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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Interface boundary conditions for dynamic magnetization and spin wave dynamics in a ferromagnetic layer with the interface Dzyaloshinskii-Moriya interaction

In this work, we derive the interface exchange boundary conditions for the classical linear dynamics of magnetization in ferromagnetic layers with the interface Dzyaloshinskii-Moriya interaction (IDMI). We show that IDMI leads to pinning of dynamic magnetization at the interface. An unusual peculiarity of the IDMI-based pinning is that its scales as the spin-wave wave number. We incorporate these boundary conditions into an existing numerical model for the dynamics of the Damon-Eshbach spin wave in ferromagnetic films. IDMI affects the dispersion and the frequency non-reciprocity of the travelling Damon-Eshbach spin wave. For a broad range of film thicknesses L and wave numbers, the results of the numerical simulations of the spin wave dispersion are in a good agreement with a simple analytical expression, which shows that the contribution of IDMI to the dispersion scales as 1/L, similarly to the effect of other types of interfacial anisotropy. Suggestions to experimentalists how to detect the presence of IDMI in a spin wave experiment are given.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Simultaneous imaging of the ferromagnetic and ferroelectric structure in multiferroic heterostructures

By measuring the spin polarization of secondary electrons and the intensity of backscattered electrons generated in a scanning electron microscope, we are able to simultaneously image the ferromagnetic domain structure of a ferromagnetic thin film and the ferroelectric domain structure of the underlying ferroelectric substrate upon which it is grown. Simultaneous imaging allows straightforward, quantitative measurements of the correlations in these complex multiferroic systems. We have successfully imaged domains in CoFe/BFO and Fe/BTO, two systems with very different ferromagnet/ferroelectric coupling mechanisms, demonstrating how this technique provides a new local probe of magneto electric/strictive effects in multiferroic heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes

Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H{sup +} (range: ∼850 nm; dose: 1.5 × 10{sup 16 }cm{sup −2}) and Ni{sup +} (range: ∼60 nm; dose: 2 × 10{sup 15 }cm{sup −2}). Following annealing, the H implanted regions populated with Ni nanoparticles of size (∼10–25 nm) and density (∼10{sup 11}/cm{sup 2}) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 °C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a high-quality crystalline Si layer exhibit a very high magnetic switching energy barrier of ∼0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment.

36 MATERIALS SCIENCE↗
DOE OSTI2014

On magnon mediated Cooper pair formation in ferromagnetic superconductors

Identification of pairing mechanism leading to ferromagnetic superconductivity is one of the most challenging issues in condensed matter physics. Although different models have been proposed to explain this phenomenon, a quantitative understanding about this pairing is yet to be achieved. Using the localized-itinerant model, we find that in ferromagnetic superconducting materials both triplet pairing and singlet pairing of electrons are possible through magnon exchange depending upon whether the Debye cut off frequency of magnons is greater or lesser than the Hund's coupling (J) multiplied by average spin (S) per site. Taking into account the repulsive interaction due to the existence of paramagnons, we also find an expression for effective interaction potential between a pair of electrons with opposite spins. We apply the developed formalism in case of UGe{sub 2} and URhGe. The condition of singlet pairing is found to be fulfilled in these cases, as was previously envisaged by Suhl [Suhl, Phys. Rev. Lett. 87, 167007 (2001)]. We compute the critical temperatures of URhGe at ambient pressure and of UGe{sub 2} under different pressures for the first time through BCS equation. Thus, this work outlines a very simple way to evaluate critical temperature in case of a superconducting system. A close match with the available experimental results strongly supports our theoretical treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ferroelectric and ferromagnetic properties in BaTiO{sub 3} thin films on Si (100)

In this paper, we report on the epitaxial integration of room temperature lead-free ferroelectric BaTiO{sub 3} thin (∼1050 nm) films on Si (100) substrates by pulsed laser deposition technique through a domain matching epitaxy paradigm. We employed MgO and TiN as buffer layers to create BaTiO{sub 3}/SrRuO{sub 3}/MgO/TiN/Si (100) heterostructures. C-axis oriented and cube-on-cube epitaxial BaTiO{sub 3} is formed on Si (100) as evidenced by the in-plane and out-of-plane x-ray diffraction, and transmission electron microscopy. X-ray photoemission spectroscopic measurements show that Ti is in 4(+) state. Polarization hysteresis measurements together with Raman spectroscopy and temperature-dependent x-ray diffraction confirm the room temperature ferroelectric nature of BaTiO{sub 3}. Furthermore, laser irradiation of BaTiO{sub 3} thin film is found to induce ferromagnetic-like behavior but affects adversely the ferroelectric characteristics. Laser irradiation induced ferromagnetic properties seem to originate from the creation of oxygen vacancies, whereas the pristine BaTiO{sub 3} shows diamagnetic behavior, as expected. This work has opened up the route for the integration of room temperature lead-free ferroelectric functional oxides on a silicon platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Ferromagnetic interactions and martensitic transformation in Fe doped Ni-Mn-In shape memory alloys

The structure, magnetic, and martensitic properties of Fe doped Ni-Mn-In magnetic shape memory alloys have been studied by differential scanning calorimetry, magnetization, resistivity, X-ray diffraction (XRD), and EXAFS. While Ni{sub 2}MnIn{sub 1−x}Fe{sub x} (0 ≤ x ≤ 0.6) alloys are ferromagnetic and non martensitic, the martensitic transformation temperature in Ni{sub 2}Mn{sub 1.5}In{sub 1−y}Fe{sub y} and Ni{sub 2}Mn{sub 1.6}In{sub 1−y}Fe{sub y} increases for lower Fe concentrations (y ≤ 0.05) before decreasing sharply for higher Fe concentrations. XRD analysis reveals presence of cubic and tetragonal structural phases in Ni{sub 2}MnIn{sub 1−x}Fe{sub x} at room temperature with tetragonal phase content increasing with Fe doping. Even though the local structure around Mn and Ni in these Fe doped alloys is similar to martensitic Mn rich Ni-Mn-In alloys, presence of ferromagnetic interactions and structural disorder induced by Fe affect Mn-Ni-Mn antiferromagnetic interactions resulting in suppression of martensitic transformation in these Fe doped alloys.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Magneto-dielectric coupling and transport properties of the ferromagnetic-BaTiO{sub 3} composites

Ferromagnetic and large magnetoresistance (MR) nanocomposites of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-BaTiO{sub 3} (LSMO-BTO) are synthesized via sol-gel route. The X-ray diffraction confirms the existence of two chemically separated phases in the composites. The maximum MR (35%) was achieved in LSMO-5% BTO (LB5). The coupling between the coexisting phases is observed from the dielectric anomaly at the ferromagnetic transition (T{sub c} = 353 K) for LB5 composition. We observed maximum magnetodielectric effect at T{sub c} of 1.18% in magnitude for LB5 and the effect of magnetic field on other composites was significant. These results are related to the large spin polarization within grains as well as at the grain boundaries and the evidence of variation in dielectric parameters with magnetic field reveal the magnetoelectric coupling in LSMO-BTO nanocomposites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe{sub 0.25}TaS{sub 2}. The vdW interlayer coupling at the Fe-intercalated plane of Fe{sub 0.25}TaS{sub 2} allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Suppression of the ferromagnetic order in the Heusler alloy Ni{sub 50}Mn{sub 35}In{sub 15} by hydrostatic pressure

We report on the effect of hydrostatic pressure on the magnetic and structural properties of the shape-memory Heusler alloy Ni{sub 50}Mn{sub 35}In{sub 15}. Magnetization and x-ray diffraction experiments were performed at hydrostatic pressures up to 5 GPa using diamond anvil cells. Pressure stabilizes the martensitic phase, shifting the martensitic transition to higher temperatures, and suppresses the ferromagnetic austenitic phase. Above 3 GPa, where the martensitic-transition temperature approaches the Curie temperature in the austenite, the magnetization shows no longer indications of ferromagnetic ordering. We further find an extended temperature region with a mixture of martensite and austenite phases, which directly relates to the magnetic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nonlinear multiphysics and multiscale modeling of dynamic ferromagnetic–thermal problems

A coupled ferromagnetic–thermal solver is developed for the multiphysics and multiscale modeling and simulation of nonlinear magnetic materials in the time domain. By adopting a temperature-dependent dynamic hysteresis model, the power loss is characterized and calculated from the solution of Maxwell's equations, which serves as the heat source for the thermal problem. By solving the thermal problem, the temperature change is obtained, and its effect on the magnetic material property can be quantified, which is then coupled back to Maxwell's equations. Due to different temporal characteristics of the electromagnetic fields and the thermal response, the resulting coupled ferromagnetic–thermal system has two significantly different time scales. Such a temporal multiscale issue is addressed with a proposed multiscale time integration method to account for the multiscale coupling between the two physics. With the proposed multiphysics and multiscale modeling method, both the electromagnetic fields and the thermal responses can be captured accurately in a dynamic operation.

Yan, Su (ORCID:0000000273763493)↗
DOE OSTI2018

Thickness and angular dependent ferromagnetic resonance of ultra-low damping Co 25 Fe 75 epitaxial films

Metallic ferromagnets with ultra-low damping are highly desirable for charge-based spintronic applications. In this work, we systematically investigate the magnetic dynamics of Co 25 Fe 75 epitaxial films with a Gilbert damping constant as low as 7.1×10 -4 . The in-plane angular dependence of ferromagnetic resonance (FMR) was measured on various thicknesses Co 25 Fe 75 films grown on MgO and MgAl 2 O 4 , from which the mechanisms for FMR linewidth broadening can be distinguished and quantified. The thickness dependencies of the magnetic anisotropy and inhomogeneous broadening of the linewidth are good indicators of crystal quality and magnet uniformity. Additionally, it is shown that anisotropic two-magnon scattering is induced by defects at the surfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Consequences of aging on ferromagnetic amorphous Fe 75 Si 10 B 15 microwires for advanced inductive applications

Amorphous ferromagnetic microwires fabricated by water-quenching have been assessed to show favorable properties for next-generation high-frequency electric machines as compared to those of conventional amorphous magnetic alloys in sheet or ribbon form. Here, water-quenched amorphous Fe 75 Si 10 B 15 microwires were subjected to a range of aging times of up to 5 years in the air at room temperature. While both newer and aged microwires are X-ray amorphous, the aged microwires do exhibit a slight degree of crystallinity, a lower initial susceptibility and a reduced enthalpy change for full devitrification. These small differences (typically < 5%) are attributed to the formation of minor surface oxidation products such as iron oxides and SiO 2 which modify the surface strain state. The resultant stress couples to magnetostriction to promote the formation of radial magnetic domains that impair the magnetic reversal process. These results demonstrate that while amorphous ferromagnetic microwires are essentially stable against aging in the air, consideration of their surface state will be significant for advanced applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Absence of a Dirac gap in ferromagnetic Cr x (Bi 0.1 Sb 0.9 ) 2-x Te 3

Magnetism breaks the time-reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to the quantum anomalous Hall effect. The most common approach of inducing a ferromagnetic state is by doping magnetic 3d elements into the bulk of 3D topological insulators. In Cr 0.15 (Bi 0.1 Sb 0.9 ) 1.85 Te 3 , the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, T C , the scanning tunneling microscopy studies have reported a large Dirac gap of ~20–100 meV. The discrepancy between the low temperature of quantum anomalous Hall effect (< C ) and large spectroscopic Dirac gaps (>>T C ) found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of the pristine and potassium doped surface of Cr 0.15 (Bi 0.1 Sb 0.9 ) 1.85 Te 3 . Upon potassium deposition, the p-type surface state of the pristine sample was turned into an n-type, allowing the spectroscopic observation of Dirac point. Finally, we find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Layer-dependence study of two-dimensional ferromagnets: Fe3GeTe2 and Fe5Ge2Te2

We have investigated the electrical transport properties of nanodevices fabricated from exfoliated flakes of two-dimensional metallic ferromagnets Fe3GeTe2 (FGT) and Fe5Ge2Te2 (FG2T) down to below three layers in thickness. The per-layer anomalous Hall conductivity even in thick FGT and FG2T devices is found to be much smaller than ∼e2h, the approximate value calculated for thick undoped crystals. Moreover, we obtain a power-law scaling relation between the per-layer anomalous Hall and per-layer longitudinal conductivities with an exponent close to 1.6, which agrees with the universal value for poor ferromagnetic conductors. Both FGT and FG2T devices show clear layer-dependent Curie temperatures and layer-dependent perpendicular magnetic anisotropy, with FG2T dominating the former and FGT dominating the latter for all thicknesses. Despite their declining trend as the device thickness decreases, both Curie temperature and magnetic anisotropy retain a significant fraction of their bulk values (>60% and >80% of the bulk values, respectively, even in the thinnest FG2T device), indicating attractive potential for practical applications.

Physics↗
DOE OSTI2025

Enabling room-temperature ferromagnetism in few-layered MoS 2 films via strain engineering

Strain engineering presents a promising pathway for modulating the physical properties of two-dimensional (2D) transition metal dichalcogenides materials. Here, in this study, we investigate the strain-induced magnetic behavior of diamagnetic MoS 2 films prepared by the DC magnetron sputtering technique. By applying +1% tensile strain to few-layered MoS 2 films (∼3.5 nm), we observe the emergence of room-temperature ferromagnetism with a magnetization saturation of about ∼130 emu/cm 3 , in stark contrast to bulk films (∼40 nm), which remain diamagnetic under similar conditions. Raman spectroscopy reveals a pronounced reduction in the intensity and the splitting of the E′ mode in 1% strained few-layered films, indicating a possible bond elongation and symmetry breaking under tensile stress. Additionally, x-ray absorption spectroscopy at the Mo M 3 edge further confirms a strain-induced electronic structure modification in few-layered films, with no corresponding shift observed in bulk counterparts. Moreover, the strain-induced magnetic and structural changes are largely reversible upon strain release. We attribute the origin of ferromagnetism in few-layered films to the combined influence of tensile strain and defect-assisted bond weakening, which facilitates crystal field transitions within the Mo 4d orbitals. These findings demonstrate that strain engineering can effectively induce and modulate magnetism in 2D materials, providing opportunities for developing strain-controlled spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spin wavepackets in the Kagome ferromagnet Fe 3 Sn 2 : Propagation and precursors

The propagation of spin waves in magnetically ordered systems has emerged as a potential means to shuttle quantum information over large distances. Conventionally, the arrival time of a spin wavepacket at a distance, d , is assumed to be determined by its group velocity, v g . Here, we report time-resolved optical measurements of wavepacket propagation in the Kagome ferromagnet Fe 3 Sn 2 that demonstrate the arrival of spin information at times significantly less than d / v g . We show that this spin wave “precursor” originates from the interaction of light with the unusual spectrum of magnetostatic modes in Fe 3 Sn 2 . Related effects may have far-reaching consequences toward realizing long-range, ultrafast spin wave transport in both ferromagnetic and antiferromagnetic systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Covalent 2D Cr 2 Te 3 ferromagnet

To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr 2 Te 3 with a thickness down to one-unit-cell. The 2D Cr 2 Te 3 crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7 × 10 5 J m -3 , and a high coercivity of ~4.6 kG at 20 K. First principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr 2 Te 3 , suggesting its potential application for injecting carriers with high spin polarization into spintronic devices.

2D magnets↗