum values for the mass of gas were estimated. Under certain conditions, the suprathermal atoms themselves can cool the ambient gas by rescattering the line radiation into the optically thin region in the wings of the line. This mechanism, called optical reverberation, can enhance the broad component of the hydrogen lines produced by inelastic atomic collisions and yield line widths consistent with those observed in Seyfert and quasar spectra. Also discussed is the possibility of achieving dynamic equilibrium of the ambient gas by balancing the momentum transfer from the suprathermals with gravitational attraction of a massive central source.

Ptak, R.↗
DOE OSTI2020

Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

In this work, tunneling aluminum oxide (Al 2 O 3 ) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron-doped surface. Here, these very thin Al 2 O 3 films (1.5-3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110-115 Ω –1 ) hydrophilic surfaces operating as metal-insulator-semiconductor (MIS) contacts. Emitter saturation current density values of approximately ≈57 fA cm 2 are achieved for Al 2 O 3 film thicknesses of 2 nm before metallization. At this same thickness, contact resistivity values of 33 mΩ cm 2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al 2 O 3 used to create these MIS structures were all performed with industrially relevant equipment on Cz wafers.

14 SOLAR ENERGY↗
NASA NTRS2004

Low Earth Orbital Atomic Oxygen Interactions With Materials

Atomic oxygen is formed in the low Earth orbital environment (LEO) by photo dissociation of diatomic oxygen by short wavelength (< 243 nm) solar radiation which has sufficient energy to break the 5.12 eV O2 diatomic bond in an environment where the mean free path is sufficiently long (~ 108 meters) that the probability of reassociation or the formation of ozone (O3) is small. As a consequence, between the altitudes of 180 and 650 km, atomic oxygen is the most abundant species. Spacecraft impact the atomic oxygen resident in LEO with sufficient energy to break hydrocarbon polymer bonds, causing oxidation and thinning of the polymers due to loss of volatile oxidation products. Mitigation techniques, such as the development of materials with improved durability to atomic oxygen attack, as well as atomic oxygen protective coatings, have been employed with varying degrees of success to improve durability of polymers in the LEO environment. Atomic oxygen can also oxidize silicones and silicone contamination to produce non-volatile silica deposits. Such contaminants are present on most LEO missions and can be a threat to performance of optical surfaces. The LEO atomic oxygen environment, its interactions with materials, results of space testing, computational modeling, mitigation techniques, and ground laboratory simulation procedures and issues are presented.

Banks, Bruce A.↗